Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382742
A. Knigge, G. Erbert, P. Ressel, B. Sumpf, H. Wenzel, G. Trankle
940 nm laser bars with optimised layer structures will be reported. 100 W output power, wall plug efficiency above 60% and a vertical divergence of 27/spl deg/ FWHM were achieved despite mounting on passively cooled heat sinks only.
{"title":"100 W-output power from passively cooled laser bar with 30% filling factor","authors":"A. Knigge, G. Erbert, P. Ressel, B. Sumpf, H. Wenzel, G. Trankle","doi":"10.1109/ISLC.2004.1382742","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382742","url":null,"abstract":"940 nm laser bars with optimised layer structures will be reported. 100 W output power, wall plug efficiency above 60% and a vertical divergence of 27/spl deg/ FWHM were achieved despite mounting on passively cooled heat sinks only.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130948551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382738
S. Hofling, R. Kallweit, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel
Quantum-cascade micro-lasers with Bragg-mirrors operating up to 315 K have been realized. Due to the large mode spacing in short cavity lasers and the limited gain bandwidth, single mode emission in such devices is possible.
{"title":"Ultra-short GaAs/AlGaAs quantum-cascade micro-lasers based on monolithically integrated semiconductor-air Bragg-mirrors","authors":"S. Hofling, R. Kallweit, A. Wolf, M. Emmerling, J. Reithmaier, A. Forchel","doi":"10.1109/ISLC.2004.1382738","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382738","url":null,"abstract":"Quantum-cascade micro-lasers with Bragg-mirrors operating up to 315 K have been realized. Due to the large mode spacing in short cavity lasers and the limited gain bandwidth, single mode emission in such devices is possible.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115126434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382731
K. Tsuruoka, R. Kobayashi, Y. Ohsawa, T. Tsukuda, T. Kato, T. Sasaki, T. Nakamura
We have developed a 4-channel AlGaInAs MQW-BH-DFB-LD array for 1.3-/spl mu/m CWDM systems. High-speed characteristics up to a 10-Gb/s operation on all channels, and more than a 40-Gb/s throughput woe obtained at 85/spl deg/C.
{"title":"4-channel /spl times/ 10-Gb/s operation of AlGaInAs-MQW-BH-DFB-LD array for 1-3-/spl mu/m CWDM systems","authors":"K. Tsuruoka, R. Kobayashi, Y. Ohsawa, T. Tsukuda, T. Kato, T. Sasaki, T. Nakamura","doi":"10.1109/ISLC.2004.1382731","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382731","url":null,"abstract":"We have developed a 4-channel AlGaInAs MQW-BH-DFB-LD array for 1.3-/spl mu/m CWDM systems. High-speed characteristics up to a 10-Gb/s operation on all channels, and more than a 40-Gb/s throughput woe obtained at 85/spl deg/C.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128379962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382789
J.R. Cao, W. Kuang, S. Choi, J. O'Brien, P. Dapkus
We have demonstrated the ability to selectively modify the mode structure of multi-moded photonic crystal laser cavity. As a result, in this case an improved side-mode suppression ratio was obtained.
{"title":"Modified photonic crystal D/sub 3/ laser cavity for improving side mode suppression ratio","authors":"J.R. Cao, W. Kuang, S. Choi, J. O'Brien, P. Dapkus","doi":"10.1109/ISLC.2004.1382789","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382789","url":null,"abstract":"We have demonstrated the ability to selectively modify the mode structure of multi-moded photonic crystal laser cavity. As a result, in this case an improved side-mode suppression ratio was obtained.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125342662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382780
J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik
We present polarization-stable InGaAs/GaAs VCSELs with up to 6 mW single-mode output power. The orientation of their polarization along the [011],[0~11] [010] or [001] crystal axis is defined and controlled by a dielectric grating relief.
