AbstractThis research aims to develop flexible semiconductors for triboelectric nanogenerator (TENG) applications. The sample powders of graphitic carbon nitride (g-C3N4) and copper (I) oxide (Cu2O) as N-type and P-type semiconductors, respectively, were synthesized. The semiconductors were prepared to be a composite film with alginate. The structure, morphology, and purity of the N- and P-type semiconductors were characterized using X-Ray diffraction and scanning electron microscopy techniques. Through the optical characterization, the N-type semiconductor showed the calculated energy band gap of 2.80 eV, while the P-type semiconductor was 1.90 eV. The P–N junction property of prepared samples was confirmed using a nonlinear current–voltage characteristic. After that, two flexible semiconductors were frictional paired for TENG. Through a vertical contact-separation mode, the P–N junction-based TENG produced a maximum output voltage and current of 3.90 V and 0.44 µA, respectively, with a maximum output power of 0.35 µW at 10 MΩ. In summary, the present work achieved the preparation of flexible P- and N-type semiconductors. The feasibility to harvest the mechanical energy was demonstrated in the TENG configuration. This idea is crucial for the future development of flexible harvesting/sensing devices using a novel concept.Keywords: P-type semiconductorN-type semiconductorP–N Junctiontriboelectric nanogenerator Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by KMITL under the Grant number KREF156601.The work of Supakarn Worathat thanks to funding support from the Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang (KMITL) under Grant no. RA/TA 2565-M-001. The work of S. Sriphan was funded by King Mongkut’s University of Technology North Bangkok, Contract no. KMUTNB-65-KNOW-05.
摘要本研究旨在开发用于摩擦电纳米发电机(TENG)的柔性半导体。分别制备了n型和p型半导体的石墨化氮化碳(g-C3N4)和氧化铜(Cu2O)样品粉末。将半导体与海藻酸盐制备成复合薄膜。利用x射线衍射和扫描电镜技术对N型和p型半导体的结构、形态和纯度进行了表征。通过光学表征，n型半导体的计算能带隙为2.80 eV, p型半导体的计算能带隙为1.90 eV。利用非线性电流-电压特性证实了所制备样品的pn结性质。然后，将两个柔性半导体摩擦配对用于TENG。通过垂直触点分离模式，基于P-N结的TENG在10 MΩ时的最大输出电压和电流分别为3.90 V和0.44µa，最大输出功率为0.35µW。综上所述，本工作实现了柔性P型和n型半导体的制备。在TENG结构中验证了获取机械能的可行性。这一想法对于使用新概念的柔性收获/传感设备的未来发展至关重要。关键词:p型半导体- n型半导体- n结摩擦纳米发电机披露声明作者未报告潜在利益冲突。本研究由KMITL资助，授权号为KREF156601。Supakarn wora的工作得到了蒙古库特国王理工学院(KMITL)科学学院的资助，资助项目为:RA 2565 - m - 001 /助教。S. Sriphan的工作由King Mongkut 's University of Technology North Bangkok资助，合约编号:kmutnb - 65 - 05。
{"title":"Development of Flexible Semiconductors Based on g-C <sub>3</sub> N <sub>4</sub> /Cu <sub>2</sub> O P–N Heterojunction for Triboelectric Nanogenerator Application","authors":"Supakarn Worathat, Utchawadee Pharino, Saichon Sriphan, Surasak Niemcharoen, Wisut Thitirungraung, Rangson Muanghlua, Te-Wei Chiu, Naratip Vittayakorn","doi":"10.1080/10584587.2023.2234568","DOIUrl":"https://doi.org/10.1080/10584587.2023.2234568","url":null,"abstract":"AbstractThis research aims to develop flexible semiconductors for triboelectric nanogenerator (TENG) applications. The sample powders of graphitic carbon nitride (g-C3N4) and copper (I) oxide (Cu2O) as N-type and P-type semiconductors, respectively, were synthesized. The semiconductors were prepared to be a composite film with alginate. The structure, morphology, and purity of the N- and P-type semiconductors were characterized using X-Ray diffraction and scanning electron microscopy techniques. Through the optical characterization, the N-type semiconductor showed the calculated energy band gap of 2.80 eV, while the P-type semiconductor was 1.90 eV. The P–N junction property of prepared samples was confirmed using a nonlinear current–voltage characteristic. After that, two flexible semiconductors were frictional paired for TENG. Through a vertical contact-separation mode, the P–N