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Antiferromagnetism in Two-Dimensional, 1T-Phase Iridium Oxide 二维 1T 相氧化铱中的反铁磁性
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-01-05 DOI: 10.1109/LMAG.2024.3350438
Charlie Jindrich;Qi Shao;Antonio Ruotolo
Theoretical studies show that metastable phases of nonmagnetic oxides could exhibit magnetic order when synthesized in two-dimensional (2-D) atomic crystals. In this letter, we report experimental evidence of a nontrivial antiferromagnetic behavior in a 2-D, metastable phase of iridium oxide in which iridium forms a triangular lattice. We compare the magnetic behavior of the crystals in the morphology of 2-D nanosheets with that of the same crystals in the morphology of nanoparticles. At low temperatures, the magnetic moment of nanosheets exceeds that of the nanoparticles while coercivity and remanence collapse, suggesting a transition to an antiferromagnetic phase. Morphology at the nanoscale seems to play a significant role in the magnetic behavior of oxide semiconductors.
理论研究表明,在二维(2-D)原子晶体中合成非磁性氧化物的逸散相时,可以表现出磁性秩序。在这封信中,我们报告了实验证据,证明氧化铱的二维可蜕变相具有非对称反铁磁行为,其中铱形成了三角形晶格。我们将二维纳米片形态晶体的磁行为与纳米颗粒形态晶体的磁行为进行了比较。在低温下,纳米片的磁矩超过了纳米颗粒的磁矩,同时矫顽力和剩磁坍缩,这表明纳米片过渡到了反铁磁相。纳米尺度的形态似乎在氧化物半导体的磁性行为中起着重要作用。
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引用次数: 0
Magnetic Field-Induced Phase Transition and Weak Ferromagnetism in Nonsuperconducting Optimally Doped PrBCO Cuprate 非超导最佳掺杂 PrBCO 铜酸盐中的磁场诱导相变和弱铁磁性
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-01-05 DOI: 10.1109/LMAG.2024.3350428
Mahieddine Lahoubi;Shengli Pu;Weinan Liu;Zhe Yang
In this letter, we report anomalous magnetic properties in high dc magnetic fields H up to 11 and 16 T from 1.35 up to 20 K on PrBa2Cu3O6.95 (PrBCO6.95) cuprate ceramic. Significant magnetic-field effects are revealed in the derivative of the magnetization M(T) versus T using two sets of values of H selected in the range of 2.5–9.5 T. Anomalies are observed at the low-critical point Tcr = 4–5 K, in the region of the spin reorientation phase transition temperature T2 = 10.5 K, and around the Néel temperature of the antiferromagnetic ordering of the Pr3+ sublattice TN = 14 K. Using Arrott plot analysis, we identified weak field-induced phase transitions at two critical fields, Hcr1(T) ∼ 3.3 T and Hcr2(T) ∼ 7.5 T, whose associated transition lines exhibit an almost temperature-independent behavior in the range 1.35 K-T2, and seem to vanish in the vicinity of TN. When T decreases from 20 K, an increase occurs in the derivative of the magnetization M(H) versus H for 0.5 T < H < 1 T, as well as in the differential susceptibility χd(T) versus T where a shape change occurs when crossing Tcr. The spontaneous magnetization MS(T), which was deduced by extrapolation to zero-field from the field-linear regime up to 2 T, shows an inverse variation with T and a shape change when crossing TN and T2. These features, which are taken as evidence for an additional weak ferromagnetic-like component that survives above TN, result from the significant role of the Pr-Cu(2) magnetic coupling.
