Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516927
A. Mollfulleda, P. Miskovsky, J. Mateu
This work presents the design, development and measurement of a robust passive pulse shaping network for UWB applications. Our approach is based on a novel symmetric hybrid-based topology. The general method to design this kind of shaping network is described. It demonstrates that by properly tuning the dimension of the hybrid topology one may compensate the unbalanced effects exhibited by a conventional T-junction shaping network topology. Microstrip technology is used to implement two pulse shaping networks. Measurement results show good agreement with simulation.
{"title":"Robust passive shaping network for impulse radio and UWB signal generator","authors":"A. Mollfulleda, P. Miskovsky, J. Mateu","doi":"10.1109/MWSYM.2005.1516927","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516927","url":null,"abstract":"This work presents the design, development and measurement of a robust passive pulse shaping network for UWB applications. Our approach is based on a novel symmetric hybrid-based topology. The general method to design this kind of shaping network is described. It demonstrates that by properly tuning the dimension of the hybrid topology one may compensate the unbalanced effects exhibited by a conventional T-junction shaping network topology. Microstrip technology is used to implement two pulse shaping networks. Measurement results show good agreement with simulation.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86009751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517041
H. Ishida, K. Araki
To realize a voltage controlled oscillator (VCO) in wireless communications, a device is developed using a new tunable ring filter. The oscillator is based upon the tunable ring filter, with a compact and sharp rejection filter, high performance active inductor. It operates in the 3.2 GHz to 4.1 GHz frequency range. The VCO's phase noise level is -93dBc/Hz at 100kHz offset from a 3.5GHz carrier.
{"title":"Design and analysis of VCO with tunable ring filter","authors":"H. Ishida, K. Araki","doi":"10.1109/MWSYM.2005.1517041","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517041","url":null,"abstract":"To realize a voltage controlled oscillator (VCO) in wireless communications, a device is developed using a new tunable ring filter. The oscillator is based upon the tunable ring filter, with a compact and sharp rejection filter, high performance active inductor. It operates in the 3.2 GHz to 4.1 GHz frequency range. The VCO's phase noise level is -93dBc/Hz at 100kHz offset from a 3.5GHz carrier.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77105011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517141
Jijun Xu, K. Wu
A low-cost, compact, subharmonic self-oscillating mixer integrated with antenna is presented and demonstrated at 30GHz. This novel configuration makes use of substrate integrated waveguide (SIW) cavity as a resonator in the feedback loop to stabilize the fundamental oscillating frequency. This allows the possibility of building a complete planar receiver, with improved phase noise, as an integrated front-end for millimeter wave systems such as radar and wireless sensor network. It is also an attractive structure for MMIC design. A convenient method free from FET amplifier design is proposed in the work for this kind of self-oscillating mixer, which can also be applied in SIW oscillator design. The circuit, implemented as a down-converter, exhibits an average conversion loss of 8.6dB, and an IF phase noise of -86dBc/Hz at 100-kHz offset. The effects of DC variation on the oscillating frequency and the output P/sub 1dB/ gain compression are measured and demonstrated.
{"title":"A subharmonic self-oscillating mixer using substrate integrated waveguide cavity for millimeter-wave application","authors":"Jijun Xu, K. Wu","doi":"10.1109/MWSYM.2005.1517141","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517141","url":null,"abstract":"A low-cost, compact, subharmonic self-oscillating mixer integrated with antenna is presented and demonstrated at 30GHz. This novel configuration makes use of substrate integrated waveguide (SIW) cavity as a resonator in the feedback loop to stabilize the fundamental oscillating frequency. This allows the possibility of building a complete planar receiver, with improved phase noise, as an integrated front-end for millimeter wave systems such as radar and wireless sensor network. It is also an attractive structure for MMIC design. A convenient method free from FET amplifier design is proposed in the work for this kind of self-oscillating mixer, which can also be applied in SIW oscillator design. The circuit, implemented as a down-converter, exhibits an average conversion loss of 8.6dB, and an IF phase noise of -86dBc/Hz at 100-kHz offset. The effects of DC variation on the oscillating frequency and the output P/sub 1dB/ gain compression are measured and demonstrated.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77121439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516865
T. Bolz, B. Neuhaus, A. Beyer
An important task in numerical modeling using 3D-full wave simulators based on the finite element -, the finite difference time domain - or the transmission line matrix (TLM) method is the excitation of infinitesimal dipoles or arbitrary surface current densities. In the case of an infinitesimal dipole excitation the corresponding electromagnetic field is known as Green's function. A method is proposed to excite electric and magnetic surface current densities within an inhomogeneous filled cavity using the TLM method to determine the Green's functions in terms of impedance and admittance functions. It is shown how to deduce equivalent circuits for these impedance and admittance functions, which can be used in commercial circuit simulators.
