Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237267
J. Tsai
A newly designed single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with n/sup +/-GaAs/p/sup +/-InGaP/n-InGaP camel gate structure has been first fabricated and demonstrated. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show an extrinsic transconductance of 85 mS/mm and a saturation current density of 425 mA/mm. Significantly, due to the p-n depletion from p/sup +/-InGaP gate to channel region and the presence of /spl Delta/Ec at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. In addition, an extremely broad gate voltage swing larger than 3 V with above 80% maximum g/sub m/ is obtained. The unit current cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ are up to 18 and 30 GHz, respectively.
{"title":"Performance of InGaP/InGaAs/GaAs camel-gate single /spl delta/-doping pHEMT","authors":"J. Tsai","doi":"10.1109/COMMAD.2002.1237267","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237267","url":null,"abstract":"A newly designed single delta-doped InGaP/InGaAs/GaAs pseudomorphic HEMT with n/sup +/-GaAs/p/sup +/-InGaP/n-InGaP camel gate structure has been first fabricated and demonstrated. For a 1/spl times/100 /spl mu/m/sup 2/ device, the experimental results show an extrinsic transconductance of 85 mS/mm and a saturation current density of 425 mA/mm. Significantly, due to the p-n depletion from p/sup +/-InGaP gate to channel region and the presence of /spl Delta/Ec at InGaP/InGaAs heterostructure, the turn-on voltage of gate is larger than 1.7 V. In addition, an extremely broad gate voltage swing larger than 3 V with above 80% maximum g/sub m/ is obtained. The unit current cutoff frequency f/sub T/ and maximum oscillation frequency f/sub max/ are up to 18 and 30 GHz, respectively.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115748260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237320
X.D. Luo, C. Yang, J. Huang, Z. Xu, J. Liu, W. Ge, Y. Zhang, A. Mascarenhas, H. Xin, C. Tu
GaAs/sub 1-x/N/sub x/ alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.
{"title":"Optical study of electronic states in GaAsN","authors":"X.D. Luo, C. Yang, J. Huang, Z. Xu, J. Liu, W. Ge, Y. Zhang, A. Mascarenhas, H. Xin, C. Tu","doi":"10.1109/COMMAD.2002.1237320","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237320","url":null,"abstract":"GaAs/sub 1-x/N/sub x/ alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitation PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128335567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237234
K. Galatsis, W. Wlodarski, K. Kalantar-zadeh, A. Trinchi
Car cabin air quality monitoring can effectively be analysed using metal oxide semiconducting (MOS) gas sensors. In this paper, commercially available gas sensors are compared with fabricated MoO/sub 3/-TiO/sub 2/ and MoO/sub 3/- WO/sub 3/ thin films. The laboratory tests showed that the MoO/sub 3/ based sensors possessed comparable gas sensing properties. The MoO/sub 3/(75%)-TiO/sub 2/(25%) sensor has a response 74% higher relative to the best commercial sensor tested.
{"title":"Investigation of gas sensors for cabin air quality monitoring","authors":"K. Galatsis, W. Wlodarski, K. Kalantar-zadeh, A. Trinchi","doi":"10.1109/COMMAD.2002.1237234","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237234","url":null,"abstract":"Car cabin air quality monitoring can effectively be analysed using metal oxide semiconducting (MOS) gas sensors. In this paper, commercially available gas sensors are compared with fabricated MoO/sub 3/-TiO/sub 2/ and MoO/sub 3/- WO/sub 3/ thin films. The laboratory tests showed that the MoO/sub 3/ based sensors possessed comparable gas sensing properties. The MoO/sub 3/(75%)-TiO/sub 2/(25%) sensor has a response 74% higher relative to the best commercial sensor tested.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123703152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237245
G. Dohler, M. Eckardt, A. Schwanhauber, F. Renner, L. Robledo, A. Friedrich, P. Pohl, S. Malzer, P. Kiesel, D. Driscoll, M. Hanson, A. Gossard
We report on a novel concept for THz-photomixers with strongly increased conversion efficiency. In the familiar THz photomixers, based on photoconductivity in "Low-temperature-grown-GaAs" (LT-GaAs) the performance depends critically on an extremely short lifetime of photo-generated charge carriers in LT-GaAs and is typically limited by the (very low) photoconductive gain. In our photomixer the gain does not depend on the recombination lifetime but only on the transit time and on the path length of the photo-generated electrons within suitably designed p-i-n /spl I.bar/ nanostructures, which both can be optimized if the transport is (primarily) ballistic. In addition, impedance matching to the attached antenna can be achieved.
