Pub Date : 2022-12-01DOI: 10.1109/LMWC.2022.3193424
Zuo Xu, Yongle Wu, Qingxiang Dong, Weimin Wang
This letter presents a novel miniaturized dual-band bandpass filter (BPF) using a dual-mode dielectric waveguide resonator (DWR). The DWR is a cylinder dielectric block with the surface being silver-coated. The two modes are TM010 and TM011 modes, which are used to construct the two passbands. The frequency of them can be adjusted by changing the radius and the height of the cylinder DWR and the frequency space can be controlled independently. The BPF is composed of three cylindrical cavities, which are arranged in an equilateral triangle. The three cavities construct a cascaded trisection (CT) unit, which creates a transmission zero (TZ) at the upper side of the two passbands. Finally, a dual-band BPF using DWR is simulated, manufactured, and measured to exhibit the feasibility of the proposed design. Their results are in good agreement, showing good performance, such as miniaturization, good return loss (RL), and upper stopband selectivity.
{"title":"Miniaturized Dual-Band Filter Using Dual-Mode Dielectric Waveguide Resonator","authors":"Zuo Xu, Yongle Wu, Qingxiang Dong, Weimin Wang","doi":"10.1109/LMWC.2022.3193424","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3193424","url":null,"abstract":"This letter presents a novel miniaturized dual-band bandpass filter (BPF) using a dual-mode dielectric waveguide resonator (DWR). The DWR is a cylinder dielectric block with the surface being silver-coated. The two modes are TM010 and TM011 modes, which are used to construct the two passbands. The frequency of them can be adjusted by changing the radius and the height of the cylinder DWR and the frequency space can be controlled independently. The BPF is composed of three cylindrical cavities, which are arranged in an equilateral triangle. The three cavities construct a cascaded trisection (CT) unit, which creates a transmission zero (TZ) at the upper side of the two passbands. Finally, a dual-band BPF using DWR is simulated, manufactured, and measured to exhibit the feasibility of the proposed design. Their results are in good agreement, showing good performance, such as miniaturization, good return loss (RL), and upper stopband selectivity.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1411-1414"},"PeriodicalIF":3.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47607648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3180999
Xuexue Zhang, Xiaokang Niu, Qin Chen, Xin Chen, Depeng Cheng, Jing Feng, Jun Feng, Lianming Li
This letter presents a 39-GHz phase-inverting variable gain power amplifier (VGPA) for 5G communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the VGPA realized the dB-linear gain control characteristic as well as 180° phase inversion. At 0°/180° phase states, the 39-GHz VGPA achieves the maximum gain of 38.7/38.9 dB with gain tuning range of 5.6/5.2 dB, respectively. Over 38–43 GHz, the phase inversion error is limited within 5.9°, and the rms phase error is less than 3.6°/2.2°. Meanwhile, with the metal interleaving coplanar transformer matching network, this VGPA achieves 17.7/17.6-dBm Psat and 13.2/13.36-dBm OP1 dB, with the power added efficiency (PAE) of 35%/34.5% and 13.6%/14.4% at the saturation and 1-dB compression points, respectively. Over the gain control states, the OP1 dB fluctuation is less than 0.3 dB. Implemented in a 65-nm CMOS process, the proposed VGPA consumes 150 mW with a chip area of 0.3 mm2.