junction-based TENG produced a maximum output voltage and current of 3.90 V and 0.44 µA, respectively, with a maximum output power of 0.35 µW at 10 MΩ. In summary, the present work achieved the preparation of flexible P- and N-type semiconductors. The feasibility to harvest the mechanical energy was demonstrated in the TENG configuration. This idea is crucial for the future development of flexible harvesting/sensing devices using a novel concept.Keywords: P-type semiconductorN-type semiconductorP–N Junctiontriboelectric nanogenerator Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by KMITL under the Grant number KREF156601.The work of Supakarn Worathat thanks to funding support from the Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang (KMITL) under Grant no. RA/TA 2565-M-001. The work of S. Sriphan was funded by King Mongkut’s University of Technology North Bangkok, Contract no. KMUTNB-65-KNOW-05.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"222 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135246761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2239101
Berkay Kullukçu, Mohammad J. Bathaei, Muhammad Awais, Hadi Mirzajani, Levent Beker
Abstract This study presents a piezoelectric energy harvester made of poly(vinylidene fluoride-trifluoroethylene)/polyethylene terephthalate for use in structural health monitoring applications. The piezoelectric energy harvester was made of a layer of polyvinylidene fluoride-trifluoroethylene (PVDF/TrFE). In addition, PET sheets, double-sided micron-thick tapes, and PVDF-TrFE sheets were utilized in the fabrication of the device. The proposed device was characterized by measuring its output voltage and current. The output power of the harvester was sufficient to operate a MEMS pressure sensor under wind pressure, with a maximum current of 291.34 µA and a maximum voltage of 937.01 mV. The power value obtained was 272.99 µW.
{"title":"Piezoelectric PVDF-TrFE/PET Energy Harvesters for Structural Health Monitoring (SHM) Applications","authors":"Berkay Kullukçu, Mohammad J. Bathaei, Muhammad Awais, Hadi Mirzajani, Levent Beker","doi":"10.1080/10584587.2023.2239101","DOIUrl":"https://doi.org/10.1080/10584587.2023.2239101","url":null,"abstract":"Abstract This study presents a piezoelectric energy harvester made of poly(vinylidene fluoride-trifluoroethylene)/polyethylene terephthalate for use in structural health monitoring applications. The piezoelectric energy harvester was made of a layer of polyvinylidene fluoride-trifluoroethylene (PVDF/TrFE). In addition, PET sheets, double-sided micron-thick tapes, and PVDF-TrFE sheets were utilized in the fabrication of the device. The proposed device was characterized by measuring its output voltage and current. The output power of the harvester was sufficient to operate a MEMS pressure sensor under wind pressure, with a maximum current of 291.34 µA and a maximum voltage of 937.01 mV. The power value obtained was 272.99 µW.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134948581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2227048
Kh. M. Guliyeva, N. N. Mursakulov, N. A. Aliyeva, Y. I. Aliyev
Abstract A compound Cu2NiSeTe with cation-cation and anion-anion substitution has been synthesized. Structural phase analysis was carried out by XRD. The thermal properties of the resulting compound at high temperatures were studied. The studies were carried out on a Differential Scanning Calorimeter in the temperature range T = 20-1000 °C. Thermal transitions were observed at temperatures T = 144, 587, 647, 714 °C. These transitions were analyzed and the thermodynamic potentials were determined. According to the mechanism of phonon-phonon interaction, an increase in heat capacity at high temperatures was found.
