Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3181204
Renlong Han, W. Qiao, Chengye Jiang, Lei Su, Guichen Yang, Jing-tao Tan, Falin Liu
In this letter, two basis function multiplexing-based behavioral modeling methods for digital predistortion (DPD) of RF power amplifiers (PAs) are proposed to reduce the running complexity of DPD. The proposed full basis-propagating selection (FBPS) model and reduced-complexity FBPS (RC-FBPS) model give two reasonable ways to multiplex even-order basis functions, extending the basis-propagating selection (BAPS) model which only uses basis function delay and odd-order basis functions. The experimental results confirm that both the proposed FBPS and RC-FBPS models can achieve a good tradeoff between running complexity and performance.
{"title":"A Low Running Complexity Model for Digital Predistortion of RF Power Amplifiers","authors":"Renlong Han, W. Qiao, Chengye Jiang, Lei Su, Guichen Yang, Jing-tao Tan, Falin Liu","doi":"10.1109/LMWC.2022.3181204","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3181204","url":null,"abstract":"In this letter, two basis function multiplexing-based behavioral modeling methods for digital predistortion (DPD) of RF power amplifiers (PAs) are proposed to reduce the running complexity of DPD. The proposed full basis-propagating selection (FBPS) model and reduced-complexity FBPS (RC-FBPS) model give two reasonable ways to multiplex even-order basis functions, extending the basis-propagating selection (BAPS) model which only uses basis function delay and odd-order basis functions. The experimental results confirm that both the proposed FBPS and RC-FBPS models can achieve a good tradeoff between running complexity and performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42534532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3189607
Vikas Chauhan, N. Collaert, P. Wambacq
This letter presents a $D$ -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors’ knowledge, this is the first 120–140-GHz LNA in the InP 250-nm HBT technology.
{"title":"A 120–140-GHz LNA in 250-nm InP HBT","authors":"Vikas Chauhan, N. Collaert, P. Wambacq","doi":"10.1109/LMWC.2022.3189607","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3189607","url":null,"abstract":"This letter presents a $D$ -band low-noise amplifier (LNA) in 250-nm InP HBT technology for the next-generation wireless applications. The LNA has a measured peak gain of 13 dB, a 3-dB bandwidth greater than 20 GHz (120–140 GHz), and a measured noise figure (NF) of less than 6 dB in the band. A reduction in the 3-dB bandwidth from simulation was observed during the measurements which was attributed to the substrate waves using full chip electromagnetic (EM) simulation. EM simulations show that a partial or complete removal of the back side metallization of the InP substrate, holes in metal-1 ground plane, or a strategic placement of through-substrate vias suppress these substrate waves. To the authors’ knowledge, this is the first 120–140-GHz LNA in the InP 250-nm HBT technology.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42561492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3178579
A. Sheldon, L. Belostotski
This letter presents a 0.9–1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2 ± 2.4 dB gain ($S_{21}$ ) with a noise temperature (figure) of 2.3 to 8.5 K (0.03 to 0.13 dB) and $| S_{11}| < -10$ dB.
{"title":"A Cryo-CMOS Low-Noise Amplifier With 2.3-to-8.5-K Noise Temperature at 20 K for Highly Integrated Radio-Astronomy Receivers","authors":"A. Sheldon, L. Belostotski","doi":"10.1109/LMWC.2022.3178579","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178579","url":null,"abstract":"This letter presents a 0.9–1.8-GHz cryo-CMOS low-noise amplifier (LNA) built-in standard 65-nm CMOS for highly integrated radio astronomy receivers. The measured cryogenic noise parameters confirm noise matching in the band and demonstrate that the LNA nears its minimum noise temperature at the desired frequency range. The proposed LNA operates at 20 K, consumes 115 mW of power, and provides a 37.2 ± 2.4 dB gain (<inline-formula> <tex-math notation=\"LaTeX\">$S_{21}$ </tex-math></inline-formula>) with a noise temperature (figure) of 2.3 to 8.5 K (0.03 to 0.13 dB) and <inline-formula> <tex-math notation=\"LaTeX\">$| S_{11}| < -10$ </tex-math></inline-formula> dB.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42646818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3186062
Xin Hu, Shubin Xie, Xin Ji, Xuming Chang, Yi Qiu, Bo Li, Zhijun Liu, Weidong Wang
Digital predistortion is widely used to compensate the nonlinear distortion of power amplifiers (PAs). Among the digital predistortion methods, the polynomial or deep neural networks (DNNs) models are only adopted with one specific state. When the operating conditions of PAs change, it is necessary to retrain and update the coefficients of the PA model. The generalization ability of the DNN models cannot be presented. To address this issue, this letter proposes one new modeling method that can build one generalized PA model with multiple states based on DNN. This method embeds a set of coding vectors representing corresponding states to build the generalized model. Compared with the traditional DNN model, experimental results show that the proposed method can construct the PA model containing multiple states while ensuring good modeling performance.
