Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516791
Yilong Shen, J. Tauritz
Traditionally, Taylor series models are only used under small signal or mildly nonlinear regimes. In this paper, a new behavioral model for microwave power amplifiers (PAs) based on first order Taylor expansion of multivariable nonlinearities and interpolation is proposed. The model is tailored for PAs driven by wideband, highly dynamic stimuli. Theoretical comparisons are made between this model and several other representative behavioral models. A mathematical simulation experiment designed for validation purposes is discussed.
{"title":"A new pa behavioral model based on the linearization of multivariable nonlinearities and interpolation","authors":"Yilong Shen, J. Tauritz","doi":"10.1109/MWSYM.2005.1516791","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516791","url":null,"abstract":"Traditionally, Taylor series models are only used under small signal or mildly nonlinear regimes. In this paper, a new behavioral model for microwave power amplifiers (PAs) based on first order Taylor expansion of multivariable nonlinearities and interpolation is proposed. The model is tailored for PAs driven by wideband, highly dynamic stimuli. Theoretical comparisons are made between this model and several other representative behavioral models. A mathematical simulation experiment designed for validation purposes is discussed.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81486434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516872
D. Saraswat, R. Achar, M. Nakhla
Circuit modeling of networks described by tabulated S-parameters has generated immense interest during the recent years. The tabulated data may be obtained either from measurements or full-wave EM simulations. However, one of the major difficulties with such type of data is that, the data can be non-passive in the frequency bandwidth of interest, due to the measurement errors or the numerical errors associated with the full-wave simulator. This causes significant difficulty while interfacing such a data with circuit simulators. To overcome this difficulty, this paper presents an efficient algorithm for restoring the passivity of the S-parameter data, prior to its circuit modeling. Numerical examples are presented to demonstrate the validity and efficiency of the proposed algorithm.
{"title":"Restoration of passivity in s-parameter data of microwave measurements","authors":"D. Saraswat, R. Achar, M. Nakhla","doi":"10.1109/MWSYM.2005.1516872","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516872","url":null,"abstract":"Circuit modeling of networks described by tabulated S-parameters has generated immense interest during the recent years. The tabulated data may be obtained either from measurements or full-wave EM simulations. However, one of the major difficulties with such type of data is that, the data can be non-passive in the frequency bandwidth of interest, due to the measurement errors or the numerical errors associated with the full-wave simulator. This causes significant difficulty while interfacing such a data with circuit simulators. To overcome this difficulty, this paper presents an efficient algorithm for restoring the passivity of the S-parameter data, prior to its circuit modeling. Numerical examples are presented to demonstrate the validity and efficiency of the proposed algorithm.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78851706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516668
O. Tageman, S. Gevorgian, D. Iddles, P. Filhol, V. Sherman, A. Tagantsev, L. Carlsson
We report the microwave characterization of a bulk ferroelectric beam steering device. The device consists of a 1 mm thick BST core tile with ceramic quarter wave transformer plates on both sides. Electrodes and edges of the device were encapsulated in silicone rubber to avoid break down at high DC fields. A horn-to-horn transmission set-up was used to measure the phase tuning and insertion loss. By the application of a DC-field ranging from 0-15 kV/mm, we measured a phase tuning of 0-386 degrees at 30 GHz. The corresponding insertion loss was 5.8 dB at zero DC-field and dropped to 2.1 dB at 15 kV/mm. Using a 8 kV/mm DC-field as a bias point, which is relevant in the center of the antenna in our beam scanning application, we get a figure of merit of 124 degrees/dB. We find that the permittivity is frequency independent in the range 25-40 GHz, and that the loss tangent is proportional to the frequency. When decreasing the field back to zero we found that the permittivity remained 12% lower than initial measurement. The origin of this memory effect is at present not well understood, but among possible explanations we see self-heating, trapping/de-trapping of charges and ferroelectric inclusions.
{"title":"Demonstration of 124 deg/dB phase tuning at 30 GHz for a bulk ferroelectric beam steering device","authors":"O. Tageman, S. Gevorgian, D. Iddles, P. Filhol, V. Sherman, A. Tagantsev, L. Carlsson","doi":"10.1109/MWSYM.2005.1516668","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516668","url":null,"abstract":"We report the microwave characterization of a bulk ferroelectric beam steering device. The device consists of a 1 mm thick BST core tile with ceramic quarter wave transformer plates on both sides. Electrodes and edges of the device were encapsulated in silicone rubber to avoid break down at high DC fields. A horn-to-horn transmission set-up was used to measure the phase tuning and insertion loss. By the application of a DC-field ranging from 0-15 kV/mm, we measured a phase tuning of 0-386 degrees at 30 GHz. The corresponding insertion loss was 5.8 dB at zero DC-field and dropped to 2.1 dB at 15 kV/mm. Using a 8 kV/mm DC-field as a bias point, which is relevant in the center of the antenna in our beam scanning application, we get a figure of merit of 124 degrees/dB. We find that the permittivity is frequency independent in the range 25-40 GHz, and that the loss tangent is proportional to the frequency. When decreasing the field back to zero we found that the permittivity remained 12% lower than initial measurement. The origin of this memory effect is at present not well understood, but among possible explanations we see self-heating, trapping/de-trapping of charges and ferroelectric inclusions.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76084813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516563
R. Ruby, J. Larson, C. Feng, S. Fazzio
We describe the first four Lamb-Rayleigh modes seen in an FBAR resonator. We also describe the effect of apodization (non parallel edges) have on the kx-ky space as compared to square resonators.
