Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301935
M. Z. Rashid, S. Sundaresan, T. Jayasekera, S. Ahmed
Accurate modeling of non-equilibrium heat transport in nanostructures demands an appropriate description of phonon dispersion relation and proper treatment of various anharmonic effects. In this work, we develop and employ a coupled VFF molecular mechanics-Monte Carlo (VFF-MC) platform to solve the phonon Boltzmann Transport Equation (BTE) for modeling thermal conductivity in nanostructures having specified geometry.
{"title":"VFF-Monte Carlo framework for phonon transport in nanostructures","authors":"M. Z. Rashid, S. Sundaresan, T. Jayasekera, S. Ahmed","doi":"10.1109/IWCE.2015.7301935","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301935","url":null,"abstract":"Accurate modeling of non-equilibrium heat transport in nanostructures demands an appropriate description of phonon dispersion relation and proper treatment of various anharmonic effects. In this work, we develop and employ a coupled VFF molecular mechanics-Monte Carlo (VFF-MC) platform to solve the phonon Boltzmann Transport Equation (BTE) for modeling thermal conductivity in nanostructures having specified geometry.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128944927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301937
K. Khair, S. Ahmed
In this work, we calculate the scattering rates in monolayer MoS2 due to various a) intrinsic phonon, b) remote phonon, and c) remote Coulomb processes. We then study the electron transport in a monolayer MoS2 based FET device employing a particle based Monte Carlo device simulator. Our results show that the total scattering rate is strongly dominated by remote coulomb scattering, which, when compared to the ballistic regime, degrades the drain current by ~78%.
{"title":"Dissipative transport in monolayer MoS2: role of remote coulomb scattering","authors":"K. Khair, S. Ahmed","doi":"10.1109/IWCE.2015.7301937","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301937","url":null,"abstract":"In this work, we calculate the scattering rates in monolayer MoS2 due to various a) intrinsic phonon, b) remote phonon, and c) remote Coulomb processes. We then study the electron transport in a monolayer MoS2 based FET device employing a particle based Monte Carlo device simulator. Our results show that the total scattering rate is strongly dominated by remote coulomb scattering, which, when compared to the ballistic regime, degrades the drain current by ~78%.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131255406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301955
P. Ellinghaus, M. Nedjalkov, S. Selberherr
The Wigner Monte Carlo solver, using the signed-particle method, is based on the generation and annihilation of numerical particles. The memory demands of the annihilation algorithm can become exorbitant, if a high spatial resolution is used, because the entire discretized phase space is represented in memory. Two alternative algorithms, which greatly reduce the memory requirements, are presented here.
{"title":"Memory-efficient particle annihilation algorithm for Wigner Monte Carlo simulations","authors":"P. Ellinghaus, M. Nedjalkov, S. Selberherr","doi":"10.1109/IWCE.2015.7301955","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301955","url":null,"abstract":"The Wigner Monte Carlo solver, using the signed-particle method, is based on the generation and annihilation of numerical particles. The memory demands of the annihilation algorithm can become exorbitant, if a high spatial resolution is used, because the entire discretized phase space is represented in memory. Two alternative algorithms, which greatly reduce the memory requirements, are presented here.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129425784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301964
C. Huang, M. Stroscio
Comparison between simulation and measurement of Current-Voltage curves for CdS cylinders embedded in P3HT. Using interface recombination makes the curve of simulation to match the curve of measurement.
P3HT嵌入式CdS圆柱电流-电压曲线的仿真与实测比较。通过界面重组，使仿真曲线与测量曲线相匹配。
{"title":"I-V curves for cylinders embedded in P3HT","authors":"C. Huang, M. Stroscio","doi":"10.1109/IWCE.2015.7301964","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301964","url":null,"abstract":"Comparison between simulation and measurement of Current-Voltage curves for CdS cylinders embedded in P3HT. Using interface recombination makes the curve of simulation to match the curve of measurement.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114781883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301938
S. Berrada, M. Bescond, N. Cavassilas, L. Raymond, M. Lannoo
This work investigates the influence of discrete dopant positions and lead geometry on the contact resistance in ultrascaled nanowire field effect transistors (NWFET). We use Green's function approach self-consistently coupled with Poissons equation to show that impurity levels play an important role in current transmission from the highly doped regions to the channel of realistic NWFETs. We find that the best ON-state current is obtained when the impurities are placed in the narrow regions close to channel entrance, and that the closer is the impurities to the Si/SiO2 interfaces the better is the ON-state current. This could be attributed to the dielectric confinement occuring in narrow nanowires. These results show that careful control of both shape and dopant positions is needed to optimize contact resistance and can be of a great interest to NWFET designers to boost the performance of the forthcoming device generations.
