Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429703
Chiung-Feng Tai, I-Chia Chen, H. Chiou
A novel bandpass filter using the cascaded CPW/slotline ring resonators with tapered step impedance CPW fed structure is proposed. This fed structure not only provides two transmission zeros for the bandpass filter at the lower and upper passband edges but also makes the filter with very compact size. The CPW/Slotline ring resonators utilize a pair of anti-coupled lines to create poles. Moreover, the central frequency and coupling coefficient can be obtained by adjusting the anti-coupling gap. In this paper, two kinds of bandpss filters with CPW/Slotline ring resonators are demonstrated which have fabricated on conventional FR-4 substrate. The measured insertion loss is less than 3 dB and the return loss is better than 15 dB across 10% bandwidth. The measured results show good agreement with HFSS simulated results.
{"title":"A novel bandpass filter design using cascaded CPW/Slotline ring resonators with tapered step impedance CPW fed structure","authors":"Chiung-Feng Tai, I-Chia Chen, H. Chiou","doi":"10.1109/APMC.2006.4429703","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429703","url":null,"abstract":"A novel bandpass filter using the cascaded CPW/slotline ring resonators with tapered step impedance CPW fed structure is proposed. This fed structure not only provides two transmission zeros for the bandpass filter at the lower and upper passband edges but also makes the filter with very compact size. The CPW/Slotline ring resonators utilize a pair of anti-coupled lines to create poles. Moreover, the central frequency and coupling coefficient can be obtained by adjusting the anti-coupling gap. In this paper, two kinds of bandpss filters with CPW/Slotline ring resonators are demonstrated which have fabricated on conventional FR-4 substrate. The measured insertion loss is less than 3 dB and the return loss is better than 15 dB across 10% bandwidth. The measured results show good agreement with HFSS simulated results.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"12 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121000513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429749
K. Mutamba, D. Neculoiu, A. Muller, G. Konstantinidis, D. Vasilache, C. Sydlo, A. Kostopoulos, A. Adikimenakis, A. Georgakilas, H. Hartnagel
This paper reports on microwave characteristics of micromachined GaN-based thin-film bulk acoustic resonator devices. The 2.2 micron active piezoelectric layer was epitaxially grown on (111)-oriented high-resistivity silicon substrate. Bulk micromachining techniques were used for the release of the resonating GaN membrane structure. S-parameter measurements have shown a fundamental mode resonance around 1.2 GHz. Extracted material parameters such as acoustic velocity and effective coupling coefficient are in good agreement with those reported in the literature using other methods. These are, to our knowledge, the first FBAR results with GaN-based active layers.
{"title":"Micromachined GaN-based FBAR structures for microwave applications","authors":"K. Mutamba, D. Neculoiu, A. Muller, G. Konstantinidis, D. Vasilache, C. Sydlo, A. Kostopoulos, A. Adikimenakis, A. Georgakilas, H. Hartnagel","doi":"10.1109/APMC.2006.4429749","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429749","url":null,"abstract":"This paper reports on microwave characteristics of micromachined GaN-based thin-film bulk acoustic resonator devices. The 2.2 micron active piezoelectric layer was epitaxially grown on (111)-oriented high-resistivity silicon substrate. Bulk micromachining techniques were used for the release of the resonating GaN membrane structure. S-parameter measurements have shown a fundamental mode resonance around 1.2 GHz. Extracted material parameters such as acoustic velocity and effective coupling coefficient are in good agreement with those reported in the literature using other methods. These are, to our knowledge, the first FBAR results with GaN-based active layers.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124957522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429378
Jin-Kyoung Du, Jung-min Kim, Seung-Seok Oh, J. Yook
In this paper, the separately arranged suppression patterns are investigated. The suppression band of SSN is critically influenced from the size of patterns rather than the periodicity. By arranging the suppression patterns separately on the power plane, SI problems can be reduced, as well as good suppression characteristics are achieved.
{"title":"Analysis of separately arranged patterns for suppression of Simultaneous Switching Noise","authors":"Jin-Kyoung Du, Jung-min Kim, Seung-Seok Oh, J. Yook","doi":"10.1109/APMC.2006.4429378","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429378","url":null,"abstract":"In this paper, the separately arranged suppression patterns are investigated. The suppression band of SSN is critically influenced from the size of patterns rather than the periodicity. By arranging the suppression patterns separately on the power plane, SI problems can be reduced, as well as good suppression characteristics are achieved.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121361566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429647
A. Rostami, A. Yazdanpanah-Goharrizi
A new method based on artificial neural networks (ANN) for solution of the inverse problem for reconstruction of the complex Bragg gratings, precisely, is proposed. The Runge-Kutta method for calculation of spectrum of the reflection coefficient based on the Riccati equation in a fiber Bragg gratings is used and the application of the multilayer perceptron neural network (MLPNN) in inverse scattering problem is considered. The training of the MLPNN is based on the back propagation algorithm. The simulated results of the complex Bragg gratings for given non-uniformity are used as training data. Finally, after training the simulated results of the output of ANN shows effectiveness of the proposed methodology. In this paper the proposed idea is examined for some examples.
