Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355004
A. Karabutov, S. Gordeev, V. Ralchenko, S. B. Korchagina, A. P. Dementjev, A. Chakhovskoi
Improvement of diamond nanocomposite field emitters by oxidation is studied. Results show that the oxidized composites exhibit lower emission threshold fields E/sub th/=1-2 V//spl mu/m as measured with a flat screen technique. The emission uniformity (the number of emission sites per unite area) was also improved. The composites with low sp/sup 2/-bonded carbon content, i.e. more porous samples, show better results. The structure of the nanocomposites was studied using microRaman spectroscopy, SEM, and Auger electron spectroscopy. Electronic properties of the emission centers (work function, electrical conductivity, topography and emission intensity) were investigated with a special STM device. The possible mechanisms of the emission improvement by oxidation in this two-phase carbon system are also discussed.
{"title":"Improvement of diamond nanocomposite field emitters by oxidation","authors":"A. Karabutov, S. Gordeev, V. Ralchenko, S. B. Korchagina, A. P. Dementjev, A. Chakhovskoi","doi":"10.1109/IVNC.2004.1355004","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355004","url":null,"abstract":"Improvement of diamond nanocomposite field emitters by oxidation is studied. Results show that the oxidized composites exhibit lower emission threshold fields E/sub th/=1-2 V//spl mu/m as measured with a flat screen technique. The emission uniformity (the number of emission sites per unite area) was also improved. The composites with low sp/sup 2/-bonded carbon content, i.e. more porous samples, show better results. The structure of the nanocomposites was studied using microRaman spectroscopy, SEM, and Auger electron spectroscopy. Electronic properties of the emission centers (work function, electrical conductivity, topography and emission intensity) were investigated with a special STM device. The possible mechanisms of the emission improvement by oxidation in this two-phase carbon system are also discussed.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128249575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
D. Noda, M. Hatakeyama, M. Kyogoku, K. Ikushima, K. Sawada, M. Ishida
We have fabricated the local vacuum package with Si field emitter array on Si substrate. To keep the pressure for electron emission, the titanium getter of evaporation type was made a bridge structure with Si field emitter array in local vacuum package. The local vacuum package technique adapted to the IC process for on-chip device. Therefore, this technique is very useful for many applications with high performance.
{"title":"Fabrication of Si field emitter array in local vacuum package","authors":"D. Noda, M. Hatakeyama, M. Kyogoku, K. Ikushima, K. Sawada, M. Ishida","doi":"10.1116/1.1851533","DOIUrl":"https://doi.org/10.1116/1.1851533","url":null,"abstract":"We have fabricated the local vacuum package with Si field emitter array on Si substrate. To keep the pressure for electron emission, the titanium getter of evaporation type was made a bridge structure with Si field emitter array in local vacuum package. The local vacuum package technique adapted to the IC process for on-chip device. Therefore, this technique is very useful for many applications with high performance.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128290025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354926
A. Berrios, J. D. de Jesus, G. Morell
In this work, a general finite element software has been used to analyze the electrostatic field in various experimental configurations employed for measuring the field emission properties of planar emitters. The configurations studied are: (1) the metallic sphere-anode, (2) the cylindrical probe with spherically rounded tip, (3) the cylindrical probe with flat tip, (4) the flat anode separated from the cathode by insulating round spacers touching both cathode and anode, (5) flat spacers touching both cathode and anode, and (6) flat spacers touching the anode but not touching the cathode. The validity of the ideal capacitor approximation was investigated for the cathode surface electric field for each configuration using typical dimensions for each of them, and obtained the magnitude of the electric field near critical areas that could lead to residual gas ionization, dielectric breakdown and emission of electrons from non-desired cathode areas.
{"title":"Numerical study of the electrostatic field gradients present in various planar emitter field emission configurations relevant to experimental research","authors":"A. Berrios, J. D. de Jesus, G. Morell","doi":"10.1109/IVNC.2004.1354926","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354926","url":null,"abstract":"In this work, a general finite element software has been used to analyze the electrostatic field in various experimental configurations employed for measuring the field emission properties of planar emitters. The configurations studied are: (1) the metallic sphere-anode, (2) the cylindrical probe with spherically rounded tip, (3) the cylindrical probe with flat tip, (4) the flat anode separated from the cathode by insulating round spacers touching both cathode and anode, (5) flat spacers touching both cathode and anode, and (6) flat spacers touching the anode but not touching the cathode. The validity of the ideal capacitor approximation was investigated for the cathode surface electric field for each configuration using typical dimensions for each of them, and obtained the magnitude of the electric field near critical areas that could lead to residual gas ionization, dielectric breakdown and emission of electrons from non-desired cathode areas.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130025770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354944
V. Semet, R. Mouton, V. Binh
Total field emission current in function of applied voltage, known as (I-V) characteristics, from planar cathodes were currently measured with a scanning anode field emission microscope (SAFEM). As the field distribution created by the probe over the flat cathode surface is not uniform and depends on the exact distance d between the probe and the surface, the measured I-V characteristics are not directly interpretable. We present a methodology to transform the I(V) measurements into the corresponding current density J in function of actual field F for field emission, the (J-F) characteristics that must be used for any quantitative interpretations.
