Pub Date : 2020-01-01DOI: 10.21272/jnep.12(1).01011
I. A. Knyaz
The paper describes a non-trivial effect of realization of the electrical transport in a stochastic model of Josephson junction due to correlated colored noises. It is shown that the cross-correlation plays an important role: by controlling the correlation between the thermal and external noises, a reversal for the net voltage can be induced. It is shown that the behavior of the dc voltage versus the dc current can be manipulated by controlling the noise intensities and strength of cross-correlation. At zero dc current the strength of cross-correlations plays a role of control parameter; an increase in this parameter leads to voltage growth. Frequency content of noises is a critical parameter at small noise intensity: a reversal for the voltage can be realized by controlling the autoand cross-correlation times of thermal and external noises. It is found that correlated noises promote the occurrence of negative conductance at small positive values of dc bias. At the same time the voltage does not assume the opposite sign of the dc bias at negative values of one due to cross-correlation between noises. It is shown that an increase in noise strength at a small friction coefficient leads to regimes which correspond to a normal, Ohmic-like transport behavior. The dependence of the voltage versus the amplitude of the ac current at small positive dc bias depicts a quasiperiodic series of windows of noise-induced anomalous regimes: negative conductance appears and disappears as the ac-amplitude strength increases.
{"title":"Influence of Correlated Coloured Noises on an Underdamped Josephson Junction","authors":"I. A. Knyaz","doi":"10.21272/jnep.12(1).01011","DOIUrl":"https://doi.org/10.21272/jnep.12(1).01011","url":null,"abstract":"The paper describes a non-trivial effect of realization of the electrical transport in a stochastic model of Josephson junction due to correlated colored noises. It is shown that the cross-correlation plays an important role: by controlling the correlation between the thermal and external noises, a reversal for the net voltage can be induced. It is shown that the behavior of the dc voltage versus the dc current can be manipulated by controlling the noise intensities and strength of cross-correlation. At zero dc current the strength of cross-correlations plays a role of control parameter; an increase in this parameter leads to voltage growth. Frequency content of noises is a critical parameter at small noise intensity: a reversal for the voltage can be realized by controlling the autoand cross-correlation times of thermal and external noises. It is found that correlated noises promote the occurrence of negative conductance at small positive values of dc bias. At the same time the voltage does not assume the opposite sign of the dc bias at negative values of one due to cross-correlation between noises. It is shown that an increase in noise strength at a small friction coefficient leads to regimes which correspond to a normal, Ohmic-like transport behavior. The dependence of the voltage versus the amplitude of the ac current at small positive dc bias depicts a quasiperiodic series of windows of noise-induced anomalous regimes: negative conductance appears and disappears as the ac-amplitude strength increases.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"25 1","pages":"01011-1-01011-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77662098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(4).04005
V. Borysiuk
{"title":"Simulation of Fracture Dynamics of Two-dimensional Titanium Carbide Ti2C under Different Types of Tensile Loading","authors":"V. Borysiuk","doi":"10.21272/jnep.12(4).04005","DOIUrl":"https://doi.org/10.21272/jnep.12(4).04005","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"58 1","pages":"04005-1-04005-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86119118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05027
P. Vimala, Likith Krishna L, Krishnan Maheshwari, S. Sharma
This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor (CNTFET) which is one of the nanoelectronic devices and a major replacement for Complementary Metal Oxide Semiconductor (CMOS) and MOSFETs, which have a wide range of short channel effects that play a prominent role in their disadvantages and, thus, have made us today to look for a better device. One such device is CNTFET which is better in terms of execution with low power consumption, faster switching speed, high carrier mobility, and very large scale integrated circuits. The channel of this transistor is surrounded by a carbon nanotube, and this paper mainly revolves around the simulation of its current-voltage ( I - V ) characteristics. The efficiency of this device on the whole depends on device parameters that are shown in the simulation of CNTFET, and the geometry of this device has an excellent dominance on carrier transport and permits for superior electrostatics while the gate contact wraps throughout the channel of a carbon nanotube. A carbon nanotube used for coaxial geometry has a zigzag structure and is semiconducting in nature. To ensure the efficient execution of CNTFETs as a vital part of nanoelectronic devices, chirality factor ( n , m ) values play an important role whose effect is shown on drain current. Further, the source/drain doping level variations that affect drain current are inspected. Also, I - V characteristics at different temperature conditions are examined which indirectly gives us an idea of the movement of electrons in this device with respect to change in temperature. Additionally, the analysis is also made to see the effect of nanotube length, coaxial gate voltage and gate thickness on I - V characteristics and also to reveal the impact of high-k materials