{"title":"Ballistic transport in nanostructures used for novel THz emitters","authors":"G. Dohler, M. Eckardt, A. Schwanhauber, F. Renner, L. Robledo, A. Friedrich, P. Pohl, S. Malzer, P. Kiesel, D. Driscoll, M. Hanson, A. Gossard","doi":"10.1109/COMMAD.2002.1237245","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237245","url":null,"abstract":"We report on a novel concept for THz-photomixers with strongly increased conversion efficiency. In the familiar THz photomixers, based on photoconductivity in \"Low-temperature-grown-GaAs\" (LT-GaAs) the performance depends critically on an extremely short lifetime of photo-generated charge carriers in LT-GaAs and is typically limited by the (very low) photoconductive gain. In our photomixer the gain does not depend on the recombination lifetime but only on the transit time and on the path length of the photo-generated electrons within suitably designed p-i-n /spl I.bar/ nanostructures, which both can be optimized if the transport is (primarily) ballistic. In addition, impedance matching to the attached antenna can be achieved.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124750409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237223
G. Jakovidis, I. Jamieson, K. Pavlov, A. Singh
Highly oriented MoS/sub 2/ films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800/spl deg/C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800/spl deg/C and 80/spl deg/C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.
{"title":"Bulk and surface textured MoS/sub 2/ films on GaAs","authors":"G. Jakovidis, I. Jamieson, K. Pavlov, A. Singh","doi":"10.1109/COMMAD.2002.1237223","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237223","url":null,"abstract":"Highly oriented MoS/sub 2/ films on GaAs, suitable for photovoltaic applications, have been obtained using radio frequency (RF)-sputtering. Depositions at 800/spl deg/C exhibit strong [00l] X-ray reflections, indicative of bulk type II texture. Atomic force microscopy (AFM) reveals the orientation of surface platelets for films grown at 800/spl deg/C and 80/spl deg/C, to be consistent with the X-ray data. This study demonstrates that provided the RF-power is kept low (50 W) and the temperature high, well textured type II films up to 500 nm can be deposited, without the need to resort to expensive vapor transport techniques.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123320123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237211
M. Buda, C. Jagadish
The purpose of this paper is to investigate a technique to theoretically compute the modal reflectivity of a lasing mode at a partially etched mirror. The research also aims to apply the result to a practical case of integration between a laser diode and a waveguide using the feedback from a partially etched mirror.
{"title":"Computation of the modal reflectivity for a partially etched mirror: application for integration of a laser diode and a waveguide","authors":"M. Buda, C. Jagadish","doi":"10.1109/COMMAD.2002.1237211","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237211","url":null,"abstract":"The purpose of this paper is to investigate a technique to theoretically compute the modal reflectivity of a lasing mode at a partially etched mirror. The research also aims to apply the result to a practical case of integration between a laser diode and a waveguide using the feedback from a partially etched mirror.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127570651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237315
J. Dell, K. Winchester, C. Musca, J. Antoszewski, L. Faraone
This paper presents the implementation of inductors for on-chip integration with RF electronics. The inductors were fabricated using silicon bulk micromachining to form a micro-electro-mechanical system (MEMS) that is free from eddy-current losses found in spiral inductors formed using conventional silicon processing. By using the fabrication approach developed here, the resulting inductors are electrically tunable with the application of low DC bias voltages.
{"title":"Variable MEMS-based inductors fabricated from PECVD silicon nitride","authors":"J. Dell, K. Winchester, C. Musca, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2002.1237315","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237315","url":null,"abstract":"This paper presents the implementation of inductors for on-chip integration with RF electronics. The inductors were fabricated using silicon bulk micromachining to form a micro-electro-mechanical system (MEMS) that is free from eddy-current losses found in spiral inductors formed using conventional silicon processing. By using the fabrication approach developed here, the resulting inductors are electrically tunable with the application of low DC bias voltages.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121259661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237258
P. Reece, G. Lerondel, W. Zheng, A. Bruyant, M. Gal
Porous silicon has a number of demonstrated optical properties that are ideal for a broad range of applications in photonics and optoelectronics research. Technologies based on the tunability of the optical properties of porous silicon such as the refractive index and the ability to grow monolithic multi-layered structures has emerged as new focus of research. In this paper we report on developments relating to porous silicon based microcavities and Bragg reflectors, which have significant implications for a diverse range of applications. Fabrication of a one-dimensional photonic crystal with photonic band-gap is demonstrated. We have also fabricated microcavity structures that exhibit cavity resonances with sub-nanometer line-widths and very high Q-factors (> 7300). Such structures could be useful as both passive and active devices such as narrow bandpass filters and environmental sensors.
