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Investigation of Impact of the Annealing on Magnetothermal Properties of Zn0.2Mn0.8Fe2O4 Nanoparticles 退火对Zn0.2Mn0.8Fe2O4纳米颗粒磁热性能影响的研究
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-01-02 DOI: 10.1109/LMAG.2022.3233222
Nan N. Liu;Yulia A. Alekhina;Alexander P. Pyatakov;Nikolai S. Perov;Boris B. Kovalev;Gleb B. Sukhorukov;Alexander M. Tishin;Tomomasa Moriwaki;Kenta Nakazawa;Yuko Ichiyanagi
Magnetic and magnetothermal properties of annealed Zn0.2Mn0.8Fe2O4 nanoparticles with diameter value, ranging from 9 to 35 nm, have been investigated and compared with earlier investigated unannealed Zn0.2Mn0.8Fe2O4 magnetic nanoparticles (MNPs). A single-phase spinel structure was observed in both types of MNPs. It has been demonstrated that for the large annealed Zn0.2Mn0.8Fe2O4 nanoparticles (24.7, 31.4, 35.1 nm) the value of specific absorption rate (SAR) is proportional to the amplitude of the magnetic field as ∼H4. However, for earlier investigated unannealed Zn0.2Mn0.8Fe2O4 MNPs, superquadratic dependence SAR ∼H5 have been found starting from 13 nm. Significant change of dependence of the character of SAR(d) may be explained by low values of hysteresis area of small annealed MNPs and, thus, dominant role of Néel relaxation in these annealed Zn0.2Mn0.8Fe2O4 nanoparticles.
研究了直径值为9至35nm的退火Zn0.2Mn0.8Fe2O4纳米颗粒的磁性和磁热性能,并与早期研究的未退火Zn0.2Mn0.8Fe2O4-磁性纳米颗粒(MNPs)进行了比较。在两种类型的MNP中都观察到单相尖晶石结构。已经证明,对于大的退火Zn0.2Mn0.8Fe2O4纳米颗粒(24.7,31.4,35.1nm),比吸收率(SAR)的值与磁场的振幅成正比,为~H4。然而,对于早期研究的未退火Zn0.2Mn0.8Fe2O4 MNP,已经发现从13 nm开始的超二次依赖SAR~H5。SAR(d)特性依赖性的显著变化可以通过小退火MNP的磁滞面积的低值来解释,因此,Néel弛豫在这些退火Zn0.2Mn0.8Fe2O4纳米颗粒中的主导作用。
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引用次数: 0
IEEE Magnetics Society Information IEEE 磁学学会信息
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3360173
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引用次数: 0
2023 Index IEEE Magnetics Letters Vol. 14 2023 Index IEEE Magnetics Letters Vol.
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3372428
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引用次数: 0
IEEE Magnetics Letters Publication Information IEEE Magnetics Letters 出版信息
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3360177
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引用次数: 0
About the Cover 关于封面
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3360169
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引用次数: 0
TechRxiv: Share Your Preprint Research with the World! TechRxiv:与世界分享您的预印本研究成果!
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-01-01 DOI: 10.1109/LMAG.2024.3379164
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引用次数: 0
Numerical Study on the Magnetization Characteristics of Chainlike Magnetic Nanoparticles 链状磁性纳米颗粒磁化特性的数值研究
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-12-23 DOI: 10.1109/LMAG.2022.3231819
Haochen Zhang;Yi Sun;Zhongzhou Du;Teruyoshi Sasayama;Takashi Yoshida
This work investigated chainlike magnetic nanoparticles (CMNPs), which are a type of magnetic nanoparticle (MNP) with a dipole–dipole interaction in which individual nanoparticles are connected to form a chainlike structure. We numerically analyzed the ac magnetization characteristics of the CMNP and the single-core MNP (SMNP) using the Landau–Lifshitz–Gilbert equation. Owing to the magnetic dipole–dipole interaction, the magnetization of the CMNP is approximately 10 times that of the SMNP under a certain excitation field. MNPs with a chainlike structure are thus expected to have enhanced magnetization characteristics and better performance in medical applications. Additionally, it was found that stronger magnetization can be expected from a CMNP connecting 10 or more magnetic cores with a size of approximately 10–12 nm.