{"title":"Circuit modeling of resonant modes in MMIC packages using time domain methods","authors":"T. Bolz, B. Neuhaus, A. Beyer","doi":"10.1109/MWSYM.2005.1516865","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516865","url":null,"abstract":"An important task in numerical modeling using 3D-full wave simulators based on the finite element -, the finite difference time domain - or the transmission line matrix (TLM) method is the excitation of infinitesimal dipoles or arbitrary surface current densities. In the case of an infinitesimal dipole excitation the corresponding electromagnetic field is known as Green's function. A method is proposed to excite electric and magnetic surface current densities within an inhomogeneous filled cavity using the TLM method to determine the Green's functions in terms of impedance and admittance functions. It is shown how to deduce equivalent circuits for these impedance and admittance functions, which can be used in commercial circuit simulators.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77827656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516748
Katherine J. Herrick, Kenneth W. Brown, Frederick A. Rose, Colin S. Whelan, J. Kotce, R. Jeffrey, Laroche, Yiwen Zhang, Raytheon
This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.
{"title":"W-band metamorphic HEMT with 267 mW output power","authors":"Katherine J. Herrick, Kenneth W. Brown, Frederick A. Rose, Colin S. Whelan, J. Kotce, R. Jeffrey, Laroche, Yiwen Zhang, Raytheon","doi":"10.1109/MWSYM.2005.1516748","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516748","url":null,"abstract":"This paper reports the highest W-band power output of metamorphic HEMT (MHEMT) technology to date. 267 mW single stage performances at 90 GHz are achieved on a 0.15 micron GaAs-based production line with improved manufacturability over InP HEMT. The single stage circuits presented here are building blocks for future MHEMT power amplifier development.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77920498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516680
K. Mizuno, H. Matono, Y. Wagatsuma, H. Warashina, H. Sato, S. Miyanaga, Y. Yamanaka
A compact wideband millimeter wave detection element for the 35 GHz band has been developed mainly for passive imaging technologies. Using this element, fruit, timber, and foods in cardboard boxes have been observed nondestructively. The thermal radiation emitted from fruit changes as it is ripening, timber with knots and/or damages by white ants, and food temperature in cardboard box can be detected through incoherent passive imaging.
{"title":"New applications of millimeter-wave incoherent imaging","authors":"K. Mizuno, H. Matono, Y. Wagatsuma, H. Warashina, H. Sato, S. Miyanaga, Y. Yamanaka","doi":"10.1109/MWSYM.2005.1516680","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516680","url":null,"abstract":"A compact wideband millimeter wave detection element for the 35 GHz band has been developed mainly for passive imaging technologies. Using this element, fruit, timber, and foods in cardboard boxes have been observed nondestructively. The thermal radiation emitted from fruit changes as it is ripening, timber with knots and/or damages by white ants, and food temperature in cardboard box can be detected through incoherent passive imaging.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77943644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516669
Wenfei Hu, Dou Zhang, M. Lancaster, K. Yeo, T. Button, B. Su
A cost effective phase shifter technology based on ferroelectric thick film fabricated by screen-printing technology is described in this paper. As the demonstration device, a reflection-type phase shifter is designed and fabricated. At 2.2GHz to 2.6GHz band, the reflection-type phase shifter offers an average differential phase shift about 48/spl deg/ with a mean insertion loss of -2.4dB. The biasing DC voltage to achieve this performance is about 100V. This is the first report on screen-printed ferroelectric thick film phase shifter which offers promising device performance.