{"title":"Behavioral Model With Multiple States Based on Deep Neural Network for Power Amplifiers","authors":"Xin Hu, Shubin Xie, Xin Ji, Xuming Chang, Yi Qiu, Bo Li, Zhijun Liu, Weidong Wang","doi":"10.1109/LMWC.2022.3186062","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3186062","url":null,"abstract":"Digital predistortion is widely used to compensate the nonlinear distortion of power amplifiers (PAs). Among the digital predistortion methods, the polynomial or deep neural networks (DNNs) models are only adopted with one specific state. When the operating conditions of PAs change, it is necessary to retrain and update the coefficients of the PA model. The generalization ability of the DNN models cannot be presented. To address this issue, this letter proposes one new modeling method that can build one generalized PA model with multiple states based on DNN. This method embeds a set of coding vectors representing corresponding states to build the generalized model. Compared with the traditional DNN model, experimental results show that the proposed method can construct the PA model containing multiple states while ensuring good modeling performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48827000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An air-filled mode selective transmission line (AF-MSTL) consisting of an opened groove gap waveguide (GWG) and an inverted coplanar waveguide (CPW) is proposed in this letter. By using the electromagnetic band gap (EBG) structure, the electrical contacts of AF-MSTL are not required during the assembly process. To verify the design, the AF-MSTL prototype, connected to two designed grounded-CPW (GCPW) to AF-MSTL transitions to build a back-to-back structure, has been fabricated and measured. A measured insertion loss of 0.2857 dB/mm at 110 GHz is achieved, which is lower than the dielectric filled (DF) MSTL of 0.5012 dB/mm at 110 GHz.
{"title":"Contactless Air-Filled Mode Selective Transmission Line","authors":"Xiao-he Cheng, Tingting Xie, Yuan Yao, Yaohui Yang, Ting Zhang, Junsheng Yu, Xiao-dong Chen","doi":"10.1109/LMWC.2022.3179872","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3179872","url":null,"abstract":"An air-filled mode selective transmission line (AF-MSTL) consisting of an opened groove gap waveguide (GWG) and an inverted coplanar waveguide (CPW) is proposed in this letter. By using the electromagnetic band gap (EBG) structure, the electrical contacts of AF-MSTL are not required during the assembly process. To verify the design, the AF-MSTL prototype, connected to two designed grounded-CPW (GCPW) to AF-MSTL transitions to build a back-to-back structure, has been fabricated and measured. A measured insertion loss of 0.2857 dB/mm at 110 GHz is achieved, which is lower than the dielectric filled (DF) MSTL of 0.5012 dB/mm at 110 GHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43069402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3181407
Eissa Mohamed, G. Fischer, Thomas Mausolf, H. Rücker, A. Malignaggi, G. Kahmen
A power combined wideband power amplifier (PA) covering the $J$ -band (220–320 GHz) is presented in 130-nm BiCMOS technology. The input power is split by two cascaded 1-to-2 power splitters with amplification stages in-between. The four split signals drive four output stages, which have their outputs combined within a 4-way zero-degree combiner. The splitting and combining networks also incorporate impedance matching. After de-embedding the I/O pads and baluns of 2 dB loss at each side, the PA achieves a gain of 20 dB at the middle of the band and a minimum gain of 17 dB at 320 GHz with I/O return losses below −5 dB. The PA records a saturated output power ranging from 9.5 to 14.5 dBm across the $J$ -band. It consumes 710 mW from a 3 V supply which corresponds to a drain efficiency ($eta _{d}$ ) of 3.15% at 270 GHz. The presented PA achieves twice better bandwidth with 1.5 times better $eta _{d}$ than the state-of-the-art silicon-based amplifiers above 200 GHz. To the authors’ knowledge, this is the first PA covering the whole $J$ -band in silicon technologies.
