Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516890
Shinho Kim, Xiaojing Xu, Y. Wang
A simple, compact and efficient RF pulse compression technique based on a switched resonator concept has been introduced. It utilizes the charging/discharging characteristics of the circuit resonator and can be applied to any other microwave resonators. The approach compresses the duration of the pulse envelope without changing the phase characteristics of the RF carrier. The achievable power efficiency has proven to be sub-optimal which is 1dB lower than the lossless case. A test bed with a microstrip coupled line resonator and a Schottky diode has been fabricated and tested. The experiment demonstrates a 4 to 1 compression ratio. The proposed technique is promising for many RF signal processings such as RF multiplexing in a noise limited scenarios
{"title":"Power efficient RF pulse compression through switched resonators","authors":"Shinho Kim, Xiaojing Xu, Y. Wang","doi":"10.1109/MWSYM.2005.1516890","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516890","url":null,"abstract":"A simple, compact and efficient RF pulse compression technique based on a switched resonator concept has been introduced. It utilizes the charging/discharging characteristics of the circuit resonator and can be applied to any other microwave resonators. The approach compresses the duration of the pulse envelope without changing the phase characteristics of the RF carrier. The achievable power efficiency has proven to be sub-optimal which is 1dB lower than the lossless case. A test bed with a microstrip coupled line resonator and a Schottky diode has been fabricated and tested. The experiment demonstrates a 4 to 1 compression ratio. The proposed technique is promising for many RF signal processings such as RF multiplexing in a noise limited scenarios","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73662353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/mwsym.2005.1516538
N. Joshi, Vara Prasad
Title: Abstract 123 Title: Effect of Supplement Type on the Nutrient Status of Lactating Kiko in Woodlands Abstract 136 Title: Cost of Feeding and Performance of Small Ruminants during the Lean Period of Forage Production Characterization of d-tritipyrum germplasm for salt stress
题目:饲粮添加类型对育成期小反刍动物营养状况的影响摘要136题目:d-三甘菊种质对盐胁迫的特性研究
{"title":"Plenary Session","authors":"N. Joshi, Vara Prasad","doi":"10.1109/mwsym.2005.1516538","DOIUrl":"https://doi.org/10.1109/mwsym.2005.1516538","url":null,"abstract":"Title: Abstract 123 Title: Effect of Supplement Type on the Nutrient Status of Lactating Kiko in Woodlands Abstract 136 Title: Cost of Feeding and Performance of Small Ruminants during the Lean Period of Forage Production Characterization of d-tritipyrum germplasm for salt stress","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81446173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516706
Jeong-Il Kim, Dae-Hee Weon, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi
This paper presents design, fabrication and characterization of three-dimensional (3-D) toroidal inductors using a stressed metal technology developed at Purdue University. The fabricated 31-turn toroidal inductor on high-resistivity silicon substrate shows inductance value of 25.4 nH and peak quality factor of 14.2. Because of the arc deployment of inductor turns, it is found that a sufficiently narrow turn-to-turn gap is essential to achieve high inductance value. In addition, it is found that, even for toroidal inductors, the substrate effects are the dominant loss mechanism at high frequencies and should be suppressed in order to obtain high values of the quality factor.
