Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429641
Hung-Wei Wu, M. Weng, Y. Su, C. Hung, Ru‐Yuan Yang
In this paper, effective dielectric constant, line attenuation and characteristic impedance, average power handling capability (APHC) of DC-biased thin film microstrip line (TFML) as interconnection for monolithic microwave integrated circuits (MMICs) is investigated. The TFML is fabricated on standard low resistivity silicon (LRS) substrate (rho les 10 Omega-cm ) by incorporating a spin-on dielectric polyimide and sputtering of aluminum. An accurate on-wafer-procedure for extracting the microwave characteristics of TFML up to 50 GHz is described and the method is successfully applied to low-K polyimide deposited on the silicon.
{"title":"Evaluation of loss and APHC of DC-biased low K transmission line in MMICs technologies","authors":"Hung-Wei Wu, M. Weng, Y. Su, C. Hung, Ru‐Yuan Yang","doi":"10.1109/APMC.2006.4429641","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429641","url":null,"abstract":"In this paper, effective dielectric constant, line attenuation and characteristic impedance, average power handling capability (APHC) of DC-biased thin film microstrip line (TFML) as interconnection for monolithic microwave integrated circuits (MMICs) is investigated. The TFML is fabricated on standard low resistivity silicon (LRS) substrate (rho les 10 Omega-cm ) by incorporating a spin-on dielectric polyimide and sputtering of aluminum. An accurate on-wafer-procedure for extracting the microwave characteristics of TFML up to 50 GHz is described and the method is successfully applied to low-K polyimide deposited on the silicon.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133940473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429485
Chien-Chang Huang
In this paper the analytic solutions of ground bounce problems on the power/ground plane structures of printed circuit boards (PCBs) are presented based on the perfect magnetic wall assumptions of the PCB's edges. The Green's function of the infinite power/ground plane is first derived, and then the sidewall reflections are replaced by the image sources, resulting the voltage expressions on the PCB explicitly. The numerical results are compared with the cavity-model analysis and measured data to validate the proposed approach.
{"title":"Analytic solutions of ground bounces in PCBs using perfect magnetic wall approximations","authors":"Chien-Chang Huang","doi":"10.1109/APMC.2006.4429485","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429485","url":null,"abstract":"In this paper the analytic solutions of ground bounce problems on the power/ground plane structures of printed circuit boards (PCBs) are presented based on the perfect magnetic wall assumptions of the PCB's edges. The Green's function of the infinite power/ground plane is first derived, and then the sidewall reflections are replaced by the image sources, resulting the voltage expressions on the PCB explicitly. The numerical results are compared with the cavity-model analysis and measured data to validate the proposed approach.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133945242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429708
C. Ho, B. Chiou
In this paper we use the Cu/Ta/HSQ interconnect structures for high frequency characteristics. Then, ammonia (NH3) plasma is employed for the nitridation of HSQ. The effects of NH3 plasma treatments on the high frequency characteristics (100 MHz to 20 GHz) of the interconnect structure Cu/Ta/HSQ are discussed. Among various specimens in this study, the smallest insertion loss is 1.97 dB/mm at 20 GHz for the 400degC- annealed Cu/Ta/HSQ(NH3-plasma-treated for 50 sec). Appropriate NH3-plasma bombardment helps to form a thin SiNx barrier layer which prevents the diffusion of oxygen without increasing the dielectric constant of the Cu-HSQ interconnect system. The dielectric constant of HSQ decreases and then increases with the increase of NH3 plasma treatment time and a minimum dielectric constant of 2.2 is obtained after 50 sec NH3 plasma treatment. Finally, the crosstalk noises among all specimens were measured and the FOM was used to evaluate all specimens.
{"title":"High frequency characteristics of Cu/Ta/hydrogen silsesquioxane (HSQ) system and the effects of NH3 plasma treatment on the electrical properties for hydrogen silsesquioxane","authors":"C. Ho, B. Chiou","doi":"10.1109/APMC.2006.4429708","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429708","url":null,"abstract":"In this paper we use the Cu/Ta/HSQ interconnect structures for high frequency characteristics. Then, ammonia (NH3) plasma is employed for the nitridation of HSQ. The effects of NH3 plasma treatments on the high frequency characteristics (100 MHz to 20 GHz) of the interconnect structure Cu/Ta/HSQ are discussed. Among various specimens in this study, the smallest insertion loss is 1.97 dB/mm at 20 GHz for the 400degC- annealed Cu/Ta/HSQ(NH3-plasma-treated for 50 sec). Appropriate NH3-plasma bombardment helps to form a thin SiNx barrier layer which prevents the diffusion of oxygen without increasing the dielectric constant of the Cu-HSQ interconnect system. The dielectric constant of HSQ decreases and then increases with the increase of NH3 plasma treatment time and a minimum dielectric constant of 2.2 is obtained after 50 sec NH3 plasma treatment. Finally, the crosstalk noises among all specimens were measured and the FOM was used to evaluate all specimens.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132116700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429530
S. Otto, A. Lauer, J. Kassner, A. Rennings
A filter optimization strategy based on full wave EM simulations is proposed. With the introduction of additional internal ports in the filter model, the multi-port admittance-matrix (Y-matrix) is obtained. The main advantage lies in the fact that the filter's basic parameters, as there are the resonant frequency of each resonator, the coupling coefficients and the external Qs are directly accessible through the multi-port Y-matrix. These values are known to give a broad insight into the filter and allow a straightforward optimization procedure to meet the specified data of the synthesis. Furthermore, parasitic effects and design restrictions can be identified and even quantified. Here, an example of a combline filter with a six pole Chebyshev characteristic has been chosen to demonstrate the technique and to verify the method, which can be adapted to other types of filters as well as to other characteristics. Based on this example, a parasitic external coupling was identified and compensated illustrating the advantages of this method.
