Pub Date : 2022-01-01DOI: 10.1587/transele.2021rep0001
N. Ta, H. Shirai
{"title":"On the Asymptotic Evaluation of the Physical Optics Approximation for Plane Wave Scattering by Circular Conducting Cylinders","authors":"N. Ta, H. Shirai","doi":"10.1587/transele.2021rep0001","DOIUrl":"https://doi.org/10.1587/transele.2021rep0001","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"36 1","pages":"128-136"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85566804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5024
J. Kamioka, Yoshifumi Kawamura, Ryota Komaru, M. Hangai, Y. Kamo, Tetsuo Kodera, S. Shinjo
SUMMARY This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-e ff ective 20W transmit-receive (T / R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power ampli-fier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T / R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4–7.4W, an associate gain of 22.3–24.6dB and a power added e ffi ciency (PAE) of 32–36% over 9.0– 11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20–28W, associate gain of 7.8–10.7dB, and a PAE of 40– 56% over 9.0–11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15–30W, associate gain of 27–30dB, and PAE of 26–33% over 9.0–11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1–1.3dB and isolation of 10.1– 14.7dB over 8.0–11.5GHz. By employing cost-e ff ective circuit configu-rations, the costs of these chipsets are estimated to be about half that of conventional chipsets
{"title":"X-Band GaN Chipsets for Cost-Effective 20W T/R Modules","authors":"J. Kamioka, Yoshifumi Kawamura, Ryota Komaru, M. Hangai, Y. Kamo, Tetsuo Kodera, S. Shinjo","doi":"10.1587/transele.2021ecp5024","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5024","url":null,"abstract":"SUMMARY This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-e ff ective 20W transmit-receive (T / R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power ampli-fier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T / R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4–7.4W, an associate gain of 22.3–24.6dB and a power added e ffi ciency (PAE) of 32–36% over 9.0– 11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20–28W, associate gain of 7.8–10.7dB, and a PAE of 40– 56% over 9.0–11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15–30W, associate gain of 27–30dB, and PAE of 26–33% over 9.0–11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1–1.3dB and isolation of 10.1– 14.7dB over 8.0–11.5GHz. By employing cost-e ff ective circuit configu-rations, the costs of these chipsets are estimated to be about half that of conventional chipsets","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"44 1","pages":"194-202"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85978954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ctp0001
T. Iizuka, Meikan Chin, T. Nakura, K. Asada
SUMMARY This paper proposes a reference-clock-less quick-start-up CDR that resumes from a stand-by state only with a 4-bit preamble utilizing a phase generator with an embedded Time-to-Digital Converter (TDC). The phase generator detects 1-UI time interval by using its internal TDC and works as a self-tunable digitally-controlled delay line. Once the phase gen- erator coarsely tunes the recovered clock period, then the residual time difference is finely tuned by a fine Digital-to-Time Converter (DTC). Since the tuning resolution of the fine DTC is matched by design with the time resolution of the TDC that is used as a phase detector, the fine tuning completes instantaneously. After the initial coarse and fine delay tuning, the feedback loop for frequency tracking is activated in order to improve Consecutive Identical Digits (CID) tolerance of the CDR. By applying the frequency tracking architecture, the proposed CDR achieves more than 100bits of CID tolerance. A prototype implemented in a 65nm bulk CMOS process operates at a 0.9 − 2.15Gbps continuous rate. It consumes 5.1 − 8.4mA in its active state and 42µA leakage current in its stand-by state from a 1.0V supply. key words: Clock-and-data recovery (CDR),
{"title":"4-Cycle-Start-Up Reference-Clock-Less Digital CDR Utilizing TDC-Based Initial Frequency Error Detection with Frequency Tracking Loop","authors":"T. Iizuka, Meikan Chin, T. Nakura, K. Asada","doi":"10.1587/transele.2021ctp0001","DOIUrl":"https://doi.org/10.1587/transele.2021ctp0001","url":null,"abstract":"SUMMARY This paper proposes a reference-clock-less quick-start-up CDR that resumes from a stand-by state only with a 4-bit preamble utilizing a phase generator with an embedded Time-to-Digital Converter (TDC). The phase generator detects 1-UI time interval by using its internal TDC and works as a self-tunable digitally-controlled delay line. Once the phase gen- erator coarsely tunes the recovered clock period, then the residual time difference is finely tuned by a fine Digital-to-Time Converter (DTC). Since the tuning resolution of the fine DTC is matched by design with the time resolution of the TDC that is used as a phase detector, the fine tuning completes instantaneously. After the initial coarse and fine delay tuning, the feedback loop for frequency tracking is activated in order to improve Consecutive Identical Digits (CID) tolerance of the CDR. By applying the frequency tracking architecture, the proposed CDR achieves more than 100bits of CID tolerance. A prototype implemented in a 65nm bulk CMOS process operates at a 0.9 − 2.15Gbps continuous rate. It consumes 5.1 − 8.4mA in its active state and 42µA leakage current in its stand-by state from a 1.0V supply. key words: Clock-and-data recovery (CDR),","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"79 1","pages":"544-551"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83917774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021rep0002
Masahiro Tanaka
{"title":"Volume Integral Equations Combined with Orthogonality of Modes for Analysis of Two-Dimensional Optical Slab Waveguide","authors":"Masahiro Tanaka","doi":"10.1587/transele.2021rep0002","DOIUrl":"https://doi.org/10.1587/transele.2021rep0002","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"21 1","pages":"137-145"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84240533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5030
H. Suzuki, T. Funaki
{"title":"Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver","authors":"H. Suzuki, T. Funaki","doi":"10.1587/transele.2021ecp5030","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5030","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"52 1","pages":"750-760"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82207799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2022mmi0006
K. Nakatani, Y. Yamaguchi, Takuma Torii, M. Tsuru
SUMMARY GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping e ff ects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.
