Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354921
A. Baba, T. Yoshida, T. Asano
In this paper, the ultra-high efficiency (38%) field electron emission was demonstrated from the defect-control polyimide tunnel cathode using the dc-voltage forming method. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition are important to obtain ultra-high electron emission efficiency from the cathode.
{"title":"Ultra-high electron emission efficiency from defect controlled polyimide tunnel cathode","authors":"A. Baba, T. Yoshida, T. Asano","doi":"10.1109/IVNC.2004.1354921","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354921","url":null,"abstract":"In this paper, the ultra-high efficiency (38%) field electron emission was demonstrated from the defect-control polyimide tunnel cathode using the dc-voltage forming method. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition are important to obtain ultra-high electron emission efficiency from the cathode.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122686014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354943
J. Sellmair, K. Edinger, H. Koops
A planar micro-triode with field emission cathode is investigated. The metal pattern for coarse and fine voltage feed lines, signal detection lines, and shielding patterns are designed by Computer Aided Design (CAD) and fabricated in 1 /spl mu/m technology. Electron optical performance and field distribution is calculated using numerical electron optics programs for structures in 1 /spl mu/m technology and 0.3 /spl mu/m technology. A silicon chip coated with thick silicon oxide is used as substrate material. The coarse metal pattern is fabricated using an optical contact printer and etching. The fine metal pattern is produced using electron beam lithography exposure and metal lift-off. Finer connecting lines and the field emitter tip as well as extractor structures are fabricated by direct write nanolithography with electron beam induced deposition (EBID). For deposition, a platinum containing precursor is used. Deposition is performed in an experimental mask repair system at very low energies and high placement precision. For prolonged lifetime an ion mirror is incorporated. Emission is observed using a scintillator-anode. Investigations are performed in an UHV system, as well as in high vacuum and in air. Measurements of currents from deposited emitters are performed in a triode arrangement using 3kV anode voltage, grounded extractors and -105 V as cathode potential. The emission current is recorded using a computer controlled recording system with msec resolution to monitor short term variations also in long term measurements. Emission currents of nA are observed without ion mirror in action over several days, and show variations up to 50% due to vacuum conditions.
{"title":"Investigation of a planar microtriode fabricated with direct write nanolithography using electron beam induced deposition","authors":"J. Sellmair, K. Edinger, H. Koops","doi":"10.1109/IVNC.2004.1354943","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354943","url":null,"abstract":"A planar micro-triode with field emission cathode is investigated. The metal pattern for coarse and fine voltage feed lines, signal detection lines, and shielding patterns are designed by Computer Aided Design (CAD) and fabricated in 1 /spl mu/m technology. Electron optical performance and field distribution is calculated using numerical electron optics programs for structures in 1 /spl mu/m technology and 0.3 /spl mu/m technology. A silicon chip coated with thick silicon oxide is used as substrate material. The coarse metal pattern is fabricated using an optical contact printer and etching. The fine metal pattern is produced using electron beam lithography exposure and metal lift-off. Finer connecting lines and the field emitter tip as well as extractor structures are fabricated by direct write nanolithography with electron beam induced deposition (EBID). For deposition, a platinum containing precursor is used. Deposition is performed in an experimental mask repair system at very low energies and high placement precision. For prolonged lifetime an ion mirror is incorporated. Emission is observed using a scintillator-anode. Investigations are performed in an UHV system, as well as in high vacuum and in air. Measurements of currents from deposited emitters are performed in a triode arrangement using 3kV anode voltage, grounded extractors and -105 V as cathode potential. The emission current is recorded using a computer controlled recording system with msec resolution to monitor short term variations also in long term measurements. Emission currents of nA are observed without ion mirror in action over several days, and show variations up to 50% due to vacuum conditions.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"292 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122541353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355008
M. Cahay, K. Garre, P. Draviam, P. Boolchand, S. Fairchild, J. Jones, X. Wu, D. Poitras, D. J. Lockwood, V. Semet, V. Binh
The growth, characterization, and field emission properties of pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates were studied. X-ray diffraction analysis of fairly thick films (micrometer size) reveals the successful growth of the cubic rocksalt structure with a lattice constant of 5.863(7) angstroms, which is close to the bulk value. High resolution transmission electron microscope images of the films reveal that they are comprised of nanocrystals separated by regions of amorphous materials. Raman spectra and ellipsometry measurements were also performed. It was found that the work function deduced from Fowler-Nordheim plots at room temperature has a mean value of 0.65 eV. Also, a strong dependence of the field emission current with temperature was observed.