{"title":"Design of toroidal inductors using stressed metal technology","authors":"Jeong-Il Kim, Dae-Hee Weon, Jong-Hyeok Jeon, S. Mohammadi, L. Katehi","doi":"10.1109/MWSYM.2005.1516706","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516706","url":null,"abstract":"This paper presents design, fabrication and characterization of three-dimensional (3-D) toroidal inductors using a stressed metal technology developed at Purdue University. The fabricated 31-turn toroidal inductor on high-resistivity silicon substrate shows inductance value of 25.4 nH and peak quality factor of 14.2. Because of the arc deployment of inductor turns, it is found that a sufficiently narrow turn-to-turn gap is essential to achieve high inductance value. In addition, it is found that, even for toroidal inductors, the substrate effects are the dominant loss mechanism at high frequencies and should be suppressed in order to obtain high values of the quality factor.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88007846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516839
Young Chul Lee, W. Chang, C. Park
We demonstrate a 36 times 12 times 0.9mm3 sized compact monolithic LTCC SiP transmitter (Tx) for 60GHz-band wireless communication terminal applications. Five GaAs MMICs including mixer, driver amplifier, power amplifier and two of frequency doublers have been integrated onto LTCC multilayer circuit which embeds a stripline BPF and a microstrip patch antenna. A novel CPW-to-stripline transition has been devised integrating air-cavities to minimize the associated attenuation. The fabricated transmitter achieves an output of 9dBm at a RF frequency of 60.4GHz, an IF frequency of 2.4GHz, and a LO frequency of 58GHz. The up-conversion gain is 11.2dB; while the LO signal is suppressed below 33.4dBc, and the spurious signal is also suppressed below 27.4dBc. This is the first report on the LTCC SiP transmitter integrating both a BPF and an antenna. A 60 GHz communication was demonstrated
{"title":"Monolithic LTCC SiP transmitter for 60GHz wireless communication terminals","authors":"Young Chul Lee, W. Chang, C. Park","doi":"10.1109/MWSYM.2005.1516839","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516839","url":null,"abstract":"We demonstrate a 36 times 12 times 0.9mm3 sized compact monolithic LTCC SiP transmitter (Tx) for 60GHz-band wireless communication terminal applications. Five GaAs MMICs including mixer, driver amplifier, power amplifier and two of frequency doublers have been integrated onto LTCC multilayer circuit which embeds a stripline BPF and a microstrip patch antenna. A novel CPW-to-stripline transition has been devised integrating air-cavities to minimize the associated attenuation. The fabricated transmitter achieves an output of 9dBm at a RF frequency of 60.4GHz, an IF frequency of 2.4GHz, and a LO frequency of 58GHz. The up-conversion gain is 11.2dB; while the LO signal is suppressed below 33.4dBc, and the spurious signal is also suppressed below 27.4dBc. This is the first report on the LTCC SiP transmitter integrating both a BPF and an antenna. A 60 GHz communication was demonstrated","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73692033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1616537
R. Levy
Previous work on homogeneous stepped-impedance corrugated filters has been extended to the general inhomogeneous structure, where the waveguide broad dimension is varied in addition to the narrow dimension. It is then possible to design waveguide lowpass filters with specified stopbands free of spurious mode propagation to give rejection levels as high as 100 dB. Additionally, control over the lower cut-off frequency and the ability to match down almost to this frequency facilitates the design of compact waveguide bandpass filters having very broad bandwidths.
{"title":"Inhomogeneous Stepped-Impedance Corrugated Waveguide Low-Pass Filters","authors":"R. Levy","doi":"10.1109/MWSYM.2005.1616537","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1616537","url":null,"abstract":"Previous work on homogeneous stepped-impedance corrugated filters has been extended to the general inhomogeneous structure, where the waveguide broad dimension is varied in addition to the narrow dimension. It is then possible to design waveguide lowpass filters with specified stopbands free of spurious mode propagation to give rejection levels as high as 100 dB. Additionally, control over the lower cut-off frequency and the ability to match down almost to this frequency facilitates the design of compact waveguide bandpass filters having very broad bandwidths.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76271237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516567
E. Schmidhammer, B. Bader, W. Sauer, M. Schmiedgen, H. Heinze, C. Eggs, T. Metzger
Bulk Acoustic Wave (BAW) technology based on the sputtering of piezoelectric thin films on high resistive silicon has recently emerged as one of the preferred technologies for the realization of miniaturized high performance RF filters and duplexers for wireless CDMA-based applications like mobile phones. We present the performance improvements within the development of a duplexer for US-PCS-CDMA applications with a footprint of 3.8mm × 3.8mm and a height of 1.1mm. The duplexer consists of a transmit (TX) and a receive (RX) filter, which are flip-chipped as bare dies on a low temperature co-fired ceramic (LTCC) multilayer substrate incorporating additional matching elements. The filters are realized using solidly mounted resonator (SMR) technology, where an acoustic mirror separates the active resonator from the substrate. Duplexer packaging is based on the EPCOS’ proprietary CSSP technology, originally developed to further shrink the size of SAW devices. This technology includes a cavity between the package and the acoustically active filter areas and therefore keeps the surface of the active device protected from environmental influences. The front-end technology for realizing the RF filters uses standard 200 mm CMOS technology and the deposition of AlN piezoelectric thin films with high thickness uniformity over the wafer. The duplexer is fully matched to 50 Ohm with low insertion attenuation in the pass band, a superior stop band characteristic up to 10 GHz, and a temperature coefficient of frequency (TCF) of −20 ppm/K.
