Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429792
Liang Han, K. Wu, W. Hong, Lin Li, Xiaoping Chen
In this paper, the short-open calibration (SOC) technique, which was originally proposed, developed and self-contained in a research-oriented full-wave method of moments (MoM) simulator, is imbedded for the first time in a commercial simulator for the modeling and parameter extraction of planar integrated circuits and discontinuities. The SOC technique requires only two standards, namely short and open standards, which can be easily realized in commercial MoM simulators. By removing inherent numerical noise and errors, accurate equivalent circuit model of the circuits can be extracted and developed. Two examples are presented to verify the effectiveness of the proposed method in conjunction with a commercial package of choice.
{"title":"Embedding of short-open calibration technique in commercial MoM simulators for parameter extraction of planar integrated circuits","authors":"Liang Han, K. Wu, W. Hong, Lin Li, Xiaoping Chen","doi":"10.1109/APMC.2006.4429792","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429792","url":null,"abstract":"In this paper, the short-open calibration (SOC) technique, which was originally proposed, developed and self-contained in a research-oriented full-wave method of moments (MoM) simulator, is imbedded for the first time in a commercial simulator for the modeling and parameter extraction of planar integrated circuits and discontinuities. The SOC technique requires only two standards, namely short and open standards, which can be easily realized in commercial MoM simulators. By removing inherent numerical noise and errors, accurate equivalent circuit model of the circuits can be extracted and developed. Two examples are presented to verify the effectiveness of the proposed method in conjunction with a commercial package of choice.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124021509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429623
A. Mohan, A. Biswas
This paper introduces new compact defected ground structure (DGS). The equivalent circuit parameters have been extracted using circuit analysis. The proposed DGS has smallest rectangular occupying area and it is 15.3% more compact than the previously reported structure in the literature. A novel low pass filter has been designed using the etched radial slot and the proposed DGS. The LPF have sharp rejection in the stop band.
{"title":"A novel compact defected ground structure (DGS) low pass filter","authors":"A. Mohan, A. Biswas","doi":"10.1109/APMC.2006.4429623","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429623","url":null,"abstract":"This paper introduces new compact defected ground structure (DGS). The equivalent circuit parameters have been extracted using circuit analysis. The proposed DGS has smallest rectangular occupying area and it is 15.3% more compact than the previously reported structure in the literature. A novel low pass filter has been designed using the etched radial slot and the proposed DGS. The LPF have sharp rejection in the stop band.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125902011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429541
A. Freundorfer, M. Bekheit, Y. Antar
Surface wave launchers have been used to feed leaky wave antennae. We present here for the first time measured results of a two element CPW-fed surface wave launcher array. It was shown at 22 GHz that this array can beam steer the surface wave 40deg. Array fabrication, measurement set-up and signal processing will also be described in the paper.
{"title":"Measurements of a compact surface wave launcher array with application to single frequency beam steering leaky wave antennas","authors":"A. Freundorfer, M. Bekheit, Y. Antar","doi":"10.1109/APMC.2006.4429541","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429541","url":null,"abstract":"Surface wave launchers have been used to feed leaky wave antennae. We present here for the first time measured results of a two element CPW-fed surface wave launcher array. It was shown at 22 GHz that this array can beam steer the surface wave 40deg. Array fabrication, measurement set-up and signal processing will also be described in the paper.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125041352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429444
H. Barnes, J. Moreira, H. Ossoinig, M. Wollitzer, T. Schmid, Ming Tsai
I/O cells operating up to 10 Gb/s, are now becoming standard blocks in complex integrated circuits (ICs). Integration of these multiple I/O cells in conjunction with other cores (e.g. mixed-signal) and higher power requirements has increased the pin count for some devices to above one thousand pins. This presents tough challenges for the automated test equipment (ATE) industry, in terms of developing solutions to address the data rate and routing density. This paper demonstrates a novel approach for designing a high density Pogo pin transition to a multilayer planar PCB structure that achieves not only the required 10 Gb/s performance but also maintains the necessary density, and cost requirements that are inherent to an ATE solution.