{"title":"Pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates: growth, characterization, and field emission properties","authors":"M. Cahay, K. Garre, P. Draviam, P. Boolchand, S. Fairchild, J. Jones, X. Wu, D. Poitras, D. J. Lockwood, V. Semet, V. Binh","doi":"10.1109/IVNC.2004.1355008","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355008","url":null,"abstract":"The growth, characterization, and field emission properties of pulsed laser deposition of lanthanum sulfide thin films on silicon and indium phosphide substrates were studied. X-ray diffraction analysis of fairly thick films (micrometer size) reveals the successful growth of the cubic rocksalt structure with a lattice constant of 5.863(7) angstroms, which is close to the bulk value. High resolution transmission electron microscope images of the films reveal that they are comprised of nanocrystals separated by regions of amorphous materials. Raman spectra and ellipsometry measurements were also performed. It was found that the work function deduced from Fowler-Nordheim plots at room temperature has a mean value of 0.65 eV. Also, a strong dependence of the field emission current with temperature was observed.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131302387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354961
Z. Insepov, J. Norem, A. Hassanein
The mechanism of "cold-emission" caused by high electric field gradients typical of future linacs is studied. The mechanism was studied by molecular dynamics (MD) simulation of a nanoscale copper tip on a surface of an rf-cavity electrode that is capable of revealing temperature effects. In this MD method, the equations of motion of interacting particles are solved numerically and appropriate initial and boundary conditions are applied. According to the results, the vacuum inside the high-gradient rf cavity should contain a noticeable presence of nanometer-size chunks that evaporated from various intrusions that exist on the real cavity surface by an rf field. A critical electrical evaporation field was obtained for temperatures that range from room up to the melting point of bulk Cu. The simulation results were compared with available data on FIM tip fracture in a dc electric field.
{"title":"New mechanism of cluster field evaporation in rf breakdown","authors":"Z. Insepov, J. Norem, A. Hassanein","doi":"10.1109/IVNC.2004.1354961","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354961","url":null,"abstract":"The mechanism of \"cold-emission\" caused by high electric field gradients typical of future linacs is studied. The mechanism was studied by molecular dynamics (MD) simulation of a nanoscale copper tip on a surface of an rf-cavity electrode that is capable of revealing temperature effects. In this MD method, the equations of motion of interacting particles are solved numerically and appropriate initial and boundary conditions are applied. According to the results, the vacuum inside the high-gradient rf cavity should contain a noticeable presence of nanometer-size chunks that evaporated from various intrusions that exist on the real cavity surface by an rf field. A critical electrical evaporation field was obtained for temperatures that range from room up to the melting point of bulk Cu. The simulation results were compared with available data on FIM tip fracture in a dc electric field.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114209111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354903
A. Mayer
We present simulations of electronic transport in single-wall and multi-wall carbon nanotubes, which are placed between two metallic contacts. The carbon atoms are represented by a local pseudopotential, and a transfer-matrix technique is used to solve the Schrodinger equation. Results show that electrons continuously propagate in the shell in which they are initially injected, with transfers to other tubes hardly exceeding one percent of the whole current even when micron-long distances are considered. The conductance and repartition of the current are traced to the band structure of the nanotube. These simulations thus show that provided one can prepare the electrons to enter a given shell of multi-wall nanotubes, it may be possible to use them as independent conduction channels.
{"title":"Simulations of electronic transport in single-wall and multi-wall carbon nanotubes","authors":"A. Mayer","doi":"10.1109/IVNC.2004.1354903","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354903","url":null,"abstract":"We present simulations of electronic transport in single-wall and multi-wall carbon nanotubes, which are placed between two metallic contacts. The carbon atoms are represented by a local pseudopotential, and a transfer-matrix technique is used to solve the Schrodinger equation. Results show that electrons continuously propagate in the shell in which they are initially injected, with transfers to other tubes hardly exceeding one percent of the whole current even when micron-long distances are considered. The conductance and repartition of the current are traced to the band structure of the nanotube. These simulations thus show that provided one can prepare the electrons to enter a given shell of multi-wall nanotubes, it may be possible to use them as independent conduction channels.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114597211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354937
H. Nakane, S. Satoh, H. Adachi
The work function of the Mo(100) surface has a relatively high value of 4.3 eV, it can be reduced to 2.1 eV by heating with slight layer of zirconium oxide. The field emission electrons are dominantly extracted from a (100) surface of a molybdenum sharp needle emitter.