{"title":"The Effect of Perimeter Geometry on FBAR Resonator Electrical Performance","authors":"R. Ruby, J. Larson, C. Feng, S. Fazzio","doi":"10.1109/MWSYM.2005.1516563","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516563","url":null,"abstract":"We describe the first four Lamb-Rayleigh modes seen in an FBAR resonator. We also describe the effect of apodization (non parallel edges) have on the kx-ky space as compared to square resonators.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86234088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516650
R. Bairavasubramanian, S. Pinel, J. Papapolymerou, J. Laskar, C. Quendo, É. Rius, A. Manchec, C. Person
This paper presents the development and performance of several dual-band filters for wireless local area network (WLAN) applications. Three dual-band filters meeting the specifications of 802.11 bg (2.412-2.484 GHz) for the lower band and the specifications of 802.11 a-L (5.180-5.320 GHz), 802.11 a-H (5.745-5.805 GHz) and 802.11 a-L&H (5.180-5.805 GHz) for the upper band are presented. These filters are developed based on dual behavior resonator (DBR) topology in combination with a new stepped impedance approach and are implemented for the first time on liquid crystal polymer (LCP) technology. LCP has been chosen because of its low cost, good RF performance and its ability to act both as a substrate and a package. Measurements show a very low insertion loss of -1.25 dB for the lower band and an insertion loss of -2.4 dB and -1.1 dB for the narrow and broad upper bands respectively. This work demonstrates that the proposed design methodology is simple, efficient and allows easy tuning of the filter parameters to suit different specifications.
{"title":"Dual-band filters for WLAN applications on liquid crystal polymer technology","authors":"R. Bairavasubramanian, S. Pinel, J. Papapolymerou, J. Laskar, C. Quendo, É. Rius, A. Manchec, C. Person","doi":"10.1109/MWSYM.2005.1516650","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516650","url":null,"abstract":"This paper presents the development and performance of several dual-band filters for wireless local area network (WLAN) applications. Three dual-band filters meeting the specifications of 802.11 bg (2.412-2.484 GHz) for the lower band and the specifications of 802.11 a-L (5.180-5.320 GHz), 802.11 a-H (5.745-5.805 GHz) and 802.11 a-L&H (5.180-5.805 GHz) for the upper band are presented. These filters are developed based on dual behavior resonator (DBR) topology in combination with a new stepped impedance approach and are implemented for the first time on liquid crystal polymer (LCP) technology. LCP has been chosen because of its low cost, good RF performance and its ability to act both as a substrate and a package. Measurements show a very low insertion loss of -1.25 dB for the lower band and an insertion loss of -2.4 dB and -1.1 dB for the narrow and broad upper bands respectively. This work demonstrates that the proposed design methodology is simple, efficient and allows easy tuning of the filter parameters to suit different specifications.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86328254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517198
J. Comeau, J. Cressler
This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.
{"title":"Microwave VCO susceptibility to substrate noise in a fully-integrated 150 GHz SiGe HBT BiCMOS technology","authors":"J. Comeau, J. Cressler","doi":"10.1109/MWSYM.2005.1517198","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517198","url":null,"abstract":"This work presents two K-band voltage controlled oscillators (VCO) implemented in a fully-integrated SiGe HBT BiCMOS technology, and analyzes their susceptibility to substrate noise. The two VCOs are identical in design, with one utilizing a spiral inductor for the resonant tank, and the other incorporating a thin film microstrip transmission line. Both VCOs exhibit significant (but different) substrate coupling behavior and performance degradation with the injection of parasitic substrate noise. An explanation of the coupling differences between the two VCOs and its relationship to VCO phase noise degradation versus control voltage, and the overall VCO design implications, are addressed.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83903339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517067
M. Ma, R. Khazaka
This paper presents a method of model order reduction (MOR) for linear interconnect systems with large numbers of output ports. Model order reduction techniques have proven to be very effective for the simulation of large interconnect networks. However, using current MOR techniques, the size of the reduced system grows rapidly as the number of ports increase. This leads to a severe reduction in efficiency. In this paper, a reduction method is proposed, which is based on imposing practical restrictions on the loads that can be connected to the ports of the network. By exploiting the information on the output ports and utilizing parametric model order reduction techniques, the resulting reduced model is much less sensitive to the number of ports and therefore is significantly smaller than standard reduced models. Examples are presented that demonstrate the accuracy and efficiency of the new method.