{"title":"Porous silicon: A photonic material for all seasons","authors":"P. Reece, G. Lerondel, W. Zheng, A. Bruyant, M. Gal","doi":"10.1109/COMMAD.2002.1237258","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237258","url":null,"abstract":"Porous silicon has a number of demonstrated optical properties that are ideal for a broad range of applications in photonics and optoelectronics research. Technologies based on the tunability of the optical properties of porous silicon such as the refractive index and the ability to grow monolithic multi-layered structures has emerged as new focus of research. In this paper we report on developments relating to porous silicon based microcavities and Bragg reflectors, which have significant implications for a diverse range of applications. Fabrication of a one-dimensional photonic crystal with photonic band-gap is demonstrated. We have also fabricated microcavity structures that exhibit cavity resonances with sub-nanometer line-widths and very high Q-factors (> 7300). Such structures could be useful as both passive and active devices such as narrow bandpass filters and environmental sensors.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123791142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237311
S. Lu, C. Yang, J. Dai, J.S. Hsuang, W. Ge, Y.Q. Wang, J. Zhang, D. Shen, J. Wang
A series of Zn/sub 1-x/Mn/sub x/Se thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.
{"title":"The study of optical properties of Zn/sub 1-x/MN/sub x/Se thin films grown by MOCVD on GaAs substrates","authors":"S. Lu, C. Yang, J. Dai, J.S. Hsuang, W. Ge, Y.Q. Wang, J. Zhang, D. Shen, J. Wang","doi":"10.1109/COMMAD.2002.1237311","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237311","url":null,"abstract":"A series of Zn/sub 1-x/Mn/sub x/Se thin film samples with different Mn compositions were grown by metal-organic chemical vapor deposition. X-ray diffraction measurements indicated the good crystallinity of samples. Two emission peaks were observed in photoluminescence (PL) spectra close to the band edge for the samples. The temperature dependence of PL shows the change of the relative intensity of the two emission peaks, which is attributed to the competition between band-to-band excitonic transitions and transitions of localized excitons bound to Mn-induced impurity bound states. Time-resolved PL measurements and PL under different excitation power also support this analysis. Further investigation implies that the impurity bound states are associated with Mn incorporation.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237230
K. Mitsubayashi, Y. Hashimoto, T. Kon
A bio-optical gas-sensor (sniffer device) was constructed by immobilizing flavin-containing monooxygenase 3 (FMO3, one of xenobiotic metabolizing enzymes for catalyzing the oxidation of odorous substances such as trimethylamine: TMA) onto a tip of a fiber optic oxygen sensor with oxygen sensitive ruthenium organic complex (excitation: 470 nm, fluorescent: 600 nm) with a tube-ring. A reaction unit for circulating buffer solution was applied to the tip of the sniffer device. A substrate regeneration cycle was applied to the FMO3 immobilized sensor in order to amplify the output signal by coupling the monooxygenase with a reducing reagent system of ascorbic acid (AsA) in phosphate buffer. The bio-optical sniffer was possible to detect the oxygen consumption induced by FOM3 enzymatic reaction with TMA application. The sniffer device with 10.0 mmol/1 AsA could be used to measure TMA vapor from 0.31 to 125 ppm, this covers the maximum permissible concentration in the work place (5.0 ppm of Time Weighted Average concentration) and the sensing level-5 of smell in humans (3.0 ppm). The sniffer device possessed high selectivity for TMA being attributable to the FMO3 substrate specificity, continuous measurability.
{"title":"Bio-optical gas-sensor (sniffer device) with a fiber optic oxygen sensor","authors":"K. Mitsubayashi, Y. Hashimoto, T. Kon","doi":"10.1109/COMMAD.2002.1237230","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237230","url":null,"abstract":"A bio-optical gas-sensor (sniffer device) was constructed by immobilizing flavin-containing monooxygenase 3 (FMO3, one of xenobiotic metabolizing enzymes for catalyzing the oxidation of odorous substances such as trimethylamine: TMA) onto a tip of a fiber optic oxygen sensor with oxygen sensitive ruthenium organic complex (excitation: 470 nm, fluorescent: 600 nm) with a tube-ring. A reaction unit for circulating buffer solution was applied to the tip of the sniffer device. A substrate regeneration cycle was applied to the FMO3 immobilized sensor in order to amplify the output signal by coupling the monooxygenase with a reducing reagent system of ascorbic acid (AsA) in phosphate buffer. The bio-optical sniffer was possible to detect the oxygen consumption induced by FOM3 enzymatic reaction with TMA application. The sniffer device with 10.0 mmol/1 AsA could be used to measure TMA vapor from 0.31 to 125 ppm, this covers the maximum permissible concentration in the work place (5.0 ppm of Time Weighted Average concentration) and the sensing level-5 of smell in humans (3.0 ppm). The sniffer device possessed high selectivity for TMA being attributable to the FMO3 substrate specificity, continuous measurability.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132096597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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