Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3182868
A. Tamayo-Domínguez, P. Sánchez-Olivares, A. Camacho-Hernandez, J. Fernández-González
This letter details the metallization process of 3-D-printed WR-28 and WR-10 waveguides using electroplating. The 3-D printing technique is stereolithography, so the printed parts are plastic-based. A two-step metallization process is followed: a premetallization with nickel spray to make the part conductive and a subsequent electroplating process, emphasizing the chemical compounds and quantities needed to improve the result obtained, as well as the metallization times and currents applied on the parts. In addition, manufacturing deviations are measured and compensated. The results obtained are compared with simulations and commercial waveguide sections. Measurements show $S_{11}$ below −33 and −21 dB for WR-28 and WR-10, respectively. Measured average losses are around 1 dB/m for WR-28 and 4 dB/m for WR-10, which is equivalent to copper with an effective surface roughness lower than $0.4~mu text{m}$ .
{"title":"Guidelines for Accurate in-House Electroplating and 3-D-Printing Processes Applied to mm-Wave Devices","authors":"A. Tamayo-Domínguez, P. Sánchez-Olivares, A. Camacho-Hernandez, J. Fernández-González","doi":"10.1109/LMWC.2022.3182868","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182868","url":null,"abstract":"This letter details the metallization process of 3-D-printed WR-28 and WR-10 waveguides using electroplating. The 3-D printing technique is stereolithography, so the printed parts are plastic-based. A two-step metallization process is followed: a premetallization with nickel spray to make the part conductive and a subsequent electroplating process, emphasizing the chemical compounds and quantities needed to improve the result obtained, as well as the metallization times and currents applied on the parts. In addition, manufacturing deviations are measured and compensated. The results obtained are compared with simulations and commercial waveguide sections. Measurements show <inline-formula> <tex-math notation=\"LaTeX\">$S_{11}$ </tex-math></inline-formula> below −33 and −21 dB for WR-28 and WR-10, respectively. Measured average losses are around 1 dB/m for WR-28 and 4 dB/m for WR-10, which is equivalent to copper with an effective surface roughness lower than <inline-formula> <tex-math notation=\"LaTeX\">$0.4~mu text{m}$ </tex-math></inline-formula>.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1267-1270"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46674747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3187781
Lucas Polo‐López, S. Sirci, Antoine Calleau, S. Capdevila, G. Toso, E. Menargues, M. García-Vigueras
This work presents a new topology of evanescent mode filter (EMF) that allows for its efficient additive manufacturing (AM). Chamfered ridges which avoid the appearance of undesired supports when printed vertically (i.e., along the propagation axis of the filter) are considered. This strategy ensures accurate tolerances, reduced cost and it also enables monolithic manufacturing of the EMF as part of a feed chain. A circuit model is developed to explain the behavior of the new ridges as well as to speed up the overall filter design. The proposed concept and methodology are validated experimentally through the manufacturing and measurement of a prototype.
{"title":"Vertically Printable Evanescent Mode Filters","authors":"Lucas Polo‐López, S. Sirci, Antoine Calleau, S. Capdevila, G. Toso, E. Menargues, M. García-Vigueras","doi":"10.1109/LMWC.2022.3187781","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3187781","url":null,"abstract":"This work presents a new topology of evanescent mode filter (EMF) that allows for its efficient additive manufacturing (AM). Chamfered ridges which avoid the appearance of undesired supports when printed vertically (i.e., along the propagation axis of the filter) are considered. This strategy ensures accurate tolerances, reduced cost and it also enables monolithic manufacturing of the EMF as part of a feed chain. A circuit model is developed to explain the behavior of the new ridges as well as to speed up the overall filter design. The proposed concept and methodology are validated experimentally through the manufacturing and measurement of a prototype.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1299-1302"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45126806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3178377
Xing Li, Li Xu, Zhongkun Yang, Bin Li
For time-domain electromagnetics, the choice of time scheme is very pivotal. Usually, an explicit time scheme has the stability constraint on small grid size. Though the implicit time scheme is unconditionally stable, it has a necessary expense of computing the global system at each time iteration. To alleviate the expensive computational cost, a new explicit-implicit hybridizable discontinuous Galerkin time-domain method that combines the explicit DGTD (exDGTD) method and our former imHDGTD method will be proposed for the first time. Here let’s call it exDGTD-imHDGTD (ex-imHDGTD). This letter gives its implementation, including a new transmission condition. Unlike the traditional explicit–implicit methods, imHDGTD is used to replace traditional implicit algorithms for the refined region, which leads to a remarkable reduction of degrees of freedom (DOFs) and a better matrix solving ability. Numerical results show that the proposed ex–imHDGTD is very effective both on accuracy and performance.