{"title":"220–320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology","authors":"Eissa Mohamed, G. Fischer, Thomas Mausolf, H. Rücker, A. Malignaggi, G. Kahmen","doi":"10.1109/LMWC.2022.3181407","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3181407","url":null,"abstract":"A power combined wideband power amplifier (PA) covering the <inline-formula> <tex-math notation=\"LaTeX\">$J$ </tex-math></inline-formula>-band (220–320 GHz) is presented in 130-nm BiCMOS technology. The input power is split by two cascaded 1-to-2 power splitters with amplification stages in-between. The four split signals drive four output stages, which have their outputs combined within a 4-way zero-degree combiner. The splitting and combining networks also incorporate impedance matching. After de-embedding the I/O pads and baluns of 2 dB loss at each side, the PA achieves a gain of 20 dB at the middle of the band and a minimum gain of 17 dB at 320 GHz with I/O return losses below −5 dB. The PA records a saturated output power ranging from 9.5 to 14.5 dBm across the <inline-formula> <tex-math notation=\"LaTeX\">$J$ </tex-math></inline-formula>-band. It consumes 710 mW from a 3 V supply which corresponds to a drain efficiency (<inline-formula> <tex-math notation=\"LaTeX\">$eta _{d}$ </tex-math></inline-formula>) of 3.15% at 270 GHz. The presented PA achieves twice better bandwidth with 1.5 times better <inline-formula> <tex-math notation=\"LaTeX\">$eta _{d}$ </tex-math></inline-formula> than the state-of-the-art silicon-based amplifiers above 200 GHz. To the authors’ knowledge, this is the first PA covering the whole <inline-formula> <tex-math notation=\"LaTeX\">$J$ </tex-math></inline-formula>-band in silicon technologies.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45840837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3182059
Zhen Yue, Xin Xu, Shun Li, Yu Zhu, X. Lin
In this letter, an efficient and compact tri-band rectifier with large frequency ratio is proposed, which adopts a novel low-cost direct current (dc)-pass filter structure in the design. Three large frequency ratio rectifiers are combined together by using diode arrays with a frequency-selective topology without additional impedance matching networks. The dc-pass filter is composed of microstrip line structures cascaded low-cost lumped components, which can effectively suppress the high-order harmonics at high- and low-frequency points while reducing the circuit size and costs of large frequency ratio. For validation, the proposed rectifier working at 0.915, 2.45, and 5.8 GHz is fabricated with the dimensions of 29.5 mm $times21.3$ mm. The measured results show that the RF-dc power conversion efficiency (PCE) reaches 72.6%, 71.8%, and 73.5% at 0.915, 2.45, and 5.8 GHz, respectively, when the input power is 19 dBm. Compared with traditional multiband rectifiers, the proposed topology exhibits merits of compact size, high efficiency, and large frequency ratio.
本文提出了一种高效紧凑的大频率比三带整流器，该整流器在设计中采用了一种新颖的低成本直流通滤波器结构。三个大频率比整流器通过使用具有频率选择拓扑的二极管阵列组合在一起，而不需要额外的阻抗匹配网络。该直流通滤波器由微带线结构级联低成本集总元件组成，可以有效抑制高、低频点的高次谐波，同时减小了大频率比的电路尺寸和成本。为验证所提出的整流器工作频率为0.915、2.45和5.8 GHz，尺寸为29.5 mm × 21.3 mm。测量结果表明，当输入功率为19 dBm时，在0.915、2.45和5.8 GHz时，RF-dc功率转换效率(PCE)分别达到72.6%、71.8%和73.5%。与传统的多带整流器相比，该拓扑结构具有体积小、效率高、频率比大等优点。
{"title":"Efficient and Compact Tri-Band Rectifier With Large Frequency Ratio for WPT","authors":"Zhen Yue, Xin Xu, Shun Li, Yu Zhu, X. Lin","doi":"10.1109/LMWC.2022.3182059","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182059","url":null,"abstract":"In this letter, an efficient and compact tri-band rectifier with large frequency ratio is proposed, which adopts a novel low-cost direct current (dc)-pass filter structure in the design. Three large frequency ratio rectifiers are combined together by using diode arrays with a frequency-selective topology without additional impedance matching networks. The dc-pass filter is composed of microstrip line structures cascaded low-cost lumped components, which can effectively suppress the high-order harmonics at high- and low-frequency points while reducing the circuit size and costs of large frequency ratio. For validation, the proposed rectifier working at 0.915, 2.45, and 5.8 GHz is fabricated with the dimensions of 29.5 mm $times21.3$ mm. The measured results show that the RF-dc power conversion efficiency (PCE) reaches 72.6%, 71.8%, and 73.5% at 0.915, 2.45, and 5.8 GHz, respectively, when the input power is 19 dBm. Compared with traditional multiband rectifiers, the proposed topology exhibits merits of compact size, high efficiency, and large frequency ratio.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48662311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3183446
Hongkun Li, Yiyang Shu, Changting Pi, Xun Luo
In this letter, a dual-mode rotary traveling-wave oscillator (RTWO) is proposed to achieve wide operation bandwidth and multiple phases. Two twisted differential transmission lines are coupled together to form the dual-mode traveling-wave resonator. Sixteen pairs of back-to-back inverters and capacitors are connected to the resonators to introduce the multicore multi-phase operation. The mode switches are used to control the coupling direction and select the desired mode without degrading the quality factor. Verified in a 40-nm CMOS process, the proposed dual-mode RTWO exhibits a dual-mode frequency range from 19.1 to 25.5 GHz with the core size of 0.08 mm $^{textbf {2}}$ . The measured 10-MHz phase noise at 25.30 and 22.12 GHz is −129.6 and −131.5 dBc/Hz, respectively. The best FoM and FoMT are 186.2 and 195.4 dBc/Hz, respectively.
