Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871261
T. Endoh, T. Funaki, H. Sakuraba, F. Masuoka
In this paper, pass-transistor logic (PTL) using surrounding gate transistors (SGT) is reported for the first time. This SGT-based PTL brings out the latent abilities of the PTL, especially improvement of the area occupation by 74% and the power-delay product by 70% at a supply voltage of 1 V compared to bulk MOSFET-based PTL.
{"title":"A high signal swing pass-transistor logic using surrounding gate transistor","authors":"T. Endoh, T. Funaki, H. Sakuraba, F. Masuoka","doi":"10.1109/SISPAD.2000.871261","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871261","url":null,"abstract":"In this paper, pass-transistor logic (PTL) using surrounding gate transistors (SGT) is reported for the first time. This SGT-based PTL brings out the latent abilities of the PTL, especially improvement of the area occupation by 74% and the power-delay product by 70% at a supply voltage of 1 V compared to bulk MOSFET-based PTL.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116681545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871236
I. Bork, W. Molzer
This paper describes progress made in modeling transient enhanced diffusion (TED) on the basis of "three-stream" point defect diffusion models. Such models show artificially high transient diffusion at temperatures below approximately 800/spl deg/C when standard initial damage conditions are used. Using appropriate conditions for the initial distribution of dopants, point defects and clusters, however, we were able to achieve surprisingly good results for TED experiments between 600/spl deg/C and 1100/spl deg/C and temperature ramp rates between 10/spl deg/C/min (furnace anneal) and 100/spl deg/C/sec (RTP) even with a "three-stream" diffusion model.
{"title":"Appropriate initial damage conditions for \"three-stream\" point defect diffusion models","authors":"I. Bork, W. Molzer","doi":"10.1109/SISPAD.2000.871236","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871236","url":null,"abstract":"This paper describes progress made in modeling transient enhanced diffusion (TED) on the basis of \"three-stream\" point defect diffusion models. Such models show artificially high transient diffusion at temperatures below approximately 800/spl deg/C when standard initial damage conditions are used. Using appropriate conditions for the initial distribution of dopants, point defects and clusters, however, we were able to achieve surprisingly good results for TED experiments between 600/spl deg/C and 1100/spl deg/C and temperature ramp rates between 10/spl deg/C/min (furnace anneal) and 100/spl deg/C/sec (RTP) even with a \"three-stream\" diffusion model.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133643088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871194
R. Sabelka, C. Harlander, S. Selberherr
Until recently, most interconnect models took into account capacitances and resistances only. With operating frequencies in the GHz regime, the effect of the magnetic field can no longer be neglected. Inductances, skin effect, and transmission line behavior must be considered carefully. For many complicated topographies, where lumped or one-dimensional distributed models do not reach the required accuracy, three dimensional quasi-static or even full-wave models are required. Since the amount of power dissipated in the interconnect structures is increasing, thermal interconnect modeling is also gaining importance, especially for silicon-on-insulator chips and low k materials. We demonstrate how simulation tools are keeping pace with these demands.
{"title":"The state of the art in interconnect simulation","authors":"R. Sabelka, C. Harlander, S. Selberherr","doi":"10.1109/SISPAD.2000.871194","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871194","url":null,"abstract":"Until recently, most interconnect models took into account capacitances and resistances only. With operating frequencies in the GHz regime, the effect of the magnetic field can no longer be neglected. Inductances, skin effect, and transmission line behavior must be considered carefully. For many complicated topographies, where lumped or one-dimensional distributed models do not reach the required accuracy, three dimensional quasi-static or even full-wave models are required. Since the amount of power dissipated in the interconnect structures is increasing, thermal interconnect modeling is also gaining importance, especially for silicon-on-insulator chips and low k materials. We demonstrate how simulation tools are keeping pace with these demands.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"34 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116496983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871247
S. Yoon, O. Kwon, Sukin Yoon, Hyunsu Jung, T. Won
A mesh generation algorithm for a curved surface is proposed to investigate a complex structure on a semiconductor substrate. This algorithm relies on the advancing front method with scattered data interpolation through a NURBS (nonuniform rational B-spline) surface. This algorithm has been applied to a cell-based simulation and a level set simulation. The NURBS mesh according to our algorithm excellently represented the surface evolution of the topography.
