Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516576
G. Panaitov, R. Ott, N. Klein
We present a novel approach for discrete frequency tuning of dielectric resonators based on electromechanical actuators such as MEMS. The concept is based on the intermodal coupling between the TE01δ mode of a cylindrical dielectric resonator and radially arranged planar slotline resonators. The resonance frequency of the dielectric resonator is changed by switching a resistive load at the open end of each quarter wave slotline resonator leading to a variation of the coupling between the slotline resonator mode and the TE01δ mode of the dielectric resonator. As the consequence the resonance frequency of the TE01δ mode changes. Based on this novel tuning concept discrete tuning by 5 MHz in 0.25 MHz frequency steps was demonstrated for a test resonator at 2 GHz. The unloaded quality factor is about 10.000 and the measured switching time is about one millisecond.
{"title":"Discrete Tuneable Dielectric Resonator for Microwave Applications","authors":"G. Panaitov, R. Ott, N. Klein","doi":"10.1109/MWSYM.2005.1516576","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516576","url":null,"abstract":"We present a novel approach for discrete frequency tuning of dielectric resonators based on electromechanical actuators such as MEMS. The concept is based on the intermodal coupling between the TE01δ mode of a cylindrical dielectric resonator and radially arranged planar slotline resonators. The resonance frequency of the dielectric resonator is changed by switching a resistive load at the open end of each quarter wave slotline resonator leading to a variation of the coupling between the slotline resonator mode and the TE01δ mode of the dielectric resonator. As the consequence the resonance frequency of the TE01δ mode changes. Based on this novel tuning concept discrete tuning by 5 MHz in 0.25 MHz frequency steps was demonstrated for a test resonator at 2 GHz. The unloaded quality factor is about 10.000 and the measured switching time is about one millisecond.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86899556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516641
P. McGovern, J. Benedikt, P. Tasker, J. Powell, K. Hilton, J. Glasper, R. Balmer, T. Martin, M. Uren
AlGaN/GaN HFETs have been analyzed using pulsed I-V measurements and RF time-domain measurements in an attempt to analyze the phenomenon of DC-RF dispersion and achieve maximum RF performance. The pulsed I-V measurements exhibited the common problem of current slump, as did the RF power performance of the device. The RF time-domain waveforms are used to show that the RF knee-walkout increases with drain bias voltage, thus negating any improved power and efficiency performance that a larger voltage swing would achieve. It was also found that the degree of RF knee-walkout changes depending on the class of operation of the device. Although current slump is evident, it is not permanent, and there is negligible degradation of the device after prolonged RF stimulus.
{"title":"Analysis of DC-RF dispersion in AlGaN/GaN HFETs using pulsed I-V and time-domain waveform measurements","authors":"P. McGovern, J. Benedikt, P. Tasker, J. Powell, K. Hilton, J. Glasper, R. Balmer, T. Martin, M. Uren","doi":"10.1109/MWSYM.2005.1516641","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516641","url":null,"abstract":"AlGaN/GaN HFETs have been analyzed using pulsed I-V measurements and RF time-domain measurements in an attempt to analyze the phenomenon of DC-RF dispersion and achieve maximum RF performance. The pulsed I-V measurements exhibited the common problem of current slump, as did the RF power performance of the device. The RF time-domain waveforms are used to show that the RF knee-walkout increases with drain bias voltage, thus negating any improved power and efficiency performance that a larger voltage swing would achieve. It was also found that the degree of RF knee-walkout changes depending on the class of operation of the device. Although current slump is evident, it is not permanent, and there is negligible degradation of the device after prolonged RF stimulus.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74010249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517166
Sang Hyun Park, C. Park
Three channel optical receiver array with low inter-channel crosstalk is realized with InGaP/GaAs HBT technology and 3D multilayer low temperature cofiring ceramics (LTCC) module. The severe crosstalk in conventional on-chip bus module is explained especially at the frequency of 10 GHz. Neutralization feedback circuit with LTCC embedded bus structure is proposed to suppress significant high frequency crosstalk from conventional on-chip bus and inter-metallic capacitance. This new module structure demonstrates 5 dB better suppressed-coupling than a conventional on-chip bus module.
