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2006 Asia-Pacific Microwave Conference最新文献

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Ultra-wideband (UWB) bandpass filters with improved upper-stopband performance 改进上阻带性能的超宽带(UWB)带通滤波器
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429372
Sai‐Wai Wong, Sheng Sun, Lei Zhu, Zhi Ning Chen
A novel ultra-wideband (UWB) bandpass filter with improved upper-stopband performance is presented and constituted by integrating an initial UWB filter with two lowpass filters at its two sides. Firstly, a multiple-mode resonator is formed with first three resonant frequencies located within the 3.1-10.6 GHz UWB band while its two-side high-impedance sections are excited by two interdigital coupled lines with enhanced coupling degree, leading to make up an initial UWB filter. Secondly, two 3rd- or 5th-order lowpass filters are designed with their cut-off frequency slightly higher than 10.6 GHz (upper-end), aiming at suppressing the spurious upper-passband near the interested UWB passband. Finally, a resultant UWB bandpass filter is optimized, fabricated and measured to give us an evident confirmation on the improved upper-stopband performance.
提出了一种改进上阻带性能的新型超宽带(UWB)带通滤波器,该滤波器由一个初始UWB滤波器及其两侧的两个低通滤波器集成而成。首先,形成一个多模谐振腔,前三个谐振频率位于3.1-10.6 GHz UWB频段内,其两侧高阻抗部分由两根增强耦合度的数字间耦合线激励,构成初始UWB滤波器。其次,设计了两个3阶或5阶低通滤波器,其截止频率略高于10.6 GHz(上端),旨在抑制感兴趣的UWB通带附近的上带杂散。最后,优化、制作并测量了一个UWB带通滤波器,结果表明该滤波器的上阻带性能得到了明显改善。
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引用次数: 18
A Class of UWB microstrip bandpass filter using quasi-lumped element resonators with controllable stopbands 一类采用带可控阻带的准集总元件谐振器的超宽带微带带通滤波器
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429633
T. Ohno, Y. Ohno, K. Wada, O. Hashimoto
This paper presents an ultra- wideband (UWB) resonator and a bandpass filter (BPF) consisting of quasi- lumped elements using a microstrip line (MSL). First of all, a resonator using a high-impedance inductive line and a gap capacitor is examined by an electromagnetic simulator. The simulated results of the resonator show UWB bandpass characteristics with two controllable stop- bands by adjusting the element values and the length of the resonator. Secondly, an UWB-BPF using the presented resonator is proposed, fabricated, simulated and measured. It is confirmed that desired UWB bandpass characteristics are realized by controlling two stopband characteristics.
提出了一种基于微带线的准集总元件组成的超宽带谐振器和带通滤波器。首先,利用电磁模拟器对采用高阻抗电感线和间隙电容的谐振器进行了研究。仿真结果表明,通过调整元件值和谐振腔长度,该谐振腔具有两个可控阻带的超宽带带通特性。其次,利用该谐振器设计、制作、仿真和测量了UWB-BPF。通过控制两个阻带特性,实现了理想的超宽带带通特性。
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引用次数: 1
Review of helices for DTV broadcast from HAPS prototype 从HAPS原型机对数字电视广播用螺旋的回顾
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429575
D. Gray, M. Nagatsuka, R. Miura
A number of telecommunications experiments were flown on an autonomous, 68 metre non-rigid airship in November 2004. Although the digital television broadcast experiment was successful, it was found that the signal was occasionally entirely lost when the airship passed directly over one receiving station. The performance of the transmit helicial antenna is examined on a simple model of the airship gondola using a commercially available MOM software in attempt to identify features of the antenna that may have adversely affected the radiation pattern during the broadcast experiments. Two other types of helical antenna were also studied, and were found to potentially offer advantages in maintaining radiation pattern shape when installed on the gondola.
2004年11月,在一架68米的非刚性飞艇上进行了一些通信实验。虽然数字电视广播实验是成功的,但是发现当飞艇直接经过一个接收站时,信号偶尔会完全丢失。利用市售MOM软件,在一个简单的飞艇贡多拉模型上测试了发射螺旋天线的性能,试图识别在广播实验期间可能对辐射方向图产生不利影响的天线特征。另外两种类型的螺旋天线也进行了研究,并发现潜在的优势,保持辐射方向图形状时,安装在贡多拉。
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引用次数: 1
A Ka-band low noise amplifier using standard 0.18 μm CMOS technology for Ka-Bnad communication system applications 采用标准0.18 μm CMOS技术的ka波段低噪声放大器,适用于ka - bnaad通信系统
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429430
Shu-Hui Yen, Yo‐Sheng Lin, Chi-Chen Chen
A low-power-consumption (26.93 mW) 32-GHz (Ka-band) low noise amplifier (LNA) using standard 0.18 mum CMOS technology is reported. To achieve sufficient gain, this LNA is composed of three cascaded common-source stages. The output of each stage is loaded with a band-pass (or a high-pass) combination of L and C to provide parallel resonance, i.e. to maximize the gain, at the design frequency. This LNA achieved input return loss (S11) of -13.3 dB, output return loss (S22) of -13.4 dB, forward gain (S21) of 10.2 dB, and reverse isolation (S12) of -19.1 dB at 32 GHz. This LNA consumed only a small dc power of 26.93 mW. The chip area is only 740 mum times 500 mum excluding the test pads.
