Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871225
P. Oldiges, Qinghuang Lint, Karen Petrillot, Martha Sanchez, M. Ieong, M. Hargrove
A fast method to estimate the effects of line edge roughness is proposed. This method is based upon the use of multiple 2D device "slices" sandwiched together to form a MOS transistor of a given width. This method was verified to yield an accurate representation of rough edge MOS transistors through comparisons to full three dimensional simulations. A subsequent statistical study shows how the variation in line edge roughness affects the values and variances of several key device parameters.
{"title":"Modeling line edge roughness effects in sub 100 nanometer gate length devices","authors":"P. Oldiges, Qinghuang Lint, Karen Petrillot, Martha Sanchez, M. Ieong, M. Hargrove","doi":"10.1109/SISPAD.2000.871225","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871225","url":null,"abstract":"A fast method to estimate the effects of line edge roughness is proposed. This method is based upon the use of multiple 2D device \"slices\" sandwiched together to form a MOS transistor of a given width. This method was verified to yield an accurate representation of rough edge MOS transistors through comparisons to full three dimensional simulations. A subsequent statistical study shows how the variation in line edge roughness affects the values and variances of several key device parameters.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"257 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123097259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871206
O. Tornblad, P. Sverdrup, D. Yergeau, Zhiping Yu, Kenneth E. Goodson, Robert W. Dutton
In this work, the effect of phonon boundary scattering on the heat transfer in thin silicon layers and close to interfaces was investigated. The modeling is applicable to silicon-on-insulator (SOI) devices as well as to conventional bulk technology. From a linearized Boltzmann transport equation (BTE), anisotropic local thermal conductivities are derived. A separate expression is formulated for the case of a bulk device where only one interface is present. Anisotropy was implemented as a finite element-based operator into the PROPHET device simulator and a demonstration of the new electrothermal modeling was made for a conventional MOSFET. The anisotropic local thermal conductivities lead to a temperature increase /spl sim/30% higher at the gate oxide interface compared to conventional modeling.
{"title":"Modeling and simulation of phonon boundary scattering in PDE-based device simulators","authors":"O. Tornblad, P. Sverdrup, D. Yergeau, Zhiping Yu, Kenneth E. Goodson, Robert W. Dutton","doi":"10.1109/SISPAD.2000.871206","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871206","url":null,"abstract":"In this work, the effect of phonon boundary scattering on the heat transfer in thin silicon layers and close to interfaces was investigated. The modeling is applicable to silicon-on-insulator (SOI) devices as well as to conventional bulk technology. From a linearized Boltzmann transport equation (BTE), anisotropic local thermal conductivities are derived. A separate expression is formulated for the case of a bulk device where only one interface is present. Anisotropy was implemented as a finite element-based operator into the PROPHET device simulator and a demonstration of the new electrothermal modeling was made for a conventional MOSFET. The anisotropic local thermal conductivities lead to a temperature increase /spl sim/30% higher at the gate oxide interface compared to conventional modeling.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128403277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871219
M. Miura-Mattausch, H. Ueno, H. Mattausch, S. Kumashiro, Tetsuya Yamaguchi, K. Yamashita, N. Nakayama
The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed.
{"title":"Circuit simulation models for coming MOSFET generations","authors":"M. Miura-Mattausch, H. Ueno, H. Mattausch, S. Kumashiro, Tetsuya Yamaguchi, K. Yamashita, N. Nakayama","doi":"10.1109/SISPAD.2000.871219","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871219","url":null,"abstract":"The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130774795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871201
P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi
We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.
{"title":"Coupled Monte Carlo simulation of Si and SiO/sub 2/ transport in MOS capacitors","authors":"P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi","doi":"10.1109/SISPAD.2000.871201","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871201","url":null,"abstract":"We present a Monte Carlo (MC) model comprising SiO/sub 2/ and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nm oxides for nonvolatile memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"24 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113968170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871193
Mark S. Lundstrom, Z. Ren, S. Datta
A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined.