基于高阻硅上压电薄膜溅射的体声波(BAW)技术最近成为实现基于移动电话等无线cdma应用的小型化高性能射频滤波器和双工器的首选技术之一。我们提出了一种用于US-PCS-CDMA应用的双工器的性能改进，其占地面积为3.8mm × 3.8mm，高度为1.1mm。双工器由一个发射(TX)和一个接收(RX)滤波器组成，它们作为裸晶片倒装在低温共烧陶瓷(LTCC)多层基板上，并包含额外的匹配元件。滤波器采用固体安装谐振器(SMR)技术实现，其中声镜将有源谐振器与衬底分离。双工封装基于爱普科斯专有的CSSP技术，最初是为了进一步缩小SAW器件的尺寸而开发的。该技术包括封装和声学有源滤波器区域之间的空腔，因此可以保护有源器件的表面免受环境影响。实现射频滤波器的前端技术采用标准的200 mm CMOS技术，并在晶圆上沉积具有高厚度均匀性的AlN压电薄膜。该双工器与50欧姆完全匹配，通带插入衰减低，阻带特性高达10 GHz，频率温度系数(TCF)为- 20 ppm/K。
{"title":"Design Flow and Methodology on the Design of BAW components","authors":"E. Schmidhammer, B. Bader, W. Sauer, M. Schmiedgen, H. Heinze, C. Eggs, T. Metzger","doi":"10.1109/MWSYM.2005.1516567","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516567","url":null,"abstract":"Bulk Acoustic Wave (BAW) technology based on the sputtering of piezoelectric thin films on high resistive silicon has recently emerged as one of the preferred technologies for the realization of miniaturized high performance RF filters and duplexers for wireless CDMA-based applications like mobile phones. We present the performance improvements within the development of a duplexer for US-PCS-CDMA applications with a footprint of 3.8mm × 3.8mm and a height of 1.1mm. The duplexer consists of a transmit (TX) and a receive (RX) filter, which are flip-chipped as bare dies on a low temperature co-fired ceramic (LTCC) multilayer substrate incorporating additional matching elements. The filters are realized using solidly mounted resonator (SMR) technology, where an acoustic mirror separates the active resonator from the substrate. Duplexer packaging is based on the EPCOS’ proprietary CSSP technology, originally developed to further shrink the size of SAW devices. This technology includes a cavity between the package and the acoustically active filter areas and therefore keeps the surface of the active device protected from environmental influences. The front-end technology for realizing the RF filters uses standard 200 mm CMOS technology and the deposition of AlN piezoelectric thin films with high thickness uniformity over the wafer. The duplexer is fully matched to 50 Ohm with low insertion attenuation in the pass band, a superior stop band characteristic up to 10 GHz, and a temperature coefficient of frequency (TCF) of −20 ppm/K.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86563699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MTT67880.2005.9387798
A. Platzker, J. Heaton
New state of the art power and efficiency results are documented for high power GaN HFETs in this session. New passivation schemes and dynamic gate bias technique are described, together with an experimental dispersion investigation and very high temperature operation.