{"title":"A New Explicit–Implicit Hybridizable Discontinuous Galerkin Time-Domain Method for Electromagnetics","authors":"Xing Li, Li Xu, Zhongkun Yang, Bin Li","doi":"10.1109/LMWC.2022.3178377","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178377","url":null,"abstract":"For time-domain electromagnetics, the choice of time scheme is very pivotal. Usually, an explicit time scheme has the stability constraint on small grid size. Though the implicit time scheme is unconditionally stable, it has a necessary expense of computing the global system at each time iteration. To alleviate the expensive computational cost, a new explicit-implicit hybridizable discontinuous Galerkin time-domain method that combines the explicit DGTD (exDGTD) method and our former imHDGTD method will be proposed for the first time. Here let’s call it exDGTD-imHDGTD (ex-imHDGTD). This letter gives its implementation, including a new transmission condition. Unlike the traditional explicit–implicit methods, imHDGTD is used to replace traditional implicit algorithms for the refined region, which leads to a remarkable reduction of degrees of freedom (DOFs) and a better matrix solving ability. Numerical results show that the proposed ex–imHDGTD is very effective both on accuracy and performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1263-1266"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49404782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a low-cost third-harmonic mixer suitable for ${W}$ -band retrodirective systems. Measured results show that when fixing the local oscillator (LO) frequency at 35 GHz, the conversion loss (CL) below 11 dB is achieved over the radio frequency (RF) range of 100–110 GHz with intermediate frequency (IF) from dc to 5 GHz, while for the RF range of 108 GHz, the minimum CL of 6.8 dB is obtained. Therefore, the presented mixer exhibits an excellent performance with low CL in comparison with that of a normal subharmonic mixer (SHM). The isolations of RF/LO and RF/IF are improved to the level of 35 and 38 dB, respectively. The simulated and measured isolations of LO/RF are 41 and 37 dB, respectively. This mixer has properties of low LO frequencies, high isolations, and low CL; therefore, it provides a high-performance and low-cost alternative solution for the applications of retrodirective systems.
{"title":"Low-Cost Third-Harmonic Mixer for -Band Retrodirective System Applications","authors":"Jiang-jie Zeng, X. Lin, Yihong Su, Yong Yang, Peng Mei, Zhongbo Zhu","doi":"10.1109/LMWC.2022.3184627","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3184627","url":null,"abstract":"This letter presents a low-cost third-harmonic mixer suitable for ${W}$ -band retrodirective systems. Measured results show that when fixing the local oscillator (LO) frequency at 35 GHz, the conversion loss (CL) below 11 dB is achieved over the radio frequency (RF) range of 100–110 GHz with intermediate frequency (IF) from dc to 5 GHz, while for the RF range of 108 GHz, the minimum CL of 6.8 dB is obtained. Therefore, the presented mixer exhibits an excellent performance with low CL in comparison with that of a normal subharmonic mixer (SHM). The isolations of RF/LO and RF/IF are improved to the level of 35 and 38 dB, respectively. The simulated and measured isolations of LO/RF are 41 and 37 dB, respectively. This mixer has properties of low LO frequencies, high isolations, and low CL; therefore, it provides a high-performance and low-cost alternative solution for the applications of retrodirective systems.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1323-1326"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42493006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3178916
Farhad Bozorgi, Elham Rahimi, Mengqi Cui, P. Sen
In this work, a voltage-controlled oscillator (VCO) in the $K$ -band has been introduced that uses the proposed technique named “inductive source degeneration of the tail current source.” The contribution of this work is that the auxiliary resonator is placed differently than the conventional works so that it leads to a more compact solution without affecting the phase noise (PN). Based on the simulation results, for the same device sizes and power consumption, the proposed Class-B method reduces the PN by 1.5 dB than the conventional one at 1 MHz offset from 24 GHz center frequency. VCO has been fabricated on a die area of 0.026 mm2 in the 22 nm fully depleted silicon on insulator (FD-SOI) technology. The measurement was done in the free-running mode, and the results show a PN of −122.4 dBc/Hz at 10 MHz offset from the center frequency of 23.8 GHz. The power consumption of the VCO core is 14.4 mW with 1 V supply voltage. According to the measurement results, this work achieves ${text {FoM}_{A}}$ , a figure of merit which considers the VCO core area, of −194.2 dBc/Hz at 10 MHz offset from the center frequency, featuring state-of-the-art among the CMOS VCOs in the $K$ -band.
