H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito
A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.
{"title":"Selective growth of carbon nanotubes on silicon protrusions","authors":"H. Sato, K. Hata, H. Miyake, K. Hiramatsu, Y. Saito","doi":"10.1116/1.1885008","DOIUrl":"https://doi.org/10.1116/1.1885008","url":null,"abstract":"A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122850151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354922
B.X. Chen, G.Y. Liu, S. Xia, Y. Ding, H.Y. Li, J.S. Wu, Y.J. Lu
In this paper, the formulae of the potential distribution and the formulae of the electron transit time were derived mathematically for an ideal cylindrical vacuum microelectronics diode by using of the Laplace equation and the basic definition. By using the formulae, an idea about an equivalent vacuum microelectronics diode was introduced and the electron transit time of an ideal cylindrical vacuum microelectronics (IC-VME) triode was further estimated.
{"title":"Calculations concerning the electron transit time for an ideal cylindrical vacuum microelectronics diode","authors":"B.X. Chen, G.Y. Liu, S. Xia, Y. Ding, H.Y. Li, J.S. Wu, Y.J. Lu","doi":"10.1109/IVNC.2004.1354922","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354922","url":null,"abstract":"In this paper, the formulae of the potential distribution and the formulae of the electron transit time were derived mathematically for an ideal cylindrical vacuum microelectronics diode by using of the Laplace equation and the basic definition. By using the formulae, an idea about an equivalent vacuum microelectronics diode was introduced and the electron transit time of an ideal cylindrical vacuum microelectronics (IC-VME) triode was further estimated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121943062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354914
P. Wu, S. Deng, Jun Chen, J. She, N. Xu
In this paper, the field emission images of multiwalled carbon nanotubes (MWCNTs) was studied using field emission microscopy (FEM). The formation of observed images by electron diffraction theory was also explained in this study.
{"title":"Study of field emission microscopic images originated from coherent scattering of multiwalled carbon nanotubes","authors":"P. Wu, S. Deng, Jun Chen, J. She, N. Xu","doi":"10.1109/IVNC.2004.1354914","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354914","url":null,"abstract":"In this paper, the field emission images of multiwalled carbon nanotubes (MWCNTs) was studied using field emission microscopy (FEM). The formation of observed images by electron diffraction theory was also explained in this study.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114979275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354906
C. Poa, S. Silva
In this article, the modeling performed using Silvaco, Atlas device simulation was reported, where a new kind of enhancement mechanism within the FE process in hydrogenated amorphous silicon (a-Si:H) was proposed. This model is equally applicable to all disordered and nano-crystalline materials. In particular, internal field enhancement where a conductive region is embedded in an insulating matrix. The simulation setup consists of a 0.1 /spl mu/m thick a-Si:H film on a highly doped silicon substrate and a vacuum gap of 0.5 /spl mu/m for the unmodified control sample. The set-up also shows that a conductive filament of 10 nm diameter is incorporated into the bulk a-Si:H thin film.
{"title":"Effect of conductive filaments on the electron emission properties in cathodes","authors":"C. Poa, S. Silva","doi":"10.1109/IVNC.2004.1354906","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354906","url":null,"abstract":"In this article, the modeling performed using Silvaco, Atlas device simulation was reported, where a new kind of enhancement mechanism within the FE process in hydrogenated amorphous silicon (a-Si:H) was proposed. This model is equally applicable to all disordered and nano-crystalline materials. In particular, internal field enhancement where a conductive region is embedded in an insulating matrix. The simulation setup consists of a 0.1 /spl mu/m thick a-Si:H film on a highly doped silicon substrate and a vacuum gap of 0.5 /spl mu/m for the unmodified control sample. The set-up also shows that a conductive filament of 10 nm diameter is incorporated into the bulk a-Si:H thin film.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127189789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354958
Y. Désières, P. Nicolas, F. Sermet, F. Geffraye, S. Gidon
In this study, the numerical results obtained on a single Molybdenum Spindt-type emitter through electrostatic finite-element modelling, Fowler-Nordheim calculations, and electron trajectory simulation are presented. These simulation results are correlated to experimental results on electrical characteristics as well as beam intensity profile of a single tip. Electrostatic modelling of single Mo tips shows that the measured beam characteristics cannot be described without taking into account nanometric protuberances at the surface of the tip. Electric fields computed from a conical tip with a smooth surface are far lower than those which can explain the measured electronic emission. Protuberances at the apex of the tip provide a second level of amplification of the electric field and are clearly observed at the apex of the tip. Fowler-Nordheim standard theory emission parameters (emissive surface, mean electric field) extracted from current-voltage characterizations confirm that a multi-stage amplification mechanism fits with the observed current levels. The spatial distribution of the beam intensity is clearly the sum of the contributions of individual emission sites on the surface of the tip.
