Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5414176
R. Kubasek, Z. Roubal, Z. Szabó, M. Steinbauer
Air ion concentration and composition belong to the frequently monitored parameters of the atmosphere. Their influence on living organisms has been the subject of intensive studies. This paper deals with measuring of air ions concentration and their mobility spectrum. The most used measuring method is ¿aspiration method¿. The feature of the aspiration condenser with segmented inner electrode and the classic integrative aspiration condenser for determination of air ions spectrum mobility will be compared.
{"title":"The measurement of air ions spectrum using the aspiration method","authors":"R. Kubasek, Z. Roubal, Z. Szabó, M. Steinbauer","doi":"10.1109/ICSCS.2009.5414176","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5414176","url":null,"abstract":"Air ion concentration and composition belong to the frequently monitored parameters of the atmosphere. Their influence on living organisms has been the subject of intensive studies. This paper deals with measuring of air ions concentration and their mobility spectrum. The most used measuring method is ¿aspiration method¿. The feature of the aspiration condenser with segmented inner electrode and the classic integrative aspiration condenser for determination of air ions spectrum mobility will be compared.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122433951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412202
H. Chaoui, W. Gueaieb, M. Yagoub
In this paper, an artificial neural network (ANN) based control scheme is introduced for the inverted pendulum motion and posture control problem. The adaptive control strategy consists of a Lyapunov stability-based online weights adaptation that provides asymptotic tracking while learning the nonlinear inverted pendulum system's dynamics. Unlike other control strategies, no a priori offline training, weights initialization, or parameters knowledge is required. Experiments for different situations highlight the performance of the proposed controller in compensating for friction nonlinearities, in the form of Coulomb friction. Furthermore, the neural networks inherent parallelism makes them a good candidate for implementation in real-time electromechanical systems.
{"title":"ANN-based adaptive motion and posture control of an inverted pendulum with unknown dynamics","authors":"H. Chaoui, W. Gueaieb, M. Yagoub","doi":"10.1109/ICSCS.2009.5412202","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412202","url":null,"abstract":"In this paper, an artificial neural network (ANN) based control scheme is introduced for the inverted pendulum motion and posture control problem. The adaptive control strategy consists of a Lyapunov stability-based online weights adaptation that provides asymptotic tracking while learning the nonlinear inverted pendulum system's dynamics. Unlike other control strategies, no a priori offline training, weights initialization, or parameters knowledge is required. Experiments for different situations highlight the performance of the proposed controller in compensating for friction nonlinearities, in the form of Coulomb friction. Furthermore, the neural networks inherent parallelism makes them a good candidate for implementation in real-time electromechanical systems.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133246962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412251
S. Gaoua, S. Asadi, M. Yagoub
Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.
{"title":"Frequency- and time-domain modeling tools for efficient RF/microwave transistor characterization","authors":"S. Gaoua, S. Asadi, M. Yagoub","doi":"10.1109/ICSCS.2009.5412251","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412251","url":null,"abstract":"Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"2011 33","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134481716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412593
Heyfa Ammar, A. Benazza-Benyahia
In this paper, we are interested in detecting blotches in old movies using spatial and temporal information of the sequence. The contribution of our approach is three-fold. Firstly, unlike conventional methods, we proceed to the detection in the wavelet transform domain instead of the spatial domain. Secondly, the detection of the possible corrupted coefficients in each subband and at each resolution level involves a specific multiple outlier statistical test. Finally, a coarse-to-fine strategy is carried out to capture the interscale persistency of the coefficients in order to estimate the positions of the corrupted pixels in the full resolution image.
{"title":"A novel spatio-temporal method for blotch detection in the wavelet transform domain","authors":"Heyfa Ammar, A. Benazza-Benyahia","doi":"10.1109/ICSCS.2009.5412593","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412593","url":null,"abstract":"In this paper, we are interested in detecting blotches in old movies using spatial and temporal information of the sequence. The contribution of our approach is three-fold. Firstly, unlike conventional methods, we proceed to the detection in the wavelet transform domain instead of the spatial domain. Secondly, the detection of the possible corrupted coefficients in each subband and at each resolution level involves a specific multiple outlier statistical test. Finally, a coarse-to-fine strategy is carried out to capture the interscale persistency of the coefficients in order to estimate the positions of the corrupted pixels in the full resolution image.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132167125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412610
M. Corinthios
A generalisation of the Dirac-delta function and its family of derivatives recently proposed as a means of introducing impulses on the complex plane in Laplace and z transform domains is shown to extend the applications of Bilateral Laplace and z transforms. Transforms of two-sided signals and sequences are made possible by a extending the domain of distributions to cover generalized functions of complex variables. The domains of Bilateral Laplace and z transforms are shown to extend to two-sided exponentials and fast-rising functions, which, without such generalized impulses have no transform. Applications include generalized forms of the sampling theorem, a new type of spatial convolution on the s and z planes and solutions of differential and difference equations with two-sided infinite duration forcing functions and sequences.