{"title":"Full wave coupled resonator filter optimization using a multi-port admittance-matrix","authors":"S. Otto, A. Lauer, J. Kassner, A. Rennings","doi":"10.1109/APMC.2006.4429530","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429530","url":null,"abstract":"A filter optimization strategy based on full wave EM simulations is proposed. With the introduction of additional internal ports in the filter model, the multi-port admittance-matrix (Y-matrix) is obtained. The main advantage lies in the fact that the filter's basic parameters, as there are the resonant frequency of each resonator, the coupling coefficients and the external Qs are directly accessible through the multi-port Y-matrix. These values are known to give a broad insight into the filter and allow a straightforward optimization procedure to meet the specified data of the synthesis. Furthermore, parasitic effects and design restrictions can be identified and even quantified. Here, an example of a combline filter with a six pole Chebyshev characteristic has been chosen to demonstrate the technique and to verify the method, which can be adapted to other types of filters as well as to other characteristics. Based on this example, a parasitic external coupling was identified and compensated illustrating the advantages of this method.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132219908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429461
J-W. Lee, S-W. Kim, Gyungseon Seol, K. Seo
This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 mum GaAs metamorphic high electron-mobility transistors (MHEMTs). The devices with a 0.12 mum gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an fT of 170 GHz, and an fMAX of more than 300 GHz. By combining two sub-oscillators having 6 x 50 mum peripheries MHEMT, the push-push oscillator achieved 5.8 dBm of output power at 59.9 GHz with good fundamental suppression. This is the first monolithic push-push oscillator in 60 GHz band fabricated using MHEMT technology, and demonstrates a potential of MHEMT for cost effective millimeter wave commercial applications.
{"title":"A high power performance 60 GHz push-push oscillator MMIC in metamorphic HEMT technology","authors":"J-W. Lee, S-W. Kim, Gyungseon Seol, K. Seo","doi":"10.1109/APMC.2006.4429461","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429461","url":null,"abstract":"This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 mum GaAs metamorphic high electron-mobility transistors (MHEMTs). The devices with a 0.12 mum gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an fT of 170 GHz, and an fMAX of more than 300 GHz. By combining two sub-oscillators having 6 x 50 mum peripheries MHEMT, the push-push oscillator achieved 5.8 dBm of output power at 59.9 GHz with good fundamental suppression. This is the first monolithic push-push oscillator in 60 GHz band fabricated using MHEMT technology, and demonstrates a potential of MHEMT for cost effective millimeter wave commercial applications.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132340307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429546
H. Ehm, S. Winter, R. Weigel
This paper presents a rigorous analytic approach for the quantization of OFDM signals. The signal-to-noise ratio at the ADC output is derived as a function of the input signal's standard deviation and the ADC input range. Furthermore, the maximum signal-to-noise ratio is calculated for various ADC resolutions. The analytic results are verified by simulations applying an OFDM WLAN signal as well as normal distributed white Gaussian noise.
{"title":"Analytic quantization modeling of OFDM signals using normal Gaussian distribution","authors":"H. Ehm, S. Winter, R. Weigel","doi":"10.1109/APMC.2006.4429546","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429546","url":null,"abstract":"This paper presents a rigorous analytic approach for the quantization of OFDM signals. The signal-to-noise ratio at the ADC output is derived as a function of the input signal's standard deviation and the ADC input range. Furthermore, the maximum signal-to-noise ratio is calculated for various ADC resolutions. The analytic results are verified by simulations applying an OFDM WLAN signal as well as normal distributed white Gaussian noise.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133858008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429611
Jan-Dong Tseng, Wei-Ting Liu
An interdigital low-pass structure directly replacing center open stub of odd-order open stub low-pass filter to achieve sharp skirt response is proposed. The characteristics of interdigital structure were first analyzed by lumped elements equivalent circuits and investigated by full-wave microwave circuit simulator, IE3D. These simulated results were then applied as guideline for the replacement. An open stub low-pass filter was developed by this method to enhance the skirt response near 3 dB cutoff frequency and fabricated on RO-4003C substrate. The measured results show very good improvement on skirt response and the rejection level in stop band.