在这封信中,我们报告了 PrBa2Cu3O6.95 (PrBCO6.95) 铜氧化物陶瓷在 1.35 至 20 K 高直流磁场 H 达 11 和 16 T 时的异常磁性能。在低临界点 Tcr = 4-5 K、自旋重新定向相变温度 T2 = 10.利用阿罗特图分析,我们确定了在两个临界场 Hcr1(T) ∼ 3.3 T 和 Hcr2(T) ∼ 7.5 T 处的弱场诱导相变,其相关的过渡线在 1.35 K-T2 范围内表现出几乎与温度无关的行为,并且似乎在 TN 附近消失。当 T 从 20 K 开始降低时,磁化 M(H) 相对于 H 的导数(0.5 T < H < 1 T)以及相对于 T 的差分磁感应强度 χd(T)都会增加。自发磁化 MS(T) 是通过从场-线性机制推断出的零场,最高可达 2 T,显示出随 T 的反向变化,以及在跨越 TN 和 T2 时的形状变化。这些特征被认为是在 TN 以上存在一个额外的弱铁磁样成分的证据,是 Pr-Cu(2) 磁耦合的重要作用所致。
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引用次数: 0
Microstructure Evolution and First-Order Reversal Curve Analysis of the Interphase Coupling in SmCo Thick Film 钐钴厚膜中相间耦合的微观结构演变和一阶反转曲线分析
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-18 DOI: 10.1109/LMAG.2023.3344026
Oksana Koplak;Federico Maspero;Alejandro Plaza;Andrea Del Giacco;Maria Cocconcelli;Riccardo Bertacco
Thick SmCo films of 500 nm thickness were deposited by radio frequency sputtering in W/SmCo/W structures on a Si substrate. After annealing at 650–750 °C, the as-grown soft amorphous structure transforms into a mixture of crystalline Sm2Co17 and SmCo5 hard magnetic phases. Annealing at 650 °C leads to film crystallization with an average grain size of 64 nm, coercivity of 0.5 T, and remanence magnetization of about 0.5 T for a maximum applied field of 2 T. The remanence magnetization decreases by 20% upon annealing at 750 °C, whereas the average crystalline size and coercivity increase up to 73 nm and 1.1 T, respectively. Series of the first-order reversal curves recorded in the samples that were annealed at 650 °C and 750 °C demonstrate redistribution of the switching fields between the softer (Sm2Co17) and harder (SmCo5) phases, depending on the strength of interphase interaction. Overall, the higher remanence and sizable coercivity of films annealed at 650 °C make them good candidates for the fabrication of micromagnets to be integrated in microelectromechanical systems.
通过射频溅射法在硅衬底上沉积了 W/SmCo/W 结构的 500 nm 厚钐钴薄膜。在 650-750 °C 退火后,生长的软质无定形结构转变为结晶 Sm2Co17 和 SmCo5 硬磁相的混合物。在 650 °C 退火后,薄膜结晶,平均晶粒大小为 64 nm,矫顽力为 0.5 T,在最大外加磁场为 2 T 时,剩磁约为 0.5 T;在 750 °C 退火后,剩磁降低了 20%,而平均晶粒大小和矫顽力则分别增加到 73 nm 和 1.1 T。在 650 ℃ 和 750 ℃ 下退火的样品记录的一阶反转曲线系列表明,开关场在较软(Sm2Co17)和较硬(SmCo5)相之间重新分布,这取决于相间相互作用的强度。总之,在 650 ℃ 下退火的薄膜具有较高的剩磁和相当大的矫顽力,是制造集成到微机电系统中的微型磁体的理想材料。
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引用次数: 0
Spin Transport and Magnetic Proximity Effect in CoFeB/Normal Metal/Pt Trilayers CoFeB/ 正常金属/铂三层膜中的自旋传输和磁接近效应
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-12-06 DOI: 10.1109/LMAG.2023.3340122
Simon Häuser;Matthias R. Schweizer;Sascha Keller;Andres Conca;Moritz Hofherr;Evangelos Papaioannou;Benjamin Stadtmüller;Burkard Hillebrands;Martin Aeschlimann;Mathias Weiler
We present a study of the damping and spin pumping properties of CoFeB/X/Pt systems with $rm X=Al,Cr$, and $rm Ta$. We show that the total damping of the CoFeB/Pt systems is strongly reduced when an interlayer is introduced independently of the material. Using a model that considers spin relaxation, we identify the origin of this contribution in the magnetically polarized Pt formed by the magnetic proximity effect (MPE), which is suppressed by the introduction of the interlayer. The induced ferromagnetic order in the Pt layer is confirmed by element-sensitive transverse magneto-optical Kerr spectroscopy at the M$_{2,3}$ and N$_{7}$ absorption edges. We discuss the impact of the MPE on parameter extraction in the spin transport model.
