Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1355000
A. Obraztsov, A. Zolotukhin, A. Volkov, V.V. Rodaatis, A. Chakhovskoi
In this report, results of the experiments devoted to developing of the method for controllable growth of CNT aligned in different directions were presented. For this purpose the usual setup for CVD was modified to provide shielding of the substrate from electric field existing between the cathode and the anode when the high voltage is applied to activate dc discharge. A mesh mask is used as the electrostatic shield. Similar to the standard CVD process, generation of C/sub 2/ species occurs in the plasma, and then these species are deposited on the substrate surface via the holes in the mask. With appropriate conditions, CNT growth was obtained on various substrates (Ni plate, quartz substrate patterned with Ni thin film stripes). An application of bias voltage between the Ni stripes allows for the partial alignment of CNT along the direction of the electric field between the stripes. This result confirms a possibility to achieve controllable growth of the CNTs.
{"title":"Electric field induced alignment of carbon nanotubes grown by CVD","authors":"A. Obraztsov, A. Zolotukhin, A. Volkov, V.V. Rodaatis, A. Chakhovskoi","doi":"10.1109/IVNC.2004.1355000","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1355000","url":null,"abstract":"In this report, results of the experiments devoted to developing of the method for controllable growth of CNT aligned in different directions were presented. For this purpose the usual setup for CVD was modified to provide shielding of the substrate from electric field existing between the cathode and the anode when the high voltage is applied to activate dc discharge. A mesh mask is used as the electrostatic shield. Similar to the standard CVD process, generation of C/sub 2/ species occurs in the plasma, and then these species are deposited on the substrate surface via the holes in the mask. With appropriate conditions, CNT growth was obtained on various substrates (Ni plate, quartz substrate patterned with Ni thin film stripes). An application of bias voltage between the Ni stripes allows for the partial alignment of CNT along the direction of the electric field between the stripes. This result confirms a possibility to achieve controllable growth of the CNTs.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122404708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354912
Pi Jun, H. Uh, Byungkwan Kwak, Hyung Wook Noh, S. Park, Sungwook Ko, E. Cho, J. Lee
A new structure of triode-type carbon nanotube-field emitter arrays (CNT-FEAs) is proposed whose extraction gate is surrounded by CNT emitters. 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEA was carried out using the finite element method and the results were compare with those of conventional CNT-FEAs.
{"title":"Numerical analysis of carbon nanotube field emitter arrays with embedded electron beam focusing structure","authors":"Pi Jun, H. Uh, Byungkwan Kwak, Hyung Wook Noh, S. Park, Sungwook Ko, E. Cho, J. Lee","doi":"10.1109/IVNC.2004.1354912","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354912","url":null,"abstract":"A new structure of triode-type carbon nanotube-field emitter arrays (CNT-FEAs) is proposed whose extraction gate is surrounded by CNT emitters. 3-dimensional numerical calculations of electrostatic potential for the proposed CNT-FEA was carried out using the finite element method and the results were compare with those of conventional CNT-FEAs.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129877486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354950
H. Wong, V. Filip, P. Chu
Silicon was not used for light emitting devices (LEDs) as it is an indirect bandgap material and has very low radiative recombination rate and short photon lifetime. This fundamental material property limitation has been overcome. Recent efforts have demonstrated that the light emitting efficiency can be enhanced greatly and lasing effect is also possible with the low-dimensional (LD) silicon materials. In this work, a novel light- emitting device structure based on Si/SiO/sub 2//LD Si/Si/sub 3/N/sub 4//Si system is proposed. The low-dimensional Si governed the photon generation efficiency and energy spectrum whereas the asymmetry barrier heights formed by the SiO/sub 2/ and Si/sub 3/N/sub 4/ provide high efficiency carrier injection based on direct tunneling and maximizes the recombination events taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunneling carrier injection at the Si/SiO/sub 2/ interface and band-to-band recombination of in the LD Si, were conducted.
{"title":"A novel light emitting device based on Si nanostructures and tunneling injection of carriers","authors":"H. Wong, V. Filip, P. Chu","doi":"10.1109/IVNC.2004.1354950","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354950","url":null,"abstract":"Silicon was not used for light emitting devices (LEDs) as it is an indirect bandgap material and has very low radiative recombination rate and short photon lifetime. This fundamental material property limitation has been overcome. Recent efforts have demonstrated that the light emitting efficiency can be enhanced greatly and lasing effect is also possible with the low-dimensional (LD) silicon materials. In this work, a novel light- emitting device structure based on Si/SiO/sub 2//LD Si/Si/sub 3/N/sub 4//Si system is proposed. The low-dimensional Si governed the photon generation efficiency and energy spectrum whereas the asymmetry barrier heights formed by the SiO/sub 2/ and Si/sub 3/N/sub 4/ provide high efficiency carrier injection based on direct tunneling and maximizes the recombination events taking place in the LD Si region. Quantum calculations on the charge transports, including the direct tunneling carrier injection at the Si/SiO/sub 2/ interface and band-to-band recombination of in the LD Si, were conducted.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130046990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, J. Nam, J. Park, C.G. Lee, D. Choi, Byeong Kyoo Shon, H. Chung, S. Kwon
Photosensitive carbon nanotube (CNT) paste was synthesized with spin on glass (SOG) as inorganic binder. The field emission characteristics of this CNT paste was studied. CNT field emitter arrays (FEAs) was then fabricated using screen-printing method, photolithography and vacuum-in-line sealing technology. It is concluded that the diode type FEA using CNT paste with SOG can be used for lighting system applications such as the back light unit in TFT-LCD.