{"title":"Identification of complex Bragg gratings (Apodized and chirped) using artificial neural networks (ANN) (inverse problem and ANN)","authors":"A. Rostami, A. Yazdanpanah-Goharrizi","doi":"10.1109/APMC.2006.4429647","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429647","url":null,"abstract":"A new method based on artificial neural networks (ANN) for solution of the inverse problem for reconstruction of the complex Bragg gratings, precisely, is proposed. The Runge-Kutta method for calculation of spectrum of the reflection coefficient based on the Riccati equation in a fiber Bragg gratings is used and the application of the multilayer perceptron neural network (MLPNN) in inverse scattering problem is considered. The training of the MLPNN is based on the back propagation algorithm. The simulated results of the complex Bragg gratings for given non-uniformity are used as training data. Finally, after training the simulated results of the output of ANN shows effectiveness of the proposed methodology. In this paper the proposed idea is examined for some examples.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"73 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114051941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429408
H. Jung, Hoon Park, Sukjin Hong, Uisheon Kim, Jaehoon Choi
In this paper, a novel compact internal wide-band planar inverted F-antenna (PIFA) is presented. The proposed antenna consists of a main patch with stubs and folded plate and occupies a total volume of 36 times 16 times 6 mm3. The dual bands characteristic can be achieved by changing the length of a main patch. A wide impedance bandwidth characteristic was obtained by optimizing the length of folded patch, stubs and shorting strip. The measured impedance bandwidth, determined by 6 dB return loss, of the operating bands reach 10.85% at 922.5 MHz and 58% at 2115 MHz, respectively. The maximum gains at the frequencies of 915, 1576, 1785, 2170, 2400 and 2630 MHz were 1.0, 2.7, 5.43, 4.65 and 1.52, 2.95 dBi, respectively. The overall shapes of the radiation patterns are suitable for mobile communication application.
{"title":"Design of an enhanced bandwidth PIFA with modified shorting strip","authors":"H. Jung, Hoon Park, Sukjin Hong, Uisheon Kim, Jaehoon Choi","doi":"10.1109/APMC.2006.4429408","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429408","url":null,"abstract":"In this paper, a novel compact internal wide-band planar inverted F-antenna (PIFA) is presented. The proposed antenna consists of a main patch with stubs and folded plate and occupies a total volume of 36 times 16 times 6 mm3. The dual bands characteristic can be achieved by changing the length of a main patch. A wide impedance bandwidth characteristic was obtained by optimizing the length of folded patch, stubs and shorting strip. The measured impedance bandwidth, determined by 6 dB return loss, of the operating bands reach 10.85% at 922.5 MHz and 58% at 2115 MHz, respectively. The maximum gains at the frequencies of 915, 1576, 1785, 2170, 2400 and 2630 MHz were 1.0, 2.7, 5.43, 4.65 and 1.52, 2.95 dBi, respectively. The overall shapes of the radiation patterns are suitable for mobile communication application.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122649583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429542
K. Eccleston
In this paper we show an edge-fed 4- port microstripline integrated antenna that has the dual function of power combining as well as being a radiator. The radiation pattern is similar to a two element microstrip half-wave patch array. The edge-feeding allows transistors of an amplifier to be connected directly to the antenna thereby eliminating interconnecting lines. The antenna provides ease of transistor biasing without the need for extra bias circuitry. Experimental results have validated simulations for a prototype operating at 2.47 GHz.
{"title":"Four-way power combining integrated antenna","authors":"K. Eccleston","doi":"10.1109/APMC.2006.4429542","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429542","url":null,"abstract":"In this paper we show an edge-fed 4- port microstripline integrated antenna that has the dual function of power combining as well as being a radiator. The radiation pattern is similar to a two element microstrip half-wave patch array. The edge-feeding allows transistors of an amplifier to be connected directly to the antenna thereby eliminating interconnecting lines. The antenna provides ease of transistor biasing without the need for extra bias circuitry. Experimental results have validated simulations for a prototype operating at 2.47 GHz.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122832870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A quad-band GSM/GPRS power amplifier module is designed with a built-in ability of RF power transmitting control. Within the RF power transmitting control loop, a RF power detecting circuit with another reference circuit are embedded together onto the same InGaP/GaAs HBT power amplifier chip to achieve a good temperature compensation. Such power chips are then assembly with a silicon CMOS comparative chip by the multi-chip module technology and functions as a closed- loop power controlled GSM/GPRS power amplifier module. It had successfully demonstrated as play for all quad-band operations (GSM850, EGSM900, DCS1800, PCS1900).