报道了一种低功耗(26.93 mW) 32 ghz (ka波段)低噪声放大器(LNA),该放大器采用标准0.18 μ m CMOS技术。为了获得足够的增益,该LNA由三个级联的共源级组成。每个级的输出都加载了L和C的带通(或高通)组合,以提供并联谐振,即在设计频率上最大化增益。该LNA在32 GHz时的输入回波损耗(S11)为-13.3 dB,输出回波损耗(S22)为-13.4 dB,正向增益(S21)为10.2 dB,反向隔离(S12)为-19.1 dB。这个LNA只消耗了26.93 mW的直流功率。芯片面积仅为740 μ m乘以500 μ m,不包括测试垫。
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引用次数: 9
Dielectric loaded cavity filter with wide spurious free region and better out-of-band rejection 介质负载腔滤波器具有宽的无杂散区和较好的带外抑制性能
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429622
Xiaoguang Sun, Wei-zhao Li, Lei Ge
Spurious modes suppressions are compared between the dielectric-loaded cavity filters with cylindrical and rectangular structures in this paper. Using mode matching method, mode charts are computed to analyze that. The comparisons show that the cylindrical cavity filter has better spurious response. Also filter with cross-coupling is discussed, which has sharper out-of-band rejection. Three experimental filters are designed and the measured results have good agreement with the analysis.
本文比较了圆柱型和矩形型介质负载腔滤波器对杂散模的抑制效果。采用模态匹配法,计算模态图进行分析。结果表明,圆柱腔滤波器具有更好的杂散响应。还讨论了具有更强带外抑制的交叉耦合滤波器。设计了三种实验滤波器,测量结果与分析结果吻合较好。
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引用次数: 3
Tunable stepped impedance resonator bandpass filter using ferroelectric materials 采用铁电材料的可调谐阶跃阻抗谐振器带通滤波器
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429753
T. Yun, Hyun-Suk Kim, T. Hyun, Sung-su Kwoun
In this paper, a stepped impedance resonator (SIR) bandpass filter using BST thin film as a tunable device has been discussed. For the analysis of relative dielectric constant of BST thin films, the BST interdigital capacitor (IDC) is fabricated with finger's width and gap of 10 mum and 5 mum, respectively, and the capacitance of IDC is 0.951 pF and the relative dielectric constant of BST thin film is 1,097 at 6 GHz. The tunable SIR bandpass filter using BST thin films is designed with coupling section of 22deg and tapped feeding and has been successfully demonstrated with the thickness of BST thin films of 500 mn on the MgO substrate. The center frequency of the tunable SIR bandpass filter is moved from 6.15 GHz to 6.29 GHz at 50 V bias with about 3% bandwidth.
本文讨论了采用BST薄膜作为可调谐器件的阶跃阻抗谐振器(SIR)带通滤波器。为了分析BST薄膜的相对介电常数,制作了指宽为10 μ m、间隙为5 μ m的BST数字间电容(IDC),其电容为0.951 pF, 6 GHz时BST薄膜的相对介电常数为1097。基于BST薄膜的可调谐SIR带通滤波器设计了22度耦合段和带头进料,并在MgO衬底上成功地演示了BST薄膜厚度为500 mn的可调谐SIR带通滤波器。可调谐SIR带通滤波器的中心频率在50 V偏置下从6.15 GHz移动到6.29 GHz,带宽约为3%。
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引用次数: 4
A single-diode frequency doubler using a feed-forward technique 采用前馈技术的单二极管倍频器
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429671
P. Rajanaronk, A. Namahoot, P. Akkaraekthalin
In this paper, a novel single-diode frequency doubler design method is proposed. The output fundamental frequency is suppressed by employing a lambda/2 feed-forward transmission line parallel with a diode instead of using balanced structure with two or more diodes. The deployment of feed-forward line reduces the complexity of matching circuit and the circuit is more compact than doubler circuit without feed-forward line. A single-diode frequency doubler design technique is fully described in detail. The circuit is then fabricated and measured for the performances. The measurement results of 1.2/2.4 GHz frequency doubler agree very well with the simulated performances and exhibit 7.8 dB conversion loss with 170 MHz or 14.12% operating bandwidth.
