Pub Date : 2024-12-11DOI: 10.1109/TVLSI.2024.3493512
Jari Nurmi;Snorre Aunet;Alireza Saberkari
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Pub Date : 2024-12-11DOI: 10.1109/TVLSI.2024.3508673
Zhichao Chen;Ali H. Hassan;Rhesa Ramadhan;Yingheng Li;Chih-Kong Ken Yang;Sudhakar Pamarti;Puneet Gupta
Low-temperature (LT) conditions can potentially lead to lower power consumption and enhanced performance in circuit operations by reducing the transistor leakage current, increasing carrier mobility, reducing wear-out, and reducing interconnect resistance. We develop PROCEED-LT, a pathfinding framework to co-optimize devices and circuits over a wide performance range. Our results demonstrate that circuit operations at LT (−196 °C) reduce power compared to room temperature (RT, 85 °C) by $15times $