Pub Date : 2020-01-01DOI: 10.21272/jnep.12(3).03008
F. Ptashchenko
Based on quantum-chemical calculations by the density functional theory (DFT) method, four possible mechanisms of the influence of ammonia vapors on the conductivity of silicon nanostructures, in particular, porous silicon (PS), were examined. The first mechanism involves the emergence of donor states in the interaction of NH3 molecules with pb-centers (surface Si atoms with dangling bonds). The change in conductivity by the second and third mechanisms can occur in p-type silicon structures. The second mechanism involves the protonation of an ammonia molecule with the subsequent passivation of subsurface impurity boron atoms by NH4 ions. The third mechanism combines the first two. At the first stage, it involves the interaction of NH3 molecules with passivated B-pb-center pairs. After protonation of the NH3 molecule, the boron impurity atom is already passivated by the NH4 ion, and the paramagnetic state of the pb-center is restored. At the second stage, the formation of donor states occurs during the interaction of NH3 molecules with already paramagnetic pb-centers. The processes according to the fourth mechanism can occur in n-type silicon structures. It provides for the restoration of donor properties of surface phosphorus atoms passivated by two hydrogen atoms. Such a restoration occurs after protonation of the NH3 molecule, when the proton (the ion of the surface hydrogen atom) is separated from the phosphorus atom. The last three models involve the protonation of NH3 molecules with the necessary participation of water molecules and surface OHgroups, the important role of which has been demonstrated in most experimental studies.
{"title":"Mechanisms of Changing the Conductivity of Porous Silicon in an Ammonia Atmosphere – DFT Modeling","authors":"F. Ptashchenko","doi":"10.21272/jnep.12(3).03008","DOIUrl":"https://doi.org/10.21272/jnep.12(3).03008","url":null,"abstract":"Based on quantum-chemical calculations by the density functional theory (DFT) method, four possible mechanisms of the influence of ammonia vapors on the conductivity of silicon nanostructures, in particular, porous silicon (PS), were examined. The first mechanism involves the emergence of donor states in the interaction of NH3 molecules with pb-centers (surface Si atoms with dangling bonds). The change in conductivity by the second and third mechanisms can occur in p-type silicon structures. The second mechanism involves the protonation of an ammonia molecule with the subsequent passivation of subsurface impurity boron atoms by NH4 ions. The third mechanism combines the first two. At the first stage, it involves the interaction of NH3 molecules with passivated B-pb-center pairs. After protonation of the NH3 molecule, the boron impurity atom is already passivated by the NH4 ion, and the paramagnetic state of the pb-center is restored. At the second stage, the formation of donor states occurs during the interaction of NH3 molecules with already paramagnetic pb-centers. The processes according to the fourth mechanism can occur in n-type silicon structures. It provides for the restoration of donor properties of surface phosphorus atoms passivated by two hydrogen atoms. Such a restoration occurs after protonation of the NH3 molecule, when the proton (the ion of the surface hydrogen atom) is separated from the phosphorus atom. The last three models involve the protonation of NH3 molecules with the necessary participation of water molecules and surface OHgroups, the important role of which has been demonstrated in most experimental studies.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"114 1","pages":"03008-1-03008-7"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73296070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05032
M. Karimov, U. Kutliev, K. Otabaeva, M. U. Otabaev
{"title":"Angular Distributions of Scattered Ne and Ar Ions at the Grazing Incidence on the InGaP (001) 110 Surface","authors":"M. Karimov, U. Kutliev, K. Otabaeva, M. U. Otabaev","doi":"10.21272/jnep.12(5).05032","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05032","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"73 1","pages":"05032-1-05032-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73347539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(3).03022
R. Kolodka, Akademik Glushkov Prosp. Kyiv Ukraine, I. Pundyk, I. Dmitruk
{"title":"Study of Coherent Properties of an Exciton in Semiconductor Quantum Dots","authors":"R. Kolodka, Akademik Glushkov Prosp. Kyiv Ukraine, I. Pundyk, I. Dmitruk","doi":"10.21272/jnep.12(3).03022","DOIUrl":"https://doi.org/10.21272/jnep.12(3).03022","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"45 5 1","pages":"03022-1-03022-6"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77473325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05010
T. Ghaitaoui, A. Benatillah
1 Department of Material Sciences, Institute of Science and Technology, University of Ahmed Draia, Adrar, Algeria 2 Laboratory of Energy, Environment and Systems of Information (LEESI), University of Ahmed Draia, Adrar, Algeria 3 Laboratoire de Développement Durable et d'information (LDDI), Faculté des Science et de la Technologie, Université Ahmed Draia, Adrar, Algéria 4 Unité de Recherche en Energies Renouvelables en Milieu Saharien, URERMS, Centre de Développement des Energies Renouvelables, CDER, 01000 Adrar, Algéria
1 Department of Material Sciences Institute of Science and Technology)、Ahmed Draia大学2、Adrar angoisse Laboratory of Energy, Environment and Systems of Information (Ahmed Draia LEESI)、大学、实验室(Adrar阿尔及利亚3 (LDDI)、可持续发展和信息科学与技术学院、大学、Ahmed Draia Adrar Algéria 4单元研究撒哈拉,URERMS环境中可再生能源、可再生能源发展中心。CDER, 01000阿德拉，阿尔及利亚
{"title":"Analysis and Evaluation of Climatic Conditions Effect on Amorphous Silicon PV Module","authors":"T. Ghaitaoui, A. Benatillah","doi":"10.21272/jnep.12(5).05010","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05010","url":null,"abstract":"1 Department of Material Sciences, Institute of Science and Technology, University of Ahmed Draia, Adrar, Algeria 2 Laboratory of Energy, Environment and Systems of Information (LEESI), University of Ahmed Draia, Adrar, Algeria 3 Laboratoire de Développement Durable et d'information (LDDI), Faculté des Science et de la Technologie, Université Ahmed Draia, Adrar, Algéria 4 Unité de Recherche en Energies Renouvelables en Milieu Saharien, URERMS, Centre de Développement des Energies Renouvelables, CDER, 01000 Adrar, Algéria","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"136 1","pages":"05010-1-05010-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77353206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05008
Ashwini Rayar, Sharanappa Chapi
.