{"title":"Reduction of the work function on Mo(100) surface covered with ZrO/sub 2/","authors":"H. Nakane, S. Satoh, H. Adachi","doi":"10.1109/IVNC.2004.1354937","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354937","url":null,"abstract":"The work function of the Mo(100) surface has a relatively high value of 4.3 eV, it can be reduced to 2.1 eV by heating with slight layer of zirconium oxide. The field emission electrons are dominantly extracted from a (100) surface of a molybdenum sharp needle emitter.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114797618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354946
Y. Shin, S.T. Han, S. Jeon, K. Jang, J. So, G. Park
We propose a novel oscillator, so called "Counter-Streaming Multi-Beam Oscillator (CSMBO)," using the interaction between two electron beams reversely traveling for high frequency application, particularly millimeter/sub-millimeter region. The basic idea of the device is that the electron beams traveling in the opposite direction can mutually interact with one another through coupled-cavity. The coupled-cavities in the oscillator are playing a role in not only giving rise to inherent feedback network but also combining the output power generated from the electron beams. Based on the new feedback mechanism, modified counter-streaming beam oscillators using multi-cavity or multi-beam to minimize the start-oscillation current and to enlarge the electronic efficiency are also challenged for terahertz application.
{"title":"Development of counter-streaming multi-beam oscillator based on cold cathode","authors":"Y. Shin, S.T. Han, S. Jeon, K. Jang, J. So, G. Park","doi":"10.1109/IVNC.2004.1354946","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354946","url":null,"abstract":"We propose a novel oscillator, so called \"Counter-Streaming Multi-Beam Oscillator (CSMBO),\" using the interaction between two electron beams reversely traveling for high frequency application, particularly millimeter/sub-millimeter region. The basic idea of the device is that the electron beams traveling in the opposite direction can mutually interact with one another through coupled-cavity. The coupled-cavities in the oscillator are playing a role in not only giving rise to inherent feedback network but also combining the output power generated from the electron beams. Based on the new feedback mechanism, modified counter-streaming beam oscillators using multi-cavity or multi-beam to minimize the start-oscillation current and to enlarge the electronic efficiency are also challenged for terahertz application.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114881311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354942
T. Sato, M. Saida, K. Horikawa, M. Nagao, S. Kanemaru, T. Matsukawa, J. Itoh, S. Yamamoto, M. Sasaki
We examine microscopic behaviors of work function and topography with scanning tunneling microscopy (STM). Hafnium carbide thin films were deposited on an n-type Si flat substrate by inductively coupled plasma (ICP) assisted magnetron sputtering at the argon pressure of 0.1 Pa. The surface of the films was cleaned by in-situ argon ion sputtering before STM observations. The ion current, duration and acceleration voltage were set at 3.0 /spl mu/A, 10 min, and 0.5 keV or 1.0 keV, respectively. The microscopic work function distribution was evaluated from the local tunneling barrier height (LBH) obtained with an STM apparatus. We adopted the tip-modulation method to evaluate LBH where we can obtain topograph and LBH images simultaneously. We also measured the macroscopic work function of these sample surfaces by a Kelvin probe. The work function of the 1.0 keV sputtered surface is 0.4 eV higher than that of the 0.5 keV sputtered surface.
{"title":"STM observations of hafnium carbide thin films as a field emission material","authors":"T. Sato, M. Saida, K. Horikawa, M. Nagao, S. Kanemaru, T. Matsukawa, J. Itoh, S. Yamamoto, M. Sasaki","doi":"10.1109/IVNC.2004.1354942","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354942","url":null,"abstract":"We examine microscopic behaviors of work function and topography with scanning tunneling microscopy (STM). Hafnium carbide thin films were deposited on an n-type Si flat substrate by inductively coupled plasma (ICP) assisted magnetron sputtering at the argon pressure of 0.1 Pa. The surface of the films was cleaned by in-situ argon ion sputtering before STM observations. The ion current, duration and acceleration voltage were set at 3.0 /spl mu/A, 10 min, and 0.5 keV or 1.0 keV, respectively. The microscopic work function distribution was evaluated from the local tunneling barrier height (LBH) obtained with an STM apparatus. We adopted the tip-modulation method to evaluate LBH where we can obtain topograph and LBH images simultaneously. We also measured the macroscopic work function of these sample surfaces by a Kelvin probe. The work function of the 1.0 keV sputtered surface is 0.4 eV higher than that of the 0.5 keV sputtered surface.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121495377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
High density carbon nanotube field emitter arrays (CNT-FEA) in both triode and diode structures on Si were fabricated. The carbon nanotubes were synthesized using a microwave-heated CVD process. The emission image of a diode-type CNT-FEA demonstrated a brightness of /spl sim/1800 cd/m/sup 2/ and a homogeneous emission quality. The cross-sectional SEM image of a triode-type emitter showed that CNTs in triode structures were shorter and less dense than CNTs in the diode-type emitters, though almost identical growth conditions of CNTs were utilized. The rough surface morphology of the emitter zone indicated the formation of chromium-silicide that could enhance the conductivity of Si substrates. Emission characteristics of the triode CNT-FEA showed that with a 1-/spl mu/m SiO/sub 2/ as the spacer, very low operating voltage could be applied to the gate. Therefore, high density CNT field emitter arrays with low turn-on voltage and large emission current were successfully fabricated.