{"title":"-Band Class-B VCO in 22 nm FD-SOI With Inductive Source Degeneration of the Tail Current Source","authors":"Farhad Bozorgi, Elham Rahimi, Mengqi Cui, P. Sen","doi":"10.1109/LMWC.2022.3178916","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178916","url":null,"abstract":"In this work, a voltage-controlled oscillator (VCO) in the <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band has been introduced that uses the proposed technique named “inductive source degeneration of the tail current source.” The contribution of this work is that the auxiliary resonator is placed differently than the conventional works so that it leads to a more compact solution without affecting the phase noise (PN). Based on the simulation results, for the same device sizes and power consumption, the proposed Class-B method reduces the PN by 1.5 dB than the conventional one at 1 MHz offset from 24 GHz center frequency. VCO has been fabricated on a die area of 0.026 mm2 in the 22 nm fully depleted silicon on insulator (FD-SOI) technology. The measurement was done in the free-running mode, and the results show a PN of −122.4 dBc/Hz at 10 MHz offset from the center frequency of 23.8 GHz. The power consumption of the VCO core is 14.4 mW with 1 V supply voltage. According to the measurement results, this work achieves <inline-formula> <tex-math notation=\"LaTeX\">${text {FoM}_{A}}$ </tex-math></inline-formula>, a figure of merit which considers the VCO core area, of −194.2 dBc/Hz at 10 MHz offset from the center frequency, featuring state-of-the-art among the CMOS VCOs in the <inline-formula> <tex-math notation=\"LaTeX\">$K$ </tex-math></inline-formula>-band.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1351-1354"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41774800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3177897
Bo Zhang, Yong Zhang, Fei Xiao
This letter presents a broadband 90° bent waveguide transition that is suitable for the $H$ -plane split-blocks technique. In this transition, imperfect metal connections will not cause unacceptable transmission loss by employing a novel U-shaped choke groove and a groove gap waveguide. Such contactless waveguide transitions are advantageous as they allow for easy interconnection and packaging of millimeter-wave and terahertz circuitry. A 90° bent waveguide operating over the WR-4.3 waveguide frequency band (170–260 GHz) is designed, and the transition with a different air gap between the top and bottom parts is measured. The measured results show that the transmission losses are about 0.2 dB with good consistency.