{"title":"A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications","authors":"K. Nakatani, Y. Yamaguchi, Takuma Torii, M. Tsuru","doi":"10.1587/transele.2022mmi0006","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0006","url":null,"abstract":"SUMMARY GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping e ff ects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"26 1","pages":"433-440"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84142015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2022mmp0005
Yasunori Suzuki, T. Hirota, T. Nojima
{"title":"Multi-Port Amplifier with Enhanced Linearity and Isolation Employing Feed-Forward Techniques","authors":"Yasunori Suzuki, T. Hirota, T. Nojima","doi":"10.1587/transele.2022mmp0005","DOIUrl":"https://doi.org/10.1587/transele.2022mmp0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"35 1","pages":"501-508"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80500939","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2022emp0001
Kiyoshi Kamimura, Y. Fujimaki, Haruki Hoshikawa, Kazuki Imaizumi, K. Izawa, R. Nagase
SUMMARY Multi-core fiber (MCF) is one of the most promising can- didates for achieving ultra-wideband optical transmission in the near fu-ture. To build a network using MCF, a high-performance and reliable MCF connector is indispensable. We have developed an SC-type optical connector for MCF and confirmed its excellent optical performance, mechanical durability, and environmental reliability. To put the communication system using MCF into practical use, it is necessary to establish a procedure for measuring the initial connection characteristics. Fan-in / fan-out (FIFO) devices are indispensable for measuring the connection characteristics of MCF connectors. To measure the return loss of the MCF connector, it is necessary to remove the influence of reflection at the FIFO itself and at the connection points with the FIFO. In this paper, we compare four types of return loss measurement procedures (three usual method and a new method we proposed) and find that most stable measurement method involves using our new method, the OCWR method without FIFO. The OCWR method without FIFO is considered to be the most advantageous when used for outgoing inspection of connectors. The reason is that it eliminates the mea- surement uncertainty caused by the FIFO and enables speedy measurement.
{"title":"Return Loss Measurement Procedure for Multicore Fiber Connectors","authors":"Kiyoshi Kamimura, Y. Fujimaki, Haruki Hoshikawa, Kazuki Imaizumi, K. Izawa, R. Nagase","doi":"10.1587/transele.2022emp0001","DOIUrl":"https://doi.org/10.1587/transele.2022emp0001","url":null,"abstract":"SUMMARY Multi-core fiber (MCF) is one of the most promising can- didates for achieving ultra-wideband optical transmission in the near fu-ture. To build a network using MCF, a high-performance and reliable MCF connector is indispensable. We have developed an SC-type optical connector for MCF and confirmed its excellent optical performance, mechanical durability, and environmental reliability. To put the communication system using MCF into practical use, it is necessary to establish a procedure for measuring the initial connection characteristics. Fan-in / fan-out (FIFO) devices are indispensable for measuring the connection characteristics of MCF connectors. To measure the return loss of the MCF connector, it is necessary to remove the influence of reflection at the FIFO itself and at the connection points with the FIFO. In this paper, we compare four types of return loss measurement procedures (three usual method and a new method we proposed) and find that most stable measurement method involves using our new method, the OCWR method without FIFO. The OCWR method without FIFO is considered to be the most advantageous when used for outgoing inspection of connectors. The reason is that it eliminates the mea- surement uncertainty caused by the FIFO and enables speedy measurement.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"2016 1","pages":"721-728"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89895585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021fup0006
K. Makihara, T. Takemoto, Shuji Obayashi, A. Ohta, N. Taoka, S. Miyazaki
{"title":"Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures","authors":"K. Makihara, T. Takemoto, Shuji Obayashi, A. Ohta, N. Taoka, S. Miyazaki","doi":"10.1587/transele.2021fup0006","DOIUrl":"https://doi.org/10.1587/transele.2021fup0006","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"39 1","pages":"610-615"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90049677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021res0001
R. Ozaki, T. Yamasaki
SUMMARY In our previous paper, we have proposed a new numerical technique for transient scattering problem of periodically arrayed dispersion media by using a combination of the fast inversion Laplace transform (FILT) method and Fourier series expansion method (FSEM), and analyzed the pulse response for several widths of the dispersion media or rectangular cavities. From the numerical results, we examined the influence of a periodically arrayed dispersion media with a rectangular cavity on the pulse response. In this paper, we analyzed the transient scattering problem for the case of dispersion media with slanted air regions by utilizing a combination of the FILT, FSEM, and multilayer division method (MDM), and investigated an influence for the slanted angle of an air region. In addition, we verified the computational accuracy for term of the MDM and truncation mode number of the electromagnetic fields.
{"title":"Numerical Analysis of Pulse Response for Slanted Grating Structure with an Air Regions in Dispersion Media by TE Case","authors":"R. Ozaki, T. Yamasaki","doi":"10.1587/transele.2021res0001","DOIUrl":"https://doi.org/10.1587/transele.2021res0001","url":null,"abstract":"SUMMARY In our previous paper, we have proposed a new numerical technique for transient scattering problem of periodically arrayed dispersion media by using a combination of the fast inversion Laplace transform (FILT) method and Fourier series expansion method (FSEM), and analyzed the pulse response for several widths of the dispersion media or rectangular cavities. From the numerical results, we examined the influence of a periodically arrayed dispersion media with a rectangular cavity on the pulse response. In this paper, we analyzed the transient scattering problem for the case of dispersion media with slanted air regions by utilizing a combination of the FILT, FSEM, and multilayer division method (MDM), and investigated an influence for the slanted angle of an air region. In addition, we verified the computational accuracy for term of the MDM and truncation mode number of the electromagnetic fields.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"15 1","pages":"154-158"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82513101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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