Pub Date : 2024-08-07DOI: 10.1109/TVLSI.2024.3436047
Xiaoyong Song;Zhichuan Guo
Match table is the key part to perform packet processing and forwarding for programmable switches in a software-defined network (SDN). However, the match table in current field-programmable gate array (FPGA)-based switches is inflexible or undisclosed. When the network function changes, the match table on FPGA needs to be redesigned or reset size parameters, and after recompilation and reimplementation, it could work again; this time-consuming and labor-intensive operation seriously reduces the flexibility and configurability of the switch. To address this issue, this article presents a design of reconfigurable match table (RMT) for FPGA-based programmable switches. A three-layer table structure is introduced to realize the reconfiguration and hardware-plane mapping of user-defined tables, and the logical tables in packet processing pipeline are interconnected with the physical tables in memory pool by the designed resource-efficient segment crossbar. To the best of our knowledge, this article is the first to publicly present the entire FPGA-based RMT design scheme and implementation details. The proposed design implements reconfigurable ternary content addressable memory (TCAM) based and static random access memory (SRAM) based match tables on Xilinx FPGA and verifies them with a packet filter system. In the proposed RMT system, a user could reconfigure the number, depth, and width of user-defined match tables (UMTs) in pipeline via control plane without modifying hardware, which enhances the flexibility of the data plane of FPGA-based switch greatly.
{"title":"An Implementation of Reconfigurable Match Table for FPGA-Based Programmable Switches","authors":"Xiaoyong Song;Zhichuan Guo","doi":"10.1109/TVLSI.2024.3436047","DOIUrl":"10.1109/TVLSI.2024.3436047","url":null,"abstract":"Match table is the key part to perform packet processing and forwarding for programmable switches in a software-defined network (SDN). However, the match table in current field-programmable gate array (FPGA)-based switches is inflexible or undisclosed. When the network function changes, the match table on FPGA needs to be redesigned or reset size parameters, and after recompilation and reimplementation, it could work again; this time-consuming and labor-intensive operation seriously reduces the flexibility and configurability of the switch. To address this issue, this article presents a design of reconfigurable match table (RMT) for FPGA-based programmable switches. A three-layer table structure is introduced to realize the reconfiguration and hardware-plane mapping of user-defined tables, and the logical tables in packet processing pipeline are interconnected with the physical tables in memory pool by the designed resource-efficient segment crossbar. To the best of our knowledge, this article is the first to publicly present the entire FPGA-based RMT design scheme and implementation details. The proposed design implements reconfigurable ternary content addressable memory (TCAM) based and static random access memory (SRAM) based match tables on Xilinx FPGA and verifies them with a packet filter system. In the proposed RMT system, a user could reconfigure the number, depth, and width of user-defined match tables (UMTs) in pipeline via control plane without modifying hardware, which enhances the flexibility of the data plane of FPGA-based switch greatly.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 11","pages":"2121-2134"},"PeriodicalIF":2.8,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141939169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-07DOI: 10.1109/TVLSI.2024.3436575
Mehdi Saberi;Hossein Yaghoobzadeh Shadmehri;Mohammad Tavakkoli Ghouchani;Alexandre Schmid
This brief proposes a low-voltage, high-precision, and high-dynamic-range current-mode analog winner-take-all (WTA) circuit. The proposed structure employs a new high-gain stage as a feedback network between the input node of each cell and the common node of the circuit to reduce the sensitivity of the output current to the loser signals, especially when they are close to the winner. In addition, another network is employed that senses the amount of the output/winner current and adjusts the bias current of the gain stages. This ensures that the drain-source voltage of the input transistor in the winner cell matches the behavior of the output transistor’s drain-source voltage, enhancing the accuracy as well as the input dynamic range (DR) of the structure. Moreover, since the circuit works properly with a minimum supply voltage of only $V_{text {GS}} + V_{text {eff}}$ , it is a promising candidate for applications in emerging technologies with low supply voltage requirements. Based on the proposed structure, a three-input WTA circuit is designed and fabricated in a 0.18- $mu $ m CMOS technology. According to the measurement results, the proposed circuit exhibits a maximum error of 1.5% for the input signal range of $60~mu $ A when the input frequency is 100 kHz. The silicon area occupied by the circuit is $33~mu $ m $times 65~mu $ m.