{"title":"Development of a pogo pin assembly and via design for multi-gigabit interfaces on automated test equipment","authors":"H. Barnes, J. Moreira, H. Ossoinig, M. Wollitzer, T. Schmid, Ming Tsai","doi":"10.1109/APMC.2006.4429444","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429444","url":null,"abstract":"I/O cells operating up to 10 Gb/s, are now becoming standard blocks in complex integrated circuits (ICs). Integration of these multiple I/O cells in conjunction with other cores (e.g. mixed-signal) and higher power requirements has increased the pin count for some devices to above one thousand pins. This presents tough challenges for the automated test equipment (ATE) industry, in terms of developing solutions to address the data rate and routing density. This paper demonstrates a novel approach for designing a high density Pogo pin transition to a multilayer planar PCB structure that achieves not only the required 10 Gb/s performance but also maintains the necessary density, and cost requirements that are inherent to an ATE solution.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128498651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429458
S. Azam, R. Jonsson, Q. Wahab
This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral epitaxy MESFET. Typical results at 50 V drain bias for the whole band are, around 22 dB power gain, around 43 dBm output power, minimum power added efficiency at P1 dB is 47% at 200 MHz and maximum 60% at 500 MHz and the IMD3 level at 10 dB back-off from P1 dB is below -45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66% PAE.
{"title":"Single-stage, high efficiency, 26-watt power amplifier using SiC LE-MESFET","authors":"S. Azam, R. Jonsson, Q. Wahab","doi":"10.1109/APMC.2006.4429458","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429458","url":null,"abstract":"This paper describes a single-stage 26 W negative feedback power amplifier, covering the frequency range 200-500 MHz using a 6 mm gate width SiC lateral epitaxy MESFET. Typical results at 50 V drain bias for the whole band are, around 22 dB power gain, around 43 dBm output power, minimum power added efficiency at P1 dB is 47% at 200 MHz and maximum 60% at 500 MHz and the IMD3 level at 10 dB back-off from P1 dB is below -45 dBc. The results at 60 V drain bias at 500 MHz are, 24.9 dB power gain, 44.15 dBm output power (26 W) and 66% PAE.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129311360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429579
Yi-Hsien Cho, F. Chang, Ming-Fong Lei, Ming-Da Tsai, Hong-Yeh Chang, Huei Wang
This paper proposes a quadrature voltage-controlled oscillator (QVCO) using 0.18-mum 1P6M standard CMOS process. The QVCO is realized by combining two differential oscillators via the bulk terminals. Using this approach, we can reduce the power dissipation and remove the noise from the additional coupling transistors compared with conventional QVCOs. To improve the phase noise, the oscillator is composed of Colpitts topology for lower phase noise than its cross-coupled counterpart. Moreover, the Colpitts oscillator adopts only PMOS to achieve a better phase noise performance because PMOS has less 1/f noise than NMOS. The VCO operates from 4.9 to 5.5 GHz with more than 11% tuning range. The measured phase noise at 600-kHz offset is -117 dBc/Hz at 5.2 GHz. The QVCO dissipates 10.8 mW at 1.8 V and achieves a good FOM of 185 dB.
{"title":"A low noise bulk-coupled colpitts CMOS quadrature VCO","authors":"Yi-Hsien Cho, F. Chang, Ming-Fong Lei, Ming-Da Tsai, Hong-Yeh Chang, Huei Wang","doi":"10.1109/APMC.2006.4429579","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429579","url":null,"abstract":"This paper proposes a quadrature voltage-controlled oscillator (QVCO) using 0.18-mum 1P6M standard CMOS process. The QVCO is realized by combining two differential oscillators via the bulk terminals. Using this approach, we can reduce the power dissipation and remove the noise from the additional coupling transistors compared with conventional QVCOs. To improve the phase noise, the oscillator is composed of Colpitts topology for lower phase noise than its cross-coupled counterpart. Moreover, the Colpitts oscillator adopts only PMOS to achieve a better phase noise performance because PMOS has less 1/f noise than NMOS. The VCO operates from 4.9 to 5.5 GHz with more than 11% tuning range. The measured phase noise at 600-kHz offset is -117 dBc/Hz at 5.2 GHz. The QVCO dissipates 10.8 mW at 1.8 V and achieves a good FOM of 185 dB.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127093455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429538
M. Hartmann, K. Seemann, H. Jager, E. Kolmhofer, R. Weigel
A branch-line, rat-race and a reduced-size branch-line coupler have been realized in a modern SiGe:C bipolar technology for application in automotive radar systems at 77 GHz. The paper describes the design methodology of passive circuits on lossy Si-based substrate up to 110 GHz and gives measurement results of the manufactured circuits.