这项工作研究了链状磁性纳米颗粒(CMNP),这是一种具有偶极-偶极相互作用的磁性纳米颗粒,其中单个纳米颗粒连接形成链状结构。我们使用Landau–Lifshitz–Gilbert方程对CMNP和单核MNP(SMNP)的交流磁化特性进行了数值分析。由于磁偶极-偶极相互作用,在一定的激发场下,CMNP的磁化强度大约是SMNP的10倍。因此,具有链状结构的MNP有望在医学应用中具有增强的磁化特性和更好的性能。此外,研究发现,连接10个或更多尺寸约为10–12 nm的磁芯的CMNP可以预期更强的磁化强度。
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引用次数: 0
Integration of Novel High-Frequency Transformer With Silicon-Carbide Schottky Diodes 新型高频变压器与碳化硅肖特基二极管的集成
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-12-14 DOI: 10.1109/LMAG.2022.3229230
Weichong Yao;Junwei Lu;Andrew Seagar;Feifei Bai;Foad Taghizadeh
This letter presents a novel and compact structure that integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the volume of a power converter and, in turn, the system to which it is applied. It would also greatly reduce the leakage inductances of an HFT as well as the inductive electromagnetic interference to surrounding components and devices. A prototype HFT shaped much like a torus is designed for integration with SiC Schottky diodes. The three-dimensional finite-element method simulation technique is used to design and analyze the magnetic structure of the HFT including the space reserved for the SiC Schottky diodes. Experimental results are presented for both the HFT as a separate component and as a system integrated with SiC Schottky diodes.
这封信提出了一种新颖紧凑的结构,将碳化硅(SiC)肖特基二极管集成在高频变压器(HFT)中。所提出的结构将减少功率转换器的体积,进而减少其所应用的系统的体积。它还将大大降低HFT的泄漏电感以及对周围组件和设备的感应电磁干扰。设计了一个形状非常像环面的HFT原型,用于与SiC肖特基二极管集成。采用三维有限元模拟技术,设计和分析了HFT的磁结构,包括为SiC肖特基二极管预留的空间。给出了HFT作为单独部件和与SiC肖特基二极管集成的系统的实验结果。
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引用次数: 0
Effect of Gas Composition During Pt Sputtering on Structural and Magnetic Properties of CoFeB Thin Films Pt溅射过程中气体成分对CoFeB薄膜结构和磁性能的影响
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-12-13 DOI: 10.1109/LMAG.2022.3225742
Hans T. Nembach;Justin M. Shaw;Chloe S. Taylor;Daniel B. Gopman
Ultrathin Ta/CoFeB/Pt trilayer structures are relevant to a wide range of spintronic applications, from magnetic tunnel junctions to skyrmionics devices. Controlling the perpendicular magnetic anisotropy, Gilbert damping, and Dzyaloshinskii–Moriya interaction (DMI) in the CoFeB layer is key for these applications. We examine the role of sputter gas composition during the Pt overlayer deposition of a Ta/CoFeB/Pt trilayer in Ar, Kr, and Xe working gas environments during direct current magnetron sputtering. The decreasing density of the Pt layer (from 21 to 15 g/cm3) was apparent in specular X-ray reflectivity measurements of the trilayer films when increasing the molecular weight of the sputtering gas from Ar to Kr to Xe. Significant effects on the Gilbert damping and the interfacial DMI energy were observed, with increases in the damping from 0.037(1) to 0.042(1) to 0.048(1), and reductions in the interfacial DMI from 0.47(4) mJ/m2 to 0.45(5) mJ/m2 to 0.39(4) mJ/m2. The ability to control the perpendicular magnetization and DMI strength of these materials through judicious interfacial control is a means toward magnetic devices with better stability at smaller lateral dimensions, the key to device scaling for spintronic device arrays.