{"title":"A mesh generation algorithm for complex geometry [semiconductor process modelling]","authors":"S. Yoon, O. Kwon, Sukin Yoon, Hyunsu Jung, T. Won","doi":"10.1109/SISPAD.2000.871247","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871247","url":null,"abstract":"A mesh generation algorithm for a curved surface is proposed to investigate a complex structure on a semiconductor substrate. This algorithm relies on the advancing front method with scattered data interpolation through a NURBS (nonuniform rational B-spline) surface. This algorithm has been applied to a cell-based simulation and a level set simulation. The NURBS mesh according to our algorithm excellently represented the surface evolution of the topography.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122667782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871220
Yutao Ma, Litian Liu, L. Tian, Zhiping Yu, Zhijian Li
A new analytical charge control and I-V model for sub-micron and deep sub-micron MOSFETs is developed based on a newly developed charge control model in a MOS structure. Threshold voltage shift due to quantum mechanical effects (QMEs), finite inversion layer thickness effect (inversion layer capacitance) as well as increased depletion layer charge density after the strong inversion point are used cooperatively in the model.
{"title":"Comprehensive analytical charge control and I-V model of modern MOSFET's by fully comprising quantum mechanical effects","authors":"Yutao Ma, Litian Liu, L. Tian, Zhiping Yu, Zhijian Li","doi":"10.1109/SISPAD.2000.871220","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871220","url":null,"abstract":"A new analytical charge control and I-V model for sub-micron and deep sub-micron MOSFETs is developed based on a newly developed charge control model in a MOS structure. Threshold voltage shift due to quantum mechanical effects (QMEs), finite inversion layer thickness effect (inversion layer capacitance) as well as increased depletion layer charge density after the strong inversion point are used cooperatively in the model.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116786182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871240
A. Spinelli, A. Benvenuti, L. Conserva, A. Lacaita, A. Pacelli
A two-dimensional MOS device simulator including quantum-mechanical effects has been developed and applied to surface- and buried-channel p-MOS devices. The Schrodinger equation is solved, retaining a large number of eigenstates, which are then used to build a modified classical distribution accounting for the high energy part of the distribution. With this approach, discontinuities in the gate capacitance near flat bands have been eliminated without introducing any empirical parameter. For accurate device simulation, experimental data on the hole mobility were collected, and a nonlocal mobility model was used for carriers in the bound levels. A standard mobility model is adopted instead for the classically-distributed carriers. Results are presented for the gate capacitance and drain current of 0.35 /spl mu/m p-MOSFET devices, showing a good agreement over a wide range of channel doping concentrations.
{"title":"Quantum-mechanical 2D simulation of surface- and buried-channel p-MOS","authors":"A. Spinelli, A. Benvenuti, L. Conserva, A. Lacaita, A. Pacelli","doi":"10.1109/SISPAD.2000.871240","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871240","url":null,"abstract":"A two-dimensional MOS device simulator including quantum-mechanical effects has been developed and applied to surface- and buried-channel p-MOS devices. The Schrodinger equation is solved, retaining a large number of eigenstates, which are then used to build a modified classical distribution accounting for the high energy part of the distribution. With this approach, discontinuities in the gate capacitance near flat bands have been eliminated without introducing any empirical parameter. For accurate device simulation, experimental data on the hole mobility were collected, and a nonlocal mobility model was used for carriers in the bound levels. A standard mobility model is adopted instead for the classically-distributed carriers. Results are presented for the gate capacitance and drain current of 0.35 /spl mu/m p-MOSFET devices, showing a good agreement over a wide range of channel doping concentrations.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128611013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871235
P. Fastenko, S. Dunham, B. Murphy
We have analyzed the initial stages of annealing for amorphizing arsenic implants. The comparison of transient enhanced diffusion (TED) simulations to experimental data shows results that appear inconsistent with the standard assumption of complete removal of point defects from the regrown amorphized layer. Our analysis suggests that high arsenic concentrations may stabilize retention of vacancies during solid phase epitaxial regrowth and thereby lead to the formation of a vacancy-rich layer near the surface within the regrown region. The presence of this vacancy rich layer helps to account for both increased initial diffusion within the peak region for high temperature annealing and increased clustering in the peak region for lower temperatures.
