Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354889
Y. Gotoh, Y. Kawamura, K. Ishizu, H. Tsuji, J. Ishikawa, S. Nakata, S. Okuda
Electron emission property of the CNTs was investigated with and without laser irradiation, in order to investigate the mechanism of alteration of emission properties due to laser irradiation. Analysis was made with an aid of S-K analysis.
{"title":"Seppen-Katamuki analysis of electron emission from chemical vapor deposited multiwall carbon nanotubes with and without laser irradiation","authors":"Y. Gotoh, Y. Kawamura, K. Ishizu, H. Tsuji, J. Ishikawa, S. Nakata, S. Okuda","doi":"10.1109/IVNC.2004.1354889","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354889","url":null,"abstract":"Electron emission property of the CNTs was investigated with and without laser irradiation, in order to investigate the mechanism of alteration of emission properties due to laser irradiation. Analysis was made with an aid of S-K analysis.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134358575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354915
Zhang Yuning, Lei Wei, Zhang Xiaobing, Liu Ao, Zong Geng, M. Xiaoyan, W. Qilong
In this paper, some optimum field emission displays (FEDs) elements are proposed using numerical analyses to improve the emission performances, to decrease the driving voltage and to improve other driving performances of these devices with different structures like diode structure, normal-gate structure, and under-gate structure.
{"title":"Study of the driving performances with different structures of field emission displays","authors":"Zhang Yuning, Lei Wei, Zhang Xiaobing, Liu Ao, Zong Geng, M. Xiaoyan, W. Qilong","doi":"10.1109/IVNC.2004.1354915","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354915","url":null,"abstract":"In this paper, some optimum field emission displays (FEDs) elements are proposed using numerical analyses to improve the emission performances, to decrease the driving voltage and to improve other driving performances of these devices with different structures like diode structure, normal-gate structure, and under-gate structure.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133355108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354911
S. Tseng, S. Tsai, B. Yao, Y.K. Lee, K. Leou, C. Tsai
Carbon nanotubes (CNTs) have been considered as a prime candidate material of cold cathode emitter for field emission (FE) application. No matter whether the cathode assembly is fabricated by screen printing or in-situ chemical vapor deposition (CVD), the strict requirement of high emission uniformity on a large area display panel still remains a great challenge. There have been a large amount of publications demonstrating the ability of growing large area patterned well-aligned multi-walled carbon nanotubes with uniform diameter and height by thermal CVD. The field emission performance however was hampered due to high carbon nanotube density (> 10/sup 8/ cm/sup -2/) and low emission density (/spl sim/10/sup 4/ cm/sup -2/), which is not attributed solely to the electrical field screening effect. In this report, we used electron beam lithography (EBL) followed by metal deposition/lift-off to define the position and size of nickel catalyst and grew CNTs using inductively-coupled plasma (ICP) CVD. The EBL has been proven to be a straight forward method to define an array of catalyst metal dots with designated size and inter-distance. The ICP-CVD has been shown to grow free-standing vertically-aligned CNTs with uniform diameter and height. And then a gripper-type nano-object manipulation assembly inside a scanning electron microscope (SEM) was utilized to measure the field emission from individual carbon nanotube.
{"title":"Field emission-from arrays of free-standing carbon nanotubes grown by ICP-CVD","authors":"S. Tseng, S. Tsai, B. Yao, Y.K. Lee, K. Leou, C. Tsai","doi":"10.1109/IVNC.2004.1354911","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354911","url":null,"abstract":"Carbon nanotubes (CNTs) have been considered as a prime candidate material of cold cathode emitter for field emission (FE) application. No matter whether the cathode assembly is fabricated by screen printing or in-situ chemical vapor deposition (CVD), the strict requirement of high emission uniformity on a large area display panel still remains a great challenge. There have been a large amount of publications demonstrating the ability of growing large area patterned well-aligned multi-walled carbon nanotubes with uniform diameter and height by thermal CVD. The field emission performance however was hampered due to high carbon nanotube density (> 10/sup 8/ cm/sup -2/) and low emission density (/spl sim/10/sup 4/ cm/sup -2/), which is not attributed solely to the electrical field screening effect. In this report, we used electron beam lithography (EBL) followed by metal deposition/lift-off to define the position and size of nickel catalyst and grew CNTs using inductively-coupled plasma (ICP) CVD. The EBL has been proven to be a straight forward method to define an array of catalyst metal dots with designated size and inter-distance. The ICP-CVD has been shown to grow free-standing vertically-aligned CNTs with uniform diameter and height. And then a gripper-type nano-object manipulation assembly inside a scanning electron microscope (SEM) was utilized to measure the field emission from individual carbon nanotube.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133520640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354951
Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu
Large-area and well-aligned Cu/sub 2/S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu/sub 2/S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.