{"title":"Synthesis, Structure and Thermal Properties of the Cu<sub>2</sub>NiSeTe","authors":"Kh. M. Guliyeva, N. N. Mursakulov, N. A. Aliyeva, Y. I. Aliyev","doi":"10.1080/10584587.2023.2227048","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227048","url":null,"abstract":"Abstract A compound Cu2NiSeTe with cation-cation and anion-anion substitution has been synthesized. Structural phase analysis was carried out by XRD. The thermal properties of the resulting compound at high temperatures were studied. The studies were carried out on a Differential Scanning Calorimeter in the temperature range T = 20-1000 °C. Thermal transitions were observed at temperatures T = 144, 587, 647, 714 °C. These transitions were analyzed and the thermodynamic potentials were determined. According to the mechanism of phonon-phonon interaction, an increase in heat capacity at high temperatures was found.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2227047
J. Li, M. Luo, Y. H. Shen
AbstractA wide-gap semiconductor of Yttria (Y2O3) doped with nonmetal elements (B, C, and N) are investigated by using the first-principles method. We mainly discuss the exchange coupling between two dopants and find that the exchange coupling in current cases are sensitive to the B-B, C-C, and N-N distance. Unitary ferromagnetic (FM) and antiferromagnetic (AFM) states have been observed in the two-B-doped and two-N-doped Y2O3 structures, respectively. Surprisingly, as the C-C distance increases, a transformation between FM and AFM has been found, which shows an RKKY-like interaction due to the p-d hybridization between the C dopant and intrinsic Y atoms.Keywords: Y2O3ferromagneticRKKY-like interactionDFT calculations Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingWe thank the National Supercomputer Center in Shenzhen. The work is supported by the Natural Science Foundation of Shanghai (Grant No. 19ZR1419800).
{"title":"Ruderman–Kittel–Kasuya–Yosida–like Ferromagnetism in Nonmetal Doped Y <sub>2</sub> O <sub>3</sub>","authors":"J. Li, M. Luo, Y. H. Shen","doi":"10.1080/10584587.2023.2227047","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227047","url":null,"abstract":"AbstractA wide-gap semiconductor of Yttria (Y2O3) doped with nonmetal elements (B, C, and N) are investigated by using the first-principles method. We mainly discuss the exchange coupling between two dopants and find that the exchange coupling in current cases are sensitive to the B-B, C-C, and N-N distance. Unitary ferromagnetic (FM) and antiferromagnetic (AFM) states have been observed in the two-B-doped and two-N-doped Y2O3 structures, respectively. Surprisingly, as the C-C distance increases, a transformation between FM and AFM has been found, which shows an RKKY-like interaction due to the p-d hybridization between the C dopant and intrinsic Y atoms.Keywords: Y2O3ferromagneticRKKY-like interactionDFT calculations Disclosure StatementNo potential conflict of interest was reported by the author(s).Additional informationFundingWe thank the National Supercomputer Center in Shenzhen. The work is supported by the Natural Science Foundation of Shanghai (Grant No. 19ZR1419800).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2227056
Babak Emdadi, Ahmed Asimov
AbstractIn recent years, films fabricated from poly (3, 4-ethylenedioxythiophene): poly (4-styrenesulfonate) (PEDOT: PSS) aqueous dispersions have attracted lot of attention due to their exceptional advantages of high transparency in the visible range, excellent thermal stability and aqueous solution processibility. The effect of annealing on the structural, and optical properties of films obtained by the spin coating method on glass substrates has been investigated. This work investigated the impact of second annealing on the structural, and optical properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) (PEDOT: PSS) thin films. Thin films PEDOT: PSS of about 150 nm thicknesses were deposited by sol-gel method spin coating technique at room temperature. The obtained films were annealed twice: by annealing at 110 °C temperature for 15 min, and at 170 °C within one hour. The films were characterized by X-ray diffraction (XRD), spectroscopic ellipsometry (SE), photoluminescence spectroscopy, and atomic force microscopy (AFM) methods. Studies have shown that second annealing has reduced defects, efficiently.Keywords: PEDOTconducting polymersX-ray diffraction analysisellipsometry investigationAFM image Disclosure StatementNo potential conflict of interest was reported by the author(s).