本简介提出了一种低电压、高精度和高动态范围的电流模式模拟赢家通吃（WTA）电路。所提出的结构采用了一个新的高增益级作为每个单元输入节点和电路公共节点之间的反馈网络，以降低输出电流对输家信号的敏感度，尤其是当输家信号接近赢家信号时。此外，还采用了另一个网络来检测输出/胜者电流的大小，并调整增益级的偏置电流。这确保了赢家单元中输入晶体管的漏极-源极电压与输出晶体管的漏极-源极电压相匹配，从而提高了结构的精度和输入动态范围 (DR)。此外，由于电路在最低电源电压仅为 $V_{text {GS}} 的情况下也能正常工作。+ V_{text {eff}}$，因此它有望应用于对电源电压要求较低的新兴技术中。根据所提出的结构，设计了一个三输入 WTA 电路，并在 0.18- $mu $ m CMOS 技术中制作完成。测量结果表明，当输入频率为 100 kHz 时，输入信号范围为 $60~mu $ A 时，所提电路的最大误差为 1.5%。电路所占用的硅面积为 33~mu $ m，65~mu $ m。
{"title":"A High-Precision and High-Dynamic-Range Current-Mode WTA Circuit for Low-Supply-Voltage Applications","authors":"Mehdi Saberi;Hossein Yaghoobzadeh Shadmehri;Mohammad Tavakkoli Ghouchani;Alexandre Schmid","doi":"10.1109/TVLSI.2024.3436575","DOIUrl":"10.1109/TVLSI.2024.3436575","url":null,"abstract":"This brief proposes a low-voltage, high-precision, and high-dynamic-range current-mode analog winner-take-all (WTA) circuit. The proposed structure employs a new high-gain stage as a feedback network between the input node of each cell and the common node of the circuit to reduce the sensitivity of the output current to the loser signals, especially when they are close to the winner. In addition, another network is employed that senses the amount of the output/winner current and adjusts the bias current of the gain stages. This ensures that the drain-source voltage of the input transistor in the winner cell matches the behavior of the output transistor’s drain-source voltage, enhancing the accuracy as well as the input dynamic range (DR) of the structure. Moreover, since the circuit works properly with a minimum supply voltage of only \u0000<inline-formula> <tex-math>$V_{text {GS}} + V_{text {eff}}$ </tex-math></inline-formula>\u0000, it is a promising candidate for applications in emerging technologies with low supply voltage requirements. Based on the proposed structure, a three-input WTA circuit is designed and fabricated in a 0.18-\u0000<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>\u0000 m CMOS technology. According to the measurement results, the proposed circuit exhibits a maximum error of 1.5% for the input signal range of \u0000<inline-formula> <tex-math>$60~mu $ </tex-math></inline-formula>\u0000 A when the input frequency is 100 kHz. The silicon area occupied by the circuit is \u0000<inline-formula> <tex-math>$33~mu $ </tex-math></inline-formula>\u0000 m \u0000<inline-formula> <tex-math>$times 65~mu $ </tex-math></inline-formula>\u0000 m.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 10","pages":"1955-1958"},"PeriodicalIF":2.8,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141939171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-06DOI: 10.1109/TVLSI.2024.3435419
Mitchell Cooke;Nicola Nicolici
Emerging memory technologies, such as DDR5, offer increased data rates and storage capacities, at the expense of signal integrity challenges. To address these challenges, the DDR5 standard incorporates a four-tap decision feedback equalizer (DFE). As elaborated in this article, known methods for DFE tuning are limited due to interface complexity and distinct equalization requirements for DDR5. We propose a decision-directed DFE tuning method called thresholding decision-directed descent (T3D). By leveraging DDR5 architectural features, our novel method tracks the eye envelope as it opens, which facilitates rapid convergence compared to the state of the art. To validate the performance of T3D, silicon measurements are presented alongside a virtual testbench methodology. By demonstrating the high correlation between silicon and simulation results, the virtual testbench can be beneficial for the design, validation, and prototyping of future DFE tuning methods.