{"title":"Essential physics of carrier transport in nanoscale MOSFETs","authors":"Mark S. Lundstrom, Z. Ren, S. Datta","doi":"10.1109/SISPAD.2000.871193","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871193","url":null,"abstract":"A simple, physical view of carrier transport in nanoscale MOSFETs is presented. The role of ballistic transport, scattering and off-transport, equilibrium transport, and quantum transport are illustrated by numerical simulation, and the limitations of common approaches used for device TCAD are examined.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115128893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871215
Yutao Hu, K. Mayaram
A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.
{"title":"Periodic steady-state analysis for coupled device and circuit simulation","authors":"Yutao Hu, K. Mayaram","doi":"10.1109/SISPAD.2000.871215","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871215","url":null,"abstract":"A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128731622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871237
T. Hiramoto, H. Majima
Extremely small silicon MOS devices in a 10-nm scale are successfully fabricated and characterized at room temperature and low temperatures. In such small devices, the quantum confinement effect and single electron charging effect manifest themselves in device characteristics even at room temperature. Device modeling challenges for nanoscale MOSFETs are also discussed.
{"title":"Characteristics of silicon nano-scale devices","authors":"T. Hiramoto, H. Majima","doi":"10.1109/SISPAD.2000.871237","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871237","url":null,"abstract":"Extremely small silicon MOS devices in a 10-nm scale are successfully fabricated and characterized at room temperature and low temperatures. In such small devices, the quantum confinement effect and single electron charging effect manifest themselves in device characteristics even at room temperature. Device modeling challenges for nanoscale MOSFETs are also discussed.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126169414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871249
T. Fullenbach, K. Stuben, Slobodan Mijalković
In this paper, the performance of a special algebraic multigrid (AMG) solver for the solution of stress analysis problems in process simulation has been investigated. The discrete stress analysis equations are generated directly by the process simulator. The practical simulation examples include stress analysis during natively growing and deposited material films. It is shown that approaches using the AMG solver as a preconditioner are better than standard iterative solvers with regard to computing times and convergence behavior. A further comparison demonstrates that these AMG approaches are faster than the SuperLU direct solver.
{"title":"Application of an algebraic multigrid solver to process simulation problems","authors":"T. Fullenbach, K. Stuben, Slobodan Mijalković","doi":"10.1109/SISPAD.2000.871249","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871249","url":null,"abstract":"In this paper, the performance of a special algebraic multigrid (AMG) solver for the solution of stress analysis problems in process simulation has been investigated. The discrete stress analysis equations are generated directly by the process simulator. The practical simulation examples include stress analysis during natively growing and deposited material films. It is shown that approaches using the AMG solver as a preconditioner are better than standard iterative solvers with regard to computing times and convergence behavior. A further comparison demonstrates that these AMG approaches are faster than the SuperLU direct solver.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130361958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871203
P. Palestri, L. Selmi, F. Hurkx, J. Slotboom
We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring relevant nonlocal effects. The method is suited to analyze base and collector signal delays in presence of significant nonequilibrium transport effects and up to high currents, and to verify the physical meaning and applicability of delay expressions for compact models.
{"title":"A Monte Carlo technique to investigate signal delays of advanced Si BJT's up to high currents","authors":"P. Palestri, L. Selmi, F. Hurkx, J. Slotboom","doi":"10.1109/SISPAD.2000.871203","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871203","url":null,"abstract":"We present a new Monte Carlo technique to investigate the signal delay of advanced BJTs featuring relevant nonlocal effects. The method is suited to analyze base and collector signal delays in presence of significant nonequilibrium transport effects and up to high currents, and to verify the physical meaning and applicability of delay expressions for compact models.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127803304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-06DOI: 10.1109/SISPAD.2000.871256
Seonghearn Lee, Hyun-Kyu Yu
A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFETs. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods.
{"title":"A new method to determine channel mobility model parameters in submicron MOSFET's using measured S-parameters","authors":"Seonghearn Lee, Hyun-Kyu Yu","doi":"10.1109/SISPAD.2000.871256","DOIUrl":"https://doi.org/10.1109/SISPAD.2000.871256","url":null,"abstract":"A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFETs. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129239880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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