{"title":"Preparation of aligned Cu/sub 2/S nanowire arrays and their field emission properties","authors":"Q.B. Wu, S. Ren, S. Deng, Jun Chen, N. Xu","doi":"10.1109/IVNC.2004.1354951","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354951","url":null,"abstract":"Large-area and well-aligned Cu/sub 2/S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu/sub 2/S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128686058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354971
L. Chen, A. Akinwande
In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.
{"title":"Double-gated silicon field emission arrays: fabrication and characterization","authors":"L. Chen, A. Akinwande","doi":"10.1109/IVNC.2004.1354971","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354971","url":null,"abstract":"In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132878173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354907
K. Rangaswamy, M. Cahay, K. Jensen
A quantum-mechanical wave impedance approach is used to calculate the shot noise power spectrum of the emission current from planar metallic cathodes starting with the Landauer-Buttiker formalism. The formalism takes into account the effects of the image force potential in front of the cathode. For metals with low work-function, the Fano factor which characterizes the reduction of the shot noise power below the Schottky result is calculated as a function of the applied external electric field. Simple analytical expressions for the Fano factor are derived for the cathode operated in the thermionic (Richardson) and tunneling regimes (Fowler-Nordheim approximation). The value of the Fano factor is found to be reduced substantially below the value calculated when the effects of the image charge potential are neglected. The approach can be readily extended to include space-charge effects in the vacuum gap.
{"title":"Influence of image force potential on the shot noise properties of field emitters","authors":"K. Rangaswamy, M. Cahay, K. Jensen","doi":"10.1109/IVNC.2004.1354907","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354907","url":null,"abstract":"A quantum-mechanical wave impedance approach is used to calculate the shot noise power spectrum of the emission current from planar metallic cathodes starting with the Landauer-Buttiker formalism. The formalism takes into account the effects of the image force potential in front of the cathode. For metals with low work-function, the Fano factor which characterizes the reduction of the shot noise power below the Schottky result is calculated as a function of the applied external electric field. Simple analytical expressions for the Fano factor are derived for the cathode operated in the thermionic (Richardson) and tunneling regimes (Fowler-Nordheim approximation). The value of the Fano factor is found to be reduced substantially below the value calculated when the effects of the image charge potential are neglected. The approach can be readily extended to include space-charge effects in the vacuum gap.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125712277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon nanotubes were fabricated close together so that their separation is smaller than their height and field enhancement effects at the apexes of the tubes are diminished due to electrostatic shielding. Bundling was achieved by embedding the tubes into a PCVD silicon dioxide, followed by HF etching, water rinsing, and nitrogen drying. Emission measurements were performed in a vacuum system at a pressure of 4 /spl times/ 10/sup -9/ Torr. Current-voltage characteristics were obtained at room temperature, 120 /spl deg/C and 170 /spl deg/C. Macroscopic current densities of /sup 2/0 mA/cm/sup 2/ were obtained with a 0.5 mm diameter tungsten anode. The turn-on fields are about 15 V//spl mu/m.
{"title":"Field emission from teepee-shaped carbon nanotube bundles","authors":"H. Busta, Z. Toit, J. Montgomery, A. Feinerman","doi":"10.1116/1.1885009","DOIUrl":"https://doi.org/10.1116/1.1885009","url":null,"abstract":"Carbon nanotubes were fabricated close together so that their separation is smaller than their height and field enhancement effects at the apexes of the tubes are diminished due to electrostatic shielding. Bundling was achieved by embedding the tubes into a PCVD silicon dioxide, followed by HF etching, water rinsing, and nitrogen drying. Emission measurements were performed in a vacuum system at a pressure of 4 /spl times/ 10/sup -9/ Torr. Current-voltage characteristics were obtained at room temperature, 120 /spl deg/C and 170 /spl deg/C. Macroscopic current densities of /sup 2/0 mA/cm/sup 2/ were obtained with a 0.5 mm diameter tungsten anode. The turn-on fields are about 15 V//spl mu/m.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126296145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354890
Jae-Hee Han, S. Lee, A. Berdinsky, J. Yoo, Chong-Yun Park, J. J. Choi, T. Jung, I. Han, J. M. Kim
We have directly grown CNTs on the metal substrates by direct-current plasma-enhanced chemical-vapor deposition (DC-PECVD) using a gas mixture of C/sub 2/H/sub 2/ and NH/sub 3/ at relatively low temperature (550 /spl deg/C). In this study, we report field emission properties of CNTs depending on pattern sizes and spacings. Field-emission characteristic of CNTs was evaluated in a vacuum of 10/sup -6/ Torr in a parallel diode configuration. It is found that there is a correlation between pattern morphologies (such as window area, spacing, and dimension of window edge, etc.) and the field-emission properties. Furthermore, we found that the contact resistance between CNTs and substrate is a crucial factor for the saturation of field emission from CNTs.
