Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429641
Hung-Wei Wu, M. Weng, Y. Su, C. Hung, Ru‐Yuan Yang
In this paper, effective dielectric constant, line attenuation and characteristic impedance, average power handling capability (APHC) of DC-biased thin film microstrip line (TFML) as interconnection for monolithic microwave integrated circuits (MMICs) is investigated. The TFML is fabricated on standard low resistivity silicon (LRS) substrate (rho les 10 Omega-cm ) by incorporating a spin-on dielectric polyimide and sputtering of aluminum. An accurate on-wafer-procedure for extracting the microwave characteristics of TFML up to 50 GHz is described and the method is successfully applied to low-K polyimide deposited on the silicon.
{"title":"Evaluation of loss and APHC of DC-biased low K transmission line in MMICs technologies","authors":"Hung-Wei Wu, M. Weng, Y. Su, C. Hung, Ru‐Yuan Yang","doi":"10.1109/APMC.2006.4429641","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429641","url":null,"abstract":"In this paper, effective dielectric constant, line attenuation and characteristic impedance, average power handling capability (APHC) of DC-biased thin film microstrip line (TFML) as interconnection for monolithic microwave integrated circuits (MMICs) is investigated. The TFML is fabricated on standard low resistivity silicon (LRS) substrate (rho les 10 Omega-cm ) by incorporating a spin-on dielectric polyimide and sputtering of aluminum. An accurate on-wafer-procedure for extracting the microwave characteristics of TFML up to 50 GHz is described and the method is successfully applied to low-K polyimide deposited on the silicon.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133940473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429485
Chien-Chang Huang
In this paper the analytic solutions of ground bounce problems on the power/ground plane structures of printed circuit boards (PCBs) are presented based on the perfect magnetic wall assumptions of the PCB's edges. The Green's function of the infinite power/ground plane is first derived, and then the sidewall reflections are replaced by the image sources, resulting the voltage expressions on the PCB explicitly. The numerical results are compared with the cavity-model analysis and measured data to validate the proposed approach.
{"title":"Analytic solutions of ground bounces in PCBs using perfect magnetic wall approximations","authors":"Chien-Chang Huang","doi":"10.1109/APMC.2006.4429485","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429485","url":null,"abstract":"In this paper the analytic solutions of ground bounce problems on the power/ground plane structures of printed circuit boards (PCBs) are presented based on the perfect magnetic wall assumptions of the PCB's edges. The Green's function of the infinite power/ground plane is first derived, and then the sidewall reflections are replaced by the image sources, resulting the voltage expressions on the PCB explicitly. The numerical results are compared with the cavity-model analysis and measured data to validate the proposed approach.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133945242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429708
C. Ho, B. Chiou
In this paper we use the Cu/Ta/HSQ interconnect structures for high frequency characteristics. Then, ammonia (NH3) plasma is employed for the nitridation of HSQ. The effects of NH3 plasma treatments on the high frequency characteristics (100 MHz to 20 GHz) of the interconnect structure Cu/Ta/HSQ are discussed. Among various specimens in this study, the smallest insertion loss is 1.97 dB/mm at 20 GHz for the 400degC- annealed Cu/Ta/HSQ(NH3-plasma-treated for 50 sec). Appropriate NH3-plasma bombardment helps to form a thin SiNx barrier layer which prevents the diffusion of oxygen without increasing the dielectric constant of the Cu-HSQ interconnect system. The dielectric constant of HSQ decreases and then increases with the increase of NH3 plasma treatment time and a minimum dielectric constant of 2.2 is obtained after 50 sec NH3 plasma treatment. Finally, the crosstalk noises among all specimens were measured and the FOM was used to evaluate all specimens.
{"title":"High frequency characteristics of Cu/Ta/hydrogen silsesquioxane (HSQ) system and the effects of NH3 plasma treatment on the electrical properties for hydrogen silsesquioxane","authors":"C. Ho, B. Chiou","doi":"10.1109/APMC.2006.4429708","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429708","url":null,"abstract":"In this paper we use the Cu/Ta/HSQ interconnect structures for high frequency characteristics. Then, ammonia (NH3) plasma is employed for the nitridation of HSQ. The effects of NH3 plasma treatments on the high frequency characteristics (100 MHz to 20 GHz) of the interconnect structure Cu/Ta/HSQ are discussed. Among various specimens in this study, the smallest insertion loss is 1.97 dB/mm at 20 GHz for the 400degC- annealed Cu/Ta/HSQ(NH3-plasma-treated for 50 sec). Appropriate NH3-plasma bombardment helps to form a thin SiNx barrier layer which prevents the diffusion of oxygen without increasing the dielectric constant of the Cu-HSQ interconnect system. The dielectric constant of HSQ decreases and then increases with the increase of NH3 plasma treatment time and a minimum dielectric constant of 2.2 is obtained after 50 sec NH3 plasma treatment. Finally, the crosstalk noises among all specimens were measured and the FOM was used to evaluate all specimens.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132116700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429530
S. Otto, A. Lauer, J. Kassner, A. Rennings
A filter optimization strategy based on full wave EM simulations is proposed. With the introduction of additional internal ports in the filter model, the multi-port admittance-matrix (Y-matrix) is obtained. The main advantage lies in the fact that the filter's basic parameters, as there are the resonant frequency of each resonator, the coupling coefficients and the external Qs are directly accessible through the multi-port Y-matrix. These values are known to give a broad insight into the filter and allow a straightforward optimization procedure to meet the specified data of the synthesis. Furthermore, parasitic effects and design restrictions can be identified and even quantified. Here, an example of a combline filter with a six pole Chebyshev characteristic has been chosen to demonstrate the technique and to verify the method, which can be adapted to other types of filters as well as to other characteristics. Based on this example, a parasitic external coupling was identified and compensated illustrating the advantages of this method.