{"title":"A 19.1–25.5-GHz Compact Dual-Mode Rotary Traveling-Wave Oscillator With 195.4-dBc/Hz FoM","authors":"Hongkun Li, Yiyang Shu, Changting Pi, Xun Luo","doi":"10.1109/LMWC.2022.3183446","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3183446","url":null,"abstract":"In this letter, a dual-mode rotary traveling-wave oscillator (RTWO) is proposed to achieve wide operation bandwidth and multiple phases. Two twisted differential transmission lines are coupled together to form the dual-mode traveling-wave resonator. Sixteen pairs of back-to-back inverters and capacitors are connected to the resonators to introduce the multicore multi-phase operation. The mode switches are used to control the coupling direction and select the desired mode without degrading the quality factor. Verified in a 40-nm CMOS process, the proposed dual-mode RTWO exhibits a dual-mode frequency range from 19.1 to 25.5 GHz with the core size of 0.08 mm $^{textbf {2}}$ . The measured 10-MHz phase noise at 25.30 and 22.12 GHz is −129.6 and −131.5 dBc/Hz, respectively. The best FoM and FoMT are 186.2 and 195.4 dBc/Hz, respectively.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43289221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3181058
Jun Tian, Yucheng Teng, Ruining Li, Yijiang Zhou, Daxing Zhang, S. Liu, Song Xue, Kabin Lin, Meng Wang, G. Leng, Congsi Wang
A method for modeling the interconnection and signal transmission performance of double bond ribbons with configuration variation has been proposed. Arc interval function parameterization has been used to define the geometry of bond ribbons. The coupling model was created using the equivalent circuit approach, taking into account the mutual coupling between two ribbons. The average relative error of return loss is 9.21%, and the average relative error of insertion loss is 0.23%. The accuracy of the model has been verified, and the envelope interval of the signal transmission performance considering the variation of the interconnection configuration has been calculated.
{"title":"Equivalent Circuit-Based Coupling Modeling of Double Bond Ribbons Interconnection Variation in Electronic Packaging","authors":"Jun Tian, Yucheng Teng, Ruining Li, Yijiang Zhou, Daxing Zhang, S. Liu, Song Xue, Kabin Lin, Meng Wang, G. Leng, Congsi Wang","doi":"10.1109/LMWC.2022.3181058","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3181058","url":null,"abstract":"A method for modeling the interconnection and signal transmission performance of double bond ribbons with configuration variation has been proposed. Arc interval function parameterization has been used to define the geometry of bond ribbons. The coupling model was created using the equivalent circuit approach, taking into account the mutual coupling between two ribbons. The average relative error of return loss is 9.21%, and the average relative error of insertion loss is 0.23%. The accuracy of the model has been verified, and the envelope interval of the signal transmission performance considering the variation of the interconnection configuration has been calculated.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45311360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3178933
Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy
This letter presents a four-way power combined $D$ -band power amplifier (PA) in 0.13-$mu text{m}$ SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) $D$ -band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.
{"title":"A -Band Power Amplifier With Four-Way Combining in 0.13-μm SiGe","authors":"Ibrahim Kagan Aksoyak, Matthias Möck, M. Kaynak, A. Ulusoy","doi":"10.1109/LMWC.2022.3178933","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178933","url":null,"abstract":"This letter presents a four-way power combined <inline-formula> <tex-math notation=\"LaTeX\">$D$ </tex-math></inline-formula>-band power amplifier (PA) in 0.13-<inline-formula> <tex-math notation=\"LaTeX\">$mu text{m}$ </tex-math></inline-formula> SiGe technology. The conventional cascode topology is modified by adding an additional interstage network between the common-emitter (CE) and common-base (CB) devices. Further techniques, such as power combining and adaptive bias circuits, are implemented to boost the power generation and the efficiency of the amplifier. The realized PA exhibits a saturated output power of 19.6 dBm with a maximum power-added-efficiency (PAE) of 9.5% at 130 GHz, which is a leading-edge performance among the reported silicon (Si) <inline-formula> <tex-math notation=\"LaTeX\">$D$ </tex-math></inline-formula>-band PAs in similar technologies. The small-signal gain peaks at 16 dB and the PA has a 3-dB bandwidth of 18 GHz.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":null,"pages":null},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46827480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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