我们介绍了对具有 $rm X=Al,Cr$ 和 $rm Ta$ 的 CoFeB/X/Pt 系统的阻尼和自旋泵特性的研究。我们的研究表明,当引入独立于材料的夹层时,CoFeB/Pt 系统的总阻尼会大大降低。通过使用一个考虑自旋弛豫的模型,我们确定了由磁接近效应(MPE)形成的磁极化铂中这一贡献的来源,而引入中间膜后,磁接近效应被抑制。在 M$_{2,3}$ 和 N$_7$ 吸收边作为元素敏感探针的横向磁光 Kerr 光谱证实了铂层中的诱导铁磁秩序。我们讨论了 MPE 对自旋输运模型参数提取的影响。
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引用次数: 0
A Numerical Method to Determine Demagnetization Factors of Stadium-Shaped Nanoislands for Artificial Spin Ices 确定人工自旋冰体育场形纳米岛退磁系数的数值方法
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-11-20 DOI: 10.1109/LMAG.2023.3334670
Victoria Martinez;Ezio Iacocca
The shape of nanoislands gives rise to a demagnetizing field that is primarily responsible for the orientation of the magnetization along an axis. In the context of magnetization dynamics, the demagnetization (demag) field also determines the resonant frequencies captured by Kittel's equations. Analytically, we require demag factors that can be obtained exactly for a few geometries, including ellipsoids and prisms. However, analytical expressions are not available for other shapes, limiting the use of Kittel's equation as a predictive model. Here, we present a method to obtain the demag factors from micromagnetic simulations with good accuracy. Similar to other experiments, ferromagnetic resonance was obtained, but we use orthogonal field conditions to fit Kittel's equation unambiguously and obtain the demag factors with good accuracy. This method will be useful to determine demag factors under the ellipsoidal approximation for stadium-shaped nanoislands used in artificial spin ices and thus lead to a better prediction in their ferromagnetic resonance and band structures.
纳米岛的形状会产生去磁场,而去磁场是磁化沿轴定向的主要原因。在磁化动力学的背景下,去磁(demag)场也决定了基特尔方程所捕捉到的共振频率。从分析角度看,我们需要去磁因子,这些因子可以精确地从包括椭圆体和棱柱体在内的一些几何图形中获得。然而,对于其他形状,我们无法获得分析表达式,从而限制了基特尔方程作为预测模型的使用。在这里,我们提出了一种从微磁模拟中精确获得德马格因子的方法。与其他实验类似,我们也获得了铁磁共振,但我们使用了正交场条件来明确拟合 Kittel 方程,并准确地获得了去磁因子。这种方法将有助于在椭球近似条件下确定人工自旋冰中使用的体育场形纳米岛的去磁因子,从而更好地预测其铁磁共振和带状结构。
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引用次数: 0
A High-Sensitivity Composite Probe Capable of Simultaneously Measuring Electric- and Magnetic-Field Components 能够同时测量电场和磁场成分的高灵敏度复合探头
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-13 DOI: 10.1109/LMAG.2023.3324517
Lei Wang;Duan Nie;Liye Cheng;Hongyue Wang
This letter presents a high-sensitivity composite probe capable of simultaneously measuring electric- and magnetic-field components. The composite probe contains a U-shaped loop, two parasitic long loops, and a pair of strip lines as a transmission part. First, the U-shaped loop is designed to test both electric and magnetic fields. Second, two parasitic long loops are placed at both sides of the U-shaped loop to increase the sensitivity. Third, to characterize and calibrate the probe, a standard microstrip line is manufactured and used. Finally, the developed probe is printed and tested to prove the feasibility of the design. The tested results indicate that the probe can not only simultaneously test electric and magnetic fields, but also have a wider working bandwidth and higher sensitivity.
这封信介绍了一种能够同时测量电场和磁场分量的高灵敏度复合探针。该复合探头包含一个 U 形环、两个寄生长环和一对作为传输部分的带状线。首先,U 型环设计用于测试电场和磁场。其次,在 U 型环的两侧设置了两个寄生长环,以提高灵敏度。第三,为了鉴定和校准探头,制造并使用了标准微带线。最后,对开发的探头进行打印和测试,以证明设计的可行性。测试结果表明,该探针不仅可以同时测试电场和磁场,而且具有更宽的工作带宽和更高的灵敏度。
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引用次数: 0
Materials Informatics for the Development and Discovery of Future Magnetic Materials 面向未来磁性材料开发与发现的材料信息学
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-29 DOI: 10.1109/LMAG.2023.3320888
Ryotaro Okabe;Mingda Li;Yuma Iwasaki;Nicolas Regnault;Claudia Felser;Masafumi Shirai;Alexander Kovacs;Thomas Schrefl;Atsufumi Hirohata
This letter summarizes the recent development of magnetic materials search using artificial intelligence (AI) and machine learning (ML) and briefly introduces ML and AI approaches to materials discovery. The authors offer a flowchart to aid the selection of relevant approaches for their material search. This letter also covers the authors' recent research activities in magnetism and quantum materials, including topological materials, Heusler alloys, interfaces, and permanent magnets. This overview is based on a recent symposium at IEEE Intermag 2023.