{"title":"Structural and Optical Properties of PEDOT: PSS","authors":"Babak Emdadi, Ahmed Asimov","doi":"10.1080/10584587.2023.2227056","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227056","url":null,"abstract":"AbstractIn recent years, films fabricated from poly (3, 4-ethylenedioxythiophene): poly (4-styrenesulfonate) (PEDOT: PSS) aqueous dispersions have attracted lot of attention due to their exceptional advantages of high transparency in the visible range, excellent thermal stability and aqueous solution processibility. The effect of annealing on the structural, and optical properties of films obtained by the spin coating method on glass substrates has been investigated. This work investigated the impact of second annealing on the structural, and optical properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) (PEDOT: PSS) thin films. Thin films PEDOT: PSS of about 150 nm thicknesses were deposited by sol-gel method spin coating technique at room temperature. The obtained films were annealed twice: by annealing at 110 °C temperature for 15 min, and at 170 °C within one hour. The films were characterized by X-ray diffraction (XRD), spectroscopic ellipsometry (SE), photoluminescence spectroscopy, and atomic force microscopy (AFM) methods. Studies have shown that second annealing has reduced defects, efficiently.Keywords: PEDOTconducting polymersX-ray diffraction analysisellipsometry investigationAFM image Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2192665
Fengdong Shi, Zhi Yuan, Min Wang, Jun Cui
AbstractWhen the cloud platform runs under heavy load for a long time, internal resources will be consumed and errors will accumulate continuously. As a result, the software aging phenomenon occurs, which ultimately degrades the performance and reliability of the software system. Aiming at the above problems, this paper proposes a hybrid model based on integrated variational mode decomposition, moving average free regression and long and short memory network (VMD-ARIMA-BILSTM) to predict the software aging problem. Firstly, the original resource utilization rate is decomposed into stationary time series and non-stationary time series by variational mode decomposition. Then, the advantages of moving average free regression and bidirectional long short-term memory network are used to predict stationary and non-stationary series respectively. Finally, the prediction results are reconstructed to obtain the final prediction results. Experimental results show that compared with single ARIMA and BI-LSTM, the hybrid model designed in this paper has higher prediction accuracy and faster convergence speed.Keywords: Cloud platformsoftware agingVMDARIMABILSTM Disclosure StatementNo potential conflict of interest was reported by the author(s).
{"title":"Research on Cloud Platform Software Aging Prediction Method Based on VMD-ARIMA-BilSTM Combined Model","authors":"Fengdong Shi, Zhi Yuan, Min Wang, Jun Cui","doi":"10.1080/10584587.2023.2192665","DOIUrl":"https://doi.org/10.1080/10584587.2023.2192665","url":null,"abstract":"AbstractWhen the cloud platform runs under heavy load for a long time, internal resources will be consumed and errors will accumulate continuously. As a result, the software aging phenomenon occurs, which ultimately degrades the performance and reliability of the software system. Aiming at the above problems, this paper proposes a hybrid model based on integrated variational mode decomposition, moving average free regression and long and short memory network (VMD-ARIMA-BILSTM) to predict the software aging problem. Firstly, the original resource utilization rate is decomposed into stationary time series and non-stationary time series by variational mode decomposition. Then, the advantages of moving average free regression and bidirectional long short-term memory network are used to predict stationary and non-stationary series respectively. Finally, the prediction results are reconstructed to obtain the final prediction results. Experimental results show that compared with single ARIMA and BI-LSTM, the hybrid model designed in this paper has higher prediction accuracy and faster convergence speed.Keywords: Cloud platformsoftware agingVMDARIMABILSTM Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2239098
Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade
AbstractRare-earth orthoferrites RFeO3 are important functional materials and are very promising due to their unique electrical properties. Amongst various orthoferrites systems, SmFeO3 is emerging as potential system having various multifunctional behaviour with structural modifications by doping or microstructural effect. In the present attempt, we explore SmFeO3 system and modify it by partially replacing Sm by Ce. We have synthesised pure SmFeO3 based system through Sol-Gel one of the combustion method. X-ray diffraction study confirms the formation of pure and highly crystalline single phase without any impurity. To get more clarity about structural features, Rietveld Refinement has been carried out using by Full-Proof Software which confirms the formation of orthorhombic structure with Pbnm space group. Dielectric study confirms that Ce doping in SmFeO3 modify dielectric constant from one order to two order. The response of polarisation with respect to applied electric field has been studied by P-E loop tracer. The remanent polarisation (pr) enhanced from 0.040 to 0.050 µC/cm2 for x = 0.10 after applied maximum electric field. An improvement in the ferroelectric loop was obtained due to the suppression of oxygen vacancies and the reduced leakage current density (10 − 8 A/cm2 at 20 kV/cm).Keywords: Orthoferritessol gelperovskitedielectric properties AcknowledgmentAMRL laboratory, Dept. of Physics, RTMNU, Nagpur, India is acknowledged for providing the Ferroelectric (P-E loop) as well as Dielectric characterization facility.Disclosure StatementNo potential conflict of interest was reported by the author(s).