{"title":"Scanning anode field emission microscopy for studies of planar cathodes","authors":"V. Semet, R. Mouton, V. Binh","doi":"10.1109/IVNC.2004.1354944","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354944","url":null,"abstract":"Total field emission current in function of applied voltage, known as (I-V) characteristics, from planar cathodes were currently measured with a scanning anode field emission microscope (SAFEM). As the field distribution created by the probe over the flat cathode surface is not uniform and depends on the exact distance d between the probe and the surface, the measured I-V characteristics are not directly interpretable. We present a methodology to transform the I(V) measurements into the corresponding current density J in function of actual field F for field emission, the (J-F) characteristics that must be used for any quantitative interpretations.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123914595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354880
N. Badi, K. He, A. Nair, A. Bensaoula
The development of functional field emission based pressure microsensors is reported. The fabrication and development of both electrical and mechanical parts of the pressure sensor device are investigated; these are the cold cathode emitters and the sensing membranes, respectively. In order to avoid expensive process runs and optimize the design to meet the sensor requirements, simulation work was performed using commercially available FEMLAB package software. Realistic field emission characteristics from sulfur doped boron nitride (S-BN) cold cathode were used to model the current density distribution in the deflected diaphragm. The total current output was achieved by integrating the current density over the entire area of the membrane as a function of the external pressure.
{"title":"Design and fabrication of field emission-based pressure microsensors","authors":"N. Badi, K. He, A. Nair, A. Bensaoula","doi":"10.1109/IVNC.2004.1354880","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354880","url":null,"abstract":"The development of functional field emission based pressure microsensors is reported. The fabrication and development of both electrical and mechanical parts of the pressure sensor device are investigated; these are the cold cathode emitters and the sensing membranes, respectively. In order to avoid expensive process runs and optimize the design to meet the sensor requirements, simulation work was performed using commercially available FEMLAB package software. Realistic field emission characteristics from sulfur doped boron nitride (S-BN) cold cathode were used to model the current density distribution in the deflected diaphragm. The total current output was achieved by integrating the current density over the entire area of the membrane as a function of the external pressure.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117086066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354966
G. Fursey, V. I. Petrick, D. Novikov, A. V. Kotcheryzhenkov, A.N. Krosovskii
The characteristics of field emission from carbon nanoclusters (mainly nanotubes with open ends) produced by cold destruction from natural graphite are investigated. The specimen employed in the study is a coating of carbon nanocluster mixture in N-methylpirolidone upon a tungsten electrode. Field emission microscopy, electron microscopy, electron diffraction and IR spectroscopy are employed in structure studies of the carbon specimen. Investigation of the emission properties of the specimens confirmed that field emission from these materials takes place in electric fields more than two orders of magnitude lower than in metals and semiconductors. The mechanism of electron emission from these materials is evidently linked to tunneling emission.
