Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382756
T. Mizuno, M. Takeya, S. Ikeda, T. Fujimoto, Y. Ohfuji, K. Oikawa, M. Taniguchi, H. Ichinokura, T. Hashizu, M. Ikeda
We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed in producing BV-LDs with a kink-free output power of more than 150 mW. The threshold current was 35.4 mA at 25/spl deg/C. The operating current and voltage were 65.8 mW and 4.66 V, respectively, under 45 mW CW operation at 25/spl deg/C. Their characteristics came close to surpassing the best characteristics of BV-LDs grown on ELO-GaN/sapphire, demonstrating that practical BV-LDs suitable for next-generation blu-ray disc system can be produced on GaN substrates.
{"title":"High-power blue-violet laser diodes on GaN substrates","authors":"T. Mizuno, M. Takeya, S. Ikeda, T. Fujimoto, Y. Ohfuji, K. Oikawa, M. Taniguchi, H. Ichinokura, T. Hashizu, M. Ikeda","doi":"10.1109/ISLC.2004.1382756","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382756","url":null,"abstract":"We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed in producing BV-LDs with a kink-free output power of more than 150 mW. The threshold current was 35.4 mA at 25/spl deg/C. The operating current and voltage were 65.8 mW and 4.66 V, respectively, under 45 mW CW operation at 25/spl deg/C. Their characteristics came close to surpassing the best characteristics of BV-LDs grown on ELO-GaN/sapphire, demonstrating that practical BV-LDs suitable for next-generation blu-ray disc system can be produced on GaN substrates.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126440750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382725
S. Noda
Semiconductor lasers based on two-dimensional photonic crystals are described. It is shown that unprecedented type of lasers with perfect single mode over a large area and high output power surface-emission can be realized.
{"title":"Photonic crystal semiconductor lasers","authors":"S. Noda","doi":"10.1109/ISLC.2004.1382725","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382725","url":null,"abstract":"Semiconductor lasers based on two-dimensional photonic crystals are described. It is shown that unprecedented type of lasers with perfect single mode over a large area and high output power surface-emission can be realized.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131166367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382762
T. Sale, D. Lancefield, B. Corbett, J. Justice
The paper reports on the development of VCSELs emitting near to 650 nm for low cost links employing PMMA based polymer optical fibre (POF). AlGaInP/AlGaAs VCSELs are fabricated on wafers from two different MOCVD sources. Accelerated ageing tests are done for the two types of devices.
{"title":"Ageing studies on red-emitting VCSELs for polymer optical fibre applications","authors":"T. Sale, D. Lancefield, B. Corbett, J. Justice","doi":"10.1109/ISLC.2004.1382762","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382762","url":null,"abstract":"The paper reports on the development of VCSELs emitting near to 650 nm for low cost links employing PMMA based polymer optical fibre (POF). AlGaInP/AlGaAs VCSELs are fabricated on wafers from two different MOCVD sources. Accelerated ageing tests are done for the two types of devices.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382791
X. Checoury, P. Boucaud, J. Lourtioz, F. Pommereau, C. Cuisin, E. Derouin, O. Drisse, L. Legouezigou, F. Lelarge, F. Poingt, G. Duan, S. Bonnefont, D. Mulin, J. Valentin, F. Lozes
Single mode lasing of square lattice photonic crystal (PhC) waveguides is investigated experimentally and compared to simulation results. Lasing of a Wl PhC waveguide structure at 1.5 /spl mu/m on InP substrate is reported for the first time.
实验研究了方晶格光子晶体(PhC)波导的单模激光，并与仿真结果进行了比较。本文首次报道了在InP衬底上以1.5 /spl μ m /m的速度激光发射Wl - PhC波导结构。
{"title":"Square lattice photonic crystal waveguides for lasers emitting at 1.55 /spl mu/m","authors":"X. Checoury, P. Boucaud, J. Lourtioz, F. Pommereau, C. Cuisin, E. Derouin, O. Drisse, L. Legouezigou, F. Lelarge, F. Poingt, G. Duan, S. Bonnefont, D. Mulin, J. Valentin, F. Lozes","doi":"10.1109/ISLC.2004.1382791","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382791","url":null,"abstract":"Single mode lasing of square lattice photonic crystal (PhC) waveguides is investigated experimentally and compared to simulation results. Lasing of a Wl PhC waveguide structure at 1.5 /spl mu/m on InP substrate is reported for the first time.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129164568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382774
T. Katsuyama, J. Hashimoto, T. Saito, T. Yamada, T. Ishizuka, Y. Tsuji, K. Koyama, Y. Iguchi, K. Fujii, S. Takagishi, A. Ishida
Operation of real index guided GaInNAs quantum well lasers consisting of simple current confinement structure using bandgap difference is presented. The current confinement method is found to be useful to fabricate not only a single low cost optical devices but also photonic integrated circuit consisting with various waveguides and active devices.
