Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382783
N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, Xingsheng Liu, B. Bhat, C. Zah
Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.
{"title":"Temperature, modulation and reliability characteristics of 1.3 /spl mu/m-VCSELs on InP with AlGaInAs/InP lattice matched DBR","authors":"N. Nishiyama, C. Caneau, B. Hall, G. Guryanov, M. Hu, Xingsheng Liu, B. Bhat, C. Zah","doi":"10.1109/ISLC.2004.1382783","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382783","url":null,"abstract":"Lasing operation up to 125 /spl deg/C of 1.3 /spl mu/m InP-based VCSELs with AlGaInAs/InP DBR has been demonstrated. A single mode power of 0.6 mW at 85 /spl deg/C, 10 Gbit/s transmission through 10 km and >2500 hours lifetime have been achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"282 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116079016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382754
S. H. Pyun, S.H. Lee, I. Lee, W. Jeong, J.W. Jang, R. Stevenson, P. Dapkus, D. Lee, J.H. Lee, D. Oh
Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot laser at 1.44 /spl mu/m with I/sub th/ of 62.5 mA was achieved with a ridge waveguide laser with 2 /spl mu/m ridge width and a cavity length of 400 /spl mu/m.
{"title":"Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot lasers","authors":"S. H. Pyun, S.H. Lee, I. Lee, W. Jeong, J.W. Jang, R. Stevenson, P. Dapkus, D. Lee, J.H. Lee, D. Oh","doi":"10.1109/ISLC.2004.1382754","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382754","url":null,"abstract":"Room temperature cw operation of InGaAs/InGaAsP/lnP quantum dot laser at 1.44 /spl mu/m with I/sub th/ of 62.5 mA was achieved with a ridge waveguide laser with 2 /spl mu/m ridge width and a cavity length of 400 /spl mu/m.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129603742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382763
San-Liang Lee, Chih-Jen Wang, Pei-Ling Jiang, Chiu-Lin Yao, Chia-Chien Lin, W. Ho
Two-section shift-layer DFB lasers are fabricated to realize tunable lasers with high single-mode stability and wavelength converters with reshaping capability. 5.2-nm of wavelength tuning and conversion over 30-THz of input frequencies are demonstrated.
{"title":"Tunable two-section shift-layer DFB lasers and wavelength converters","authors":"San-Liang Lee, Chih-Jen Wang, Pei-Ling Jiang, Chiu-Lin Yao, Chia-Chien Lin, W. Ho","doi":"10.1109/ISLC.2004.1382763","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382763","url":null,"abstract":"Two-section shift-layer DFB lasers are fabricated to realize tunable lasers with high single-mode stability and wavelength converters with reshaping capability. 5.2-nm of wavelength tuning and conversion over 30-THz of input frequencies are demonstrated.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124084827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382746
K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle
High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.
{"title":"Nearly-diffraction limited 980 nm tapered diode lasers with an output power of 6.7 W","authors":"K. Paschke, B. Sumpf, F. Dittmar, G. Erbert, J. Fricke, Arne Knauer, S. Schwertfeger, H. Wenzel, G. Tränkle","doi":"10.1109/ISLC.2004.1382746","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382746","url":null,"abstract":"High-power tapered diode lasers emitting at 980 nm with electrically separated straight and tapered sections have been fabricated. A high beam quality at an output power of 6.7 W was achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115377441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382737
T. Gensty, W. Elsasser
We investigate experimentally and theoretically the relative intensity noise (RIN) of quantum cascade lasers (QCL). We find that the scaling behavior of RIN on the optical power depends on the number of cascaded gain stages.
{"title":"Power scaling behavior of the relative intensity noise of quantum cascade lasers","authors":"T. Gensty, W. Elsasser","doi":"10.1109/ISLC.2004.1382737","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382737","url":null,"abstract":"We investigate experimentally and theoretically the relative intensity noise (RIN) of quantum cascade lasers (QCL). We find that the scaling behavior of RIN on the optical power depends on the number of cascaded gain stages.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114176699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382759
R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert
We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.
{"title":"Record-low thresholds of InGaAsN/GaAs SQWs lasers","authors":"R. Averbeck, G. Jaschke, L. Geelhaar, H. Riechert","doi":"10.1109/ISLC.2004.1382759","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382759","url":null,"abstract":"We present a systematic study on realising low-threshold, long-wavelength lasers based on simplemost InGaAsN/GaAs SWQ structures grown on GaAs by plasma-assisted MBE. Record-low threshold current densities up to 1430 nm are reported.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122949604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382792
K. Ohira, T. Murayama, M. Hirose, H. Yagi, S. Tamura, S. Arai
A distributed reflector (DR) laser consisting of an active DFB section and a passive DBR section was realized by modulating widths of wirelike active regions. A threshold current as low as 1.5 mA, a differential quantum efficiency from the front facet of 21% and a sub-mode suppression ratio (SMSR) over 50 dB were realized for a stripe width of 3.4 /spl mu/m and a DFB section length of 150.
{"title":"Low-threshold operation of distributed reflector laser with width modulated wirelike active regions","authors":"K. Ohira, T. Murayama, M. Hirose, H. Yagi, S. Tamura, S. Arai","doi":"10.1109/ISLC.2004.1382792","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382792","url":null,"abstract":"A distributed reflector (DR) laser consisting of an active DFB section and a passive DBR section was realized by modulating widths of wirelike active regions. A threshold current as low as 1.5 mA, a differential quantum efficiency from the front facet of 21% and a sub-mode suppression ratio (SMSR) over 50 dB were realized for a stripe width of 3.4 /spl mu/m and a DFB section length of 150.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115982991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/ISLC.2004.1382767
R. Fehse, S. Sweeney, A. Adams, D. McConville, H. Riechert, L. Geelhaar
We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3 /spl mu/m GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.
{"title":"Influence of growth temperature on defect density in 1.3/spl mu/m GaInNAs-based lasers","authors":"R. Fehse, S. Sweeney, A. Adams, D. McConville, H. Riechert, L. Geelhaar","doi":"10.1109/ISLC.2004.1382767","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382767","url":null,"abstract":"We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3 /spl mu/m GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130756596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Monolithic dual-wavelength lasers for CD-R/DVD/spl plusmn/RW/R/RW","authors":"S. Agatsuma, N. Hoshi, K. Tanno, H. Iki, S. Yoshida, K. Sahara, S. Uchida, T. Yamamoto","doi":"10.1109/ISLC.2004.1382787","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382787","url":null,"abstract":"We succeeded the monolithic integration of a 160 mW laser for DVD/spl plusmn/RW/R/RAM and a 240 mW laser for CD-R.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129873134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/islc.2004.1382786
K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura
A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.
{"title":"High power 660-nm laser diodes for recordable dual layer","authors":"K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J. Horie, T. Yagi, T. Nishimura","doi":"10.1109/islc.2004.1382786","DOIUrl":"https://doi.org/10.1109/islc.2004.1382786","url":null,"abstract":"A high power 660 nm laser diode (LD) with very high kink level over 300 mW is realized by reduction of the internal loss and optimization of the ridge shape. It is promising for recordable dual layer DVD drives.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"82 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120976509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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