Pub Date : 2022-01-01DOI: 10.1587/transele.2021ess0001
K. Fujita
{"title":"Convergence of the Hybrid Implicit-Explicit Single-Field FDTD Method Based on the Wave Equation of Electric Field","authors":"K. Fujita","doi":"10.1587/transele.2021ess0001","DOIUrl":"https://doi.org/10.1587/transele.2021ess0001","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87177414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ess0002
T. Hirano
SUMMARY In this paper, the author performed an electromagnetic field simulation of a typical bonding wire structure that connects a chip and a package, and evaluated the signal transmission characteristics (S- parameters). In addition, the inductance per unit length was extracted by comparing with the equivalent circuit of the distributed constant line. It turns out that the distributed constant line model is not su ffi cient because there are frequencies where chip-package resonance occurs. Below the res- onance frequency, the conventional low-frequency approximation model was e ff ective, and it was found that the inductance was about 1nH / mm.
{"title":"Evaluation and Extraction of Equivalent Circuit Parameters for GSG-Type Bonding Wires Using Electromagnetic Simulator","authors":"T. Hirano","doi":"10.1587/transele.2021ess0002","DOIUrl":"https://doi.org/10.1587/transele.2021ess0002","url":null,"abstract":"SUMMARY In this paper, the author performed an electromagnetic field simulation of a typical bonding wire structure that connects a chip and a package, and evaluated the signal transmission characteristics (S- parameters). In addition, the inductance per unit length was extracted by comparing with the equivalent circuit of the distributed constant line. It turns out that the distributed constant line model is not su ffi cient because there are frequencies where chip-package resonance occurs. Below the res- onance frequency, the conventional low-frequency approximation model was e ff ective, and it was found that the inductance was about 1nH / mm.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85430957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5051
T. Kawano, K. Goto
{"title":"Interpretation Method of Inversion Phenomena on Backward Transient Scattered Field Components by a Coated Metal Cylinder","authors":"T. Kawano, K. Goto","doi":"10.1587/transele.2021ecp5051","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5051","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85450596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021fus0006
K. Aikawa, M. Suhara, Takumi Kimura, Junki Wakayama, Takeshi Makino, Katsuhiro Usui, K. Asakawa, K. Akahane, I. Watanabe
{"title":"Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes","authors":"K. Aikawa, M. Suhara, Takumi Kimura, Junki Wakayama, Takeshi Makino, Katsuhiro Usui, K. Asakawa, K. Akahane, I. Watanabe","doi":"10.1587/transele.2021fus0006","DOIUrl":"https://doi.org/10.1587/transele.2021fus0006","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89944641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021cts0001
Guowei Chen, Xujiaming Chen, K. Niitsu
{"title":"Design and Experimental Verification of a 2.1nW 0.018mm2 Slope ADC-Based Supply Voltage Monitor for Biofuel-Cell-Powered Supply-Sensing Systems in 180-nm CMOS","authors":"Guowei Chen, Xujiaming Chen, K. Niitsu","doi":"10.1587/transele.2021cts0001","DOIUrl":"https://doi.org/10.1587/transele.2021cts0001","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85836513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021sep0005
T. Kawaguchi, N. Takagi
SUMMARY A 32-bit arithmetic logic unit (ALU) is designed for a rapid single flux quantum (RSFQ) bit-parallel processor. In the ALU, clocked gates are partially replaced by clockless gates. This reduces the number of D flip flops (DFFs) required for path balancing. The number of clocked gates, including DFFs, is reduced by approximately 40 %, and size of the clock distribution network is reduced. The number of pipeline stages becomes modest. The layout design of the ALU and simulation results show the e ff ectiveness of using clockless gates in wide datapath circuits.
{"title":"32-Bit ALU with Clockless Gates for RSFQ Bit-Parallel Processor","authors":"T. Kawaguchi, N. Takagi","doi":"10.1587/transele.2021sep0005","DOIUrl":"https://doi.org/10.1587/transele.2021sep0005","url":null,"abstract":"SUMMARY A 32-bit arithmetic logic unit (ALU) is designed for a rapid single flux quantum (RSFQ) bit-parallel processor. In the ALU, clocked gates are partially replaced by clockless gates. This reduces the number of D flip flops (DFFs) required for path balancing. The number of clocked gates, including DFFs, is reduced by approximately 40 %, and size of the clock distribution network is reduced. The number of pipeline stages becomes modest. The layout design of the ALU and simulation results show the e ff ectiveness of using clockless gates in wide datapath circuits.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88548522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2022mmi0009
A. Wakejima, A. Bose, Debaleen Biswas, S. Hishiki, Sumito Ouchi, K. Kitahara, K. Kawamura
SUMMARY A detailed investigation of DC and RF performance of AlGaN / GaN HEMT on 3C-SiC / low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC inter- mediate layer. The reported HEMT exhibited very low RF loss and ther-mally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the e ff ectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.
本文通过在3C-SiC /低阻硅(LR-Si)衬底上引入较厚的GaN层，详细研究了AlGaN / GaN HEMT的直流和射频性能。异质外延生长是通过金属有机化学气相沉积(MOCVD)在商业制备的6英寸LR-Si衬底上通过3C-SiC中间层实现的。所报道的HEMT在引入厚氮化镓层后表现出非常低的射频损耗和热稳定的放大器特性。温度相关的小信号和大信号特性验证了厚GaN层在LR-Si上的有效性，特别是在高温下降低射频损耗方面。综上所述，该器件在微波应用方面具有很高的潜力。
{"title":"AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications","authors":"A. Wakejima, A. Bose, Debaleen Biswas, S. Hishiki, Sumito Ouchi, K. Kitahara, K. Kawamura","doi":"10.1587/transele.2022mmi0009","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0009","url":null,"abstract":"SUMMARY A detailed investigation of DC and RF performance of AlGaN / GaN HEMT on 3C-SiC / low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC inter- mediate layer. The reported HEMT exhibited very low RF loss and ther-mally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the e ff ectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77143350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5036
Ibrahim Abdo, K. K. Tokgoz, A. Shirane, K. Okada
{"title":"F-band Frequency Multipliers with Fundamental and Harmonic Rejection for Improved Conversion Gain and Output Power","authors":"Ibrahim Abdo, K. K. Tokgoz, A. Shirane, K. Okada","doi":"10.1587/transele.2021ecp5036","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5036","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91532261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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