这封信总结了使用人工智能(AI)和机器学习(ML)的磁性材料搜索的最新发展,并简要介绍了ML和AI的材料发现方法。作者提供了一个流程图,以帮助选择相关的方法为他们的材料搜索。这封信还涵盖了作者最近在磁性和量子材料方面的研究活动,包括拓扑材料,Heusler合金,界面和永磁体。这篇综述是基于IEEE Intermag 2023最近的一次研讨会。
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引用次数: 0
Fabrication and Characterization CoZrO Films Deposited by Facing Targets Reactive Sputtering for Micromagnetic Inductors 微磁电感器用面靶反应溅射沉积CoZrO薄膜的制备与表征
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-28 DOI: 10.1109/LMAG.2023.3320495
Honami Nitta;Yota Takamura;Tadayuki Kaneko;Shigeki Nakagawa
In recent years, there has been a strong demand for soft magnetic films suitable for high-frequency micromagnetic devices as power electronics circuits to operate at higher frequencies. Specifically, there is a need for magnetic thin films with ferromagnetic resonance frequencies (fr) in the range of several gigahertz. Nanogranular CoZrO thin films have emerged as promising candidates due to their high fr and high electrical resistivity. We fabricated CoZrO thin films using facing targets reactive sputtering with oxygen as the reactive gas. As the oxygen partial pressure ratio (PO2) was gradually increased up to 0.8%, clear uniaxial magnetic anisotropy appeared, leading to improved soft magnetic properties. At a PO2 of 0.8%, the film exhibited the most superior soft magnetic properties. With further increase in PO2, magnetic loops implying a stripe magnetic-domain structure were obtained. In this PO2 range, phase separation was observed, along with a sharp increase in electrical resistivity. fr of the CoZrO film formed at PO2 = 0.8% was determined to be 3.2 GHz from high-frequency permeability measurement. We have confirmed the effectiveness of facing targets’ reactive sputtering in preparing CoZrO films with excellent soft magnetic properties.
近年来,对适合高频微磁器件作为电力电子电路在更高频率下工作的软磁薄膜的需求很大。具体地说,需要铁磁共振频率(fr)在几兆赫兹范围内的磁性薄膜。纳米颗粒CoZrO薄膜由于其高电阻率和高电阻率而成为有希望的候选材料。以氧为反应气体,采用面靶反应溅射法制备了CoZrO薄膜。随着氧分压比(PO2)逐渐增大至0.8%,出现了明显的单轴磁各向异性,软磁性能得到改善。在PO2为0.8%时,薄膜表现出最优异的软磁性能。随着PO2的进一步增加,得到了具有条形磁畴结构的磁环。在这个PO2范围内,观察到相分离,以及电阻率的急剧增加。在PO2 = 0.8%时形成的CoZrO膜,通过高频磁导率测量确定为3.2 GHz。我们已经证实了面对目标的反应溅射在制备具有优异软磁性能的CoZrO薄膜中的有效性。
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引用次数: 0
Increasing Flips per Second and Speed of p-Computers by Using Dilute Magnetic Semiconductors 利用稀磁半导体提高p计算机的每秒翻转次数和速度
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-27 DOI: 10.1109/LMAG.2023.3319992
Rahnuma Rahman;Supriyo Bandyopadhyay
Probabilistic computing with binary stochastic neurons (BSNs) implemented with low-barrier magnets (LBMs) or zero-energy barrier nanoscale ferromagnets possessing in-plane magnetic anisotropy has emerged as an efficient paradigm for solving computationally hard problems. The fluctuating magnetization of an LBM at room temperature encodes a p-bit, which is the building block of a BSN. Its drawback, however, is that the dynamics of common (transition metal) ferromagnets are relatively slow, and, hence, the number of uncorrelated p-bits that can be generated per second—the so-called “flips per second” (fps)—is insufficient, leading to slow computational speed in autonomous coprocessing with p-computers. Here, we show that a simple way to increase fps in LBMs is to replace commonly used ferromagnets (e.g., Co, Fe, and Ni), which have large saturation magnetization Ms, with a dilute magnetic semiconductor, such as GaMnAs with much smaller saturation magnetization. The smaller Ms reduces any residual energy barrier within an LBM and increases the fps significantly. It also offers other benefits, such as reduced dipole coupling between neighbors, resulting in larger density of uncorrelated p-bits for more processing power, and reduced device-to-device variation. All this provides a way to realize the hardware acceleration and energy efficiency promise of p-computers.