{"title":"Field emission properties of selectively grown carbon nanotubes for electron emitters in microwave power amplifier","authors":"Jae-Hee Han, S. Lee, A. Berdinsky, J. Yoo, Chong-Yun Park, J. J. Choi, T. Jung, I. Han, J. M. Kim","doi":"10.1109/IVNC.2004.1354890","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354890","url":null,"abstract":"We have directly grown CNTs on the metal substrates by direct-current plasma-enhanced chemical-vapor deposition (DC-PECVD) using a gas mixture of C/sub 2/H/sub 2/ and NH/sub 3/ at relatively low temperature (550 /spl deg/C). In this study, we report field emission properties of CNTs depending on pattern sizes and spacings. Field-emission characteristic of CNTs was evaluated in a vacuum of 10/sup -6/ Torr in a parallel diode configuration. It is found that there is a correlation between pattern morphologies (such as window area, spacing, and dimension of window edge, etc.) and the field-emission properties. Furthermore, we found that the contact resistance between CNTs and substrate is a crucial factor for the saturation of field emission from CNTs.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127658501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354962
M. Chung, T. S. Choi, P. H. Cutler, N. Miskovsky
Numerical calculations of the field enhancement were carried out for a finite geometry of triple junction which consists of a half space of metal, a quarter space of dielectric and a quarter space of vacuum. The electric field F was analytically obtained as a function of geometry and dielectric constant. It was found that the enhancement factor is approximately 50 and 20 in the vacuum and the dielectric regions, respectively. It was also found that the metallic size and dielectric constant only determines the field intensity but not the enhancement of the field. Taking into account the space charge effect produced by strong field, the enhancement of field emission becomes larger.
{"title":"Calculations of enhanced field electron emission at the triple junction","authors":"M. Chung, T. S. Choi, P. H. Cutler, N. Miskovsky","doi":"10.1109/IVNC.2004.1354962","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354962","url":null,"abstract":"Numerical calculations of the field enhancement were carried out for a finite geometry of triple junction which consists of a half space of metal, a quarter space of dielectric and a quarter space of vacuum. The electric field F was analytically obtained as a function of geometry and dielectric constant. It was found that the enhancement factor is approximately 50 and 20 in the vacuum and the dielectric regions, respectively. It was also found that the metallic size and dielectric constant only determines the field intensity but not the enhancement of the field. Taking into account the space charge effect produced by strong field, the enhancement of field emission becomes larger.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"115 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124564172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ring-shaped images may appear under high field emission conditions for very thin carbon nanotubes (CNTs). Such image patterns cannot be explained by the corresponding field enhancement only. A model for electron field emission from the CNT is developed. The model refers to a capped nanotube (with cylindrical body and hemispherical cap). It is assumed that for high emission currents/high local temperatures, part of the electrons behave as quasi-free. As a result, the spatial confinement quantization of their states appears. The Schrodinger equation for the single electron can be solved separately on the cylindrical and spherical parts of the structure and the corresponding solutions can be connected smoothly at the circular intersection of the two regions. Many electronic states that are possible on the two regions separately turn out to be forbidden for the capped nanotube. The selection of the possible electronic states under the aforementioned complex conditions is determined by the geometric parameters of the tube, namely the ratio between its length and diameter. The occupation of the allowed one- electron states is considered as governed by the usual Fermi statistics. Together with the quantum probability of finding an electron in some specified area of the surface, this gives the electron distribution on the tube, which is one of the key factors determining the electron field emission from the CNT. Another key factor is the applied extraction field. The extraction field has been numerically computed using Simion nanotube-on-post diode configuration.
{"title":"Ring-shaped images as a result of non-uniform field emission from capped carbon nanotubes","authors":"L. Filip, D. Nicolaescu, S. Kanemaru, J. Itoh","doi":"10.1116/1.1864059","DOIUrl":"https://doi.org/10.1116/1.1864059","url":null,"abstract":"Ring-shaped images may appear under high field emission conditions for very thin carbon nanotubes (CNTs). Such image patterns cannot be explained by the corresponding field enhancement only. A model for electron field emission from the CNT is developed. The model refers to a capped nanotube (with cylindrical body and hemispherical cap). It is assumed that for high emission currents/high local temperatures, part of the electrons behave as quasi-free. As a result, the spatial confinement quantization of their states appears. The Schrodinger equation for the single electron can be solved separately on the cylindrical and spherical parts of the structure and the corresponding solutions can be connected smoothly at the circular intersection of the two regions. Many electronic states that are possible on the two regions separately turn out to be forbidden for the capped nanotube. The selection of the possible electronic states under the aforementioned complex conditions is determined by the geometric parameters of the tube, namely the ratio between its length and diameter. The occupation of the allowed one- electron states is considered as governed by the usual Fermi statistics. Together with the quantum probability of finding an electron in some specified area of the surface, this gives the electron distribution on the tube, which is one of the key factors determining the electron field emission from the CNT. Another key factor is the applied extraction field. The extraction field has been numerically computed using Simion nanotube-on-post diode configuration.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121074270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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