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{"title":"The Vision for Polymer Solar Cells is Power Production at Low Cost","authors":"Ashwini Rayar, Sharanappa Chapi","doi":"10.21272/jnep.12(5).05008","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05008","url":null,"abstract":".","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"21 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76280876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(6).06035
F. Brik, A. Labbani, Constantine Algeria Semiconductors
{"title":"Optimization of a Tunable Photonic Crystal Filter for Coarse Wavelength Division Multiplexing","authors":"F. Brik, A. Labbani, Constantine Algeria Semiconductors","doi":"10.21272/jnep.12(6).06035","DOIUrl":"https://doi.org/10.21272/jnep.12(6).06035","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"25 1","pages":"06035-1-06035-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82786209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(6).06007
A. Bandyopadhyay, K. Arun, A. Batra, M. Aggarwal
The sensitivity and performance of an integrated pyroelectric infrared detector depend not only on the material characteristics of a sensor element, but also on the thermal performance of the complete structure of detector design, including associated electronics. Thus, we have derived the thermal transfer function by solving the one-dimensional thermal diffusion equation for a single element n -layer structure, from which the performance of the detector structure of any number of layers can be obtained, predicted and optimized. Various single sensor configurations on the flexible substrate, polyimide, and pyroelectric and thermal parameters of modified lead strontium titanate (PST) film are utilized to predict the current re-sponsivity of an integrated detector system. The results obtained are compared with silicon as a substrate and found to be attractive for the development of a flexible thin-film based detector system
{"title":"Enhanced Performance of an Integrated Pyroelectric Infrared Detector on a Flexible Substrate: Modeling and Simulation","authors":"A. Bandyopadhyay, K. Arun, A. Batra, M. Aggarwal","doi":"10.21272/jnep.12(6).06007","DOIUrl":"https://doi.org/10.21272/jnep.12(6).06007","url":null,"abstract":"The sensitivity and performance of an integrated pyroelectric infrared detector depend not only on the material characteristics of a sensor element, but also on the thermal performance of the complete structure of detector design, including associated electronics. Thus, we have derived the thermal transfer function by solving the one-dimensional thermal diffusion equation for a single element n -layer structure, from which the performance of the detector structure of any number of layers can be obtained, predicted and optimized. Various single sensor configurations on the flexible substrate, polyimide, and pyroelectric and thermal parameters of modified lead strontium titanate (PST) film are utilized to predict the current re-sponsivity of an integrated detector system. The results obtained are compared with silicon as a substrate and found to be attractive for the development of a flexible thin-film based detector system","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"26 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82638703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(3).03023
C. Zegadi, Bp El-Mnaouer Oran Algeria Laboratoire de Micro et de Nanophysique, M. Adnane, D. Chaumont, A. Haichour, A. Kaddour, Z. Lounis, D. Ghaffor
1 Laboratoire de Micro et de Nanophysique (LaMiN), Ecole Nationale Polytechnique d’Oran Maurice AUDIN (ENPO-MA), BP 1523 El-Mnaouer, 31000 Oran, Algeria 2 Laboratory of Electron Microscopy and Materials Sciences, University of Science and Technology of Oran, P.O. Box 1505, El-Mnaouer, 31000 Oran, Algeria 3 Équipe NanoForm, Laboratoire ICB, Université de Bourgogne, 9, Ave Alain Savary, 21078 Dijon, France 4 Laboratory of LABMAT, National Polytechnic School of Oran, ENP OranMaurice AUDIN, Oran, Algeria