{"title":"Full wave coupled resonator filter optimization using a multi-port admittance-matrix","authors":"S. Otto, A. Lauer, J. Kassner, A. Rennings","doi":"10.1109/APMC.2006.4429530","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429530","url":null,"abstract":"A filter optimization strategy based on full wave EM simulations is proposed. With the introduction of additional internal ports in the filter model, the multi-port admittance-matrix (Y-matrix) is obtained. The main advantage lies in the fact that the filter's basic parameters, as there are the resonant frequency of each resonator, the coupling coefficients and the external Qs are directly accessible through the multi-port Y-matrix. These values are known to give a broad insight into the filter and allow a straightforward optimization procedure to meet the specified data of the synthesis. Furthermore, parasitic effects and design restrictions can be identified and even quantified. Here, an example of a combline filter with a six pole Chebyshev characteristic has been chosen to demonstrate the technique and to verify the method, which can be adapted to other types of filters as well as to other characteristics. Based on this example, a parasitic external coupling was identified and compensated illustrating the advantages of this method.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132219908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429461
J-W. Lee, S-W. Kim, Gyungseon Seol, K. Seo
This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 mum GaAs metamorphic high electron-mobility transistors (MHEMTs). The devices with a 0.12 mum gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an fT of 170 GHz, and an fMAX of more than 300 GHz. By combining two sub-oscillators having 6 x 50 mum peripheries MHEMT, the push-push oscillator achieved 5.8 dBm of output power at 59.9 GHz with good fundamental suppression. This is the first monolithic push-push oscillator in 60 GHz band fabricated using MHEMT technology, and demonstrates a potential of MHEMT for cost effective millimeter wave commercial applications.
{"title":"A high power performance 60 GHz push-push oscillator MMIC in metamorphic HEMT technology","authors":"J-W. Lee, S-W. Kim, Gyungseon Seol, K. Seo","doi":"10.1109/APMC.2006.4429461","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429461","url":null,"abstract":"This paper reports a high power 60 GHz push-push oscillator fabricated using 0.12 mum GaAs metamorphic high electron-mobility transistors (MHEMTs). The devices with a 0.12 mum gate-length exhibited good DC and RF characteristics such as a maximum drain current of 700 mA/mm, a peak gm of 660 mS/mm, an fT of 170 GHz, and an fMAX of more than 300 GHz. By combining two sub-oscillators having 6 x 50 mum peripheries MHEMT, the push-push oscillator achieved 5.8 dBm of output power at 59.9 GHz with good fundamental suppression. This is the first monolithic push-push oscillator in 60 GHz band fabricated using MHEMT technology, and demonstrates a potential of MHEMT for cost effective millimeter wave commercial applications.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132340307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429546
H. Ehm, S. Winter, R. Weigel
This paper presents a rigorous analytic approach for the quantization of OFDM signals. The signal-to-noise ratio at the ADC output is derived as a function of the input signal's standard deviation and the ADC input range. Furthermore, the maximum signal-to-noise ratio is calculated for various ADC resolutions. The analytic results are verified by simulations applying an OFDM WLAN signal as well as normal distributed white Gaussian noise.
{"title":"Analytic quantization modeling of OFDM signals using normal Gaussian distribution","authors":"H. Ehm, S. Winter, R. Weigel","doi":"10.1109/APMC.2006.4429546","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429546","url":null,"abstract":"This paper presents a rigorous analytic approach for the quantization of OFDM signals. The signal-to-noise ratio at the ADC output is derived as a function of the input signal's standard deviation and the ADC input range. Furthermore, the maximum signal-to-noise ratio is calculated for various ADC resolutions. The analytic results are verified by simulations applying an OFDM WLAN signal as well as normal distributed white Gaussian noise.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"314 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133858008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429810
N. Ito, A. Mase, N. Seko, M. Tamada, E. Sakata, Y. Kogi
Polytetrafluoroethylene (PTFE) has many desirable properties for substrates of millimeter-wave planar antennas such as low dielectric constant and loss tangent. However, it has weak adhesion to various metals. Surface treatment of PTFE via radiation-induced graft polymerization was carried out to improve the adhesion. The peel adhesion strength of the PTFE/Cu was attained to be 10.3 N/cm by the treatment. The dielectric function of grafted- PTFE remained almost unchanged after the graft polymerization. The design and fabrication of millimeter-wave antennas on the treated PTFE substrates have been performed using electro-fine- forming (EF2) technology.