{"title":"Bandgap difference current confinement GaInNAs lasers","authors":"T. Katsuyama, J. Hashimoto, T. Saito, T. Yamada, T. Ishizuka, Y. Tsuji, K. Koyama, Y. Iguchi, K. Fujii, S. Takagishi, A. Ishida","doi":"10.1109/ISLC.2004.1382774","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382774","url":null,"abstract":"Operation of real index guided GaInNAs quantum well lasers consisting of simple current confinement structure using bandgap difference is presented. The current confinement method is found to be useful to fabricate not only a single low cost optical devices but also photonic integrated circuit consisting with various waveguides and active devices.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127829065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Micro-mechanically and widely tunable long-wavelength VCSELs","authors":"M. Maute, G. Boehm, M. Amann, F. Riemenschneider, H. Halbritter, P. Meissner","doi":"10.1109/ISLC.2004.1382785","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382785","url":null,"abstract":"An electrically pumped mode-hop-free tunable MEMS-VCSEL emitting at wavelengths around 1.55 /spl mu/m with a tuning range of up to 38 nm is presented.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129364684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382770
W. Chow, D. Huffaker
Effects of excitation-induced dephasing are investigated for semiconductor quantum-dot lasers.
研究了半导体量子点激光器的激发诱导消相效应。
{"title":"Dephasing effects on laser gain in shallow and deep semiconductor quantum dots","authors":"W. Chow, D. Huffaker","doi":"10.1109/ISLC.2004.1382770","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382770","url":null,"abstract":"Effects of excitation-induced dephasing are investigated for semiconductor quantum-dot lasers.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130094935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382730
T. Ohno, T. Ito, K. Yoshino, H. Ito
It was found that the harmonic frequency optical injection locking of the regeneratively mode-locked laser diode occurs through the difference frequency component generation. Synchronization with up to 320-GHz input was also confirmed.
{"title":"Mechanism of harmonic mode locking of the regeneratively mode-locked laser diode","authors":"T. Ohno, T. Ito, K. Yoshino, H. Ito","doi":"10.1109/ISLC.2004.1382730","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382730","url":null,"abstract":"It was found that the harmonic frequency optical injection locking of the regeneratively mode-locked laser diode occurs through the difference frequency component generation. Synchronization with up to 320-GHz input was also confirmed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124900079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382728
M. Mohrle, L. Morl, A. Sigmund, A. Suna, F. Reier, H. Roehle
1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.
{"title":"InGaAsP/InGaAlAs 1.55 /spl mu/m strain-compensated MQW BH lasers with 12.5 GHz cut-off frequency at 90/spl deg/C","authors":"M. Mohrle, L. Morl, A. Sigmund, A. Suna, F. Reier, H. Roehle","doi":"10.1109/ISLC.2004.1382728","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382728","url":null,"abstract":"1.55 /spl mu/m strain-compensated multi-quantum-well buried heterostructure lasers with InGaAsP quantum wells and InGaAlAs barriers were fabricated, yielding high optical power at low threshold currents. At 90/spl deg/C they support a direct modulation with 12.5 GHz.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134309117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382777
E. Nomoto, S. Nakatsuka, H. Sato, N. Takahashi, T. Tsuchiya, T. Kitatani, K. Ouchi, K. Nakahara, M. Aoki
Temperature rise in buried-heterostructure laser was uniform along laser cavity, while that in ridge-waveguide laser was abnormally larger at facets due to thermally enhanced optical absorption, which can be suppressed by using a non-injection facet.
{"title":"Structure dependence of temperature rise in semiconductor lasers","authors":"E. Nomoto, S. Nakatsuka, H. Sato, N. Takahashi, T. Tsuchiya, T. Kitatani, K. Ouchi, K. Nakahara, M. Aoki","doi":"10.1109/ISLC.2004.1382777","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382777","url":null,"abstract":"Temperature rise in buried-heterostructure laser was uniform along laser cavity, while that in ridge-waveguide laser was abnormally larger at facets due to thermally enhanced optical absorption, which can be suppressed by using a non-injection facet.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122518916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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