{"title":"Modification of Structural and Dielectric Properties of SmFeO <sub>3</sub> Orthoferrites System by Ce Doping","authors":"Uma Gaikwad, Smita Acharya, Shraddha Shirbhate, Chitra Khade","doi":"10.1080/10584587.2023.2239098","DOIUrl":"https://doi.org/10.1080/10584587.2023.2239098","url":null,"abstract":"AbstractRare-earth orthoferrites RFeO3 are important functional materials and are very promising due to their unique electrical properties. Amongst various orthoferrites systems, SmFeO3 is emerging as potential system having various multifunctional behaviour with structural modifications by doping or microstructural effect. In the present attempt, we explore SmFeO3 system and modify it by partially replacing Sm by Ce. We have synthesised pure SmFeO3 based system through Sol-Gel one of the combustion method. X-ray diffraction study confirms the formation of pure and highly crystalline single phase without any impurity. To get more clarity about structural features, Rietveld Refinement has been carried out using by Full-Proof Software which confirms the formation of orthorhombic structure with Pbnm space group. Dielectric study confirms that Ce doping in SmFeO3 modify dielectric constant from one order to two order. The response of polarisation with respect to applied electric field has been studied by P-E loop tracer. The remanent polarisation (pr) enhanced from 0.040 to 0.050 µC/cm2 for x = 0.10 after applied maximum electric field. An improvement in the ferroelectric loop was obtained due to the suppression of oxygen vacancies and the reduced leakage current density (10 − 8 A/cm2 at 20 kV/cm).Keywords: Orthoferritessol gelperovskitedielectric properties AcknowledgmentAMRL laboratory, Dept. of Physics, RTMNU, Nagpur, India is acknowledged for providing the Ferroelectric (P-E loop) as well as Dielectric characterization facility.Disclosure StatementNo potential conflict of interest was reported by the author(s).","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the increase in scaling of transistors in nanometer regime, various short channel effects are emerging in transistor operation that are required to resolved while putting conventional transistor to any practical application. Various device modifications and structure improvizations have been made and reported by the researchers to overcome the short channel effects and replace the conventional MOSFET with an optimized device in practical circuit applications. The device structure proposed in this work incorporates the negative capacitance phenomenon for making subthreshold swing steeper and enhancing current ratio of TFET. Further the device dimensions are being optimized to get improvised characteristics and best results are obtained at 3 nm thick BaTiO3 Ferroelectric material for making negative capacitance gate stack. In this paper, negative capacitance TFET so formed is used for implementing inverter and 1 T DRAM cell. Results obtained shows that the inverter and DRAM cell operates at a very lower supply voltage and are more suitable for low power applications as compared to conventional circuits.
{"title":"Impact of Ferroelectric Material BaTiO<sub>3</sub> on Negative Capacitance TFET Device and Its Circuit Application","authors":"Amandeep Singh, Sanjeet Kumar Sinha, Sweta Chander","doi":"10.1080/10584587.2023.2227054","DOIUrl":"https://doi.org/10.1080/10584587.2023.2227054","url":null,"abstract":"With the increase in scaling of transistors in nanometer regime, various short channel effects are emerging in transistor operation that are required to resolved while putting conventional transistor to any practical application. Various device modifications and structure improvizations have been made and reported by the researchers to overcome the short channel effects and replace the conventional MOSFET with an optimized device in practical circuit applications. The device structure proposed in this work incorporates the negative capacitance phenomenon for making subthreshold swing steeper and enhancing current ratio of TFET. Further the device dimensions are being optimized to get improvised characteristics and best results are obtained at 3 nm thick BaTiO3 Ferroelectric material for making negative capacitance gate stack. In this paper, negative capacitance TFET so formed is used for implementing inverter and 1 T DRAM cell. Results obtained shows that the inverter and DRAM cell operates at a very lower supply voltage and are more suitable for low power applications as compared to conventional circuits.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2023.2239096
Syed Mahboob, None Rizwana
Ba(NdxTi(1-2x)Nbx)O3 and (Na0.5Bi0.5)(NdyTi1-2yNby)O3 relaxor ferroelectric materials were prepared through solid state sintering route. The polarization as a function of electric field (PE loops) were measured with Radiant technologies PE loop tracer. In the present studies we have extended the surface charge density studies of metal oxide semiconductor (MOS) structure to the polarization studies of metal ferroelectric and metal (MFM) structure in bulk form by combining it with the modified Glazounov and Arrhenius equations. The simulation is in good agreement the experimental data. In the case of Ba(NdxTi(1-2x)Nbx)O3 ceramics the value of dipole moment (p) are 2.24x10−26 C.m, 1.80x10−26 C.m, 2.23x10−26 C.m & 2.21x 10−26 C.m for x = 0.025, 0.05, 0.1 & 0.2, respectively. The values of surface potential (Ψp) are 466 meV, 503 meV, 552 meV & 505 meV for x = 0.025, 0.05, 0.1 & 0.2, respectively.