{"title":"Crosstalk improved three channel receiver module for 10 Gb/s parallel optical interconnect application","authors":"Sang Hyun Park, C. Park","doi":"10.1109/MWSYM.2005.1517166","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517166","url":null,"abstract":"Three channel optical receiver array with low inter-channel crosstalk is realized with InGaP/GaAs HBT technology and 3D multilayer low temperature cofiring ceramics (LTCC) module. The severe crosstalk in conventional on-chip bus module is explained especially at the frequency of 10 GHz. Neutralization feedback circuit with LTCC embedded bus structure is proposed to suppress significant high frequency crosstalk from conventional on-chip bus and inter-metallic capacitance. This new module structure demonstrates 5 dB better suppressed-coupling than a conventional on-chip bus module.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74303704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516700
M. Jiang, Meng-Huan Wu, J. Kuo
An inherent zero of a microstrip coupled stage near twice the design frequency (2f/sub 0/) is found tunable by varying its coupling length. This zero is used to suppress the unwanted response of parallel-coupled line filters at this frequency by using over-coupled end stages. The above idea is extended to design over-coupled middle stages for suppressing the spurious |S/sub 21/| peaks at 3f/sub 0/ and 4f/sub 0/ of the filter, so that the upper stopband can be greatly enhanced up to 5f/sub 0/. The passband preserves a response as good as the traditional design. Measured results have a good agreement with simulation data and show that the idea works very well.
{"title":"Parallel-coupled microstrip filters with over-coupled stages for multispurious suppression","authors":"M. Jiang, Meng-Huan Wu, J. Kuo","doi":"10.1109/MWSYM.2005.1516700","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516700","url":null,"abstract":"An inherent zero of a microstrip coupled stage near twice the design frequency (2f/sub 0/) is found tunable by varying its coupling length. This zero is used to suppress the unwanted response of parallel-coupled line filters at this frequency by using over-coupled end stages. The above idea is extended to design over-coupled middle stages for suppressing the spurious |S/sub 21/| peaks at 3f/sub 0/ and 4f/sub 0/ of the filter, so that the upper stopband can be greatly enhanced up to 5f/sub 0/. The passband preserves a response as good as the traditional design. Measured results have a good agreement with simulation data and show that the idea works very well.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75176911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516675
T. Chakraborty, I. Hunter, R. Kurchania, Andrew Bell, S. Chakraborty
An investigation into intermodulation (IM) distortion in bulk ferroelectric bandpass filters is presented. The main objective has been to study the effect of the response time of ferroelectric material on IM distortion. In order to investigate the response, time IM measurements with wide carrier frequency spacing must be performed. Thus a novel planar dual-mode bandpass filter, with 600 MHz bandwidth at 2 GHz, has been designed and fabricated on a bulk Barium Strontium Titanate (BST) substrate. The two tone third-order IM has been measured for a range of signal separations in order to estimate the material response time.
{"title":"Intermodulation distortion in wide-band dual-mode bulk ferroelectric bandpass filters","authors":"T. Chakraborty, I. Hunter, R. Kurchania, Andrew Bell, S. Chakraborty","doi":"10.1109/MWSYM.2005.1516675","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516675","url":null,"abstract":"An investigation into intermodulation (IM) distortion in bulk ferroelectric bandpass filters is presented. The main objective has been to study the effect of the response time of ferroelectric material on IM distortion. In order to investigate the response, time IM measurements with wide carrier frequency spacing must be performed. Thus a novel planar dual-mode bandpass filter, with 600 MHz bandwidth at 2 GHz, has been designed and fabricated on a bulk Barium Strontium Titanate (BST) substrate. The two tone third-order IM has been measured for a range of signal separations in order to estimate the material response time.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74432024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517044
Jongsik Kim, S. Jeon, S. Moon, Nam-Young Kim, Hyunchol Shin
A new push-push VCO architecture takes the second harmonic output signal from a capacitive common-node in a negative-g/sub m/ oscillator topology. The generation of the 2nd harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. A prototype 12-GHz MMIC VCO realized in GaInP/GaAs HBT achieves an output power of -5 dBm, a phase noise of -108 dBc/Hz at 1 MHz offset while drawing 10.7 mA from a 2.4-V supply, which is equivalent to -175.8 dBc/Hz of VCO figure-of-merit.
