Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382752
J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa
This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.
{"title":"1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition","authors":"J. Tatebayashi, N. Hatori, M. Ishida, H. Ebe, H. Sudou, A. Kuramata, M. Sugawara, Y. Arakawa","doi":"10.1109/ISLC.2004.1382752","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382752","url":null,"abstract":"This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By growing Al/sub 0.4/Ga/sub 0.6/As upper cladding layer at low temperature, the effect of post-growth annealing of InAs QDs is suppressed and 1.28 /spl mu/m cw lasing at room temperature of stacked InAs/GaAs QD lasers is achieved.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125476919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382797
H. Arimoto, H. Sato, T. Kitatami, T. Tsuchiya, K. Shinoda, A. Takei, H. Uchiyama, M. Aoki, S. Tsuji
We demonstrated a wide-wavelength (1533-1568 nm), high-output power (30 mW) operation in a short-cavity DBR laser array by incorporating an active single quantum well in DBR mirrors.
{"title":"Wide-wavelength-range and high-output-power short-cavity DBR laser array with active distributed Bragg reflector","authors":"H. Arimoto, H. Sato, T. Kitatami, T. Tsuchiya, K. Shinoda, A. Takei, H. Uchiyama, M. Aoki, S. Tsuji","doi":"10.1109/ISLC.2004.1382797","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382797","url":null,"abstract":"We demonstrated a wide-wavelength (1533-1568 nm), high-output power (30 mW) operation in a short-cavity DBR laser array by incorporating an active single quantum well in DBR mirrors.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127131945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382744
C. Zah, Yabo Li, R. Bhat, K. Song, N. Visovsky, H. Nguyen, Xingsheng Liu, M. Hu, N. Nishiyama
We report a high kink-free facet power of 852 mW and a high single-wavelength facet power of 350 mW for 1060-nm raised-ridge Fabry-Perot (FP) and distributed-feedback (DFB) lasers, respectively.
{"title":"High power 1060-nm raised-ridge strained single-quantum-well lasers","authors":"C. Zah, Yabo Li, R. Bhat, K. Song, N. Visovsky, H. Nguyen, Xingsheng Liu, M. Hu, N. Nishiyama","doi":"10.1109/ISLC.2004.1382744","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382744","url":null,"abstract":"We report a high kink-free facet power of 852 mW and a high single-wavelength facet power of 350 mW for 1060-nm raised-ridge Fabry-Perot (FP) and distributed-feedback (DFB) lasers, respectively.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127988253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382771
S. Arahira, H. Yaegashi, K. Nakamura, Y. Ogawa
Broad-band wavelength tuning over 60 nm was successfully achieved in monolithic 40 GHz actively mode-locked laser diode with external CW light injection, remaining short pulse width (< 4 ps), low timing jitter of 0.18 ps, and low RIN value (< -130 dB/Hz).
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382793
S. Ishii, A. Nakagawa, T. Baba
We experimentally and theoretically demonstrate bistable lasing in a photonic molecule composed of twin microdisks. The photopump threshold was as low as 165 /spl mu/W at room temperature, which is promising for functional photonic circuits.
{"title":"Bistable lasing in twin microdisk photonic molecules","authors":"S. Ishii, A. Nakagawa, T. Baba","doi":"10.1109/ISLC.2004.1382793","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382793","url":null,"abstract":"We experimentally and theoretically demonstrate bistable lasing in a photonic molecule composed of twin microdisks. The photopump threshold was as low as 165 /spl mu/W at room temperature, which is promising for functional photonic circuits.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121455346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382764
S. Pawlik, J. Muller, N. Lichtenstein, D. Jaeggi, B. Schmidt
A reliable 808-nm single mode laser diodes with a low divergent beam and high light output power is demonstrated. The device is found to be applicable for longitudinal pumping of Nd-doped solid state lasers.
{"title":"Reliable 808-nm high power laser diodes","authors":"S. Pawlik, J. Muller, N. Lichtenstein, D. Jaeggi, B. Schmidt","doi":"10.1109/ISLC.2004.1382764","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382764","url":null,"abstract":"A reliable 808-nm single mode laser diodes with a low divergent beam and high light output power is demonstrated. The device is found to be applicable for longitudinal pumping of Nd-doped solid state lasers.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"100 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121341146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382800
M. Gotoda, T. Nishimura, Y. Tokuda
A 30 nm tunable laser diode utilizing front SG-DBR and rear SSG-DBR was demonstrated for the first time. High output power over 45 mW as well as good wavelength control was achieved with SMSR greater than 40 dB.
{"title":"Widely tunable SOA-integrated DBR laser with combination of sampled-grating and superstructure grating","authors":"M. Gotoda, T. Nishimura, Y. Tokuda","doi":"10.1109/ISLC.2004.1382800","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382800","url":null,"abstract":"A 30 nm tunable laser diode utilizing front SG-DBR and rear SSG-DBR was demonstrated for the first time. High output power over 45 mW as well as good wavelength control was achieved with SMSR greater than 40 dB.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122691093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382769
W. Chow, S. Wieczorek, A. Fischer, M. Crawford, A. Allerman, S.R. Lee
Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.
{"title":"Reducing internal field effects with high aluminum AlGaN quantum wells","authors":"W. Chow, S. Wieczorek, A. Fischer, M. Crawford, A. Allerman, S.R. Lee","doi":"10.1109/ISLC.2004.1382769","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382769","url":null,"abstract":"Transition from heavy hole to crystal-field-split hole ground state is found to significantly reduce internal-field effects on optical properties, which should improve laser performance. The effect comes from increasing aluminum concentration in AlGaN quantum wells.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122729226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382798
N. Fujiwara, N. Kikuchi, T. Kakitsuka, Y. Kawaguchi, H. Okamoto, Y. Kondo, H. Yasaka, Y. Yoshikuni, Y. Tohmori
The mode-hop-free tuning range is enhanced from 3.9 to 6.0 nm by utilizing the self-phase-adjustment effect in a short-active-region DBR laser. The optical power is more than 1 mW for whole tuning range, and the maximum power of more than 4 mW is observed. This report discusses the self-phase-adjustment mechanism.
{"title":"Mode-hop-free tuning range enhanced by self-phase-adjustment in a short-active-region DBR laser","authors":"N. Fujiwara, N. Kikuchi, T. Kakitsuka, Y. Kawaguchi, H. Okamoto, Y. Kondo, H. Yasaka, Y. Yoshikuni, Y. Tohmori","doi":"10.1109/ISLC.2004.1382798","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382798","url":null,"abstract":"The mode-hop-free tuning range is enhanced from 3.9 to 6.0 nm by utilizing the self-phase-adjustment effect in a short-active-region DBR laser. The optical power is more than 1 mW for whole tuning range, and the maximum power of more than 4 mW is observed. This report discusses the self-phase-adjustment mechanism.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117059436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382747
N. Lichtenstein, Y. Manz, P. Mauron, A. FiIy, S. Arlt
Single mode emitter array laser bars with >50 W output power from 50 narrow stripe emitters >100 W from 200 emitters at improved beam quality is presented covering the 9xx nm wavelength range.
{"title":"Single mode emitter array laser bars for high-brightness applications","authors":"N. Lichtenstein, Y. Manz, P. Mauron, A. FiIy, S. Arlt","doi":"10.1109/ISLC.2004.1382747","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382747","url":null,"abstract":"Single mode emitter array laser bars with >50 W output power from 50 narrow stripe emitters >100 W from 200 emitters at improved beam quality is presented covering the 9xx nm wavelength range.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116015489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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