{"title":"Monolithic integration of microstrip line couplers for automotive radar applications at 77 GHz using a Si-HBT technology","authors":"M. Hartmann, K. Seemann, H. Jager, E. Kolmhofer, R. Weigel","doi":"10.1109/APMC.2006.4429538","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429538","url":null,"abstract":"A branch-line, rat-race and a reduced-size branch-line coupler have been realized in a modern SiGe:C bipolar technology for application in automotive radar systems at 77 GHz. The paper describes the design methodology of passive circuits on lossy Si-based substrate up to 110 GHz and gives measurement results of the manufactured circuits.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"198 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127310011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429429
Y. Yu, Y.‐J.E. Chen, D. Heo
This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.
{"title":"An ultra-low voltage UWB CMOS low noise amplifier","authors":"Y. Yu, Y.‐J.E. Chen, D. Heo","doi":"10.1109/APMC.2006.4429429","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429429","url":null,"abstract":"This paper presents an ultra-low voltage UWB LNA in a commercial 0.18mum CMOS technology. The technique of inductive degeneration is used in a two-stage conventional distributed amplifier to achieve broadband and low noise. The common source single-stage amplifier is cascaded to the conventional distributed amplifier to improve the gain at high frequency. The measured gain of the integrated LNA is 10dB with the 3dB bandwidth from 2.7 to 9.1 GHz. The average noise figure is 4.65dB and the IIP3 is OdBm. Operated at 0.6V, the UWB CMOS LNA consumes 7mW.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127326975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429619
Yang Mingshan, D. Xiaoyan, Z. Dewei, Niu Zhongxia
Based on the theory of vibration modal analysis, first 5 natural vibration frequencies and their mode shapes were calculated with ANSYS finite element analysis software. Their stress distributions of some modes, where cracks are formed easily to make microwave equalizer invalidation, were analyzed also. And, the reasons of phase noise, which influence the electric parameter characters of equalizer, induced by random vibration of the equalizer were explained.
{"title":"Vibration modal analysis used finite element method of microwave amplitude equalizer","authors":"Yang Mingshan, D. Xiaoyan, Z. Dewei, Niu Zhongxia","doi":"10.1109/APMC.2006.4429619","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429619","url":null,"abstract":"Based on the theory of vibration modal analysis, first 5 natural vibration frequencies and their mode shapes were calculated with ANSYS finite element analysis software. Their stress distributions of some modes, where cracks are formed easily to make microwave equalizer invalidation, were analyzed also. And, the reasons of phase noise, which influence the electric parameter characters of equalizer, induced by random vibration of the equalizer were explained.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"127 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129918992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2006-12-01DOI: 10.1109/APMC.2006.4429625
D. Jun, Hea Cheon Kim, Hyun-Kyu Yu
This paper proposes a filter with on transmission zero based on a combination of a vertically stacked and a horizontally arranged planar dielectric waveguide with cross coupling and low insertion loss were developed for 60 GHz band applications. The fabricated BPF exhibited one transmission zero at the higher frequency side of the pass band due to the post gap coupled waveguide. At the center operation frequency of 57.7 GHz, the 20 dB bandwidth of the BPF is 1.0 GHz, which is almost 2% of the center operation frequency, and the insertion loss is 1.12 dB. One transmission zero reach approximately 25 dB at 59.0 GHz. Unlike shifted frequency, demanded specifications were satisfied with the measured result.
{"title":"Low loss planar dielectric waveguide filter with cross coupling using LTCC technology at 60GHz band","authors":"D. Jun, Hea Cheon Kim, Hyun-Kyu Yu","doi":"10.1109/APMC.2006.4429625","DOIUrl":"https://doi.org/10.1109/APMC.2006.4429625","url":null,"abstract":"This paper proposes a filter with on transmission zero based on a combination of a vertically stacked and a horizontally arranged planar dielectric waveguide with cross coupling and low insertion loss were developed for 60 GHz band applications. The fabricated BPF exhibited one transmission zero at the higher frequency side of the pass band due to the post gap coupled waveguide. At the center operation frequency of 57.7 GHz, the 20 dB bandwidth of the BPF is 1.0 GHz, which is almost 2% of the center operation frequency, and the insertion loss is 1.12 dB. One transmission zero reach approximately 25 dB at 59.0 GHz. Unlike shifted frequency, demanded specifications were satisfied with the measured result.","PeriodicalId":137931,"journal":{"name":"2006 Asia-Pacific Microwave Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128938387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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