{"title":"A 12-GHz GaInP/GaAs HBT VCO based on push-push output extraction from capacitive common-node","authors":"Jongsik Kim, S. Jeon, S. Moon, Nam-Young Kim, Hyunchol Shin","doi":"10.1109/MWSYM.2005.1517044","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517044","url":null,"abstract":"A new push-push VCO architecture takes the second harmonic output signal from a capacitive common-node in a negative-g/sub m/ oscillator topology. The generation of the 2nd harmonics is accounted for by the nonlinear current-voltage characteristic of the emitter-base junction diode causing; 1) significant voltage clipping and 2) different rising and falling time during the switching operation of core transistors. A prototype 12-GHz MMIC VCO realized in GaInP/GaAs HBT achieves an output power of -5 dBm, a phase noise of -108 dBc/Hz at 1 MHz offset while drawing 10.7 mA from a 2.4-V supply, which is equivalent to -175.8 dBc/Hz of VCO figure-of-merit.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74682474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516662
Shinho Kim, Y. Wang
A compact design of 2D antenna array for digital beamforming is proposed in this paper. The essential idea is based on switchable microstrip slot antennas in conjunction with spatial multiplexing of local elements (SMILE) techniques. The SMILE technique makes it possible to realize a series-fed digital-beamforming (DBF) antenna array in one dimension and leaves room for parallel element in the other dimension. This provides a simple way of constructing 2D DBF arrays with a simple and uni-planar feed network. It also offers other advantages such as low cost and compatibility with MMICs for the receiver system. A 4/spl times/4 receiving array test-bed at 5.5GHz operating frequency is fabricated and digital beamforming on this test-bed is successfully demonstrated in the E- and H- planes.
{"title":"A uni-planar fed 2D slot array for digital beamforming","authors":"Shinho Kim, Y. Wang","doi":"10.1109/MWSYM.2005.1516662","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516662","url":null,"abstract":"A compact design of 2D antenna array for digital beamforming is proposed in this paper. The essential idea is based on switchable microstrip slot antennas in conjunction with spatial multiplexing of local elements (SMILE) techniques. The SMILE technique makes it possible to realize a series-fed digital-beamforming (DBF) antenna array in one dimension and leaves room for parallel element in the other dimension. This provides a simple way of constructing 2D DBF arrays with a simple and uni-planar feed network. It also offers other advantages such as low cost and compatibility with MMICs for the receiver system. A 4/spl times/4 receiving array test-bed at 5.5GHz operating frequency is fabricated and digital beamforming on this test-bed is successfully demonstrated in the E- and H- planes.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72984584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517087
B. Analui, J. Buckwalter, A. Hajimiri
We present a method for estimating data dependent jitter (DDJ) introduced by a general LTI system, based on the system's step response. A perturbation technique is used to generalize the analytical expression for DDJ. Different scales of DDJ are defined that characterize the probability distribution of jitter. In particular, we identify a dominant prior bit that signifies the well-known distribution of DDJ, the two impulse functions. We also highlight that system bandwidth is not a complete measure for predicting DDJ. We verify our generalized analytical expression of DDJ experimentally and show that estimation errors are less than 7.5%.