用具有平面内磁各向异性的低势垒磁体(LBM)或零能垒纳米级铁磁体实现的二进制随机神经元(BSN)的概率计算已成为解决计算难题的有效范例。LBM在室温下的波动磁化编码p位,这是BSN的构建块。然而,它的缺点是,普通(过渡金属)铁磁体的动力学相对较慢,因此,每秒可生成的不相关p位的数量——即所谓的“每秒翻转次数”(fps)——不足,导致与p计算机的自主协处理计算速度较慢。在这里,我们表明,增加LBM中fps的一个简单方法是用稀释的磁性半导体(如饱和磁化强度小得多的GaMnAs)代替具有大饱和磁化强度Ms的常用铁磁体(如Co、Fe和Ni)。较小的Ms减少了LBM内的任何残余能垒,并显著提高了fps。它还提供了其他好处,例如减少了邻居之间的偶极耦合,导致更大密度的不相关p位以获得更高的处理能力,并减少了设备间的变化。所有这些都为实现p型计算机的硬件加速和能效承诺提供了一种途径。
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引用次数: 0
Investigation of the Soft-Magnetic Properties of CoZrTaB Laminated Cores by Dielectric Layer Tuning 介电层调谐法研究CoZrTaB叠层磁芯的软磁性能
IF 1.2 4区 物理与天体物理 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-26 DOI: 10.1109/LMAG.2023.3319289
Guannan Wei;Rajasree Das;Daniel Lordan;Marek Lorenc;Barry Clark;David P. F. Hurley;Mike Hayes;Cian O'Mathuna;Ranajit Sai;Paul McCloskey
Soft magnetic properties of thin films for use as a core material are critical for the realization of future miniaturized electromagnetic devices operating at frequencies of tens or hundreds of megahertz. Laminated stacks consisting of alternate thin layers of magnetic material and dielectric material are widely used to suppress eddy current losses that dominate, especially at a higher frequency of operation. Thus, identifying a suitable dielectric layer, its optimum thickness, and the understanding of its effect on the performance of the laminated core is important. In this letter, six different CoZrTaB (CZTB) laminated cores are reported, featuring a variety of dielectric materials (AlN, SiN, Al2O3, and oxide CZTB) and/or dielectric thickness (5, 15, and 50 nm). This study shows that stacks with different dielectric materials have a varied residual stress that plays an important role in inducing magnetic anisotropy, thus affecting the permeability. CZTB stacks with oxide CZTB dielectric show the best combination of high permeability, low coercivity, and low losses at high frequency.
用作核心材料的薄膜的软磁特性对于实现未来在数十或数百兆赫频率下工作的小型化电磁器件至关重要。由磁性材料和介电材料的交替薄层组成的叠层堆叠被广泛用于抑制占主导地位的涡流损耗,尤其是在较高的操作频率下。因此,确定合适的介电层、其最佳厚度以及了解其对叠层芯性能的影响是重要的。在这封信中,报道了六种不同的CoZrTaB(CZTB)叠层芯,其特征是各种介电材料(AlN、SiN、Al2O3和氧化物CZTB)和/或介电厚度(5、15和50nm)。这项研究表明,具有不同介电材料的叠层具有不同的残余应力,这在诱导磁各向异性方面起着重要作用,从而影响磁导率。具有氧化物CZTB电介质的CZTB叠层在高频下表现出高磁导率、低矫顽力和低损耗的最佳组合。
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引用次数: 0
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IEEE Magnetics Letters
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