{"title":"Broadband Contactless 90° Waveguide Transition With a U-Shaped Choke Groove","authors":"Bo Zhang, Yong Zhang, Fei Xiao","doi":"10.1109/LMWC.2022.3177897","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3177897","url":null,"abstract":"This letter presents a broadband 90° bent waveguide transition that is suitable for the $H$ -plane split-blocks technique. In this transition, imperfect metal connections will not cause unacceptable transmission loss by employing a novel U-shaped choke groove and a groove gap waveguide. Such contactless waveguide transitions are advantageous as they allow for easy interconnection and packaging of millimeter-wave and terahertz circuitry. A 90° bent waveguide operating over the WR-4.3 waveguide frequency band (170–260 GHz) is designed, and the transition with a different air gap between the top and bottom parts is measured. The measured results show that the transmission losses are about 0.2 dB with good consistency.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1279-1282"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49300483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3187998
Hui Wang, J. Nan, Mifang Cong, Jianwei Ren
This letter proposes a multifrequency impedance matching broadband power amplifier (PA) design, which is different from the traditional PA impedance value changes with the change in the operating frequency. This method selects the impedance value of the transistor device through the load–pulling system. Then, matching networks composed of a cascade of microstrip lines are used to match the device impedance to 50 $Omega $ . The matching networks are optimized to provide the desired impedance transfer characteristic at multiple frequencies. This design approach effectively reduces the amplifiers’ output impedance variation over the covered frequency range. The overall structure of the PA is simple, and the bandwidth is expanded while ensuring performance. Based on this method, a broadband PA was designed and fabricated using the self-developed laterally-diffused metal-oxide semiconductor (LDMOS) transistor of the Institute of Microelectronics of the Chinese Academy of Sciences. The measurement results show that the saturated output power of the designed PA in the range of 0.5–2.3 GHz is greater than 41 dBm. The drain efficiency is 43.62%–55.38%. When the average output power is 34.3 dBm, the adjacent channel leakage ratio (ACLR) is also better than −31.58 dBc.
{"title":"A Broadband Power Amplifier With Multifrequency Impedance Matching","authors":"Hui Wang, J. Nan, Mifang Cong, Jianwei Ren","doi":"10.1109/LMWC.2022.3187998","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3187998","url":null,"abstract":"This letter proposes a multifrequency impedance matching broadband power amplifier (PA) design, which is different from the traditional PA impedance value changes with the change in the operating frequency. This method selects the impedance value of the transistor device through the load–pulling system. Then, matching networks composed of a cascade of microstrip lines are used to match the device impedance to 50 $Omega $ . The matching networks are optimized to provide the desired impedance transfer characteristic at multiple frequencies. This design approach effectively reduces the amplifiers’ output impedance variation over the covered frequency range. The overall structure of the PA is simple, and the bandwidth is expanded while ensuring performance. Based on this method, a broadband PA was designed and fabricated using the self-developed laterally-diffused metal-oxide semiconductor (LDMOS) transistor of the Institute of Microelectronics of the Chinese Academy of Sciences. The measurement results show that the saturated output power of the designed PA in the range of 0.5–2.3 GHz is greater than 41 dBm. The drain efficiency is 43.62%–55.38%. When the average output power is 34.3 dBm, the adjacent channel leakage ratio (ACLR) is also better than −31.58 dBc.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1339-1342"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41630884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3177252
Cheng Guo, Xiaozhu Wen, Zixian Wu, Yang Yu, Wenxuan Wu, A. Zhang, Xubo Song, S. Liang, Zhihong Feng
This letter presents a 135–150 GHz high-efficiency and -power Schottky diode-based tripler integrated with low-loss waveguide filtering matching network. The active diode monolithic microwave integrated circuit (MMIC) is matched with two waveguide filters based on coupling matrix theory for a two-port network with complex impedance terminations. The filters and the active diode MMIC are integrated via the microstrip-to-waveguide transition, allowing a compact design on the relatively higher loss MMIC. In addition, an integrated on-chip capacitor is implemented to isolate dc and RF paths. The measurement shows that with 150–200 mW input power, the maximum conversion efficiency reaches 30.5% and the maximum output power is 47 mW. All filtering poles can be observed in measurements and the return loss achieves 10–15 dB within the passband. Good agreements between measurements and simulations demonstrate the validity of the design approach.