{"title":"Investigation of Carbon Nanotube FET with Coaxial Geometry","authors":"P. Vimala, Likith Krishna L, Krishnan Maheshwari, S. Sharma","doi":"10.21272/jnep.12(5).05027","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05027","url":null,"abstract":"This paper aims to study the behavior of a Carbon Nanotube Field Effect Transistor (CNTFET) which is one of the nanoelectronic devices and a major replacement for Complementary Metal Oxide Semiconductor (CMOS) and MOSFETs, which have a wide range of short channel effects that play a prominent role in their disadvantages and, thus, have made us today to look for a better device. One such device is CNTFET which is better in terms of execution with low power consumption, faster switching speed, high carrier mobility, and very large scale integrated circuits. The channel of this transistor is surrounded by a carbon nanotube, and this paper mainly revolves around the simulation of its current-voltage ( I - V ) characteristics. The efficiency of this device on the whole depends on device parameters that are shown in the simulation of CNTFET, and the geometry of this device has an excellent dominance on carrier transport and permits for superior electrostatics while the gate contact wraps throughout the channel of a carbon nanotube. A carbon nanotube used for coaxial geometry has a zigzag structure and is semiconducting in nature. To ensure the efficient execution of CNTFETs as a vital part of nanoelectronic devices, chirality factor ( n , m ) values play an important role whose effect is shown on drain current. Further, the source/drain doping level variations that affect drain current are inspected. Also, I - V characteristics at different temperature conditions are examined which indirectly gives us an idea of the movement of electrons in this device with respect to change in temperature. Additionally, the analysis is also made to see the effect of nanotube length, coaxial gate voltage and gate thickness on I - V characteristics and also to reveal the impact of high-k materials","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"177 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79942818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(1).01004
V. A. Nahornyy, D. Nahornyy, V. Baturin, A. Nahornyy
{"title":"Low-energy Electron Beam Profile Monitor","authors":"V. A. Nahornyy, D. Nahornyy, V. Baturin, A. Nahornyy","doi":"10.21272/jnep.12(1).01004","DOIUrl":"https://doi.org/10.21272/jnep.12(1).01004","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"53 1","pages":"01004-1-01004-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88580623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(2).02030
S. J. Patel, A. Jariwala, C. Panchal, V. Kheraj
{"title":"Suppression of Optical Feedback in Laser Diodes Using Multilayered Broad-band Ultra-low Reflective Facets-coating","authors":"S. J. Patel, A. Jariwala, C. Panchal, V. Kheraj","doi":"10.21272/jnep.12(2).02030","DOIUrl":"https://doi.org/10.21272/jnep.12(2).02030","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"238 1","pages":"02030-1-02030-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77617855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(3).03003
A. Belfar, A. García-Loureiro
In this work, single n-i-p solar cells based on hydrogenated amorphous silicon (a-Si:H) are analyzed using one dimensional AMPS-1D (Analysis of Microelectronic and Photonic Structures) code. Effect of introducing a p-layer based on hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) as a buffer layer at i/p interface instead of i-layer based on hydrogenated amorphous silicon carbide (i-a-SiC:H) is analyzed. It is found that the incorporation of p-nc-SiOx:H buffer layer at i/p interface reduces the band mismatch between i-a-Si:H absorber layer and p-nc-SiOx:H window layer and minimizes the defect density near interface. It is also obtained that the spectral response of the solar cell has improved in the wavelength range from 0.48 to 0.7 m with using p-nc-SiOx:H window/p-nc-SiOx:H buffer dual p-layers. So, an enhancement of the output solar cell performances with using p-nc-SiOx:H buffer layer has obtained. In this case, the short circuit current (Jsc) increases from 10.18 mA/cm2 with i-a-SiC:H buffer layer to 13.44 mA/cm2 with p-nc-SiOx:H buffer layer, the open circuit voltage (VOC) improves from 930 mV to 941 mV and the fill factor (FF) increases from 74.2 % to 76.5 %. As a consequence, the conversion efficiency increases from 7.03 % to 9.67 %.
