Junyoung Park, Nayeon Kim, Jung-Eun Choi, Yujin Yeo, Min-Seok Kim, Beom-Jun Seo, Chin-Wook Chung
The fabrication of next-generation semiconductor and quantum devices with complex 3D architectures requires etching processes that enable highly anisotropic profiles while minimizing plasma-induced damage. However, conventional plasma processes face fundamental limitations, including plasma-induced damage and limited control over etch anisotropy. In particular, fluorine-rich plasmas such as CF4 inherently struggle to achieve vertical profiles due to insufficient sidewall passivation. This study demonstrates that vertical etch profiles can be achieved under ultra-low electron temperature (ULET) conditions in fluorine-rich Ar/CF4 plasma. Under conventional high electron temperature (Te) conditions without radio-frequency (rf) bias power, Ar/CF4 plasma produces isotropic profiles characterized by undercut and a rounded trench bottom. When Te is reduced to ≈ 0.5 eV, the profile transitions from isotropic to anisotropic, resulting in suppressed undercut and a flattened trench bottom. This transition is attributed to enhanced sidewall passivation, driven by an increased CFx/F ratio at low-Te conditions. Moreover, applying moderate rf bias (7 W) to the ULET plasma improves the vertical etch rate and anisotropy without distortion. However, excessive bias power (>18 W) leads to electron heating, which reintroduces distortion. These findings establish Te as a decisive parameter and demonstrate that ULET plasma enables highly anisotropic etching with minimized distortion in fluorine-rich chemistries.
{"title":"Realizing Vertical Etch Profiles in Fluorine-Rich Ar/CF4 Plasma","authors":"Junyoung Park, Nayeon Kim, Jung-Eun Choi, Yujin Yeo, Min-Seok Kim, Beom-Jun Seo, Chin-Wook Chung","doi":"10.1002/admi.202500940","DOIUrl":"https://doi.org/10.1002/admi.202500940","url":null,"abstract":"<p>The fabrication of next-generation semiconductor and quantum devices with complex 3D architectures requires etching processes that enable highly anisotropic profiles while minimizing plasma-induced damage. However, conventional plasma processes face fundamental limitations, including plasma-induced damage and limited control over etch anisotropy. In particular, fluorine-rich plasmas such as CF<sub>4</sub> inherently struggle to achieve vertical profiles due to insufficient sidewall passivation. This study demonstrates that vertical etch profiles can be achieved under ultra-low electron temperature (ULET) conditions in fluorine-rich Ar/CF<sub>4</sub> plasma. Under conventional high electron temperature (<i>T</i><sub>e</sub>) conditions without radio-frequency (rf) bias power, Ar/CF<sub>4</sub> plasma produces isotropic profiles characterized by undercut and a rounded trench bottom. When <i>T</i><sub>e</sub> is reduced to ≈ 0.5 eV, the profile transitions from isotropic to anisotropic, resulting in suppressed undercut and a flattened trench bottom. This transition is attributed to enhanced sidewall passivation, driven by an increased CF<sub>x</sub>/F ratio at low-<i>T</i><sub>e</sub> conditions. Moreover, applying moderate rf bias (7 W) to the ULET plasma improves the vertical etch rate and anisotropy without distortion. However, excessive bias power (>18 W) leads to electron heating, which reintroduces distortion. These findings establish<i> T</i><sub>e</sub> as a decisive parameter and demonstrate that ULET plasma enables highly anisotropic etching with minimized distortion in fluorine-rich chemistries.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"13 1","pages":""},"PeriodicalIF":4.4,"publicationDate":"2025-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202500940","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145930834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon-doped TiO2 nanoparticles were prepared by a facile carbothermal treatment at different temperatures. The synthesis was conducted in a rotary tube furnace under an acetylene/nitrogen gas flow. A detailed analysis of the morphology of the particles revealed a layered graphene structure surrounding the TiO2 core with a temperature-dependent shell thickness of 1–1.5 nm. The material exhibits a significant shift in the Raman Eg(1) mode toward higher wavenumbers. High carbon contents were determined by X-ray photoelectron spectroscopy. This led to the conclusion that in addition to the carbon in the shell, carbon is also incorporated into the TiO2 structure. Substitutional doping in favor of titanium or oxygen atoms could be excluded based on XPS measurements due to the absence of Ti–C bonds and the lack of changes in lattice parameters of the unit cell or microstrain. An interstitial incorporation of carbon is therefore most likely. Either the incorporation of carbon or the carbon shell suppressed the phase transition from anatase to the thermodynamically stable rutile which is expected above 600