Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5414176
R. Kubasek, Z. Roubal, Z. Szabó, M. Steinbauer
Air ion concentration and composition belong to the frequently monitored parameters of the atmosphere. Their influence on living organisms has been the subject of intensive studies. This paper deals with measuring of air ions concentration and their mobility spectrum. The most used measuring method is ¿aspiration method¿. The feature of the aspiration condenser with segmented inner electrode and the classic integrative aspiration condenser for determination of air ions spectrum mobility will be compared.
{"title":"The measurement of air ions spectrum using the aspiration method","authors":"R. Kubasek, Z. Roubal, Z. Szabó, M. Steinbauer","doi":"10.1109/ICSCS.2009.5414176","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5414176","url":null,"abstract":"Air ion concentration and composition belong to the frequently monitored parameters of the atmosphere. Their influence on living organisms has been the subject of intensive studies. This paper deals with measuring of air ions concentration and their mobility spectrum. The most used measuring method is ¿aspiration method¿. The feature of the aspiration condenser with segmented inner electrode and the classic integrative aspiration condenser for determination of air ions spectrum mobility will be compared.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122433951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412202
H. Chaoui, W. Gueaieb, M. Yagoub
In this paper, an artificial neural network (ANN) based control scheme is introduced for the inverted pendulum motion and posture control problem. The adaptive control strategy consists of a Lyapunov stability-based online weights adaptation that provides asymptotic tracking while learning the nonlinear inverted pendulum system's dynamics. Unlike other control strategies, no a priori offline training, weights initialization, or parameters knowledge is required. Experiments for different situations highlight the performance of the proposed controller in compensating for friction nonlinearities, in the form of Coulomb friction. Furthermore, the neural networks inherent parallelism makes them a good candidate for implementation in real-time electromechanical systems.
{"title":"ANN-based adaptive motion and posture control of an inverted pendulum with unknown dynamics","authors":"H. Chaoui, W. Gueaieb, M. Yagoub","doi":"10.1109/ICSCS.2009.5412202","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412202","url":null,"abstract":"In this paper, an artificial neural network (ANN) based control scheme is introduced for the inverted pendulum motion and posture control problem. The adaptive control strategy consists of a Lyapunov stability-based online weights adaptation that provides asymptotic tracking while learning the nonlinear inverted pendulum system's dynamics. Unlike other control strategies, no a priori offline training, weights initialization, or parameters knowledge is required. Experiments for different situations highlight the performance of the proposed controller in compensating for friction nonlinearities, in the form of Coulomb friction. Furthermore, the neural networks inherent parallelism makes them a good candidate for implementation in real-time electromechanical systems.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133246962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5414191
K. Volkan Dalmisli, Berna Ors
Advanced Encryption Standard (AES) maintains safety and is used for providing security since publishing date. At the present day, crypto devices are produced in order to be smaller and faster. So, AES chips should not only use very small area, but also have enough throughput. In this paper, we present an 8-bit implementation of the AES algorithm which encrypts plaintext with 14.3 Mbps throughput and lays on 4300 GE on ASIC and 299 slices on FPGA devices. We use only one s-box and a quarter mix column modules as significant points.
{"title":"Design of new tiny circuits for AES encryption algorithm","authors":"K. Volkan Dalmisli, Berna Ors","doi":"10.1109/ICSCS.2009.5414191","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5414191","url":null,"abstract":"Advanced Encryption Standard (AES) maintains safety and is used for providing security since publishing date. At the present day, crypto devices are produced in order to be smaller and faster. So, AES chips should not only use very small area, but also have enough throughput. In this paper, we present an 8-bit implementation of the AES algorithm which encrypts plaintext with 14.3 Mbps throughput and lays on 4300 GE on ASIC and 299 slices on FPGA devices. We use only one s-box and a quarter mix column modules as significant points.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114182750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412683
H. Boujemaa
In cooperative automatic repeat request (ARQ), the retransmission can be done by the source or by a selected relay. We consider opportunisitic amplify and forward (AF) relaying. The selected relay offers the highest instantaneous signal to noise ratio (SNR) of the relaying link (source-relay-destination). We investigate the optimal combination of source and relays transmission for a destination using a selective combining (SC) or a maximum ratio combining (MRC) of all received signals. This optimization is based on the bit error probability (BEP) at the destination after K transmissions.