{"title":"Extension of Surface Charge Density Studies of Metal Oxide Semiconductor (MOS) Structure to Polarization Studies of Metal Ferroelectric Metal (MFM) Structure in Bulk Form: Experimental and Simulation of Polarization Data","authors":"Syed Mahboob, None Rizwana","doi":"10.1080/10584587.2023.2239096","DOIUrl":"https://doi.org/10.1080/10584587.2023.2239096","url":null,"abstract":"Ba(NdxTi(1-2x)Nbx)O3 and (Na0.5Bi0.5)(NdyTi1-2yNby)O3 relaxor ferroelectric materials were prepared through solid state sintering route. The polarization as a function of electric field (PE loops) were measured with Radiant technologies PE loop tracer. In the present studies we have extended the surface charge density studies of metal oxide semiconductor (MOS) structure to the polarization studies of metal ferroelectric and metal (MFM) structure in bulk form by combining it with the modified Glazounov and Arrhenius equations. The simulation is in good agreement the experimental data. In the case of Ba(NdxTi(1-2x)Nbx)O3 ceramics the value of dipole moment (p) are 2.24x10−26 C.m, 1.80x10−26 C.m, 2.23x10−26 C.m & 2.21x 10−26 C.m for x = 0.025, 0.05, 0.1 & 0.2, respectively. The values of surface potential (Ψp) are 466 meV, 503 meV, 552 meV & 505 meV for x = 0.025, 0.05, 0.1 & 0.2, respectively.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-09-02DOI: 10.1080/10584587.2022.2143187
Shenghong Mao, Wenxiao Su, Chunyuan Liu, Fu Zhao, Hongxia Zhao, Xiaoping Zheng
Abstract Lithium-sulfur batteries have received lots of attention due to their high energy density and cheap material. The poor electrical conductivity and slow electrochemical kinetics of sulfur hinder their application. Here, we in situ grow Ni12P5 on carbon nanotube to prepare composites as sulfur host. Electrochemical tests show that Ni12P5 acts as an electrocatalyst in the lithium-sulfur batteries, initiating the oxidation of Li2S6 and Li2S4 at higher potentials, significantly improving the reaction kinetics during charging and discharging. The CNT@Ni12P5/S composite exhibited 1352 mAh/g initial discharge capacity at 0.1 C and a retention capacity of 85% after 100 cycles at 0.2 C.
{"title":"Catalytic Conversion of Ni <sub>12</sub> P <sub>5</sub> in Situ on the Surface of Carbon Nanotubes to Promote Polysulfide Conversion in High-Performance Lithium-Sulfur Batteries","authors":"Shenghong Mao, Wenxiao Su, Chunyuan Liu, Fu Zhao, Hongxia Zhao, Xiaoping Zheng","doi":"10.1080/10584587.2022.2143187","DOIUrl":"https://doi.org/10.1080/10584587.2022.2143187","url":null,"abstract":"Abstract Lithium-sulfur batteries have received lots of attention due to their high energy density and cheap material. The poor electrical conductivity and slow electrochemical kinetics of sulfur hinder their application. Here, we in situ grow Ni12P5 on carbon nanotube to prepare composites as sulfur host. Electrochemical tests show that Ni12P5 acts as an electrocatalyst in the lithium-sulfur batteries, initiating the oxidation of Li2S6 and Li2S4 at higher potentials, significantly improving the reaction kinetics during charging and discharging. The CNT@Ni12P5/S composite exhibited 1352 mAh/g initial discharge capacity at 0.1 C and a retention capacity of 85% after 100 cycles at 0.2 C.","PeriodicalId":13686,"journal":{"name":"Integrated Ferroelectrics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134968645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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