{"title":"Cost effective ferroelectric thick film phase shifter based on screen-printing technology","authors":"Wenfei Hu, Dou Zhang, M. Lancaster, K. Yeo, T. Button, B. Su","doi":"10.1109/MWSYM.2005.1516669","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516669","url":null,"abstract":"A cost effective phase shifter technology based on ferroelectric thick film fabricated by screen-printing technology is described in this paper. As the demonstration device, a reflection-type phase shifter is designed and fabricated. At 2.2GHz to 2.6GHz band, the reflection-type phase shifter offers an average differential phase shift about 48/spl deg/ with a mean insertion loss of -2.4dB. The biasing DC voltage to achieve this performance is about 100V. This is the first report on screen-printed ferroelectric thick film phase shifter which offers promising device performance.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78137963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517009
H. Sharma, Q. Zhang
A novel technique for modeling the behaviour of two port passive electromagnetic (EM) structures with respect to geometrical and material parameters is introduced. A direct time domain (TD) formulation is proposed that utilizes transient responses of the structure to applied excitation signals as training data for recurrent neural networks (RNN). These EM responses are obtainable from TD EM simulators. Once trained, the RNN macromodel can be inserted into circuit simulators for use in circuit analysis. The RNN macromodel is demonstrated with two examples.
{"title":"Transient electromagnetic modeling using recurrent neural networks","authors":"H. Sharma, Q. Zhang","doi":"10.1109/MWSYM.2005.1517009","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517009","url":null,"abstract":"A novel technique for modeling the behaviour of two port passive electromagnetic (EM) structures with respect to geometrical and material parameters is introduced. A direct time domain (TD) formulation is proposed that utilizes transient responses of the structure to applied excitation signals as training data for recurrent neural networks (RNN). These EM responses are obtainable from TD EM simulators. Once trained, the RNN macromodel can be inserted into circuit simulators for use in circuit analysis. The RNN macromodel is demonstrated with two examples.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79864030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516715
R. Reimann, G. Krimmer, W. Bischof, S. Gerlach
A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel's SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.
{"title":"A single chip SiGe BiCMOS transceiver and SiGe power amplifier for 5.8 GHz WDCT applications","authors":"R. Reimann, G. Krimmer, W. Bischof, S. Gerlach","doi":"10.1109/MWSYM.2005.1516715","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516715","url":null,"abstract":"A fully integrated RF transceiver and power amplifier for 5.8 GHz frequency band operation are presented. The transceiver is composed of a low noise amplifier, low-IF receiver, digital demodulator, fully integrated VCO, PLL, transmitter and 2 dBm output amplifiers. For typical applications in transmit mode, a subsequent 25 dBm power amplifier (PA) is integrated. The PA and the transceiver are fabricated using Atmel's SiGe and SiGe BiCMOS technology, respectively. The transceiver and PA operate from a single lithium battery, avoiding mechanical tuning. The number of external components is drastically reduced compared to previous solutions.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80118563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516694
A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda
A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.
{"title":"A high efficiency, high voltage, balanced cascode FET","authors":"A. Inoue, S. Goto, T. Kunii, T. Ishikawa, Y. Matsuda","doi":"10.1109/MWSYM.2005.1516694","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516694","url":null,"abstract":"A high efficiency, high operating voltage GaAs HFET is presented. A balanced cascode circuit without RF feedback, which achieves the high PAE of 78.2% at 2.1GHz, is proposed. The optimization of a balance capacitor is analyzed theoretically and proved experimentally. This result contributes to the design of high voltage power amplifiers with low breakdown voltage transistors.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76704851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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