{"title":"Optimal transmission policy of truncated cooperative ARQ protocols using opportunistic amplify and forward relaying","authors":"H. Boujemaa","doi":"10.1109/ICSCS.2009.5412683","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412683","url":null,"abstract":"In cooperative automatic repeat request (ARQ), the retransmission can be done by the source or by a selected relay. We consider opportunisitic amplify and forward (AF) relaying. The selected relay offers the highest instantaneous signal to noise ratio (SNR) of the relaying link (source-relay-destination). We investigate the optimal combination of source and relays transmission for a destination using a selective combining (SC) or a maximum ratio combining (MRC) of all received signals. This optimization is based on the bit error probability (BEP) at the destination after K transmissions.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114744414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412230
M. Schmidt, C. Lu, H. Gottlob, H. Kurz
A FUSI NiSi metal gate technology is used to investigate the scaling potential of high-k epitaxial gadolinium oxide (Gd2O3) down to 0.6 nm equivalent oxide thickness. Thermally stable gate stacks have been realized by TiN electrodes on gadolinium silicate. Work function tuning of mid gap electrodes is achieved by insertion of ultrathin AlN buffer layers. Initial results based on sputtered buffer layers are transferred to atomic layer deposition technique in order to achieve atomic control of the thicknesses in combination with conformal deposition.
{"title":"Metal gate electrodes for rare earth oxide high-k dielectrics","authors":"M. Schmidt, C. Lu, H. Gottlob, H. Kurz","doi":"10.1109/ICSCS.2009.5412230","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412230","url":null,"abstract":"A FUSI NiSi metal gate technology is used to investigate the scaling potential of high-k epitaxial gadolinium oxide (Gd2O3) down to 0.6 nm equivalent oxide thickness. Thermally stable gate stacks have been realized by TiN electrodes on gadolinium silicate. Work function tuning of mid gap electrodes is achieved by insertion of ultrathin AlN buffer layers. Initial results based on sputtered buffer layers are transferred to atomic layer deposition technique in order to achieve atomic control of the thicknesses in combination with conformal deposition.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123422979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5414197
L. Rispal, U. Schwalke
In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.
{"title":"Carbon: The future of nanoelectronics","authors":"L. Rispal, U. Schwalke","doi":"10.1109/ICSCS.2009.5414197","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5414197","url":null,"abstract":"In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124941006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5414217
Frank Wessely, R. Endres, U. Schwalke
Damascene-Metal-Gate technology gives rise to the implementation of crystalline gate dielectrics into modern MOS devices. Evaluation of the scalability of this fabrication process is important for a subsequent use in industrial-scale fabrication. Devices were processed on ultrathin Unibond SOI-Wafers. A high-K specially designed layout was patterned onto the substrates via mix and match electron-beam / UV lithography. A gate length of ∼100nm was chosen for a first approach. Reactive ion etching was performed for dummy gate and active area formation. Subsequently the surface was planarized via chemical mechanical planarization (CMP). In the following the dummy gate was removed, and in one case replaced with molecular beam epitaxially grown crystalline gadolinium oxide (Gd2O3) and on the other case with thermally grown SiO2 as reference material. Palladium was used as source/drain- and gate-metallisation. Atomic force microscopy and scanning electron microscopy were carried out for process monitoring. Especially the dummy gate formation, subsequent CMP and cleaning processes, as well as the dummy gate removal and the conformity of the replacement gate stack are of particular interest.