{"title":"A 39-GHz Phase-Inverting Variable Gain Power Amplifier in 65-nm CMOS for 5G Communication","authors":"Xuexue Zhang, Xiaokang Niu, Qin Chen, Xin Chen, Depeng Cheng, Jing Feng, Jun Feng, Lianming Li","doi":"10.1109/LMWC.2022.3180999","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3180999","url":null,"abstract":"This letter presents a 39-GHz phase-inverting variable gain power amplifier (VGPA) for 5G communication. Adopting a Gilbert structure-based variable gain amplifier (VGA) stage, the VGPA realized the dB-linear gain control characteristic as well as 180° phase inversion. At 0°/180° phase states, the 39-GHz VGPA achieves the maximum gain of 38.7/38.9 dB with gain tuning range of 5.6/5.2 dB, respectively. Over 38–43 GHz, the phase inversion error is limited within 5.9°, and the rms phase error is less than 3.6°/2.2°. Meanwhile, with the metal interleaving coplanar transformer matching network, this VGPA achieves 17.7/17.6-dBm Psat and 13.2/13.36-dBm OP1 dB, with the power added efficiency (PAE) of 35%/34.5% and 13.6%/14.4% at the saturation and 1-dB compression points, respectively. Over the gain control states, the OP1 dB fluctuation is less than 0.3 dB. Implemented in a 65-nm CMOS process, the proposed VGPA consumes 150 mW with a chip area of 0.3 mm2.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1303-1306"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48784304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3179641
S. Choudhury, A. Mohan, M. Bozzi
In this letter, a wideband coaxial to air-filled waveguide transition is proposed, which has been realized by the substrate integrated waveguide (SIW) technology. The present design incorporates several air-filled vias of varying hole diameter to efficiently match the impedance over a wide operating bandwidth in the dominant TE10 mode, hence replacing the need for dielectric taper or larger footprint. A transition prototype has been designed and tested to validate the results. The measured return loss is better than 15 dB and insertion loss of 1 ± 0.1 dB over the band of interest (9.5–15 GHz), hence portraying a near-octave bandwidth from the proposed design.
{"title":"A Coaxial to Air-Filled Substrate Integrated Waveguide Transition With Near-Octave Bandwidth","authors":"S. Choudhury, A. Mohan, M. Bozzi","doi":"10.1109/LMWC.2022.3179641","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3179641","url":null,"abstract":"In this letter, a wideband coaxial to air-filled waveguide transition is proposed, which has been realized by the substrate integrated waveguide (SIW) technology. The present design incorporates several air-filled vias of varying hole diameter to efficiently match the impedance over a wide operating bandwidth in the dominant TE10 mode, hence replacing the need for dielectric taper or larger footprint. A transition prototype has been designed and tested to validate the results. The measured return loss is better than 15 dB and insertion loss of 1 ± 0.1 dB over the band of interest (9.5–15 GHz), hence portraying a near-octave bandwidth from the proposed design.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1275-1278"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47210835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3186036
Zhuang Xu, Jianfeng Zhai, Kai Wang, Jiawen Liu, Xuefa Zhai, Yan Guo, Chao Yu
The coefficients of digital predistortion (DPD) models are often extracted by the least square (LS) method, which has high computational complexity because of the operations of the large matrix. In this letter, a low complexity coefficient extraction method for instantaneous sample indexed magnitude-selective affine (I-MSA) model is proposed. The proposed method uses the tangent of the midpoint of the piecewise function to fit the curve. Therefore, the LS coefficient extraction only needs a small amount of data near the midpoint, rather than using all the data in the segmented region. Simulation and experimental results have confirmed that compared with the original LS method, the proposed method has similar modeling accuracy and linearization performance, but the computational complexity of coefficient extraction is greatly reduced.