{"title":"The impact of lead geometry and discrete doping on NWFET operation","authors":"S. Berrada, M. Bescond, N. Cavassilas, L. Raymond, M. Lannoo","doi":"10.1109/IWCE.2015.7301938","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301938","url":null,"abstract":"This work investigates the influence of discrete dopant positions and lead geometry on the contact resistance in ultrascaled nanowire field effect transistors (NWFET). We use Green's function approach self-consistently coupled with Poissons equation to show that impurity levels play an important role in current transmission from the highly doped regions to the channel of realistic NWFETs. We find that the best ON-state current is obtained when the impurities are placed in the narrow regions close to channel entrance, and that the closer is the impurities to the Si/SiO2 interfaces the better is the ON-state current. This could be attributed to the dielectric confinement occuring in narrow nanowires. These results show that careful control of both shape and dopant positions is needed to optimize contact resistance and can be of a great interest to NWFET designers to boost the performance of the forthcoming device generations.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115316584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301990
L. Yin, M. Fang, L. Zeng, Lilun Zhang, G. Du, Xiaoyan Liu
We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ensemble Monte Carlo simulator. We put Quantum Correction part onto MIC and others are still processed on CPU. We compare results between this newly developed MIC+CPU mode and traditional all-on-CPU mode in three different situations. We find that MIC co-processors are suitable for 3D MC simulation with large grid number and large-number computing nodes.
{"title":"Accelerated 3D full band self-consistent ensemble Monte Carlo device simulation utilizing intel MIC co-processors on tianhe II","authors":"L. Yin, M. Fang, L. Zeng, Lilun Zhang, G. Du, Xiaoyan Liu","doi":"10.1109/IWCE.2015.7301990","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301990","url":null,"abstract":"We use Intel Xeon Phi Many Integrated Core (MIC) to accelerate our 3D full band self-consistent ensemble Monte Carlo simulator. We put Quantum Correction part onto MIC and others are still processed on CPU. We compare results between this newly developed MIC+CPU mode and traditional all-on-CPU mode in three different situations. We find that MIC co-processors are suitable for 3D MC simulation with large grid number and large-number computing nodes.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"127 34-35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124474226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301944
M. Choi, M. Dutta, M. Stroscio
Plasmonics has attracted many researchers by its enourmous possibilities. However, the plasmonic materials of interest are mostly precious metals such as gold and silver. In this work, plasmonic properties of various sized non-precious metallic nanodisks are studied. Our calculations show that the non-precious metals examined here exhibit the same red-shifting pattern as the diameter increases. While the Ag nanodisk shows the highest scattering cross section (SCS) in the ultraviolet range, the SCS patterns of Al, Ni, and Cu nanodisks are high throughout the visible region. The amplitudes of the normalized SCS of the Al, Ni, and Cu nanodisks are comparable with the Ag nanodisk in the visible region. These results suggest the cost effective replacement of precious metals in application of plasmonics-based optics.
