Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270558
Xuanbing Qiu, Gang Li, Jilin Wei, Cao Wei
In the embedded image detection of continuous casting billet defects, the image enhancement of crack is an important criterion in the subsequent recognition. The effect of image enhancement, especially the real-time of image enhancement, decides whether the system can be adopted or not. Based on the dual-core OMAP3530, we set up an embedded real-time online testing hardware device. Taking the system's real-time and the environmental noise of the high-temperature scene into account, the billet image, obtained by the CCD sensor, is simply and effectively enhanced by going through the Laplacian sharpening and the Histogram equalization. Matlab simulation analysis improves the Contrast Improvement Index (CII) of image and cuts down the simulating time; and it provides a powerful precondition for the subsequently billet defects real-time identification by DSP hardware.
{"title":"A Method of Crack Defects Real-Time Image Enhancement in Continuous Casting Billet","authors":"Xuanbing Qiu, Gang Li, Jilin Wei, Cao Wei","doi":"10.1109/SOPO.2012.6270558","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270558","url":null,"abstract":"In the embedded image detection of continuous casting billet defects, the image enhancement of crack is an important criterion in the subsequent recognition. The effect of image enhancement, especially the real-time of image enhancement, decides whether the system can be adopted or not. Based on the dual-core OMAP3530, we set up an embedded real-time online testing hardware device. Taking the system's real-time and the environmental noise of the high-temperature scene into account, the billet image, obtained by the CCD sensor, is simply and effectively enhanced by going through the Laplacian sharpening and the Histogram equalization. Matlab simulation analysis improves the Contrast Improvement Index (CII) of image and cuts down the simulating time; and it provides a powerful precondition for the subsequently billet defects real-time identification by DSP hardware.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"288 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132107689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271119
Xiaochi Chen, Y. Huo, E. Fei, G. Shambat, Xi Liu, T. Kamins, J. Vučković, J. Harris
In this paper, we report the enhanced direct band gap photoluminescence from carrier confinement in Ge quantum wells with SiGe barriers at room temperature. We have also fabricated a microdisk resonator and present the tapered-fiber coupled high-Q cavity mode from Ge quantum wells.
{"title":"Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator","authors":"Xiaochi Chen, Y. Huo, E. Fei, G. Shambat, Xi Liu, T. Kamins, J. Vučković, J. Harris","doi":"10.1109/SOPO.2012.6271119","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271119","url":null,"abstract":"In this paper, we report the enhanced direct band gap photoluminescence from carrier confinement in Ge quantum wells with SiGe barriers at room temperature. We have also fabricated a microdisk resonator and present the tapered-fiber coupled high-Q cavity mode from Ge quantum wells.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134554150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270954
Zhongwen An, Yongjun Zhang, G. Zhou, W. Gu
The CCD (Charge-coupled Device) image sensor with its high resolution is capable of providing high definition image. However, transmission requires high bandwidth, which makes it very difficult to process and transmit in a long distance. The purpose of this paper is to propose a new method to process and transmit CCD image, which can guarantee a low-bandwidth and long-distance data transmission. The innovation is that the transmission content of CCD image data can be flexibly selected and compressed firstly, which will reduce the transmission data. Then it is processed on the base of communication protocol so that it can be fit for wireless transmission. At last, it is transformed into wireless signal and transmitted using 3G technology. As a result, the paper presents a wireless transmission scheme with the rate of 1.5Mbps for CCD image.
{"title":"A New Low-Bandwidth and Wireless Transmission Scheme for CCd Image","authors":"Zhongwen An, Yongjun Zhang, G. Zhou, W. Gu","doi":"10.1109/SOPO.2012.6270954","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270954","url":null,"abstract":"The CCD (Charge-coupled Device) image sensor with its high resolution is capable of providing high definition image. However, transmission requires high bandwidth, which makes it very difficult to process and transmit in a long distance. The purpose of this paper is to propose a new method to process and transmit CCD image, which can guarantee a low-bandwidth and long-distance data transmission. The innovation is that the transmission content of CCD image data can be flexibly selected and compressed firstly, which will reduce the transmission data. Then it is processed on the base of communication protocol so that it can be fit for wireless transmission. At last, it is transformed into wireless signal and transmitted using 3G technology. As a result, the paper presents a wireless transmission scheme with the rate of 1.5Mbps for CCD image.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133556953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270430
Carlos Roberto Mingoto Junior, P. Kurka
A method to calculate the sensibility of a Computer Vision measurement system is presented in this paper. The specific mensuration done is for car wheel inclination. It will be shown that an equipment using cameras and no other clamp or accessory attached to the wheels to help the procedure to obtain angles from the steering suspension alignment by means of the wheel's images is a viable idea, but not, nowadays technologically realizable.
