Elena Atanasova, Andreas Greul, Ioan Mihail Ghitiu, Nicu Scarisoreanu, Achim Walter Hassel, Andrei Ionut Mardare
A Ti-Eu thin film combinatorial library with a composition ranging from 3 to 17 at.% Eu is fabricated by co-sputtering and followed by anodic oxidation. Systematic screening of the electrical behaviour of the resulting anodic memristors revealed forming-free, analogue switching behaviour, with higher Eu content alloys (7–17 at.% Eu) demonstrating enhanced endurance and multi-level switching. The best performing alloy composition in terms of memristive behaviour is identified as Ti-15 at.% Eu, with a high-to-low resistance ratio of 105 and three levels of intermediate switching. Transmission electron microscopy analysis revealed the resistive switching as being interfacial, based on ion migration intermediated by intrinsically defined nanoscale crystallites. This is further confirmed by current conduction analysis, demonstrating that the conduction is governed by field-assisted filling and depletion of trap states. The defect engineered, volatile and self-rectifying anodic memristors show promise in neuromorphic computing for mimicking synaptic functions.
{"title":"Combinatorial Screening for Europium Induced Defect Engineering in Titania Anodic Memristors","authors":"Elena Atanasova, Andreas Greul, Ioan Mihail Ghitiu, Nicu Scarisoreanu, Achim Walter Hassel, Andrei Ionut Mardare","doi":"10.1002/admi.202500883","DOIUrl":"https://doi.org/10.1002/admi.202500883","url":null,"abstract":"<p>A Ti-Eu thin film combinatorial library with a composition ranging from 3 to 17 at.% Eu is fabricated by co-sputtering and followed by anodic oxidation. Systematic screening of the electrical behaviour of the resulting anodic memristors revealed forming-free, analogue switching behaviour, with higher Eu content alloys (7–17 at.% Eu) demonstrating enhanced endurance and multi-level switching. The best performing alloy composition in terms of memristive behaviour is identified as Ti-15 at.% Eu, with a high-to-low resistance ratio of 10<sup>5</sup> and three levels of intermediate switching. Transmission electron microscopy analysis revealed the resistive switching as being interfacial, based on ion migration intermediated by intrinsically defined nanoscale crystallites. This is further confirmed by current conduction analysis, demonstrating that the conduction is governed by field-assisted filling and depletion of trap states. The defect engineered, volatile and self-rectifying anodic memristors show promise in neuromorphic computing for mimicking synaptic functions.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"13 3","pages":""},"PeriodicalIF":4.4,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500883","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146139373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Interfacial strength at the metal-adhesive joint is a pivotal parameter to define adhesive bond reliability and its overall mechanical performance. This study systematically investigates and optimizes sulfuric acid anodizing (SAA) parameters to promote the interfacial strength between aluminum Al2024 (Al) alloy and polyurethane (PU). Response surface methodology (RSM) was employed for the design of experiments by altering acid concentration, anodizing current, and time. Surface roughness and contact angle were measured to assess the effect of these parameters, while scanning electron and atomic force microscopies were employed to elucidate structure-property relationships. SAA exceptionally enhanced the interfacial strength by increasing the contact area by creating a micro- and nano-porous oxide layer, resulting in a 920% and 15 100% improvement in the single lap shear strength (SLSS) and fracture energy, respectively, after 45 min anodizing. By maximizing SLSS and minimizing cost through time, electric current, and concentration, RSM defined the optimum SAA conditions at 0.4144 M concentration, 1.0907A current, and 5.505 min; experimental measurements validated the optimized outcomes, showing respective increases of 600% and 6700% in SLSS and fracture energy. Also, the failure mode shifted from adhesive to predominantly cohesive mode. Additionally, different machine learning (ML) algorithms were trained using various combinations of anodizing and surface topography features; the most influential parameters were identified while mitigating overfitting despite the limited dataset. Among all tested ML models, support vector regression showed the highest accuracy, achieving a remarkable mean absolute percentage error of ≈11%. The study highlights the effectiveness of SAA to enhance Al/PU interface strength.
{"title":"Ultra-Improved Interfacial Strength Between Metallic Surface and Polyurethane via Cost-Effective Anodizing Process","authors":"Umut Bakhbergen, Sherif Araby, Zhandos Tauanov, Nursultan Turdakyn, Reza Montazami, Fethi Abbassi, Gulnur Kalimuldina","doi":"10.1002/admi.202500916","DOIUrl":"https://doi.org/10.1002/admi.202500916","url":null,"abstract":"<p>Interfacial strength at the metal-adhesive joint is a pivotal parameter to define adhesive bond reliability and its overall mechanical performance. This study systematically investigates and optimizes sulfuric acid anodizing (SAA) parameters to promote the interfacial strength between aluminum Al2024 (Al) alloy and polyurethane (PU). Response surface methodology (RSM) was employed for the design of experiments by altering acid concentration, anodizing current, and time. Surface roughness and contact angle were measured to assess the effect of these parameters, while scanning electron and atomic force microscopies were employed to elucidate structure-property relationships. SAA exceptionally enhanced the interfacial strength by increasing the contact area by creating a micro- and nano-porous oxide layer, resulting in a 920% and 15 100% improvement in the single lap shear strength (SLSS) and fracture energy, respectively, after 45 min anodizing. By maximizing SLSS and minimizing cost through time, electric current, and concentration, RSM defined the optimum SAA conditions at 0.4144 M concentration, 1.0907A current, and 5.505 min; experimental measurements validated the optimized outcomes, showing respective increases of 600% and 6700% in SLSS and fracture energy. Also, the failure mode shifted from adhesive to predominantly cohesive mode. Additionally, different machine learning (ML) algorithms were trained using various combinations of anodizing and surface topography features; the most influential parameters were identified while mitigating overfitting despite the limited dataset. Among all tested ML models, support vector regression showed the highest accuracy, achieving a remarkable mean absolute percentage error of ≈11%. The study highlights the effectiveness of SAA to enhance Al/PU interface strength.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"13 4","pages":""},"PeriodicalIF":4.4,"publicationDate":"2026-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500916","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146224076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aungkan Sen, Liam J. Scanlon, Axel Melchor Gaona Carranza, Jose L. Mendoza-Cortes, Johannes Pollanen, Richard R. Lunt, William J. Gannon
Halide Perovskites
The illustration depicts charge carriers preserving their quantum phase coherence as they traverse grain boundaries in halide perovskite thin films, revealing a striking grain-size-independent behavior. Subsequent investigations uncover that phase coherence is not limited by microstructural features but dictated largely by crystal structure (or strain). More details can be found in the Research Article by Jose L. Mendoza-Cortes, Johannes Pollanen, Richard R. Lunt, William J. Gannon, and co-workers (DOI: 10.1002/admi.202500567).