本文提出了一种新的单二极管倍频器设计方法。输出基频通过采用与二极管并联的lambda/2前馈传输线来抑制,而不是使用带有两个或多个二极管的平衡结构。前馈线路的部署降低了匹配电路的复杂度,电路比没有前馈线路的倍频电路更紧凑。详细介绍了一种单二极管倍频器的设计技术。然后制作电路并测量其性能。1.2/2.4 GHz倍频器的测量结果与仿真结果吻合良好,在170 MHz或14.12%的工作带宽下,转换损耗为7.8 dB。
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引用次数: 4
SiGe HBT power amplifier with distortion-controllable bias circuit and its application to 802.11g wireless LANs 带畸变可控偏置电路的SiGe HBT功率放大器及其在802.11g无线局域网中的应用
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429393
T. Oka, M. Hirata, Y. Ishimaru, H. Kawamura, K. Sakuno
This paper describes a SiGe HBT power amplifier with distortion-controllable bias circuits. MOSFETs employed in the bias circuits enable us to control the distortion of power amplifiers by adjusting the gate voltages. The power amplifier MMIC for 802.11lg wireless LANs fabricated using the technique exhibited excellent linearity and efficiency: a linear output power of 18.3 dBm and a power-added efficiency of 16% were achieved at an EVM of 3%, measured with 54 Mbps 64-QAM OFDM signals at 2.45 GHz.
本文介绍了一种具有畸变可控偏置电路的SiGe HBT功率放大器。偏置电路中使用的mosfet使我们能够通过调节栅极电压来控制功率放大器的失真。使用该技术制作的用于802.11lg无线局域网的功率放大器MMIC具有出色的线性度和效率:在EVM为3%的情况下,在2.45 GHz的54 Mbps 64-QAM OFDM信号下实现了18.3 dBm的线性输出功率和16%的功率附加效率。
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引用次数: 1
Inverted triangle printed monopole antenna with halfdisk for UWB applications 用于超宽带应用的半圆盘倒三角印刷单极天线
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429800
R. Chayono, M. Haneishi, Y. Kimura
A novel printed monopole antenna for UWB applications is presented in this paper. A monopole with a combination of a half-disk and an inverted triangle is installed on a finite ground plane. A slit on the ground plane performs as an impedance controller to obtain matching over wide frequency range. Impedance bandwidth of more than 1:6 is achieved with VSWR<2. Omni-directional patterns are confirmed by simulation and experiments as well. Excellent gain performance is also achieved by the proposed antenna.
本文提出了一种用于超宽带应用的新型印刷单极天线。将半圆盘和倒三角组合的单极子安装在有限地平面上。地平面上的狭缝作为阻抗控制器,在较宽的频率范围内实现匹配。当VSWR<2时,阻抗带宽大于1:6。通过仿真和实验验证了其全向模式。该天线还实现了优异的增益性能。
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引用次数: 6
A new implemenation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor’s nonlinear parameters 一种新的射频SiCMOS晶体管模型的实现,使用SDD来量化晶体管非线性参数对畸变的单个贡献
Pub Date : 2006-12-01 DOI: 10.1109/APMC.2006.4429474
A. Abuelmaatti, I. Thayne, I. McGregor, E. Wasige
This work reports on a new implementation of a transistor model aiming for closer understanding of the nonlinear elements in silicon CMOS transistors operating at high frequencies. Using this model, the contribution of each source of distortion can be individually quantified using a superposition method. The new model is implemented entirely using symbolically defined devices (SDD) for each nonlinear parameter individually. The transistor used is a foundry 180nm RF CMOS transistor capable of operating up to 10GHz. The SDD model is validated by examining the nonlinear behavior of the model against the behavior of the modeled transistor in a one tone sweep test from very small powers up to beyond compression. This work was carried out using Agilent design systems tool (ADS).
这项工作报告了一种新的晶体管模型的实现,旨在更深入地了解工作在高频下的硅CMOS晶体管中的非线性元素。使用该模型,可以使用叠加方法单独量化每个失真源的贡献。新模型完全使用符号定义器件(SDD)对每个非线性参数单独实现。所使用的晶体管是一个可工作频率高达10GHz的180nm RF CMOS晶体管。通过检查模型的非线性行为和模型晶体管在从非常小的功率到超过压缩的单音扫描测试中的行为来验证SDD模型。这项工作是使用安捷伦设计系统工具(ADS)进行的。
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引用次数: 2
期刊
2006 Asia-Pacific Microwave Conference
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