{"title":"High single-mode power, monolithic polarization-controlled oxide-confined grating relief VCSELs","authors":"J. Ostermann, P. Debernardi, C. Jalics, M. Feneberg, A. Kroner, M.C. Reidi, M. Golling, R. Michalzik","doi":"10.1109/ISLC.2004.1382780","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382780","url":null,"abstract":"We present polarization-stable InGaAs/GaAs VCSELs with up to 6 mW single-mode output power. The orientation of their polarization along the [011],[0~11] [010] or [001] crystal axis is defined and controlled by a dielectric grating relief.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122576168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382776
C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch
A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.
{"title":"Sub 1% per 1 0000 h degradation rate of multimode 805 nm AlInGaAs lasers at 90/spl deg/C QW temperature and 16 mW//spl mu/m","authors":"C. Silfvenius, P. Blixt, C. Lindstrom, A. Feitisch","doi":"10.1109/ISLC.2004.1382776","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382776","url":null,"abstract":"A 200 h life test of nitride passivated AlInGaAs multimode lasers, with more than 20% aluminum, operating at 16 mW//spl mu/m, demonstrated a linear degradation rate of less than 0.1%/1000 h under stress conditions of 90 /spl deg/C QW temperature and 2500 A/cm/sup 2/ current density. No devices failed.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"199 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120965800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382782
L. Chrostowski, P. Bala Subrahmanyam, Y. Zhou, C. Chang-Hasnain
We demonstrate that optical feedback in single-mode VCSELs only induces a power-penalty with no error-floor, thus enabling the integration of VCSELs without optical isolators, for optical interconnect applications.
{"title":"VCSEL tolerance to optical feedback for inter-chip optical interconnects","authors":"L. Chrostowski, P. Bala Subrahmanyam, Y. Zhou, C. Chang-Hasnain","doi":"10.1109/ISLC.2004.1382782","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382782","url":null,"abstract":"We demonstrate that optical feedback in single-mode VCSELs only induces a power-penalty with no error-floor, thus enabling the integration of VCSELs without optical isolators, for optical interconnect applications.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116062418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382751
M. Thompson, C. Marinelli, Y. Chu, R. Sellin, R. Penty, L. White, M. van der Poel, D. Birkedal, J. Hvam, V. Ustinov, M. Lammlin, D. Bimberg
Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.
{"title":"Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers","authors":"M. Thompson, C. Marinelli, Y. Chu, R. Sellin, R. Penty, L. White, M. van der Poel, D. Birkedal, J. Hvam, V. Ustinov, M. Lammlin, D. Bimberg","doi":"10.1109/ISLC.2004.1382751","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382751","url":null,"abstract":"Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126540897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382726
M. Amann
The recent progress in semiconductor lasers aimed for applications in the wavelength range above 2 /spl mu/m is reviewed. This particularly includes antimonide-based lasers and type-I and type-II quantum-cascade lasers.
{"title":"Applications of and advances in long-wavelength (>2/spl mu/m) lasers","authors":"M. Amann","doi":"10.1109/ISLC.2004.1382726","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382726","url":null,"abstract":"The recent progress in semiconductor lasers aimed for applications in the wavelength range above 2 /spl mu/m is reviewed. This particularly includes antimonide-based lasers and type-I and type-II quantum-cascade lasers.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128751295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-09-21DOI: 10.1109/ISLC.2004.1382799
J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren
A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.
{"title":"InGaAsP/InP gain-levered tunable lasers","authors":"J.M. Huthinson, L.A. Johannson, J. Getty, J. Henness, L. Coldren","doi":"10.1109/ISLC.2004.1382799","DOIUrl":"https://doi.org/10.1109/ISLC.2004.1382799","url":null,"abstract":"A tunable gain-levered laser is fabricated on an InGaAsP ridge waveguide, and demonstrates increased CW differential efficiency and sharp DC turn-on, with hysteretic characteristics. The devices can be directly modulated up to >2.5 Gb/s.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127324596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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