{"title":"Guidelines to Specify a Camera for Computer Vision Measurement of Vehicle Suspension Alignment Angles Based on the Desired Sensibility","authors":"Carlos Roberto Mingoto Junior, P. Kurka","doi":"10.1109/SOPO.2012.6270430","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270430","url":null,"abstract":"A method to calculate the sensibility of a Computer Vision measurement system is presented in this paper. The specific mensuration done is for car wheel inclination. It will be shown that an equipment using cameras and no other clamp or accessory attached to the wheels to help the procedure to obtain angles from the steering suspension alignment by means of the wheel's images is a viable idea, but not, nowadays technologically realizable.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134091683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270426
Zhijun Zhang, Huimin Chen
Linear frequency modulated continuous wave(LFMCW) laser fuze ranging system needs to detect the intermediate frequency (IF) corresponding to the best detonating distance. This paper puts forward a method of Goertzel algorithm applied to the LFMCW laser fuze ranging system. By numerical simulation and comparison with the FFT algorithm we can see that the method applied to the LFMCW laser fuze ranging system can effectively achieves the detection of the difference frequency which contains distance information, and has good characters of real-time detection and easy project realization. The results show that the method applied to LFMCW laser fuze ranging system is reasonable and feasible.
{"title":"Research on Goertzel Algorithm of LFMCW Laser Fuze Ranging","authors":"Zhijun Zhang, Huimin Chen","doi":"10.1109/SOPO.2012.6270426","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270426","url":null,"abstract":"Linear frequency modulated continuous wave(LFMCW) laser fuze ranging system needs to detect the intermediate frequency (IF) corresponding to the best detonating distance. This paper puts forward a method of Goertzel algorithm applied to the LFMCW laser fuze ranging system. By numerical simulation and comparison with the FFT algorithm we can see that the method applied to the LFMCW laser fuze ranging system can effectively achieves the detection of the difference frequency which contains distance information, and has good characters of real-time detection and easy project realization. The results show that the method applied to LFMCW laser fuze ranging system is reasonable and feasible.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115722232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271063
M. Leopardi
A physical model is used to describe one or more field-size phenomena and, in representing them, it generates other quantities, which are the final output of the system. Sometimes the required thorough measurement of such quantities can lead to lose the total perception of the phenomenon under investigation. Digital image processing can not and should not obviously replace the measurements, but it can be a useful tool for capturing the global behaviour of the model-system and consequently of reality. This process can be especially effective in cases where, for certain configurations or for simplifying the model to its essential characteristics, the aim is to seek a simple representation, although not completely corresponding to reality.
{"title":"Simulation and Modelling with Digital Image Processing: Hydraulic Models","authors":"M. Leopardi","doi":"10.1109/SOPO.2012.6271063","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271063","url":null,"abstract":"A physical model is used to describe one or more field-size phenomena and, in representing them, it generates other quantities, which are the final output of the system. Sometimes the required thorough measurement of such quantities can lead to lose the total perception of the phenomenon under investigation. Digital image processing can not and should not obviously replace the measurements, but it can be a useful tool for capturing the global behaviour of the model-system and consequently of reality. This process can be especially effective in cases where, for certain configurations or for simplifying the model to its essential characteristics, the aim is to seek a simple representation, although not completely corresponding to reality.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"636 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124976736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270933
G. Wen, Shuang Wang, Yining Mu, Jingyi He
With the development of the wild Internet of things , Because of the many benefits of laser communications, laser communications network as Internet of things important means of optical networks has become an inevitable trend and urgent demand. This paper designed the 150mm optical main diameter, Laser divergence angle of 1mrad multipoint communication system. Mainly using the splitter splitting and frequency division multiplexing combined, through optical design and frequency shift keying binary method, The purpose is achieve that received the same optical signal of six channels at the same time.The laser communications systems for the internet of things development of a new device.
{"title":"The Optical Communication System of the Wild Internet of Things for One-to-Multi-Points","authors":"G. Wen, Shuang Wang, Yining Mu, Jingyi He","doi":"10.1109/SOPO.2012.6270933","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270933","url":null,"abstract":"With the development of the wild Internet of things , Because of the many benefits of laser communications, laser communications network as Internet of things important means of optical networks has become an inevitable trend and urgent demand. This paper designed the 150mm optical main diameter, Laser divergence angle of 1mrad multipoint communication system. Mainly using the splitter splitting and frequency division multiplexing combined, through optical design and frequency shift keying binary method, The purpose is achieve that received the same optical signal of six channels at the same time.The laser communications systems for the internet of things development of a new device.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134324752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271117
Munho Kim, Jung‐Hun Seo, Hongjun Yang, Jian Shi, Luke J. Mawst, Weidong Zhou, Xudong Wang, Z. Ma
This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5 × 103 was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.
