Pub Date : 2015-09-01DOI: 10.1109/IWCE.2015.7301989
L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov
In this work we propose an advanced electrothermal simulation methodology for nanoscale devices based on a macroscopic model for acoustic and optical phonon energy transfer. This is coupled with the Poisson equation and Current Continuity Equations (CCE) and solved self-consistently. This has been implemented in the GSS `atomistic' simulator GARAND, and the coupled 3D electro-thermal simulation using this methodology is demonstrated on an SOI FinFET example.
{"title":"An advanced electro-thermal simulation methodology for nanoscale device","authors":"L. Wang, T. Sadi, M. Nedjalkov, A. Brown, C. Alexander, B. Cheng, C. Millar, A. Asenov","doi":"10.1109/IWCE.2015.7301989","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301989","url":null,"abstract":"In this work we propose an advanced electrothermal simulation methodology for nanoscale devices based on a macroscopic model for acoustic and optical phonon energy transfer. This is coupled with the Poisson equation and Current Continuity Equations (CCE) and solved self-consistently. This has been implemented in the GSS `atomistic' simulator GARAND, and the coupled 3D electro-thermal simulation using this methodology is demonstrated on an SOI FinFET example.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114165554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-09-01DOI: 10.1109/IWCE.2015.7301988
D. Verreck, M. V. D. Put, A. Verhulst, B. Sorée, Wim Magnus, A. Dabral, Aaron Thean, Guido Groeseneken
A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero- TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism.
{"title":"15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors","authors":"D. Verreck, M. V. D. Put, A. Verhulst, B. Sorée, Wim Magnus, A. Dabral, Aaron Thean, Guido Groeseneken","doi":"10.1109/IWCE.2015.7301988","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301988","url":null,"abstract":"A carefully chosen heterostructure can significantly boost the performance of tunnel field-effect transistors (TFET). Modelling of these hetero- TFETs requires a quantum mechanical (QM) approach with an accurate band structure to allow for a correct description of band-to-band-tunneling. We have therefore developed a fully QM 2D solver, combining for the first time a full zone 15-band envelope function formalism with a spectral approach, including a heterostructure basis set transformation. Simulations of GaSb/InAs broken gap TFETs illustrate the wide body capabilities and transparant transmission analysis of the formalism.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126501090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-09-01DOI: 10.1109/IWCE.2015.7301986
M. Thesberg, M. Pourfath, H. Kosina, N. Neophytou
InIn this work, we use the Non-Equilibrium Greens Function (NEGF) method to illustrate the design details under which improvements in σS2 can be achieved by energy filtering. We further demonstrate that variation of the design parameters, and most importantly in the barrier heights is a strong detrimental mechanism which can take away most of the energy filtering benefits.
{"title":"Thermoelectric power factor optimization in nanocomposites by energy filtering using NEGF","authors":"M. Thesberg, M. Pourfath, H. Kosina, N. Neophytou","doi":"10.1109/IWCE.2015.7301986","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301986","url":null,"abstract":"InIn this work, we use the Non-Equilibrium Greens Function (NEGF) method to illustrate the design details under which improvements in σS2 can be achieved by energy filtering. We further demonstrate that variation of the design parameters, and most importantly in the barrier heights is a strong detrimental mechanism which can take away most of the energy filtering benefits.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121822114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-06-12DOI: 10.1109/IWCE.2015.7301983
Q. Shi, Hong Guo, Yin Wang, Eric Zhu, Leo Liu
Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.
{"title":"Analyzing variability in short-channel quantum transport from atomistic first principles","authors":"Q. Shi, Hong Guo, Yin Wang, Eric Zhu, Leo Liu","doi":"10.1109/IWCE.2015.7301983","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301983","url":null,"abstract":"Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116024863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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