{"title":"Passive model order reduction for interconnect networks with large number of ports","authors":"M. Ma, R. Khazaka","doi":"10.1109/MWSYM.2005.1517067","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517067","url":null,"abstract":"This paper presents a method of model order reduction (MOR) for linear interconnect systems with large numbers of output ports. Model order reduction techniques have proven to be very effective for the simulation of large interconnect networks. However, using current MOR techniques, the size of the reduced system grows rapidly as the number of ports increase. This leads to a severe reduction in efficiency. In this paper, a reduction method is proposed, which is based on imposing practical restrictions on the loads that can be connected to the ports of the network. By exploiting the information on the output ports and utilizing parametric model order reduction techniques, the resulting reduced model is much less sensitive to the number of ports and therefore is significantly smaller than standard reduced models. Examples are presented that demonstrate the accuracy and efficiency of the new method.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86787120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517179
T. Barbier, D. Caban-Chastas, V. Rananjason, P. Kertesz
This paper describes packages solutions developed to integrate MMICs which operate from 2GHz to 20GHz. These chip scale nonhermetic packages are made up of organic based material and are dedicated to assembly onto organic multilayers. Three solutions are presented, two involving ball grid array (BGA) interfaces, and one using a lead frame for thermal dissipation requirements. This last one enables to integrate high power dissipation (about 10W) MMIC. The RF transition improvement is described and performance obtained by measuring packaged MMICs with these solutions is presented. Environmental evaluation results are discussed for the based lead frame interface package. Finally, a 3D package taking benefits from the solutions firstly developed is presented.
{"title":"Wide band organic solutions for MMIC packaging","authors":"T. Barbier, D. Caban-Chastas, V. Rananjason, P. Kertesz","doi":"10.1109/MWSYM.2005.1517179","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517179","url":null,"abstract":"This paper describes packages solutions developed to integrate MMICs which operate from 2GHz to 20GHz. These chip scale nonhermetic packages are made up of organic based material and are dedicated to assembly onto organic multilayers. Three solutions are presented, two involving ball grid array (BGA) interfaces, and one using a lead frame for thermal dissipation requirements. This last one enables to integrate high power dissipation (about 10W) MMIC. The RF transition improvement is described and performance obtained by measuring packaged MMICs with these solutions is presented. Environmental evaluation results are discussed for the based lead frame interface package. Finally, a 3D package taking benefits from the solutions firstly developed is presented.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89197431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1516830
Songnan Yang, A. Fathy
We have developed a simple and efficient procedure to design H-plane rectangular waveguide T-junctions for equal and unequal two-way power splitters. This synthesis procedure is scalable, renders manufacturable structures, applicable to any arbitrary power split-ratio, and can offer wide band operation. In our implementation, we utilized wedges and inductive windows (being an integral part of the T-junctions), to provide more degrees of freedom, thus, excellent match at the input port, flat power-split ratio over the band with equal phase, where phase balance is essential for various antenna feeds.
{"title":"Synthesis of a compound T-junction for a two-way splitter with arbitrary power ratio","authors":"Songnan Yang, A. Fathy","doi":"10.1109/MWSYM.2005.1516830","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1516830","url":null,"abstract":"We have developed a simple and efficient procedure to design H-plane rectangular waveguide T-junctions for equal and unequal two-way power splitters. This synthesis procedure is scalable, renders manufacturable structures, applicable to any arbitrary power split-ratio, and can offer wide band operation. In our implementation, we utilized wedges and inductive windows (being an integral part of the T-junctions), to provide more degrees of freedom, thus, excellent match at the input port, flat power-split ratio over the band with equal phase, where phase balance is essential for various antenna feeds.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91499859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-06-12DOI: 10.1109/MWSYM.2005.1517190
Il-Soo Kim, Young‐Hoon Chun, S. Yun
This paper presents a novel active capacitance circuit using BJT and RLC series-feedback. It is competitive in the noise performance and the stability by adjusting the feedback elements. We analyze its characteristics in detail and apply it to an RF application by designing a duplexer. The active capacitance circuit can replace the passive capacitors of resonators in Rx and Tx BPF, which provide negative resistance to compensate for parasitic resistance of inductors. With the detailed analysis, we can obtain the frequency range as well as the maximum value of negative resistance. The active duplexer is designed realized at cellular at Rx (824/spl sim/849 MHz) and Tx (869/spl sim/894 MHz) bands.
{"title":"Analysis of a novel active capacitance circuit using BJT and its application to RF bandpass filters","authors":"Il-Soo Kim, Young‐Hoon Chun, S. Yun","doi":"10.1109/MWSYM.2005.1517190","DOIUrl":"https://doi.org/10.1109/MWSYM.2005.1517190","url":null,"abstract":"This paper presents a novel active capacitance circuit using BJT and RLC series-feedback. It is competitive in the noise performance and the stability by adjusting the feedback elements. We analyze its characteristics in detail and apply it to an RF application by designing a duplexer. The active capacitance circuit can replace the passive capacitors of resonators in Rx and Tx BPF, which provide negative resistance to compensate for parasitic resistance of inductors. With the detailed analysis, we can obtain the frequency range as well as the maximum value of negative resistance. The active duplexer is designed realized at cellular at Rx (824/spl sim/849 MHz) and Tx (869/spl sim/894 MHz) bands.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90350838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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