{"title":"Fabrication and Characterization of Si/GaInP Heterojunction Photodetectors","authors":"Munho Kim, Jung‐Hun Seo, Hongjun Yang, Jian Shi, Luke J. Mawst, Weidong Zhou, Xudong Wang, Z. Ma","doi":"10.1109/SOPO.2012.6271117","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271117","url":null,"abstract":"This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5 × 103 was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132006981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6271084
Shoucai Yuan, Qi Zhang, Yamei Liu, Yi Zhang
In order to compare the performance differences of IGBTs/VDMOSFETs based on wide bandgap material 4H-SiC and silicon(Si), the basic theory of semiconductor physics for 4H-SiC and Si was used to describe the quantitative relationship of carrier mobility with doping concentration, output I-V curves with devices design and fabrication parameters, switching characteristics with material properties and devices rating voltage. MATLAB software was used to calculate those above characteristics, the calculation results show that, for given doping concentration, the carrier mobility of 4H-SiC is lower than that of silicon, so its conducting output currents are also smaller than that of silicon in the same design rule of same chip area and same devices terminal bias conditions, for example, when 4H-SiC and Si with same doping concentration of 1015cm-3 and same bias conditions of gate-source voltage 18V/drain-source voltage 2V, the carrier mobility and conducting current are 990.9cm2/V/s and 6.686mA for 4H-SiC, which is only about 74.4% and 55.9% that of silicon with value of 1332.0cm2/V/s and 11.950mA, respectively. However, for devices breakdown voltage of 4000V, the turn-on time for 4H-SiC, 27.88ns, is shorter than that of silicon, 110.30ns, this is because the wide bandgap material 4H-SiC will have higher epilayer doping concentration and thinner epilayer thickness when compared with silicon for given devices blocking voltage, this will lead the more fast turn-on and switching characteristics of 4H-SiC devices than that of Si devices.
{"title":"4H-SiC and Si Based IGBTs/VDMOSFETs Characters Comparison","authors":"Shoucai Yuan, Qi Zhang, Yamei Liu, Yi Zhang","doi":"10.1109/SOPO.2012.6271084","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6271084","url":null,"abstract":"In order to compare the performance differences of IGBTs/VDMOSFETs based on wide bandgap material 4H-SiC and silicon(Si), the basic theory of semiconductor physics for 4H-SiC and Si was used to describe the quantitative relationship of carrier mobility with doping concentration, output I-V curves with devices design and fabrication parameters, switching characteristics with material properties and devices rating voltage. MATLAB software was used to calculate those above characteristics, the calculation results show that, for given doping concentration, the carrier mobility of 4H-SiC is lower than that of silicon, so its conducting output currents are also smaller than that of silicon in the same design rule of same chip area and same devices terminal bias conditions, for example, when 4H-SiC and Si with same doping concentration of 1015cm-3 and same bias conditions of gate-source voltage 18V/drain-source voltage 2V, the carrier mobility and conducting current are 990.9cm2/V/s and 6.686mA for 4H-SiC, which is only about 74.4% and 55.9% that of silicon with value of 1332.0cm2/V/s and 11.950mA, respectively. However, for devices breakdown voltage of 4000V, the turn-on time for 4H-SiC, 27.88ns, is shorter than that of silicon, 110.30ns, this is because the wide bandgap material 4H-SiC will have higher epilayer doping concentration and thinner epilayer thickness when compared with silicon for given devices blocking voltage, this will lead the more fast turn-on and switching characteristics of 4H-SiC devices than that of Si devices.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133870878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-05-21DOI: 10.1109/SOPO.2012.6270510
Wei Yu, Shengpeng Wan, B. Li, Lin Zhong, Wengang Hu, Wei Wang
Compare LM algorithm in reference to the iteration because of slow convergence speed,low convergence precision,poor stability,easy to get bad data influence each other about the Weighted Least Squares. This paper introduces the LM algorithm of based on Weighted Least Squares. The algorithm is applied to Brillouin scattering spectra information processing. The LM algorithm is the improvement algorithm of the Weighted Least Squares.This paper expounds the principle of Weighted Least Squares and LM algorithm . That introduces the LM algorithm of parameters adjustment method and its convergence judgement basis . Finally,the paper gives corresponding simulation results and analysis according to the examples . The LM algorithm has better convergence and stability comparing with the traditional Weighted Least Squares. The LM algorithm has rapid convergence and higher precision and saves time for measurement influence Brillouin scattering parameters.
{"title":"The LM Algorithm Research in Brillouin Scattering Spectra Information Based on the Weighted Least Squares","authors":"Wei Yu, Shengpeng Wan, B. Li, Lin Zhong, Wengang Hu, Wei Wang","doi":"10.1109/SOPO.2012.6270510","DOIUrl":"https://doi.org/10.1109/SOPO.2012.6270510","url":null,"abstract":"Compare LM algorithm in reference to the iteration because of slow convergence speed,low convergence precision,poor stability,easy to get bad data influence each other about the Weighted Least Squares. This paper introduces the LM algorithm of based on Weighted Least Squares. The algorithm is applied to Brillouin scattering spectra information processing. The LM algorithm is the improvement algorithm of the Weighted Least Squares.This paper expounds the principle of Weighted Least Squares and LM algorithm . That introduces the LM algorithm of parameters adjustment method and its convergence judgement basis . Finally,the paper gives corresponding simulation results and analysis according to the examples . The LM algorithm has better convergence and stability comparing with the traditional Weighted Least Squares. The LM algorithm has rapid convergence and higher precision and saves time for measurement influence Brillouin scattering parameters.","PeriodicalId":159850,"journal":{"name":"2012 Symposium on Photonics and Optoelectronics","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133016062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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