超薄Ta/CoFeB/Pt三层结构与广泛的自旋电子应用有关,从磁性隧道结到skyrmionics器件。控制CoFeB层中的垂直磁各向异性、Gilbert阻尼和Dzyaloshinskii–Moriya相互作用(DMI)是这些应用的关键。我们研究了在直流磁控溅射过程中,在Ar、Kr和Xe工作气体环境中,在Ta/CoFeB/Pt三层的Pt覆盖层沉积过程中溅射气体成分的作用。当溅射气体的分子量从Ar增加到Kr再增加到Xe时,Pt层的密度降低(从21到15g/cm3)在三层膜的镜面X射线反射率测量中是明显的。观察到对吉尔伯特阻尼和界面DMI能量的显著影响,阻尼从0.037(1)增加到0.042(1)到0.048(1),界面DMI从0.47(4)mJ/m2减少到0.45(5)mJ/m2-0.39(4)m J/m2。通过明智的界面控制来控制这些材料的垂直磁化和DMI强度的能力是实现在较小横向尺寸下具有更好稳定性的磁性器件的一种手段,这是自旋电子器件阵列器件缩放的关键。
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引用次数: 0
Mean-Field Modeling of Magnetocaloric Effect of Antiferromagnetic Compounds 反铁磁性化合物磁热效应的平均场模型
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2022-12-05 DOI: 10.1109/LMAG.2022.3226918
B. P. Alho;P. O. Ribeiro;R. S. de Oliveira;V. S. R. de Sousa;E. P. Nóbrega;B. C. Margato;J. M. N. da Silva;P. J. von Ranke
Antiferromagnetic compounds are known in the literature to present the inverse magnetocaloric effect (MCE). This effect is characterized by the negative adiabatic temperature change $Delta {T}_S$ of an antiferromagnetic material when submitted to an applied magnetic field. In an isothermal process, a positive entropy change $Delta {S}_T$ is also expected. More recently, the anisotropic character of antiferromagnetic compounds, due to spin-flop and spin-flip transitions, has been pointed out, highlighting the applicability of the antiferromagnetic compounds in a rotary magnetocaloric device. In this work, we systematically investigated a mean-field model that describes the antiferromagnetic behavior of materials in a multisublattice approach. Our model includes the nearest and next-nearest neighbor exchange interaction, the Zeeman effect, and uniaxial anisotropy energy. We investigated the effect of anisotropy on the spin-flop and spin-flip transitions on the usual and anisotropic MCE. We also demonstrated and verified an area rule for $ - {rm{Delta }}{S}_T$ versus T curves that can be used on compounds where the saturation magnetization is magnetic field dependent.
反铁磁性化合物在文献中已知具有反磁热效应(MCE)。这种效应的特点是负绝热温度变化$Delta{T}_S反铁磁性材料在施加磁场时的$。在等温过程中,正熵变化$Delta{S}_T预计还会有美元。最近,由于自旋翻转和自旋翻转跃迁,反铁磁性化合物的各向异性特性已经被指出,这突出了反铁磁化合物在旋转磁热器件中的适用性。在这项工作中,我们系统地研究了一个平均场模型,该模型以多元结构的方法描述了材料的反铁磁行为。我们的模型包括最近邻和次近邻交换相互作用、塞曼效应和单轴各向异性能量。我们研究了各向异性对自旋翻转和自旋翻转跃迁的影响。我们还演示并验证了$-{rm{Delta}}的区域规则{S}_T$对T曲线,可用于饱和磁化强度与磁场相关的化合物。
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引用次数: 1
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IEEE Magnetics Letters
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