{"title":"A Tangent Approximation Coefficient Extraction Method for Instantaneous Sample Indexed Magnitude-Selective Affine Behavioral Model","authors":"Zhuang Xu, Jianfeng Zhai, Kai Wang, Jiawen Liu, Xuefa Zhai, Yan Guo, Chao Yu","doi":"10.1109/LMWC.2022.3186036","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3186036","url":null,"abstract":"The coefficients of digital predistortion (DPD) models are often extracted by the least square (LS) method, which has high computational complexity because of the operations of the large matrix. In this letter, a low complexity coefficient extraction method for instantaneous sample indexed magnitude-selective affine (I-MSA) model is proposed. The proposed method uses the tangent of the midpoint of the piecewise function to fit the curve. Therefore, the LS coefficient extraction only needs a small amount of data near the midpoint, rather than using all the data in the segmented region. Simulation and experimental results have confirmed that compared with the original LS method, the proposed method has similar modeling accuracy and linearization performance, but the computational complexity of coefficient extraction is greatly reduced.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1375-1378"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42906613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3182020
S. Hamidi, D. Dawn
This letter presents a fully-integrated 2-bit CMOS voltage-controlled oscillator (VCO) along with a 2-bit buffer, which delivers the highest RF output power among recently reported state-of-the-art to the best of the authors’ knowledge. The proposed 2-bit VCO is designed and fabricated in a $0.18-mu text{m}$ CMOS process with a die size of 1.2 mm $times$ 1.2 mm, which covers four frequency bands of interest. Fine-tuning at each of the four frequency bands is also obtained by utilizing two varactors. The proposed 2-bit VCO delivers a single-ended output power of 6.5/6.8/10.6/12.5 dBm at 0.930/1.157/1.436/1.917 GHz, respectively. This 2-bit VCO can cover frequency ranges of 930–1005, 1046–1157, 1248–1436, and 1540–1917 MHz, thus providing a total frequency bandwidth of 751 MHz. The proposed 2-bit VCO at each frequency band demonstrates −99, −93, −90, and −86 dBc/Hz for phase noise, and −150, −150, −160, and −168 dBc/Hz for figure-of-merit (FOM), respectively.
{"title":"A 2-Bit Voltage-Controlled Oscillator (VCO) for Multiband Wireless Applications","authors":"S. Hamidi, D. Dawn","doi":"10.1109/LMWC.2022.3182020","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182020","url":null,"abstract":"This letter presents a fully-integrated 2-bit CMOS voltage-controlled oscillator (VCO) along with a 2-bit buffer, which delivers the highest RF output power among recently reported state-of-the-art to the best of the authors’ knowledge. The proposed 2-bit VCO is designed and fabricated in a <inline-formula> <tex-math notation=\"LaTeX\">$0.18-mu text{m}$ </tex-math></inline-formula> CMOS process with a die size of 1.2 mm <inline-formula> <tex-math notation=\"LaTeX\">$times$ </tex-math></inline-formula> 1.2 mm, which covers four frequency bands of interest. Fine-tuning at each of the four frequency bands is also obtained by utilizing two varactors. The proposed 2-bit VCO delivers a single-ended output power of 6.5/6.8/10.6/12.5 dBm at 0.930/1.157/1.436/1.917 GHz, respectively. This 2-bit VCO can cover frequency ranges of 930–1005, 1046–1157, 1248–1436, and 1540–1917 MHz, thus providing a total frequency bandwidth of 751 MHz. The proposed 2-bit VCO at each frequency band demonstrates −99, −93, −90, and −86 dBc/Hz for phase noise, and −150, −150, −160, and −168 dBc/Hz for figure-of-merit (FOM), respectively.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1307-1310"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43444815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3180082
Hai-Hong Fu, Kai Li, Kaixue Ma
This letter presents a fully integrated frequency doubler in the TSMC 28-nm CMOS technology. MOS transistor capacitor neutralization is introduced in the differential driving amplifier, which shows better robustness than MOM capacitor neutralization under PVT variations. Besides, a stacked transformer-based balun is designed to achieve good balance performance. The effect of dummy metal on the performance of the proposed balun is also discussed. The measured results show that the 3-dB bandwidth is 25 GHz (208–233 GHz) and the peak power-added efficiency is 1.1% with a dc power consumption of 26.4 mW at 222 GHz. The peak conversion gain is −7.2 dB and the variation in conversion gain is less than 1 dB within −7- to 1-dBm input power range. Moreover, the chip size is $492times 412,,mu text{m}^{2}$ , including GSG and DC pads.