{"title":"Optical and electrical studies of a single Spindt-type field emitter","authors":"Y. Désières, P. Nicolas, F. Sermet, F. Geffraye, S. Gidon","doi":"10.1109/IVNC.2004.1354958","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354958","url":null,"abstract":"In this study, the numerical results obtained on a single Molybdenum Spindt-type emitter through electrostatic finite-element modelling, Fowler-Nordheim calculations, and electron trajectory simulation are presented. These simulation results are correlated to experimental results on electrical characteristics as well as beam intensity profile of a single tip. Electrostatic modelling of single Mo tips shows that the measured beam characteristics cannot be described without taking into account nanometric protuberances at the surface of the tip. Electric fields computed from a conical tip with a smooth surface are far lower than those which can explain the measured electronic emission. Protuberances at the apex of the tip provide a second level of amplification of the electric field and are clearly observed at the apex of the tip. Fowler-Nordheim standard theory emission parameters (emissive surface, mean electric field) extracted from current-voltage characterizations confirm that a multi-stage amplification mechanism fits with the observed current levels. The spatial distribution of the beam intensity is clearly the sum of the contributions of individual emission sites on the surface of the tip.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126777192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354891
A. Hashim, A. Ray, D. Barratt, A.K. Hassan
The influence of the activation time and temperature on electrical properties of a new type of cathodes was investigated. Electrical results were interpreted in terms of the changes in the surface morphology and composition consequent upon the activation process.
研究了活化时间和温度对一种新型阴极电性能的影响。电学结果被解释为在活化过程中表面形态和组成的变化。
{"title":"The effect of the high and low activation temperature on the conduction of thermionic oxide cathodes for CRT applications","authors":"A. Hashim, A. Ray, D. Barratt, A.K. Hassan","doi":"10.1109/IVNC.2004.1354891","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354891","url":null,"abstract":"The influence of the activation time and temperature on electrical properties of a new type of cathodes was investigated. Electrical results were interpreted in terms of the changes in the surface morphology and composition consequent upon the activation process.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121321268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354966
G. Fursey, V. I. Petrick, D. Novikov, A. V. Kotcheryzhenkov, A.N. Krosovskii
The characteristics of field emission from carbon nanoclusters (mainly nanotubes with open ends) produced by cold destruction from natural graphite are investigated. The specimen employed in the study is a coating of carbon nanocluster mixture in N-methylpirolidone upon a tungsten electrode. Field emission microscopy, electron microscopy, electron diffraction and IR spectroscopy are employed in structure studies of the carbon specimen. Investigation of the emission properties of the specimens confirmed that field emission from these materials takes place in electric fields more than two orders of magnitude lower than in metals and semiconductors. The mechanism of electron emission from these materials is evidently linked to tunneling emission.
{"title":"A study of field emission from supramolecular carbon structures","authors":"G. Fursey, V. I. Petrick, D. Novikov, A. V. Kotcheryzhenkov, A.N. Krosovskii","doi":"10.1109/IVNC.2004.1354966","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354966","url":null,"abstract":"The characteristics of field emission from carbon nanoclusters (mainly nanotubes with open ends) produced by cold destruction from natural graphite are investigated. The specimen employed in the study is a coating of carbon nanocluster mixture in N-methylpirolidone upon a tungsten electrode. Field emission microscopy, electron microscopy, electron diffraction and IR spectroscopy are employed in structure studies of the carbon specimen. Investigation of the emission properties of the specimens confirmed that field emission from these materials takes place in electric fields more than two orders of magnitude lower than in metals and semiconductors. The mechanism of electron emission from these materials is evidently linked to tunneling emission.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124750067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354926
A. Berrios, J. D. de Jesus, G. Morell
In this work, a general finite element software has been used to analyze the electrostatic field in various experimental configurations employed for measuring the field emission properties of planar emitters. The configurations studied are: (1) the metallic sphere-anode, (2) the cylindrical probe with spherically rounded tip, (3) the cylindrical probe with flat tip, (4) the flat anode separated from the cathode by insulating round spacers touching both cathode and anode, (5) flat spacers touching both cathode and anode, and (6) flat spacers touching the anode but not touching the cathode. The validity of the ideal capacitor approximation was investigated for the cathode surface electric field for each configuration using typical dimensions for each of them, and obtained the magnitude of the electric field near critical areas that could lead to residual gas ionization, dielectric breakdown and emission of electrons from non-desired cathode areas.