在硅基上制备了三极管和二极管结构的高密度碳纳米管场发射极阵列(CNT-FEA)。采用微波加热CVD工艺合成了碳纳米管。二极管型碳纳米管有限元分析的发射图像显示亮度为/spl sim/1800 cd/m/sup /，发射质量均匀。三极管型发射极的SEM横截面图显示，尽管采用了几乎相同的生长条件，但三极管结构中的碳纳米管比二极管型发射极中的碳纳米管更短，密度更低。发射极区的粗糙表面形貌表明硅化铬的形成可以增强硅衬底的导电性。三极管的发射特性表明，以1-/spl μ m SiO/sub - 2/作为间隔片，栅极可以施加极低的工作电压。因此，成功地制备了具有低导通电压和大发射电流的高密度碳纳米管场发射极阵列。
{"title":"Fabrication and field emission characteristics of high density carbon nanotubes microarrays","authors":"C. Chuang, J.H. Huang, C. Lee, Y. Chang","doi":"10.1116/1.1880132","DOIUrl":"https://doi.org/10.1116/1.1880132","url":null,"abstract":"High density carbon nanotube field emitter arrays (CNT-FEA) in both triode and diode structures on Si were fabricated. The carbon nanotubes were synthesized using a microwave-heated CVD process. The emission image of a diode-type CNT-FEA demonstrated a brightness of /spl sim/1800 cd/m/sup 2/ and a homogeneous emission quality. The cross-sectional SEM image of a triode-type emitter showed that CNTs in triode structures were shorter and less dense than CNTs in the diode-type emitters, though almost identical growth conditions of CNTs were utilized. The rough surface morphology of the emitter zone indicated the formation of chromium-silicide that could enhance the conductivity of Si substrates. Emission characteristics of the triode CNT-FEA showed that with a 1-/spl mu/m SiO/sub 2/ as the spacer, very low operating voltage could be applied to the gate. Therefore, high density CNT field emitter arrays with low turn-on voltage and large emission current were successfully fabricated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122148745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355001
C. Weng, Y.Y. Lin, C. Tung, H. Wei, K. Leou, C. Tsai
Here we investigate in situ post-treatment of carbon nanofibers in inductively coupled plasma system for field emission improvements. The nanofibers were characterized using SEM, TEM, energy dispersive spectroscopy, micro-Raman spectroscopy and various FE measurements including typical emission current density-electric field (J-E) curves, large-area uniformity of luminance, and long-time stability of emission currents. Certain structural transformations were observed and significantly enhanced FE was achieved. The mechanism of the structural transformations and the corresponding FE enhancement were also investigated.
{"title":"In-situ post-treatment for field emission improvement of carbon nanofibers in inductively coupled plasma system","authors":"C. Weng, Y.Y. Lin, C. Tung, H. Wei, K. Leou, C. Tsai","doi":"10.1109/IVNC.2004.1355001","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355001","url":null,"abstract":"Here we investigate in situ post-treatment of carbon nanofibers in inductively coupled plasma system for field emission improvements. The nanofibers were characterized using SEM, TEM, energy dispersive spectroscopy, micro-Raman spectroscopy and various FE measurements including typical emission current density-electric field (J-E) curves, large-area uniformity of luminance, and long-time stability of emission currents. Certain structural transformations were observed and significantly enhanced FE was achieved. The mechanism of the structural transformations and the corresponding FE enhancement were also investigated.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124829768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：