{"title":"Scaling the Damascene-Metal-Gate integration process via electron beam lithography","authors":"Frank Wessely, R. Endres, U. Schwalke","doi":"10.1109/ICSCS.2009.5414217","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5414217","url":null,"abstract":"Damascene-Metal-Gate technology gives rise to the implementation of crystalline gate dielectrics into modern MOS devices. Evaluation of the scalability of this fabrication process is important for a subsequent use in industrial-scale fabrication. Devices were processed on ultrathin Unibond SOI-Wafers. A high-K specially designed layout was patterned onto the substrates via mix and match electron-beam / UV lithography. A gate length of ∼100nm was chosen for a first approach. Reactive ion etching was performed for dummy gate and active area formation. Subsequently the surface was planarized via chemical mechanical planarization (CMP). In the following the dummy gate was removed, and in one case replaced with molecular beam epitaxially grown crystalline gadolinium oxide (Gd2O3) and on the other case with thermally grown SiO2 as reference material. Palladium was used as source/drain- and gate-metallisation. Atomic force microscopy and scanning electron microscopy were carried out for process monitoring. Especially the dummy gate formation, subsequent CMP and cleaning processes, as well as the dummy gate removal and the conformity of the replacement gate stack are of particular interest.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122666518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412693
M. Mansouri, H. Snoussi, C. Richard
We consider the problem of target tracking in wireless sensor networks where the nonlinear observed system is assumed to progress respecting to a probabilistic state space model. This proposition improves the use of the variational filtering (VF) by jointly estimating the target position and optimizing the power scheduling, where the sensor observations are corrupted by additive noises and attenuated by path-loss coefficient. In fact, the quantized variational filtering (QVF) has been shown to be adapted to the communication constraints of sensor networks. Its efficiency relies on the fact that the online update of the filtering distribution and its compression are executed simultaneously. We first optimize quantization for reconstructing a single sensors measurement, and developing the optimal number of quantization levels as well as the minimal power transmitted by sensors under distortion constraint. Then we estimate the path-loss coefficient by maximizing the a posteriori distribution and the target position by using the QVF. The simulation results prove that the adaptive power optimization algorithm, outperforms both the QVF algorithm using uniform power level and the VF algorithm based on binary sensors.
{"title":"A nonlinear estimation for target tracking in wireless sensor networks using quantized variational filtering","authors":"M. Mansouri, H. Snoussi, C. Richard","doi":"10.1109/ICSCS.2009.5412693","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412693","url":null,"abstract":"We consider the problem of target tracking in wireless sensor networks where the nonlinear observed system is assumed to progress respecting to a probabilistic state space model. This proposition improves the use of the variational filtering (VF) by jointly estimating the target position and optimizing the power scheduling, where the sensor observations are corrupted by additive noises and attenuated by path-loss coefficient. In fact, the quantized variational filtering (QVF) has been shown to be adapted to the communication constraints of sensor networks. Its efficiency relies on the fact that the online update of the filtering distribution and its compression are executed simultaneously. We first optimize quantization for reconstructing a single sensors measurement, and developing the optimal number of quantization levels as well as the minimal power transmitted by sensors under distortion constraint. Then we estimate the path-loss coefficient by maximizing the a posteriori distribution and the target position by using the QVF. The simulation results prove that the adaptive power optimization algorithm, outperforms both the QVF algorithm using uniform power level and the VF algorithm based on binary sensors.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130394405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412459
N. Abdelmalek, F. Djeffal, M. Abdi, D. Arar
in this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.
{"title":"An accurate threshold voltage model for nanoscale GCGS VSG MOSFET","authors":"N. Abdelmalek, F. Djeffal, M. Abdi, D. Arar","doi":"10.1109/ICSCS.2009.5412459","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412459","url":null,"abstract":"in this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124092901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412583
S. Ouamour, H. Sayoud, M. Guerti
In this paper, we deal with the problem of speaker segmentation. This speciality consists in splitting the audio document into homogeneous areas. Each area is attributed to one speaker [1]. Speaker segmentation (or speaker change detection) consists in detecting the points where the speaker identity changes, in a multi-speaker audio stream. These points or times are called “Break Points” [2].
{"title":"Speaker segmentation using parallel fusion between three classifiers","authors":"S. Ouamour, H. Sayoud, M. Guerti","doi":"10.1109/ICSCS.2009.5412583","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412583","url":null,"abstract":"In this paper, we deal with the problem of speaker segmentation. This speciality consists in splitting the audio document into homogeneous areas. Each area is attributed to one speaker [1]. Speaker segmentation (or speaker change detection) consists in detecting the points where the speaker identity changes, in a multi-speaker audio stream. These points or times are called “Break Points” [2].","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116652418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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