{"title":"Thresholding Decision-Directed Descent (T3D): A Tuning Solution for DDR5 DRAM DFEs","authors":"Mitchell Cooke;Nicola Nicolici","doi":"10.1109/TVLSI.2024.3435419","DOIUrl":"10.1109/TVLSI.2024.3435419","url":null,"abstract":"Emerging memory technologies, such as DDR5, offer increased data rates and storage capacities, at the expense of signal integrity challenges. To address these challenges, the DDR5 standard incorporates a four-tap decision feedback equalizer (DFE). As elaborated in this article, known methods for DFE tuning are limited due to interface complexity and distinct equalization requirements for DDR5. We propose a decision-directed DFE tuning method called thresholding decision-directed descent (T3D). By leveraging DDR5 architectural features, our novel method tracks the eye envelope as it opens, which facilitates rapid convergence compared to the state of the art. To validate the performance of T3D, silicon measurements are presented alongside a virtual testbench methodology. By demonstrating the high correlation between silicon and simulation results, the virtual testbench can be beneficial for the design, validation, and prototyping of future DFE tuning methods.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 11","pages":"2060-2073"},"PeriodicalIF":2.8,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-05DOI: 10.1109/tvlsi.2024.3435059
Ko-Hong Lin, Ont-Derh Lin, Shi-Yu Huang, Duo Sheng
{"title":"Low-Jitter Frequency Doubling Circuit Supporting Higher-Speed BISG and Aging Sensing in a Chiplet-Based Design Environment","authors":"Ko-Hong Lin, Ont-Derh Lin, Shi-Yu Huang, Duo Sheng","doi":"10.1109/tvlsi.2024.3435059","DOIUrl":"https://doi.org/10.1109/tvlsi.2024.3435059","url":null,"abstract":"","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"57 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141939172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A dynamic element matching (DEM) decoder with integrated mismatch calibration control for high-speed current-steering digital-to-analog converters (CS-DACs) and CSDAC- based direct digital frequency synthesizers (DDFSs) is studied and presented. The DEM algorithm achieves very good averaging of mismatch-induced errors in the succeeding CS-DAC. It features a minimum element transition rate, therefore opimizing the power dissipation and ensuring minimal glitch energy at the output. Due to the chosen network-based architecture, with only a few modifications of the hardware, the decoder allows the integration of a comprehensive current source mismatch calibration that can be fully operated in the background and even in parallel to the regular DEM operation. A proof-ofconcept hardware implementation of the presented decoder was fabricated in a 22-nm FD-SOI CMOS process and characterized in a high-speed DDFS system with a sampling rate of 5 GHz. Measurements reveal a significant improvement in the spurious free dynamic range (SFDR) and signal-to-noise-and-distortion ratio (SNDR) when the calibration and DEM are enabled. Compared to the state-of-the-art (SoA), the presented DDFS achieves one of the best figures of merit.