{"title":"A study of field emission from supramolecular carbon structures","authors":"G. Fursey, V. I. Petrick, D. Novikov, A. V. Kotcheryzhenkov, A.N. Krosovskii","doi":"10.1109/IVNC.2004.1354966","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354966","url":null,"abstract":"The characteristics of field emission from carbon nanoclusters (mainly nanotubes with open ends) produced by cold destruction from natural graphite are investigated. The specimen employed in the study is a coating of carbon nanocluster mixture in N-methylpirolidone upon a tungsten electrode. Field emission microscopy, electron microscopy, electron diffraction and IR spectroscopy are employed in structure studies of the carbon specimen. Investigation of the emission properties of the specimens confirmed that field emission from these materials takes place in electric fields more than two orders of magnitude lower than in metals and semiconductors. The mechanism of electron emission from these materials is evidently linked to tunneling emission.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124750067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354997
W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A. Hosono, S. Okuda
High power laser irradiation with a stripe beam is the key technology for large diagonal carbon nanotube (CNT) cathode surface treatment. CNT cathodes were fabricated on ITO/glass substrates by screen-printing with conventional organic binder. Screen-printed CNT cathodes were irradiated by KrF (248 nm) and XeCl (308 nm) excimer lasers. The spot shape was adjusted as a spot of 8/spl times/8 mm/sup 2/ or a stripe of 200/spl times/0.4 mm/sup 2/. The stripe beam was irradiated in a step of 0.2, 0.3, 0.4, 0.5 and 0.8 mm. The emission characteristics were measured in a vacuum chamber with a pressure of 10-5 Pa. The emission patterns on a phosphor screen were observed by a CCD camera. The turn-on-field became the lowest with a step of 0.5 mm. The turn-on-field became as low as 0.7 V//spl mu/m and the emission density became as high as 1.5 mA/cm/sup 2/ at a field of 2.5 V//spl mu/m by KrF laser irradiation.
{"title":"Laser surface treatment of CNT cathodes for large diagonal FEDs","authors":"W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A. Hosono, S. Okuda","doi":"10.1109/IVNC.2004.1354997","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354997","url":null,"abstract":"High power laser irradiation with a stripe beam is the key technology for large diagonal carbon nanotube (CNT) cathode surface treatment. CNT cathodes were fabricated on ITO/glass substrates by screen-printing with conventional organic binder. Screen-printed CNT cathodes were irradiated by KrF (248 nm) and XeCl (308 nm) excimer lasers. The spot shape was adjusted as a spot of 8/spl times/8 mm/sup 2/ or a stripe of 200/spl times/0.4 mm/sup 2/. The stripe beam was irradiated in a step of 0.2, 0.3, 0.4, 0.5 and 0.8 mm. The emission characteristics were measured in a vacuum chamber with a pressure of 10-5 Pa. The emission patterns on a phosphor screen were observed by a CCD camera. The turn-on-field became the lowest with a step of 0.5 mm. The turn-on-field became as low as 0.7 V//spl mu/m and the emission density became as high as 1.5 mA/cm/sup 2/ at a field of 2.5 V//spl mu/m by KrF laser irradiation.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123445553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito
A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.
{"title":"Selective growth of carbon nanotubes on silicon protrusions","authors":"H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito","doi":"10.1116/1.1885008","DOIUrl":"https://doi.org/10.1116/1.1885008","url":null,"abstract":"A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122850151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354936
M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa, J. Itoh
A HfC-coated poly-Si field emitter array was fabricated to be suitable for display applications using glass substrates. Low temperature Ar ion sputtering improved the emission reliability by tip sharpening while the HfC coating solved the uniformity and emission lifetime problems.
{"title":"Low temperature fabrication of poly-Si FEA for display application","authors":"M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa, J. Itoh","doi":"10.1109/IVNC.2004.1354936","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354936","url":null,"abstract":"A HfC-coated poly-Si field emitter array was fabricated to be suitable for display applications using glass substrates. Low temperature Ar ion sputtering improved the emission reliability by tip sharpening while the HfC coating solved the uniformity and emission lifetime problems.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131239992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354927
Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Umisedo, S. Sakai, N. Nagai
The effect of the number of tips (4000 and 16000) and gate aperture (1.3 /spl mu/m and 1.6 /spl mu/m) on the energy distribution of a silicon field emitter array were investigated. Energy distribution of the emitted electrons was measured in ultrahigh vacuum using an electrostatic energy analyzer. Results showed that narrower gate aperture and less tip-numbers are necessary for narrower energy spread and smaller peak energy shift.
{"title":"Electron emission properties of gated silicon field emitter arrays for charge neutralization device in ion implantation system","authors":"Y. Gotoh, K. Nakamura, T. Kojima, H. Tsuji, J. Ishikawa, T. Ikejiri, S. Umisedo, S. Sakai, N. Nagai","doi":"10.1109/IVNC.2004.1354927","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354927","url":null,"abstract":"The effect of the number of tips (4000 and 16000) and gate aperture (1.3 /spl mu/m and 1.6 /spl mu/m) on the energy distribution of a silicon field emitter array were investigated. Energy distribution of the emitted electrons was measured in ultrahigh vacuum using an electrostatic energy analyzer. Results showed that narrower gate aperture and less tip-numbers are necessary for narrower energy spread and smaller peak energy shift.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123583032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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