{"title":"Screen printed carbon nanotube field emitter array for lighting source application","authors":"Jae-Hong Park, J. Moon, Jae-Hee Han, A. Berdinsky, J. Yoo, J. Nam, J. Park, C.G. Lee, D. Choi, Byeong Kyoo Shon, H. Chung, S. Kwon","doi":"10.1116/1.1851535","DOIUrl":"https://doi.org/10.1116/1.1851535","url":null,"abstract":"Photosensitive carbon nanotube (CNT) paste was synthesized with spin on glass (SOG) as inorganic binder. The field emission characteristics of this CNT paste was studied. CNT field emitter arrays (FEAs) was then fabricated using screen-printing method, photolithography and vacuum-in-line sealing technology. It is concluded that the diode type FEA using CNT paste with SOG can be used for lighting system applications such as the back light unit in TFT-LCD.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126325577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354967
D. Lysenkov, G. Muller, J. Engstler, J. J. Schneider
Carbon nanotubes are synthesized by CVD using source precursors of metallocene related structures both on commercial and home made electrochemically etched porous alumina membranes of different thickness (60-200 /spl mu/m) and pore diameter (50-200 nm). AFM, SEM, EDX and TEM investigations showed that the tubular structures formed within the pores of the alumina membranes are composed of pyrolytic carbon in which nanoscaled metallic particles are incorporated. Long-term processing effects in the pressure range resulted in both irreversible degradation and reversible activation of some emitters.
{"title":"Pressure dependence and current stability of field emission from carbon nanotubes on porous alumina","authors":"D. Lysenkov, G. Muller, J. Engstler, J. J. Schneider","doi":"10.1109/IVNC.2004.1354967","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354967","url":null,"abstract":"Carbon nanotubes are synthesized by CVD using source precursors of metallocene related structures both on commercial and home made electrochemically etched porous alumina membranes of different thickness (60-200 /spl mu/m) and pore diameter (50-200 nm). AFM, SEM, EDX and TEM investigations showed that the tubular structures formed within the pores of the alumina membranes are composed of pyrolytic carbon in which nanoscaled metallic particles are incorporated. Long-term processing effects in the pressure range resulted in both irreversible degradation and reversible activation of some emitters.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127239117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354931
Sora Lee, D. Jeon
New component of CNT paste is explored to develop a carbon nanotube field emitter backlight unit (CNT-FE BLU) by screen printing method. To reduce the remnant of organic binder materials on the surface of SWCNT, P(MMA-co-BMA) random block copolymer as the new binder materials is developed. The weight of the remnant materials after burning process at 350/spl deg/C was measured by TGA. The measured field emission property demonstrated that the developed P(MMA-co-BMA) was effective to reduce the remnant on surface of CNT, which is critically important for improving the field emission property of CNT-FE BLU fabricated by screen printing method.
探索了碳纳米管浆料的新组分，采用丝网印刷方法制备了碳纳米管场发射体背光单元(CNT- fe BLU)。为了减少有机粘结材料在swcnts表面的残留，开发了P(MMA-co-BMA)无规嵌段共聚物作为新型粘结材料。用热重分析仪测定了在350/spl℃下燃烧后残余材料的重量。场发射性能测试表明，所制备的P(MMA-co-BMA)能有效减少碳纳米管表面的残留物，这对提高网印法制备的碳纳米管- fe BLU的场发射性能至关重要。
{"title":"Low temperature burnable CNT paste component for CNT-field emitter backlight unit","authors":"Sora Lee, D. Jeon","doi":"10.1109/IVNC.2004.1354931","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354931","url":null,"abstract":"New component of CNT paste is explored to develop a carbon nanotube field emitter backlight unit (CNT-FE BLU) by screen printing method. To reduce the remnant of organic binder materials on the surface of SWCNT, P(MMA-co-BMA) random block copolymer as the new binder materials is developed. The weight of the remnant materials after burning process at 350/spl deg/C was measured by TGA. The measured field emission property demonstrated that the developed P(MMA-co-BMA) was effective to reduce the remnant on surface of CNT, which is critically important for improving the field emission property of CNT-FE BLU fabricated by screen printing method.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122986161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354981
D. Hsu, J. Shaw
Multiwalled carbon nanotubes (cNTs) in both the gated cNT-on-Si post and the cNT-in-open configurations were used in this study. Large increases in field emission current were observed when operating cNTs in substantial pressures of hydrogen, especially after the nanotubes have been contaminated with oxygen. Emission degradation was likely due to surface contamination with oxygen and was removed by reaction with hydrogen (atoms). Exposure of the emitters to molecular hydrogen or oxygen when the arrays are not emitting has no effect on the emission produced once the gases are removed, suggesting that the nanotubes are inert to the molecular forms of hydrogen and oxygen and that the atomic forms, which are created by electron dissociation, react with surface groups. The requirement for relatively high pressures of hydrogen also suggests that atomic hydrogen was responsible for the large enhancement and regeneration effects. The ability to regenerate emission from contaminated cNT can prolong emitter device lifetimes and save cost.