{"title":"A High-Speed Dynamic Element Matching Decoder With Integrated Background Calibration Control","authors":"Tobias Schirmer;Simon Buhr;Felix Burkhardt;Florian Protze;Frank Ellinger","doi":"10.1109/TVLSI.2024.3432640","DOIUrl":"10.1109/TVLSI.2024.3432640","url":null,"abstract":"A dynamic element matching (DEM) decoder with integrated mismatch calibration control for high-speed current-steering digital-to-analog converters (CS-DACs) and CSDAC- based direct digital frequency synthesizers (DDFSs) is studied and presented. The DEM algorithm achieves very good averaging of mismatch-induced errors in the succeeding CS-DAC. It features a minimum element transition rate, therefore opimizing the power dissipation and ensuring minimal glitch energy at the output. Due to the chosen network-based architecture, with only a few modifications of the hardware, the decoder allows the integration of a comprehensive current source mismatch calibration that can be fully operated in the background and even in parallel to the regular DEM operation. A proof-ofconcept hardware implementation of the presented decoder was fabricated in a 22-nm FD-SOI CMOS process and characterized in a high-speed DDFS system with a sampling rate of 5 GHz. Measurements reveal a significant improvement in the spurious free dynamic range (SFDR) and signal-to-noise-and-distortion ratio (SNDR) when the calibration and DEM are enabled. Compared to the state-of-the-art (SoA), the presented DDFS achieves one of the best figures of merit.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 11","pages":"2074-2084"},"PeriodicalIF":2.8,"publicationDate":"2024-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/TVLSI.2024.3432403
Heng Zhang;Wenhe Yin;Sunan He;Yuan Du;Li Du
Transformer architectures have achieved state-of-the-art performance in various applications. However, deploying transformer models on resource-constrained platforms is still challenging due to its dynamic workloads, intensive computations, and substantial memory access. In this article, we propose a two-stage pipelined compute-in-memory (CIM) macro for effectively deploying and accelerating the feed-forward network (FFN) layers of transformer models. Two independent CIM arrays are designed to execute the two distinct linear projections in FFN layers, which are interconnected by co-designed analog rectified linear unit (ReLU) circuits to realize the nonlinear activation function. The analog multiply-and-add (MAC) results from the first CIM array are streamed directly to the analog ReLU circuits, and subsequently to the next CIM array for performing another linear projection. This architecture eliminates the need for analog-to-digital converters (ADCs) and digital-to-analog converters (DACs) for internal results’ staging, thereby enhancing overall macro efficiency and reducing computing latency. A proof-of-concept macro is fabricated using TSMC 65-nm process and achieves 4.096 TOPS peak throughput, 4.39 TOPS/mm2 area efficiency, and 49.83 TOPS/W energy efficiency. To map transformer models onto the proposed macro, we quantize the FFN layers of BERTMINI model under per-token granularity for activations and per-tensor granularity for weights using quantization-aware training (QAT), which exhibits excellent accuracy across multiple benchmarks.
{"title":"An Efficient Two-Stage Pipelined Compute-in-Memory Macro for Accelerating Transformer Feed-Forward Networks","authors":"Heng Zhang;Wenhe Yin;Sunan He;Yuan Du;Li Du","doi":"10.1109/TVLSI.2024.3432403","DOIUrl":"10.1109/TVLSI.2024.3432403","url":null,"abstract":"Transformer architectures have achieved state-of-the-art performance in various applications. However, deploying transformer models on resource-constrained platforms is still challenging due to its dynamic workloads, intensive computations, and substantial memory access. In this article, we propose a two-stage pipelined compute-in-memory (CIM) macro for effectively deploying and accelerating the feed-forward network (FFN) layers of transformer models. Two independent CIM arrays are designed to execute the two distinct linear projections in FFN layers, which are interconnected by co-designed analog rectified linear unit (ReLU) circuits to realize the nonlinear activation function. The analog multiply-and-add (MAC) results from the first CIM array are streamed directly to the analog ReLU circuits, and subsequently to the next CIM array for performing another linear projection. This architecture eliminates the need for analog-to-digital converters (ADCs) and digital-to-analog converters (DACs) for internal results’ staging, thereby enhancing overall macro efficiency and reducing computing latency. A proof-of-concept macro is fabricated using TSMC 65-nm process and achieves 4.096 TOPS peak throughput, 4.39 TOPS/mm2 area efficiency, and 49.83 TOPS/W energy efficiency. To map transformer models onto the proposed macro, we quantize the FFN layers of BERTMINI model under per-token granularity for activations and per-tensor granularity for weights using quantization-aware training (QAT), which exhibits excellent accuracy across multiple benchmarks.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 10","pages":"1889-1899"},"PeriodicalIF":2.8,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/TVLSI.2024.3430224