{"title":"Numerical study of the electrostatic field gradients present in various planar emitter field emission configurations relevant to experimental research","authors":"A. Berrios, J. D. de Jesus, G. Morell","doi":"10.1109/IVNC.2004.1354926","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354926","url":null,"abstract":"In this work, a general finite element software has been used to analyze the electrostatic field in various experimental configurations employed for measuring the field emission properties of planar emitters. The configurations studied are: (1) the metallic sphere-anode, (2) the cylindrical probe with spherically rounded tip, (3) the cylindrical probe with flat tip, (4) the flat anode separated from the cathode by insulating round spacers touching both cathode and anode, (5) flat spacers touching both cathode and anode, and (6) flat spacers touching the anode but not touching the cathode. The validity of the ideal capacitor approximation was investigated for the cathode surface electric field for each configuration using typical dimensions for each of them, and obtained the magnitude of the electric field near critical areas that could lead to residual gas ionization, dielectric breakdown and emission of electrons from non-desired cathode areas.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130025770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354936
M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa, J. Itoh
A HfC-coated poly-Si field emitter array was fabricated to be suitable for display applications using glass substrates. Low temperature Ar ion sputtering improved the emission reliability by tip sharpening while the HfC coating solved the uniformity and emission lifetime problems.
{"title":"Low temperature fabrication of poly-Si FEA for display application","authors":"M. Nagao, Y. Sacho, S. Kanemaru, T. Matsukawa, J. Itoh","doi":"10.1109/IVNC.2004.1354936","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354936","url":null,"abstract":"A HfC-coated poly-Si field emitter array was fabricated to be suitable for display applications using glass substrates. Low temperature Ar ion sputtering improved the emission reliability by tip sharpening while the HfC coating solved the uniformity and emission lifetime problems.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131239992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354984
Lei Wei, Xiaobing Zhang, Xuedong Zhou, Guodong Yang, Qilong Wang, Y. Yang, M. Xie
To make the driving electronic circuit of a field emission display device simple and cheap, the driving voltage of the FED has to be small. In this paper, a triode structure of carbon nanotube array with the insulator tunnels was analysed. In a normal triode structure, the electrons are accelerated when they pass through the aperture of the gate electrode. Therefore, driving voltage applied on the gate electrode is a little high. To decrease the driving voltage, the use of secondary electrons was attempted. Because the energy of the secondary electron is much smaller than that of the primary electrons, only a weak electric field is needed to control the movement of the secondary electrons. Consequently, the driving voltage of this triode can be smaller than that of the normal triode. In this structure, an insulator cone was used to separate the cathode and the gate. The secondary electrons are generated on the insulator wall. The structure was further modified to prevent some primary electrons from passing through the gate aperture. The driving voltage decreased further.
{"title":"A triode of FED with low driving voltage","authors":"Lei Wei, Xiaobing Zhang, Xuedong Zhou, Guodong Yang, Qilong Wang, Y. Yang, M. Xie","doi":"10.1109/IVNC.2004.1354984","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354984","url":null,"abstract":"To make the driving electronic circuit of a field emission display device simple and cheap, the driving voltage of the FED has to be small. In this paper, a triode structure of carbon nanotube array with the insulator tunnels was analysed. In a normal triode structure, the electrons are accelerated when they pass through the aperture of the gate electrode. Therefore, driving voltage applied on the gate electrode is a little high. To decrease the driving voltage, the use of secondary electrons was attempted. Because the energy of the secondary electron is much smaller than that of the primary electrons, only a weak electric field is needed to control the movement of the secondary electrons. Consequently, the driving voltage of this triode can be smaller than that of the normal triode. In this structure, an insulator cone was used to separate the cathode and the gate. The secondary electrons are generated on the insulator wall. The structure was further modified to prevent some primary electrons from passing through the gate aperture. The driving voltage decreased further.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124928988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：