{"title":"Robust and regenerable integrally gated carbon nanotube field emitter arrays","authors":"D. Hsu, J. Shaw","doi":"10.1109/IVNC.2004.1354981","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354981","url":null,"abstract":"Multiwalled carbon nanotubes (cNTs) in both the gated cNT-on-Si post and the cNT-in-open configurations were used in this study. Large increases in field emission current were observed when operating cNTs in substantial pressures of hydrogen, especially after the nanotubes have been contaminated with oxygen. Emission degradation was likely due to surface contamination with oxygen and was removed by reaction with hydrogen (atoms). Exposure of the emitters to molecular hydrogen or oxygen when the arrays are not emitting has no effect on the emission produced once the gases are removed, suggesting that the nanotubes are inert to the molecular forms of hydrogen and oxygen and that the atomic forms, which are created by electron dissociation, react with surface groups. The requirement for relatively high pressures of hydrogen also suggests that atomic hydrogen was responsible for the large enhancement and regeneration effects. The ability to regenerate emission from contaminated cNT can prolong emitter device lifetimes and save cost.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123961348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354998
A. Hosono, T. Shiroishi, F. Abe, Z. Shen, S. Nakata, S. Okuda
The printed carbon nanotubes (CNTs) on the substrate were stood erect by the laser treatment and they worked as emission sites. The emission characteristics was improved drastically by the laser treatment up to the turn-on voltage 2 V//spl mu/m and the current density 4 mA/cm/sup 2/, approximately. A certain level of height of CNT (approximately 3 /spl mu/m) is necessary to lower the turn-on voltage and reduce emission variation effectively.
{"title":"Emission characteristics of printed CNT cathodes after laser treatment","authors":"A. Hosono, T. Shiroishi, F. Abe, Z. Shen, S. Nakata, S. Okuda","doi":"10.1109/IVNC.2004.1354998","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354998","url":null,"abstract":"The printed carbon nanotubes (CNTs) on the substrate were stood erect by the laser treatment and they worked as emission sites. The emission characteristics was improved drastically by the laser treatment up to the turn-on voltage 2 V//spl mu/m and the current density 4 mA/cm/sup 2/, approximately. A certain level of height of CNT (approximately 3 /spl mu/m) is necessary to lower the turn-on voltage and reduce emission variation effectively.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"15 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127667443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2004-07-11DOI: 10.1109/IVNC.2004.1354881
Sungil Bae, K. Park, Soonil Lee, K. Koh
The suppression of gate current was realized by introducing an extra conducting layer between gate-insulators and cathode layers. A new type of triode emitters were fabricated, in which carbon emitter layers were positioned at the central part of the well bottom formed in silicon well structures. The silicon well structure was formed using reactive ion etching (RIE). Because of the favorable field distribution using heavily doped /spl eta/-type silicon, we were able to suppress the gate current almost completely.
{"title":"Triode emitters with well-structure cathode","authors":"Sungil Bae, K. Park, Soonil Lee, K. Koh","doi":"10.1109/IVNC.2004.1354881","DOIUrl":"https://doi.org/10.1109/IVNC.2004.1354881","url":null,"abstract":"The suppression of gate current was realized by introducing an extra conducting layer between gate-insulators and cathode layers. A new type of triode emitters were fabricated, in which carbon emitter layers were positioned at the central part of the well bottom formed in silicon well structures. The silicon well structure was formed using reactive ion etching (RIE). Because of the favorable field distribution using heavily doped /spl eta/-type silicon, we were able to suppress the gate current almost completely.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129334029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai
The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.
{"title":"Observation of electron emission pattern from nano-split emitter fabricated using beam assisted process","authors":"K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai","doi":"10.1116/1.1875372","DOIUrl":"https://doi.org/10.1116/1.1875372","url":null,"abstract":"The possibility of interference of electrons from a nano-split emitter fabricated using beam assisted processes has been investigated. With the gap size of 16 nm, the emission pattern with two spots was observed at a gate voltage close to the turn-on voltage. At the higher gate voltages, two spots become overlapped but no interference fringes were observed at room temperature.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128450271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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