{"title":"Development of low-loss millimeter-wave antennas on fluorine substrate using electro-fine-forming fabrication","authors":"N. Ito, A. Mase, N. Seko, M. Tamada, E. Sakata, Y. Kogi","doi":"10.1109/APMC.2006.4429810","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429810","url":null,"abstract":"Polytetrafluoroethylene (PTFE) has many desirable properties for substrates of millimeter-wave planar antennas such as low dielectric constant and loss tangent. However, it has weak adhesion to various metals. Surface treatment of PTFE via radiation-induced graft polymerization was carried out to improve the adhesion. The peel adhesion strength of the PTFE/Cu was attained to be 10.3 N/cm by the treatment. The dielectric function of grafted- PTFE remained almost unchanged after the graft polymerization. The design and fabrication of millimeter-wave antennas on the treated PTFE substrates have been performed using electro-fine- forming (EF2) technology.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114669045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429612
Tze-Min Shen, Ting-Yi Hung, Chi‐Feng Chen, R. Wu
This paper proposes a new cross coupling structure of a vertically stacked waveguide filter in a multilayer low-temperature co-fire ceramic technology. The filter is excited by open-ended microstrip lines. Adjacent cavities are coupled vertically by narrow slots. Cross coupling for quasi-elliptic response is realized by through vias and short-circuited CPW feed line. From the results, the circuit area of the filter can be reduced to about one single cavity size.
{"title":"Design of a vertically stackedwaveguide filter with novel cross coupling structures in LTCC","authors":"Tze-Min Shen, Ting-Yi Hung, Chi‐Feng Chen, R. Wu","doi":"10.1109/APMC.2006.4429612","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429612","url":null,"abstract":"This paper proposes a new cross coupling structure of a vertically stacked waveguide filter in a multilayer low-temperature co-fire ceramic technology. The filter is excited by open-ended microstrip lines. Adjacent cavities are coupled vertically by narrow slots. Cross coupling for quasi-elliptic response is realized by through vias and short-circuited CPW feed line. From the results, the circuit area of the filter can be reduced to about one single cavity size.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114538663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429811
M. Ismail, W. Hu, R. Cahill, H. Gamble, R. Dickie, V. Fusco, D. Linton, S. Rea, N. Grant
In this paper we demonstrate that the anisotropic property of liquid crystal can be exploited to control the phase of signals that are reflected from a reflectarray cell. Numerical and measured results at X-band are used to compare the plane wave scattering from two reflectarray cells which are constructed on liquid crystal film of thickness 200 mum and 500 mum. The phase agility, bandwidth and reflection loss are shown to be dependent on both the thickness and the voltage controlled permittivity of the tunable substrate. A tunable phase range greater than 250deg is achieved over a 6.1% bandwidth.
{"title":"Performance of reflectarray cells printed on liquid crystal film","authors":"M. Ismail, W. Hu, R. Cahill, H. Gamble, R. Dickie, V. Fusco, D. Linton, S. Rea, N. Grant","doi":"10.1109/APMC.2006.4429811","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429811","url":null,"abstract":"In this paper we demonstrate that the anisotropic property of liquid crystal can be exploited to control the phase of signals that are reflected from a reflectarray cell. Numerical and measured results at X-band are used to compare the plane wave scattering from two reflectarray cells which are constructed on liquid crystal film of thickness 200 mum and 500 mum. The phase agility, bandwidth and reflection loss are shown to be dependent on both the thickness and the voltage controlled permittivity of the tunable substrate. A tunable phase range greater than 250deg is achieved over a 6.1% bandwidth.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114855442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429462
L. Zhang
This paper introduces the method to accurately measure phase-locked loop (PLL) lock time in a multi-site production environment. This method is also applicable for measuring RF transceiver frequency settling time, frequency and phase errors after settling for multiple devices under test (DUT) in parallel using either on board frequency mixers and RF signal generators or using RF receivers of automated test equipment (ATE).
{"title":"Accurately measure phase-locked loop lock time in production","authors":"L. Zhang","doi":"10.1109/APMC.2006.4429462","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429462","url":null,"abstract":"This paper introduces the method to accurately measure phase-locked loop (PLL) lock time in a multi-site production environment. This method is also applicable for measuring RF transceiver frequency settling time, frequency and phase errors after settling for multiple devices under test (DUT) in parallel using either on board frequency mixers and RF signal generators or using RF receivers of automated test equipment (ATE).","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114859858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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