{"title":"Extended Bilateral transforms and their applications","authors":"M. Corinthios","doi":"10.1109/ICSCS.2009.5412610","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412610","url":null,"abstract":"A generalisation of the Dirac-delta function and its family of derivatives recently proposed as a means of introducing impulses on the complex plane in Laplace and z transform domains is shown to extend the applications of Bilateral Laplace and z transforms. Transforms of two-sided signals and sequences are made possible by a extending the domain of distributions to cover generalized functions of complex variables. The domains of Bilateral Laplace and z transforms are shown to extend to two-sided exponentials and fast-rising functions, which, without such generalized impulses have no transform. Applications include generalized forms of the sampling theorem, a new type of spatial convolution on the s and z planes and solutions of differential and difference equations with two-sided infinite duration forcing functions and sequences.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132954807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412683
H. Boujemaa
In cooperative automatic repeat request (ARQ), the retransmission can be done by the source or by a selected relay. We consider opportunisitic amplify and forward (AF) relaying. The selected relay offers the highest instantaneous signal to noise ratio (SNR) of the relaying link (source-relay-destination). We investigate the optimal combination of source and relays transmission for a destination using a selective combining (SC) or a maximum ratio combining (MRC) of all received signals. This optimization is based on the bit error probability (BEP) at the destination after K transmissions.
{"title":"Optimal transmission policy of truncated cooperative ARQ protocols using opportunistic amplify and forward relaying","authors":"H. Boujemaa","doi":"10.1109/ICSCS.2009.5412683","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412683","url":null,"abstract":"In cooperative automatic repeat request (ARQ), the retransmission can be done by the source or by a selected relay. We consider opportunisitic amplify and forward (AF) relaying. The selected relay offers the highest instantaneous signal to noise ratio (SNR) of the relaying link (source-relay-destination). We investigate the optimal combination of source and relays transmission for a destination using a selective combining (SC) or a maximum ratio combining (MRC) of all received signals. This optimization is based on the bit error probability (BEP) at the destination after K transmissions.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114744414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412583
S. Ouamour, H. Sayoud, M. Guerti
In this paper, we deal with the problem of speaker segmentation. This speciality consists in splitting the audio document into homogeneous areas. Each area is attributed to one speaker [1]. Speaker segmentation (or speaker change detection) consists in detecting the points where the speaker identity changes, in a multi-speaker audio stream. These points or times are called “Break Points” [2].
{"title":"Speaker segmentation using parallel fusion between three classifiers","authors":"S. Ouamour, H. Sayoud, M. Guerti","doi":"10.1109/ICSCS.2009.5412583","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412583","url":null,"abstract":"In this paper, we deal with the problem of speaker segmentation. This speciality consists in splitting the audio document into homogeneous areas. Each area is attributed to one speaker [1]. Speaker segmentation (or speaker change detection) consists in detecting the points where the speaker identity changes, in a multi-speaker audio stream. These points or times are called “Break Points” [2].","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116652418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412230
M. Schmidt, C. Lu, H. Gottlob, H. Kurz
A FUSI NiSi metal gate technology is used to investigate the scaling potential of high-k epitaxial gadolinium oxide (Gd2O3) down to 0.6 nm equivalent oxide thickness. Thermally stable gate stacks have been realized by TiN electrodes on gadolinium silicate. Work function tuning of mid gap electrodes is achieved by insertion of ultrathin AlN buffer layers. Initial results based on sputtered buffer layers are transferred to atomic layer deposition technique in order to achieve atomic control of the thicknesses in combination with conformal deposition.
{"title":"Metal gate electrodes for rare earth oxide high-k dielectrics","authors":"M. Schmidt, C. Lu, H. Gottlob, H. Kurz","doi":"10.1109/ICSCS.2009.5412230","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412230","url":null,"abstract":"A FUSI NiSi metal gate technology is used to investigate the scaling potential of high-k epitaxial gadolinium oxide (Gd2O3) down to 0.6 nm equivalent oxide thickness. Thermally stable gate stacks have been realized by TiN electrodes on gadolinium silicate. Work function tuning of mid gap electrodes is achieved by insertion of ultrathin AlN buffer layers. Initial results based on sputtered buffer layers are transferred to atomic layer deposition technique in order to achieve atomic control of the thicknesses in combination with conformal deposition.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123422979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5414197
L. Rispal, U. Schwalke
In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.
{"title":"Carbon: The future of nanoelectronics","authors":"L. Rispal, U. Schwalke","doi":"10.1109/ICSCS.2009.5414197","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5414197","url":null,"abstract":"In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphenebased transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124941006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-11-01DOI: 10.1109/ICSCS.2009.5412459
N. Abdelmalek, F. Djeffal, M. Abdi, D. Arar
in this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.
{"title":"An accurate threshold voltage model for nanoscale GCGS VSG MOSFET","authors":"N. Abdelmalek, F. Djeffal, M. Abdi, D. Arar","doi":"10.1109/ICSCS.2009.5412459","DOIUrl":"https://doi.org/10.1109/ICSCS.2009.5412459","url":null,"abstract":"in this paper, an accurate analytical threshold voltage model based on terms of surface potential is presented to study the scaling capability of nanoscale graded channel gate stack vertical surrounding gate (GCGS VSG MOSFET). Explicit approximate relations of surface potential and threshold voltage as function of device parameters are developed. The developed model is verified by its good agreement with the numerical simulations.","PeriodicalId":126072,"journal":{"name":"2009 3rd International Conference on Signals, Circuits and Systems (SCS)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124092901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：