Luchang He;Chenchen Xie;Qingyu Wu;Siqiu Xu;Houpeng Chen;Xing Ding;Xi Li;Zhitang Song
In this article, a low-cost quadruple-node-upsets resilient latch (LCQRL) design is proposed. To meet the high-reliability demands of safety-critical applications, the latch integrates nine soft-error-interceptive modules (SIMs) to form robust feedback loops, ensuring complete resilience to quadruple-node upsets (QNUs). Each Sim comprises ten CMOS transistors and a clocked inverter. Notably, C-element (CE) and dual interlocked storage cell (DICE) modules are not employed in this circuit, resulting in a small area and low power consumption. The simulation results verify the complete QNU self-recoverability and cost-effectiveness of this design. Compared with the existing radiation-hardened QNU resilient latches, the LCQRL latch demonstrates significant improvements in area, power consumption, and area-power–delay product (APDP) by 47.8%, 63%, and 75.5%, respectively. Furthermore, it exhibits low sensitivity to process, voltage, and temperature (PVT) variations.
{"title":"A Low-Cost Quadruple-Node-Upsets Resilient Latch Design","authors":"Luchang He;Chenchen Xie;Qingyu Wu;Siqiu Xu;Houpeng Chen;Xing Ding;Xi Li;Zhitang Song","doi":"10.1109/TVLSI.2024.3430224","DOIUrl":"10.1109/TVLSI.2024.3430224","url":null,"abstract":"In this article, a low-cost quadruple-node-upsets resilient latch (LCQRL) design is proposed. To meet the high-reliability demands of safety-critical applications, the latch integrates nine soft-error-interceptive modules (SIMs) to form robust feedback loops, ensuring complete resilience to quadruple-node upsets (QNUs). Each Sim comprises ten CMOS transistors and a clocked inverter. Notably, C-element (CE) and dual interlocked storage cell (DICE) modules are not employed in this circuit, resulting in a small area and low power consumption. The simulation results verify the complete QNU self-recoverability and cost-effectiveness of this design. Compared with the existing radiation-hardened QNU resilient latches, the LCQRL latch demonstrates significant improvements in area, power consumption, and area-power–delay product (APDP) by 47.8%, 63%, and 75.5%, respectively. Furthermore, it exhibits low sensitivity to process, voltage, and temperature (PVT) variations.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 10","pages":"1930-1939"},"PeriodicalIF":2.8,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/TVLSI.2024.3430498
Xiaoning Ma;Qinzhi Xu;Chenghan Wang;He Cao;Jianyun Liu;Daoqing Zhang;Zhiqiang Li
Chiplet heterogeneous integration (CHI) is one of the important technology choices to continue Moore’s law. However, due to the characteristics of high power and low supply voltage in CHI systems, heavy currents need to flow through the power delivery network (PDN), and the Joule heating effect will result in the overall temperature increase of the CHI system. Meanwhile, the high temperature will cause the current as well as the performance of the system to degrade and a series of reliability problems will occur. In this article, an effective electrical-thermal coupling model is proposed to predict the steady-state temperature distribution of a 2.5-D CHI system considering the Joule heating effect and the temperature effect on the IR drop. The equivalent electrical conductivity model is also built up to describe the design features of the redistribution layer (RDL), bump, and through silicon via (TSV) structures based on the electrical-thermal duality. Furthermore, the governing equations for voltage distribution and temperature distribution are solved simultaneously by utilizing the finite volume method (FVM) with nonuniform mesh to realize the electrical-thermal co-simulation of the multiscale CHI system. The model application is further performed to investigate the influence of the model parameters on the voltage drop and temperature distribution of the CHI system. The verified systems and simulated results of the present investigation demonstrate the viability and accuracy of voltage and temperature field co-simulation and indicate that the new proposed electrical-thermal model is helpful in thermal and voltage drop analysis of packaging structures with the Joule heating effect and can be adopted to assist in the physical design optimization of 2.5-D CHI or 3-D heterogeneous stacked chips.