{"title":"Effect of Fe-incorporation on Structural and Optoelectronic Properties of Spin Coated p/n Type ZnO Thin Films","authors":"C. Zegadi, Bp El-Mnaouer Oran Algeria Laboratoire de Micro et de Nanophysique, M. Adnane, D. Chaumont, A. Haichour, A. Kaddour, Z. Lounis, D. Ghaffor","doi":"10.21272/jnep.12(3).03023","DOIUrl":"https://doi.org/10.21272/jnep.12(3).03023","url":null,"abstract":"1 Laboratoire de Micro et de Nanophysique (LaMiN), Ecole Nationale Polytechnique d’Oran Maurice AUDIN (ENPO-MA), BP 1523 El-Mnaouer, 31000 Oran, Algeria 2 Laboratory of Electron Microscopy and Materials Sciences, University of Science and Technology of Oran, P.O. Box 1505, El-Mnaouer, 31000 Oran, Algeria 3 Équipe NanoForm, Laboratoire ICB, Université de Bourgogne, 9, Ave Alain Savary, 21078 Dijon, France 4 Laboratory of LABMAT, National Polytechnic School of Oran, ENP OranMaurice AUDIN, Oran, Algeria","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"26 1","pages":"03023-1-03023-6"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81050513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(6).06001
A. Boulgheb, M. Lakhdara, N. Kherief, S. Latreche
The main purpose of this paper is to determine the impact of germanium percentage within the base of a SiGe heterojunction bipolar transistor (HBT) in order to analyze the effect of the device self-heating. We use the COMSOL Multiphysics commercial software. The model links the semiconductor module to the HTS (Heat Transfer in Solids) module. This allows to simulate the temperature distribution across the SiGe HBT device for germanium levels ranging from x 10 %, 20 % to x 30 %. We first determine the static gain () of the SiGe HBT by varying the percentages of germanium. In addition, we analyze the heat distribution on the component surface for the three considered levels of germanium in order to record the maximum temperature Tmax in the device. Indeed, for x 10 %, the maximum temperature is Tmax 377 K and is close to the base-collector junction. When the germanium fraction in the SiGe alloy is increased (x 20 %), the maximum temperature of self-heating decreases (Tmax 366 K), while for x 30 % the temperature of self-heating decreases more (Tmax 354 K) and it spreads over the entire component. This phenomenon degrades seriously the electrical performances of the HBT.
{"title":"Analysis of Self-heating of a SiGe HBT Designed for RF Applications According to the Percentage of Germanium","authors":"A. Boulgheb, M. Lakhdara, N. Kherief, S. Latreche","doi":"10.21272/jnep.12(6).06001","DOIUrl":"https://doi.org/10.21272/jnep.12(6).06001","url":null,"abstract":"The main purpose of this paper is to determine the impact of germanium percentage within the base of a SiGe heterojunction bipolar transistor (HBT) in order to analyze the effect of the device self-heating. We use the COMSOL Multiphysics commercial software. The model links the semiconductor module to the HTS (Heat Transfer in Solids) module. This allows to simulate the temperature distribution across the SiGe HBT device for germanium levels ranging from x 10 %, 20 % to x 30 %. We first determine the static gain () of the SiGe HBT by varying the percentages of germanium. In addition, we analyze the heat distribution on the component surface for the three considered levels of germanium in order to record the maximum temperature Tmax in the device. Indeed, for x 10 %, the maximum temperature is Tmax 377 K and is close to the base-collector junction. When the germanium fraction in the SiGe alloy is increased (x 20 %), the maximum temperature of self-heating decreases (Tmax 366 K), while for x 30 % the temperature of self-heating decreases more (Tmax 354 K) and it spreads over the entire component. This phenomenon degrades seriously the electrical performances of the HBT.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"25 1","pages":"06001-1-06001-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88738882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(1).01006
R. Muminov, G. Ergashev, A. Saymbetov, Yo. K. Toshmurodov, S. Radzhapov, A. Mansurova, N. Japashov, Ye. A. Svanbayev
This paper describes the use of an additional inspection drift to improve the electro physical dimensions of a large-sized Si (Li) p-i-n structure.
本文介绍了使用额外的检测漂移来改善大尺寸Si (Li) p-i-n结构的电物理尺寸。
{"title":"Application of Additional Leveling Drift Process to Improve the Electrophysical Parameters of Large Sized Si (Li) p-i-n Structures","authors":"R. Muminov, G. Ergashev, A. Saymbetov, Yo. K. Toshmurodov, S. Radzhapov, A. Mansurova, N. Japashov, Ye. A. Svanbayev","doi":"10.21272/jnep.12(1).01006","DOIUrl":"https://doi.org/10.21272/jnep.12(1).01006","url":null,"abstract":"This paper describes the use of an additional inspection drift to improve the electro physical dimensions of a large-sized Si (Li) p-i-n structure.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"26 1","pages":"01006-1-01006-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87116027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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