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2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.最新文献

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Room temperature operation of InAs-quantum-dot laser utilizing GaAs-photonic-crystal-slab-based line-defect waveguide with optical pump 利用带光泵的gaas光子晶体-板型线缺陷波导室温操作inas量子点激光器
Y. Sugimoto, K. Inoue, N. Ikeda, S. Ohkouchi, Y. Tanaka, Y. Nakamura, H. Nakamura, H. Sasaki, K. Ishida, K. Asakawa
Room temperature operation of lasing from optically-pumped InAs quantum dots embedded in a line defect waveguide in a two-dimensional air-bridge type GaAs-photonic crystal slab is demonstrated. The lasing is found to occur without Fabry-Perot mirrors, and also without any reflection at the sample edge. A distributed feedback mechanism at the band edge with a vanishingly-small group-velocity is responsible for the present lasing.
本文演示了二维气桥型gaas光子晶体板中嵌入线缺陷波导的光泵浦InAs量子点在室温下的激光操作。发现在没有法布里-珀罗反射镜的情况下发生激光,并且在样品边缘也没有任何反射。在带边缘的分布反馈机制与一个逐渐消失的小群速度负责目前的激光。
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引用次数: 0
Experimental investigations into the thermal properties of 1.5-1.8-/spl mu/m InAs/InP quantum dash lasers 1.5 ~ 1.8 μ m /spl μ m InAs/InP量子脉冲激光器热性能的实验研究
I. Marko, A. Adams, S. Sweeney, S. R. Jin, B. Murdin, R. Schwertberger, A. Somers, J. Reithmaier, A. Forchel
We present what we believe to be the first ever high-pressure and spontaneous emission measurements on quantum dash lasers. The results show that temperature sensitivity of these lasers is caused by nonradiative processes, which depend on the lasing wavelength.
我们展示了我们认为是有史以来第一次对量子冲刺激光器进行高压和自发发射测量。结果表明,这些激光器的温度敏感性是由非辐射过程引起的,这取决于激光波长。
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引用次数: 0
期刊
2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.
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