芯片异质集成（CHI）是延续摩尔定律的重要技术选择之一。然而，由于 CHI 系统具有高功率、低供电电压的特点，因此需要在功率传输网络（PDN）中流过大电流，焦耳热效应会导致 CHI 系统整体温度升高。同时，高温将导致电流和系统性能下降，并引发一系列可靠性问题。本文提出了一种有效的电热耦合模型，用于预测 2.5-D CHI 系统的稳态温度分布，其中考虑了焦耳热效应和温度对红外压降的影响。还建立了等效电导率模型，以描述基于电热二元性的再分布层 (RDL)、凸块和硅通孔 (TSV) 结构的设计特征。此外，利用非均匀网格有限体积法（FVM）同时求解了电压分布和温度分布的支配方程，实现了多尺度 CHI 系统的电热协同模拟。模型应用进一步研究了模型参数对 CHI 系统压降和温度分布的影响。本研究的验证系统和模拟结果证明了电压场和温度场协同模拟的可行性和准确性，并表明新提出的电热模型有助于对具有焦耳热效应的封装结构进行热分析和压降分析，并可用于辅助 2.5-D CHI 或 3-D 异构堆叠芯片的物理设计优化。
{"title":"An Electrical-Thermal Co-Simulation Model of Chiplet Heterogeneous Integration Systems","authors":"Xiaoning Ma;Qinzhi Xu;Chenghan Wang;He Cao;Jianyun Liu;Daoqing Zhang;Zhiqiang Li","doi":"10.1109/TVLSI.2024.3430498","DOIUrl":"10.1109/TVLSI.2024.3430498","url":null,"abstract":"Chiplet heterogeneous integration (CHI) is one of the important technology choices to continue Moore’s law. However, due to the characteristics of high power and low supply voltage in CHI systems, heavy currents need to flow through the power delivery network (PDN), and the Joule heating effect will result in the overall temperature increase of the CHI system. Meanwhile, the high temperature will cause the current as well as the performance of the system to degrade and a series of reliability problems will occur. In this article, an effective electrical-thermal coupling model is proposed to predict the steady-state temperature distribution of a 2.5-D CHI system considering the Joule heating effect and the temperature effect on the IR drop. The equivalent electrical conductivity model is also built up to describe the design features of the redistribution layer (RDL), bump, and through silicon via (TSV) structures based on the electrical-thermal duality. Furthermore, the governing equations for voltage distribution and temperature distribution are solved simultaneously by utilizing the finite volume method (FVM) with nonuniform mesh to realize the electrical-thermal co-simulation of the multiscale CHI system. The model application is further performed to investigate the influence of the model parameters on the voltage drop and temperature distribution of the CHI system. The verified systems and simulated results of the present investigation demonstrate the viability and accuracy of voltage and temperature field co-simulation and indicate that the new proposed electrical-thermal model is helpful in thermal and voltage drop analysis of packaging structures with the Joule heating effect and can be adopted to assist in the physical design optimization of 2.5-D CHI or 3-D heterogeneous stacked chips.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"32 10","pages":"1769-1781"},"PeriodicalIF":2.8,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-29DOI: 10.1109/tvlsi.2024.3430059
Patrick Fath, Harald Pretl
{"title":"A 370-nW Bio-AFE With 2.9-$mu$Vrms Input Noise in an Octa-Channel System-in-Package for Multimode Bio-Signal Acquisition","authors":"Patrick Fath, Harald Pretl","doi":"10.1109/tvlsi.2024.3430059","DOIUrl":"https://doi.org/10.1109/tvlsi.2024.3430059","url":null,"abstract":"","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"51 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141867467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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