{"title":"Closed-loop power control of radio frequency power amplifier module with an on-chip embedded power detector","authors":"Janne-Wha Wu, Sheng-Wen Chen, Ching‐Wen Tang, Mingguang Chen","doi":"10.1109/APMC.2006.4429518","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429518","url":null,"abstract":"A quad-band GSM/GPRS power amplifier module is designed with a built-in ability of RF power transmitting control. Within the RF power transmitting control loop, a RF power detecting circuit with another reference circuit are embedded together onto the same InGaP/GaAs HBT power amplifier chip to achieve a good temperature compensation. Such power chips are then assembly with a silicon CMOS comparative chip by the multi-chip module technology and functions as a closed- loop power controlled GSM/GPRS power amplifier module. It had successfully demonstrated as play for all quad-band operations (GSM850, EGSM900, DCS1800, PCS1900).","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131258377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429470
Min-jeong Kim, Nam-Young Kim
An InGaP/GaAs HBT upconversion mixer and VCO is designed by current injection and harmonic noise frequency filtering technique to improve linearity and phase noise performance. The VCO which is combined with mixer, is designed and fabricated with low phase noise of -133.96 dBc/Hz at 1 MHz offset. Since VCO output and mixer input impedances are matched to 50Omega, there is no need an extra matching circuit. The measured conversion gain of the upconversion mixer is 0 dB. It shows the effective gain flatness of 1.2 dB from 1.6 GHz to 1.8 GHz. Also, it has third-order input intercept point (IIP3) of +18 dBm, and a third-order output intercept point (OIP3) of +19.2 dBm. An integrated differential cascode output amplifier generates the input and output-referred 1-dB compression point (PldB) as 1 dBm and 1.2 dBm. The high linearity mixer-VCO is fabricated within a total chip area of 2560 x 900 mum.
{"title":"A high linear upconversion mixer and VCO design using fully integrated current injection technique","authors":"Min-jeong Kim, Nam-Young Kim","doi":"10.1109/APMC.2006.4429470","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429470","url":null,"abstract":"An InGaP/GaAs HBT upconversion mixer and VCO is designed by current injection and harmonic noise frequency filtering technique to improve linearity and phase noise performance. The VCO which is combined with mixer, is designed and fabricated with low phase noise of -133.96 dBc/Hz at 1 MHz offset. Since VCO output and mixer input impedances are matched to 50Omega, there is no need an extra matching circuit. The measured conversion gain of the upconversion mixer is 0 dB. It shows the effective gain flatness of 1.2 dB from 1.6 GHz to 1.8 GHz. Also, it has third-order input intercept point (IIP3) of +18 dBm, and a third-order output intercept point (OIP3) of +19.2 dBm. An integrated differential cascode output amplifier generates the input and output-referred 1-dB compression point (PldB) as 1 dBm and 1.2 dBm. The high linearity mixer-VCO is fabricated within a total chip area of 2560 x 900 mum.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127006054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429685
K. Min, Jin-woo Kim
This paper presents develop of insensitive RFID tag independent about variation of chip impedance. Designed tag antenna is operate at 900MHz bands, and it's performances is maintained when reactance of the chip is changed. If chip reactance changes from -J80 ~ -J270 ohm, this tag takes -10 dB bandwidth in 900 MHz bands. Moreover we confirmed that this tag antenna has ability to use commercial chip model.
{"title":"Development of insensitive RFID tag for variation of chip impedance","authors":"K. Min, Jin-woo Kim","doi":"10.1109/APMC.2006.4429685","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429685","url":null,"abstract":"This paper presents develop of insensitive RFID tag independent about variation of chip impedance. Designed tag antenna is operate at 900MHz bands, and it's performances is maintained when reactance of the chip is changed. If chip reactance changes from -J80 ~ -J270 ohm, this tag takes -10 dB bandwidth in 900 MHz bands. Moreover we confirmed that this tag antenna has ability to use commercial chip model.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115139699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1093/ietele/e90-c.9.1702
N. Ishihara
RF CMOS amplifier design technique using the carrier velocity saturation region on the drain current of the MOS transistor aggressively has been proposed. By setting the transistor gate bias to the power supply voltage (Vdd), stable operation against Vdd variations can be achieved with a simple circuit configuration. By using the technique, a 5 GHz amplifier has been designed and fabricated by using 0.18-μm CMOS process technology. The chip has been operated with a gain variation less than 1 dB having a peak gain of 13.5 dB when Vdd has been changed from 1.2 to 2.9 V. Input and output matching variations are 1 dB and 3 dB with minimum values of ™10.2 dB and ™ 11.5 dB respectively.
{"title":"Vdd gate biasing RF CMOS amplifier design technique based on the effect of carrier velocity saturation","authors":"N. Ishihara","doi":"10.1093/ietele/e90-c.9.1702","DOIUrl":"https://doi.org/10.1093/ietele/e90-c.9.1702","url":null,"abstract":"RF CMOS amplifier design technique using the carrier velocity saturation region on the drain current of the MOS transistor aggressively has been proposed. By setting the transistor gate bias to the power supply voltage (Vdd), stable operation against Vdd variations can be achieved with a simple circuit configuration. By using the technique, a 5 GHz amplifier has been designed and fabricated by using 0.18-μm CMOS process technology. The chip has been operated with a gain variation less than 1 dB having a peak gain of 13.5 dB when Vdd has been changed from 1.2 to 2.9 V. Input and output matching variations are 1 dB and 3 dB with minimum values of ™10.2 dB and ™ 11.5 dB respectively.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"319 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133600471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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