{"title":"A 208–233-GHz Frequency Doubler With 1.1% Power-Added Efficiency in 28-nm CMOS","authors":"Hai-Hong Fu, Kai Li, Kaixue Ma","doi":"10.1109/LMWC.2022.3180082","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3180082","url":null,"abstract":"This letter presents a fully integrated frequency doubler in the TSMC 28-nm CMOS technology. MOS transistor capacitor neutralization is introduced in the differential driving amplifier, which shows better robustness than MOM capacitor neutralization under PVT variations. Besides, a stacked transformer-based balun is designed to achieve good balance performance. The effect of dummy metal on the performance of the proposed balun is also discussed. The measured results show that the 3-dB bandwidth is 25 GHz (208–233 GHz) and the peak power-added efficiency is 1.1% with a dc power consumption of 26.4 mW at 222 GHz. The peak conversion gain is −7.2 dB and the variation in conversion gain is less than 1 dB within −7- to 1-dBm input power range. Moreover, the chip size is $492times 412,,mu text{m}^{2}$ , including GSG and DC pads.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1311-1314"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49169521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-11-01DOI: 10.1109/LMWC.2022.3189593
Jin-Fa Chang, Yo‐Sheng Lin
A low-power and low noise-figure (NF) 3.1–23.7-GHz CMOS variable-gain amplifier (VGA) is presented. The VGA composes of a complimentary common-source (CCS) first stage, followed by a common-source (CS) second stage. Low power and NF and wideband $S_{11}$ and $S_{21}$ are achieved due to the current-reused CCS input stage with multiple inductive impedance matching and gain compensation. A large gain tuning range (with low NF) is achieved due to the concurrent gate–voltage tuning (or current steering) of the first and the second stages. The VGA consumes 5.85 mW (at $V_{mathrm {ctrl}}$ of 1 V) and achieves excellent 3-dB bandwidth ($f_{3,mathrm {dB}}$ ) of 20.6 GHz (3.1–23.7 GHz), maximum $S_{21}$ of 11.9 dB, minimum NF (NFmin) of 2.53 dB, average NF (NFavg) of 3.97 dB, small group delay (GD) variation of ±16.5 ps, and input third-order intercept point (IIP3) of −6.5 dBm. Moreover, the VGA achieves a decent gain tuning range of 23.4 dB (−5.4 to 18 dB) for $V_{mathrm {ctrl}}$ of 0.6–1.6 V. The chip area is 0.364 mm2.
{"title":"5.85-mW 3.1–23.7-GHz Two-Stage CMOS VGA With 2.53-dB NF Using Concurrent Current Steering","authors":"Jin-Fa Chang, Yo‐Sheng Lin","doi":"10.1109/LMWC.2022.3189593","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3189593","url":null,"abstract":"A low-power and low noise-figure (NF) 3.1–23.7-GHz CMOS variable-gain amplifier (VGA) is presented. The VGA composes of a complimentary common-source (CCS) first stage, followed by a common-source (CS) second stage. Low power and NF and wideband <inline-formula> <tex-math notation=\"LaTeX\">$S_{11}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation=\"LaTeX\">$S_{21}$ </tex-math></inline-formula> are achieved due to the current-reused CCS input stage with multiple inductive impedance matching and gain compensation. A large gain tuning range (with low NF) is achieved due to the concurrent gate–voltage tuning (or current steering) of the first and the second stages. The VGA consumes 5.85 mW (at <inline-formula> <tex-math notation=\"LaTeX\">$V_{mathrm {ctrl}}$ </tex-math></inline-formula> of 1 V) and achieves excellent 3-dB bandwidth (<inline-formula> <tex-math notation=\"LaTeX\">$f_{3,mathrm {dB}}$ </tex-math></inline-formula>) of 20.6 GHz (3.1–23.7 GHz), maximum <inline-formula> <tex-math notation=\"LaTeX\">$S_{21}$ </tex-math></inline-formula> of 11.9 dB, minimum NF (NFmin) of 2.53 dB, average NF (NFavg) of 3.97 dB, small group delay (GD) variation of ±16.5 ps, and input third-order intercept point (IIP3) of −6.5 dBm. Moreover, the VGA achieves a decent gain tuning range of 23.4 dB (−5.4 to 18 dB) for <inline-formula> <tex-math notation=\"LaTeX\">$V_{mathrm {ctrl}}$ </tex-math></inline-formula> of 0.6–1.6 V. The chip area is 0.364 mm2.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1331-1334"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48509057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter proposes a wide-range reconfigurable bandpass filter (WRBPF) based on the cross-shape triple-mode resonator. Varactor diodes and switching diodes are utilized at the ends of the resonator and the positions of external coupling, which combines the two working modes of the low-frequency band and high-frequency band, greatly broaden the tunable range of the center frequency ($f_{0}$ ). When the 3-dB bandwidth of WRBPF is 180 MHz, $f_{0}$ can be adjusted from 0.78 to 1.93 GHz, and the relative adjustment range is 84.9%. When $f_{0}$ is 1.355 GHz, the absolute bandwidth can be adjusted from 110 to 950 MHz, and the relative bandwidth adjustment range is 8.1%–70.1%. Moreover, the circuit size of WRBPF is only $0.29,,lambda g,,times 0.22,,lambda g$ . The experimental results show that WRBPF has not only a simple structure but also an excellent performance.