{"title":"Plasmonics effects of non-precious metallic nanodisks","authors":"M. Choi, M. Dutta, M. Stroscio","doi":"10.1109/IWCE.2015.7301944","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301944","url":null,"abstract":"Plasmonics has attracted many researchers by its enourmous possibilities. However, the plasmonic materials of interest are mostly precious metals such as gold and silver. In this work, plasmonic properties of various sized non-precious metallic nanodisks are studied. Our calculations show that the non-precious metals examined here exhibit the same red-shifting pattern as the diameter increases. While the Ag nanodisk shows the highest scattering cross section (SCS) in the ultraviolet range, the SCS patterns of Al, Ni, and Cu nanodisks are high throughout the visible region. The amplitudes of the normalized SCS of the Al, Ni, and Cu nanodisks are comparable with the Ag nanodisk in the visible region. These results suggest the cost effective replacement of precious metals in application of plasmonics-based optics.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122090611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301982
Prasad Sarangapani, Daniel F. Mejia, J. Charles, W. Gilbertson, H. Ilatikhameneh, T. Ameen, Andrew Roche, J. Fonseca, Gerhard Klimeck
An online platform for simulating quantum dots has been shown. The tool has been deployed on nanoHUB and can simulate quantum dots with varying degrees of complexity acting as a research and learning tool for the scientific community. The tool will include ability to simulate random alloys and ability to import disordered structures and calculate energy levels for such disordered systems in the future.
{"title":"Quantum dot lab: an online platform for quantum dot simulations","authors":"Prasad Sarangapani, Daniel F. Mejia, J. Charles, W. Gilbertson, H. Ilatikhameneh, T. Ameen, Andrew Roche, J. Fonseca, Gerhard Klimeck","doi":"10.1109/IWCE.2015.7301982","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301982","url":null,"abstract":"An online platform for simulating quantum dots has been shown. The tool has been deployed on nanoHUB and can simulate quantum dots with varying degrees of complexity acting as a research and learning tool for the scientific community. The tool will include ability to simulate random alloys and ability to import disordered structures and calculate energy levels for such disordered systems in the future.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115562084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301961
J. Ghosh, V. Sverdlov, S. Selberherr
The electron spin properties are promising for future spin-driven devices. In contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation in ultra-thin silicon films in the presence of strain are investigated. The application of an uniaxial stress can lift the degeneracy between the remaining two valleys in a (001) silicon film. The [001] equivalent valley coupling through the Γ-point, which results in a subband splitting in a confined relaxed electron structure, is properly included. Its impact on the shear strain inflicted equivalent subband splitting is evaluated, and thereby the dependence of spin lifetime on the valley splitting is predicted. In all possible conditions, the spin lifetime is observed to be boosted by several orders of magnitude.
{"title":"Influence of valley splitting on spin relaxation time in a strained thin silicon film","authors":"J. Ghosh, V. Sverdlov, S. Selberherr","doi":"10.1109/IWCE.2015.7301961","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301961","url":null,"abstract":"The electron spin properties are promising for future spin-driven devices. In contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. Silicon, the major material of microelectronics, also appears to be a perfect material for spintronic applications. The peculiarities of the subband structure and details of the spin propagation in ultra-thin silicon films in the presence of strain are investigated. The application of an uniaxial stress can lift the degeneracy between the remaining two valleys in a (001) silicon film. The [001] equivalent valley coupling through the Γ-point, which results in a subband splitting in a confined relaxed electron structure, is properly included. Its impact on the shear strain inflicted equivalent subband splitting is evaluated, and thereby the dependence of spin lifetime on the valley splitting is predicted. In all possible conditions, the spin lifetime is observed to be boosted by several orders of magnitude.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130280441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-26DOI: 10.1109/IWCE.2015.7301970
Ming-Yi Lee, Yi-Chia Tsai, Yiming Li, S. Samukawa
In this work, an efficient method is proposed to calculate the miniband structure and density of states for well-ordered Ge/Si-nanodisk array. Within the envelop-function framework, our approach surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and provides a guideline for three-dimensional quantum dots design by simulating the effect of the interdot space on miniband structure.
{"title":"Electronic structure dependence on the density, size and shape of Ge/Si quantum dots array","authors":"Ming-Yi Lee, Yi-Chia Tsai, Yiming Li, S. Samukawa","doi":"10.1109/IWCE.2015.7301970","DOIUrl":"https://doi.org/10.1109/IWCE.2015.7301970","url":null,"abstract":"In this work, an efficient method is proposed to calculate the miniband structure and density of states for well-ordered Ge/Si-nanodisk array. Within the envelop-function framework, our approach surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and provides a guideline for three-dimensional quantum dots design by simulating the effect of the interdot space on miniband structure.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125471082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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