{"title":"A 135–150 GHz High-Power Frequency Tripler With Filtering Matching Network","authors":"Cheng Guo, Xiaozhu Wen, Zixian Wu, Yang Yu, Wenxuan Wu, A. Zhang, Xubo Song, S. Liang, Zhihong Feng","doi":"10.1109/LMWC.2022.3177252","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3177252","url":null,"abstract":"This letter presents a 135–150 GHz high-efficiency and -power Schottky diode-based tripler integrated with low-loss waveguide filtering matching network. The active diode monolithic microwave integrated circuit (MMIC) is matched with two waveguide filters based on coupling matrix theory for a two-port network with complex impedance terminations. The filters and the active diode MMIC are integrated via the microstrip-to-waveguide transition, allowing a compact design on the relatively higher loss MMIC. In addition, an integrated on-chip capacitor is implemented to isolate dc and RF paths. The measurement shows that with 150–200 mW input power, the maximum conversion efficiency reaches 30.5% and the maximum output power is 47 mW. All filtering poles can be observed in measurements and the return loss achieves 10–15 dB within the passband. Good agreements between measurements and simulations demonstrate the validity of the design approach.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1327-1330"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44648078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3182933
Anil Kumar Nayak, I. Filanovsky, K. Moez, A. Patnaik
The letter demonstrates a coaxial transmission line-to-substrate integrated waveguide (CT-SIW) transition using aperture-coupling approach. The method broadens the bandwidth (BW) and reduces the transition insertion loss (IL). Two coaxial line supports with apertures for coupling are attached at the ends of substrate integrated waveguide (SIW). The copper inlaid of the apertures increases coupling of the coaxial line to SIW and can be controlled by the aperture length and the length of the line wire put in the aperture. The transition was designed, fabricated, and experimentally evaluated. The transition provides the measured 10 dB return loss (RL) fractional BW (FBW) of 104.3%, and 15 dB RL (FBW) of 78.06%. The IL of 0.37 to 0.87 dB at 19.63–62.7 GHz frequency range was obtained. The measured results are well correlated with the simulated ones.
{"title":"A Broadband Coaxial Line-to-SIW Transition Using Aperture-Coupling Method","authors":"Anil Kumar Nayak, I. Filanovsky, K. Moez, A. Patnaik","doi":"10.1109/LMWC.2022.3182933","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182933","url":null,"abstract":"The letter demonstrates a coaxial transmission line-to-substrate integrated waveguide (CT-SIW) transition using aperture-coupling approach. The method broadens the bandwidth (BW) and reduces the transition insertion loss (IL). Two coaxial line supports with apertures for coupling are attached at the ends of substrate integrated waveguide (SIW). The copper inlaid of the apertures increases coupling of the coaxial line to SIW and can be controlled by the aperture length and the length of the line wire put in the aperture. The transition was designed, fabricated, and experimentally evaluated. The transition provides the measured 10 dB return loss (RL) fractional BW (FBW) of 104.3%, and 15 dB RL (FBW) of 78.06%. The IL of 0.37 to 0.87 dB at 19.63–62.7 GHz frequency range was obtained. The measured results are well correlated with the simulated ones.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1271-1274"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49349743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3179927
Yojanes Rodríguez-Velásquez, R. Murphy‐Arteaga, R. Torres‐Torres
A full characterization and modeling methodology for the electrical transitions introduced by coaxial connectors serving as interfaces for accessing microstrip (MS) lines is presented and verified up to 40 GHz. The associated two-port network parameters are obtained from measurements performed on MS lines of different lengths. Subsequently, two circuit models for the transition are proposed and used to assess the performance of the connector transition as the lines vary in width.
{"title":"Modeling Microwave Connectors Used as Signal Launchers for Microstrip Lines of Different Widths","authors":"Yojanes Rodríguez-Velásquez, R. Murphy‐Arteaga, R. Torres‐Torres","doi":"10.1109/LMWC.2022.3179927","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3179927","url":null,"abstract":"A full characterization and modeling methodology for the electrical transitions introduced by coaxial connectors serving as interfaces for accessing microstrip (MS) lines is presented and verified up to 40 GHz. The associated two-port network parameters are obtained from measurements performed on MS lines of different lengths. Subsequently, two circuit models for the transition are proposed and used to assess the performance of the connector transition as the lines vary in width.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1295-1298"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46838911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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