{"title":"A Compact Wide-Range Frequency and Bandwidth Reconfigurable Filter","authors":"Mingen Tian, Zhihe Long, Lijun Feng, Leilei He, Tianliang Zhang","doi":"10.1109/LMWC.2022.3178722","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3178722","url":null,"abstract":"This letter proposes a wide-range reconfigurable bandpass filter (WRBPF) based on the cross-shape triple-mode resonator. Varactor diodes and switching diodes are utilized at the ends of the resonator and the positions of external coupling, which combines the two working modes of the low-frequency band and high-frequency band, greatly broaden the tunable range of the center frequency (<inline-formula> <tex-math notation=\"LaTeX\">$f_{0}$ </tex-math></inline-formula>). When the 3-dB bandwidth of WRBPF is 180 MHz, <inline-formula> <tex-math notation=\"LaTeX\">$f_{0}$ </tex-math></inline-formula> can be adjusted from 0.78 to 1.93 GHz, and the relative adjustment range is 84.9%. When <inline-formula> <tex-math notation=\"LaTeX\">$f_{0}$ </tex-math></inline-formula> is 1.355 GHz, the absolute bandwidth can be adjusted from 110 to 950 MHz, and the relative bandwidth adjustment range is 8.1%–70.1%. Moreover, the circuit size of WRBPF is only <inline-formula> <tex-math notation=\"LaTeX\">$0.29,,lambda g,,times 0.22,,lambda g$ </tex-math></inline-formula>. The experimental results show that WRBPF has not only a simple structure but also an excellent performance.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1283-1286"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42024341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A quasi-reflectionless frequency division multiplexer (FDM) with directional filters (DFs) in multilayer liquid crystal polymer (LCP) substrates is proposed for $E$ - and $W$ -band applications. The in-series cascaded DFs are designed at 74, 84, and 94 GHz, each of which comprises two microstrip lines in the first layer, two pairs of coupling slots in the second layer, and loop resonators in the third layer. The distance between DFs is optimized for suppressing reflection and insertion losses, and the asymmetric distribution of DFs is designed to obtain a low profile. The experimental data demonstrate a 3-dB passband of 8.3%, 8.8%, and 9.7% centered at 74, 84, and 94 GHz, respectively, for the proposed FDM, showing a good match with the simulation. The corresponding insertion loss is measured as 3.63, 3.4, and 2.72 dB at 74, 84, and 94 GHz, respectively. The proposed device may find many applications in multiband and ultrawideband communication and radar systems.