{"title":"Session WE1E: High-Power GaN Devices","authors":"A. Platzker, J. Heaton","doi":"10.1109/MTT67880.2005.9387798","DOIUrl":"https://doi.org/10.1109/MTT67880.2005.9387798","url":null,"abstract":"New state of the art power and efficiency results are documented for high power GaN HFETs in this session. New passivation schemes and dynamic gate bias technique are described, together with an experimental dispersion investigation and very high temperature operation.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88487250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MTT67880.2005.9387836
R. Eisenhart
This session is an opportunity to show our deep respect and admiration for Don Parker who recently passed away. Although Don is credited with innumerable contributions to the MTT-S, he is best reminded for his soft-spoken ways of accomplishing things and getting others involved. Several of Don's friends and associates will say a few words in remembrance.
{"title":"Session TU3E: Focussed Session: Memorial Session for Don Parker","authors":"R. Eisenhart","doi":"10.1109/MTT67880.2005.9387836","DOIUrl":"https://doi.org/10.1109/MTT67880.2005.9387836","url":null,"abstract":"This session is an opportunity to show our deep respect and admiration for Don Parker who recently passed away. Although Don is credited with innumerable contributions to the MTT-S, he is best reminded for his soft-spoken ways of accomplishing things and getting others involved. Several of Don's friends and associates will say a few words in remembrance.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82620328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516894
J. Gu, Xiaowei Sun
In this paper, a compensated spiral compact microstrip resonant cell (SCMRC) is applied to design a miniaturized microstrip rat-race and branch-line hybrid coupler. The proposed structures can achieve both a significant reduction of size and harmonic suppression. As the SCMRC are constructed entirely from microstrip lines, the couplers are easily fabricated using conventional printed-circuit board fabrication process. The proposed rat-race coupler occupies only 30% of conventional one's area, while the area of the branch-line coupler with the compensated SCMRC is 24% of the conventional case. On the other hand, the performance of the proposed couplers is as good as that of the corresponding conventional structures and deep harmonic suppression in addition. The design and simulation have been performed using full-wave analysis based on ADS Momentum
{"title":"Miniaturization and harmonic suppression of branch-line and rat-race hybrid coupler using compensated spiral compact microstrip resonant cell","authors":"J. Gu, Xiaowei Sun","doi":"10.1109/MWSYM.2005.1516894","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516894","url":null,"abstract":"In this paper, a compensated spiral compact microstrip resonant cell (SCMRC) is applied to design a miniaturized microstrip rat-race and branch-line hybrid coupler. The proposed structures can achieve both a significant reduction of size and harmonic suppression. As the SCMRC are constructed entirely from microstrip lines, the couplers are easily fabricated using conventional printed-circuit board fabrication process. The proposed rat-race coupler occupies only 30% of conventional one's area, while the area of the branch-line coupler with the compensated SCMRC is 24% of the conventional case. On the other hand, the performance of the proposed couplers is as good as that of the corresponding conventional structures and deep harmonic suppression in addition. The design and simulation have been performed using full-wave analysis based on ADS Momentum","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88828219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-17DOI: 10.1109/MWSYM.2005.1516921
K. Naishadham, J. Piou
We report characterization of an open dielectric resonator with Q of 4000 to 7000 in the 25-40 GHz frequency range. Because of its small size, the measured parameters are very sensitive to background noise contributed by the coupling mechanism, package modes, radiation, etc. Therefore, it becomes important to properly calibrate out this parasitic influence in order to accurately measure the unloaded Q factor of the resonator. We report an accurate software calibration procedure based on a state-space spectral estimation algorithm, which effectively filters out the background noise and facilitates linear extraction of the unloaded Q
{"title":"Signal model to extract intrinsic parameters of high-Q dielectric resonators from noisy measurements","authors":"K. Naishadham, J. Piou","doi":"10.1109/MWSYM.2005.1516921","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516921","url":null,"abstract":"We report characterization of an open dielectric resonator with Q of 4000 to 7000 in the 25-40 GHz frequency range. Because of its small size, the measured parameters are very sensitive to background noise contributed by the coupling mechanism, package modes, radiation, etc. Therefore, it becomes important to properly calibrate out this parasitic influence in order to accurately measure the unloaded Q factor of the resonator. We report an accurate software calibration procedure based on a state-space spectral estimation algorithm, which effectively filters out the background noise and facilitates linear extraction of the unloaded Q","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83709753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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