{"title":"Estimating data-dependent jitter of a general LTI system from step response","authors":"B. Analui, J. Buckwalter, A. Hajimiri","doi":"10.1109/MWSYM.2005.1517087","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517087","url":null,"abstract":"We present a method for estimating data dependent jitter (DDJ) introduced by a general LTI system, based on the system's step response. A perturbation technique is used to generalize the analytical expression for DDJ. Different scales of DDJ are defined that characterize the probability distribution of jitter. In particular, we identify a dominant prior bit that signifies the well-known distribution of DDJ, the two impulse functions. We also highlight that system bandwidth is not a complete measure for predicting DDJ. We verify our generalized analytical expression of DDJ experimentally and show that estimation errors are less than 7.5%.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75579323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MTT67880.2005.9387850
Jianjun Gao, Lei Zhang, Jianjun Xu, Qi-jun Zhang
An improved nonlinear modeling technique for high electron mobility transistors (HEMT) based on the combination of the conventional equivalent circuit and artificial neural network (ANN) modeling techniques is presented. Effective initial values of the artificial neural network for each nonlinear element in HEMT model are evaluated from a semi-analytical parameter extraction technique. A multi-goal DC, S-parameter, and harmonic (DC/S/HB) training process has been formulated. Good agreement is obtained between the model and data of the DC, S parameter, and harmonic performance for a 200um gate width 0.25μm PHEMT (FHX04LG) over a wide range of bias points.
{"title":"Nonlinear HEMT Modeling Using Artificial Neural Network Technique","authors":"Jianjun Gao, Lei Zhang, Jianjun Xu, Qi-jun Zhang","doi":"10.1109/MTT67880.2005.9387850","DOIUrl":"https://doi.org/10.1109/MTT67880.2005.9387850","url":null,"abstract":"An improved nonlinear modeling technique for high electron mobility transistors (HEMT) based on the combination of the conventional equivalent circuit and artificial neural network (ANN) modeling techniques is presented. Effective initial values of the artificial neural network for each nonlinear element in HEMT model are evaluated from a semi-analytical parameter extraction technique. A multi-goal DC, S-parameter, and harmonic (DC/S/HB) training process has been formulated. Good agreement is obtained between the model and data of the DC, S parameter, and harmonic performance for a 200um gate width 0.25μm PHEMT (FHX04LG) over a wide range of bias points.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75737085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516743
K. Ishikura, I. Takenaka, K. Takahashi, M. Kanamori, K. Hasegawa, K. Asano
This report presents an L/S-band over 300 W GaAs heterojunction FETs (HJFETs) amplifier for 28V operation. We employed "dual field-modulating-plates (dual-FP) technology", in which one of the FP electrodes is connected to the gate and the other to the ground. The newly developed push-pull amplifier, with four dual-FPFET chips, demonstrated 55.1dBm (320W) CW output power with a 14.0dB linear gain and a maximum power-added efficiency (PAE) of 57% at 2.14GHz. Under two-carrier W-CDMA signals, it showed high drain efficiency (nd) of 30% and low IM3 of -37dBc at Pout of 47.5dBm. To our knowledge, this is the best performance ever reported among high power amplifiers for W-CDMA base stations.
{"title":"A 28V over 300 W GaAs heterojunction FET with dual field-modulating-plates for W-CDMA base stations","authors":"K. Ishikura, I. Takenaka, K. Takahashi, M. Kanamori, K. Hasegawa, K. Asano","doi":"10.1109/MWSYM.2005.1516743","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516743","url":null,"abstract":"This report presents an L/S-band over 300 W GaAs heterojunction FETs (HJFETs) amplifier for 28V operation. We employed \"dual field-modulating-plates (dual-FP) technology\", in which one of the FP electrodes is connected to the gate and the other to the ground. The newly developed push-pull amplifier, with four dual-FPFET chips, demonstrated 55.1dBm (320W) CW output power with a 14.0dB linear gain and a maximum power-added efficiency (PAE) of 57% at 2.14GHz. Under two-carrier W-CDMA signals, it showed high drain efficiency (nd) of 30% and low IM3 of -37dBc at Pout of 47.5dBm. To our knowledge, this is the best performance ever reported among high power amplifiers for W-CDMA base stations.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74786184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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