{"title":"Circuit direct replacement method enhanced skirt response of open stub low-pass filter","authors":"Jan-Dong Tseng, Wei-Ting Liu","doi":"10.1109/APMC.2006.4429611","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429611","url":null,"abstract":"An interdigital low-pass structure directly replacing center open stub of odd-order open stub low-pass filter to achieve sharp skirt response is proposed. The characteristics of interdigital structure were first analyzed by lumped elements equivalent circuits and investigated by full-wave microwave circuit simulator, IE3D. These simulated results were then applied as guideline for the replacement. An open stub low-pass filter was developed by this method to enhance the skirt response near 3 dB cutoff frequency and fabricated on RO-4003C substrate. The measured results show very good improvement on skirt response and the rejection level in stop band.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"120 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124475944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429631
Ching-Luh Hsu, J. Kuo
Two microstrip filters are diplexed at the input and output ports to realize a dual-band characteristic. The center frequencies, bandwidths and orders can be quite arbitrary since the two individual filters are realized independently. T- junctions are used to connect filters in parallel and extended microstrip arms are added to each filter for minimizing the mutual couplings at design frequencies. Two-port F-parameter analysis is performed to determine the length of the arms. Three experimental circuits are fabricated and measured to validate the design idea. All the measured results agree well with the simulation.
{"title":"Design of microstrip dual-band filters using a double- diplexing configuration","authors":"Ching-Luh Hsu, J. Kuo","doi":"10.1109/APMC.2006.4429631","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429631","url":null,"abstract":"Two microstrip filters are diplexed at the input and output ports to realize a dual-band characteristic. The center frequencies, bandwidths and orders can be quite arbitrary since the two individual filters are realized independently. T- junctions are used to connect filters in parallel and extended microstrip arms are added to each filter for minimizing the mutual couplings at design frequencies. Two-port F-parameter analysis is performed to determine the length of the arms. Three experimental circuits are fabricated and measured to validate the design idea. All the measured results agree well with the simulation.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122125922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429649
Jang-Gu Kim, K. Okada, T. Yammouch, T. Sato, K. Masu
This paper presents a left-handed material microstrip transmission line on Si CMOS chip using wafer level package (WLP) process. The left- handed materials (LHM) of the novel structure extend from 0.01 GHz to 20 GHz, performing in much wider bandwidth than those reported so far. Composite right/left-handed material (CRLH TL) microstrip line consists of metal-insulator-metal (MIM) capacitors, microstrip transmission lines (TLs) and inductors fabricated by the wafer level package (WLP) process, and it performs as a high-pass filter. The proposed structure is more compact in size and exhibits better insertion and return loss characteristics around the design frequency. The compactness and broad left-handed operation make the proposed left-handed material be well incorporated with Si CMOS RF/Microwave applications.
{"title":"An left handed material on Si CMOS chip with wafer level package process","authors":"Jang-Gu Kim, K. Okada, T. Yammouch, T. Sato, K. Masu","doi":"10.1109/APMC.2006.4429649","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429649","url":null,"abstract":"This paper presents a left-handed material microstrip transmission line on Si CMOS chip using wafer level package (WLP) process. The left- handed materials (LHM) of the novel structure extend from 0.01 GHz to 20 GHz, performing in much wider bandwidth than those reported so far. Composite right/left-handed material (CRLH TL) microstrip line consists of metal-insulator-metal (MIM) capacitors, microstrip transmission lines (TLs) and inductors fabricated by the wafer level package (WLP) process, and it performs as a high-pass filter. The proposed structure is more compact in size and exhibits better insertion and return loss characteristics around the design frequency. The compactness and broad left-handed operation make the proposed left-handed material be well incorporated with Si CMOS RF/Microwave applications.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131730772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429562
Bing Liu, W. Hong, Ling Tian, H. Zhu, Wei Jiang, K. Wu
With merits of low loss and highly integration, substrate integrated waveguide (SIW) has been widely used in the designs of modern microwave and millimeter circuits. However it suffers from the big size in low microwave band. Recently, a novel half mode substrate integrated waveguide (HMSIW) has been proposed, which keeps the good performance of SIW with a nearly 50% reduction in size. So far, no HMSIW multi-way power divider is reported, mainly because of the unsymmetry of itself. In this paper, a new HMSIW T-junction is proposed, with which the design of HMSIW multi-way power divider become feasible, and two classes of multi-way power dividers. The agreement between measured data and simulated results shows that HMSIW can be used to design effective feeds for planar array antenna.
{"title":"Half mode substrate integrated waveguide (HMSIW) multi-way power divider","authors":"Bing Liu, W. Hong, Ling Tian, H. Zhu, Wei Jiang, K. Wu","doi":"10.1109/APMC.2006.4429562","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429562","url":null,"abstract":"With merits of low loss and highly integration, substrate integrated waveguide (SIW) has been widely used in the designs of modern microwave and millimeter circuits. However it suffers from the big size in low microwave band. Recently, a novel half mode substrate integrated waveguide (HMSIW) has been proposed, which keeps the good performance of SIW with a nearly 50% reduction in size. So far, no HMSIW multi-way power divider is reported, mainly because of the unsymmetry of itself. In this paper, a new HMSIW T-junction is proposed, with which the design of HMSIW multi-way power divider become feasible, and two classes of multi-way power dividers. The agreement between measured data and simulated results shows that HMSIW can be used to design effective feeds for planar array antenna.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134604571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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