{"title":"Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at - and -Band","authors":"Mengfa Wang, Baoqing Zhang, Zhaolin Li, Yiming Wang, Qinglei Guo, Weihong Liu, Y. Yashchyshyn, Aimin Song, Yifei Zhang","doi":"10.1109/LMWC.2022.3177606","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3177606","url":null,"abstract":"A quasi-reflectionless frequency division multiplexer (FDM) with directional filters (DFs) in multilayer liquid crystal polymer (LCP) substrates is proposed for <inline-formula> <tex-math notation=\"LaTeX\">$E$ </tex-math></inline-formula>- and <inline-formula> <tex-math notation=\"LaTeX\">$W$ </tex-math></inline-formula>-band applications. The in-series cascaded DFs are designed at 74, 84, and 94 GHz, each of which comprises two microstrip lines in the first layer, two pairs of coupling slots in the second layer, and loop resonators in the third layer. The distance between DFs is optimized for suppressing reflection and insertion losses, and the asymmetric distribution of DFs is designed to obtain a low profile. The experimental data demonstrate a 3-dB passband of 8.3%, 8.8%, and 9.7% centered at 74, 84, and 94 GHz, respectively, for the proposed FDM, showing a good match with the simulation. The corresponding insertion loss is measured as 3.63, 3.4, and 2.72 dB at 74, 84, and 94 GHz, respectively. The proposed device may find many applications in multiband and ultrawideband communication and radar systems.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"21 2","pages":"1287-1290"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41306191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This letter presents a low-resolution multiband transmitter architecture using direct digital synthesis (DDS) with dithering. Modern modulated signals constructed by a low-resolution digital-to-analog converter (DAC) suffer from quantization errors and distortions. The proposed technique reduces the quantization problems with the use of a proper oversampling ratio (OSR) and the dithering technique. This technique has lower cost and lower complexity compared to conventional transmitters while maintaining linearity performance. A 50-MHz 5G NR 256-quadratic-amplitude modulation (QAM) signal is used for concept validation at bands n1, n40, and n50. The proposed work achieved the adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) requirements of under −30 dBc and 3.5%, respectively. A single 3-bit 10-GS/s radio frequency (RF) DAC is used where the performance is similar to a conventional transmitter using a pair of 5-bit baseband in-phase and quadrature (IQ) DACs.
这封信介绍了一种使用带抖动的直接数字合成（DDS）的低分辨率多频带发射机结构。由低分辨率数模转换器（DAC）构造的现代调制信号遭受量化误差和失真。所提出的技术通过使用适当的过采样率（OSR）和抖动技术来减少量化问题。与传统发射机相比，该技术具有更低的成本和更低的复杂性，同时保持线性性能。50MHz 5G NR 256二次幅度调制（QAM）信号用于频带n1、n40和n50的概念验证。所提出的工作分别实现了−30 dBc和3.5%以下的相邻信道泄漏率（ACLR）和误差矢量幅度（EVM）要求。使用单个3比特10-GS/s射频（RF）DAC，其中性能类似于使用一对5比特基带同相和正交（IQ）DAC的传统发射机。
{"title":"A Low-Resolution Direct Digital Synthesis Transmitter Architecture Using Dithering for Multiband 5G NR Mobile Applications","authors":"You-Huei Chen, Shu-Chen Lin, Jui-Hsin Hung, Hao-Shun Yang, Jau-Horng Chen, Y. Chen","doi":"10.1109/LMWC.2022.3182662","DOIUrl":"https://doi.org/10.1109/LMWC.2022.3182662","url":null,"abstract":"This letter presents a low-resolution multiband transmitter architecture using direct digital synthesis (DDS) with dithering. Modern modulated signals constructed by a low-resolution digital-to-analog converter (DAC) suffer from quantization errors and distortions. The proposed technique reduces the quantization problems with the use of a proper oversampling ratio (OSR) and the dithering technique. This technique has lower cost and lower complexity compared to conventional transmitters while maintaining linearity performance. A 50-MHz 5G NR 256-quadratic-amplitude modulation (QAM) signal is used for concept validation at bands n1, n40, and n50. The proposed work achieved the adjacent channel leakage ratio (ACLR) and error vector magnitude (EVM) requirements of under −30 dBc and 3.5%, respectively. A single 3-bit 10-GS/s radio frequency (RF) DAC is used where the performance is similar to a conventional transmitter using a pair of 5-bit baseband in-phase and quadrature (IQ) DACs.","PeriodicalId":13130,"journal":{"name":"IEEE Microwave and Wireless Components Letters","volume":"32 1","pages":"1359-1362"},"PeriodicalIF":3.0,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47828607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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