{"title":"Modeling of initial stages of annealing for amorphizing arsenic implants","authors":"P. Fastenko, S. Dunham, B. Murphy","doi":"10.1109/SISPAD.2000.871235","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871235","url":null,"abstract":"We have analyzed the initial stages of annealing for amorphizing arsenic implants. The comparison of transient enhanced diffusion (TED) simulations to experimental data shows results that appear inconsistent with the standard assumption of complete removal of point defects from the regrown amorphized layer. Our analysis suggests that high arsenic concentrations may stabilize retention of vacancies during solid phase epitaxial regrowth and thereby lead to the formation of a vacancy-rich layer near the surface within the regrown region. The presence of this vacancy rich layer helps to account for both increased initial diffusion within the peak region for high temperature annealing and increased clustering in the peak region for lower temperatures.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125792081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871233
A. Mokhberi, P. Griffin, J. Plummer
The kinetics of boron activation were studied for a 40 keV 2/spl times/10/sup 14/ cm/sup -2/ boron implant. A large matrix of anneals with temperatures and times ranging from 500/spl deg/C to 1000/spl deg/C and 1 second to 30 minutes, respectively, was considered. The active dose was monitored using Hall measurement, and the results were modeled using the dopant defect models in SUPREM4.
{"title":"Kinetics of boron activation","authors":"A. Mokhberi, P. Griffin, J. Plummer","doi":"10.1109/SISPAD.2000.871233","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871233","url":null,"abstract":"The kinetics of boron activation were studied for a 40 keV 2/spl times/10/sup 14/ cm/sup -2/ boron implant. A large matrix of anneals with temperatures and times ranging from 500/spl deg/C to 1000/spl deg/C and 1 second to 30 minutes, respectively, was considered. The active dose was monitored using Hall measurement, and the results were modeled using the dopant defect models in SUPREM4.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132012140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871222
M. Hane, T. Ikezawa, G. Gilmer
Molecular dynamics calculations were performed for di-interstitial-silicon based on the tight-binding model for silicon. Calculation results indicate that the di-interstitial can diffuse into crystalline silicon as fast as the mono-interstitial silicon. Three kinds of the stable configurations were found: T, Z, and W-configuration. The T-configuration is the lowest while the W is the higher energy level configuration. A critical-path method (a saddle-point search algorithm) revealed the di-interstitial migration pathway. The T to W transition needs about 0.96 eV of the barrier energy, and the W to W transition can occur for less than 0.1 eV barrier energy. Therefore, di-interstitials can show a long-range hop via the W-W transition which should be thermally initiated by the T-W transition (reorientation).
{"title":"Di-interstitial diffusivity and migration path calculations based on tight-binding Hamiltonian molecular dynamics","authors":"M. Hane, T. Ikezawa, G. Gilmer","doi":"10.1109/SISPAD.2000.871222","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871222","url":null,"abstract":"Molecular dynamics calculations were performed for di-interstitial-silicon based on the tight-binding model for silicon. Calculation results indicate that the di-interstitial can diffuse into crystalline silicon as fast as the mono-interstitial silicon. Three kinds of the stable configurations were found: T, Z, and W-configuration. The T-configuration is the lowest while the W is the higher energy level configuration. A critical-path method (a saddle-point search algorithm) revealed the di-interstitial migration pathway. The T to W transition needs about 0.96 eV of the barrier energy, and the W to W transition can occur for less than 0.1 eV barrier energy. Therefore, di-interstitials can show a long-range hop via the W-W transition which should be thermally initiated by the T-W transition (reorientation).","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131059847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871232
S. Aronowitz, H. Puchner, V. Zubcov
Activation/deactivation behavior of combinations of electrically active dopants boron and indium with nitrogen was studied both experimentally and quantum chemically. It was found that direct correlations could be made between relative electrical activity and top-filled/lowest-empty molecular orbitals obtained with a model silicon lattice system. The trend in activation explained the device behavior observed when retrograde indium channels in NMOS devices were created with nitrogen present to control gate oxide growth.
{"title":"Effects of nitrogen on the activation/deactivation of boron and indium in n-channel CMOS devices","authors":"S. Aronowitz, H. Puchner, V. Zubcov","doi":"10.1109/SISPAD.2000.871232","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871232","url":null,"abstract":"Activation/deactivation behavior of combinations of electrically active dopants boron and indium with nitrogen was studied both experimentally and quantum chemically. It was found that direct correlations could be made between relative electrical activity and top-filled/lowest-empty molecular orbitals obtained with a model silicon lattice system. The trend in activation explained the device behavior observed when retrograde indium channels in NMOS devices were created with nitrogen present to control gate oxide growth.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124981501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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