{"title":"Enhancement of Performance of a-Si:H Solar Cells by Introducing a p-nc-SiOx:H Nanostructure Buffer Layer","authors":"A. Belfar, A. García-Loureiro","doi":"10.21272/jnep.12(3).03003","DOIUrl":"https://doi.org/10.21272/jnep.12(3).03003","url":null,"abstract":"In this work, single n-i-p solar cells based on hydrogenated amorphous silicon (a-Si:H) are analyzed using one dimensional AMPS-1D (Analysis of Microelectronic and Photonic Structures) code. Effect of introducing a p-layer based on hydrogenated nanocrystalline silicon oxide (p-nc-SiOx:H) as a buffer layer at i/p interface instead of i-layer based on hydrogenated amorphous silicon carbide (i-a-SiC:H) is analyzed. It is found that the incorporation of p-nc-SiOx:H buffer layer at i/p interface reduces the band mismatch between i-a-Si:H absorber layer and p-nc-SiOx:H window layer and minimizes the defect density near interface. It is also obtained that the spectral response of the solar cell has improved in the wavelength range from 0.48 to 0.7 m with using p-nc-SiOx:H window/p-nc-SiOx:H buffer dual p-layers. So, an enhancement of the output solar cell performances with using p-nc-SiOx:H buffer layer has obtained. In this case, the short circuit current (Jsc) increases from 10.18 mA/cm2 with i-a-SiC:H buffer layer to 13.44 mA/cm2 with p-nc-SiOx:H buffer layer, the open circuit voltage (VOC) improves from 930 mV to 941 mV and the fill factor (FF) increases from 74.2 % to 76.5 %. As a consequence, the conversion efficiency increases from 7.03 % to 9.67 %.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"4 11","pages":"03003-1-03003-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91422829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05029
N. Hảo, D. H. Tung, N. V. Khien, N. N. Anh, N. V. Tu, P. Trinh
{"title":"Direct Synthesis of Graphene from a Recycled Battery Core by Solution Plasma Exfoliation and its Application for Removing Methylene Blue and Rhodamine B from Aqueous Solutions","authors":"N. Hảo, D. H. Tung, N. V. Khien, N. N. Anh, N. V. Tu, P. Trinh","doi":"10.21272/jnep.12(5).05029","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05029","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"37 1","pages":"05029-1-05029-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88926079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(6).06014
Hemant S. Tarkas, Swapnil R Tak, V. Deo, S. More, Devashri P. Upasani, Sanjay S. Ghosh, J. Sali
Organometallic halide perovskite based solar cells are considered as the foundation of future photovoltaic technology. In these types of solar cells, it has been emphasized that the bulk heterojunction active layer architecture may show superior performance than the bilayer active layer architecture due to the increase in the interfacial area by intermixing both donor and acceptor phases in the bulk heterojunction. Organometallic halide perovskite with suitable acceptor in bulk heterojunction architecture can be a promising active layer in perovskite solar cells. Conventionally, the perovskite and acceptor are mixed together in a single solvent before thin film formation. Though this offers a one-step synthesis way, limited solubility of perovskite and acceptor in single solvent puts major constraint on the formation of bulk heterojunction through one-step solution processable method. This paper describes a new way of one-step synthesis of bulk heterojunction using surfactant free microemulsion in slot die method, which removes the constraint of limited solubility of the two phases in a single solvent. Emulsion of DMSO (solvent for CH3NH3PbI3) and cyclohexane (solvent for PCBM) stabilized with acetone was used for making perovskite:fullerene bulk heterojunction. Solvent evaporation dynamics has been simulated to get deeper understanding of emulsion solidification leading to bulk heterojunction formation. Structural and optical studies support the formation of bulk heterojunction for efficient charge separation at donor:acceptor interfaces. A perovskite solar cell employing this bulk heterojunction has also been reported.
{"title":"A New Approach for One-step Synthesis of Perovskite:fullerene Bulk Heterojunction Using Surfactant Free Microemulsion in Slot Die Method","authors":"Hemant S. Tarkas, Swapnil R Tak, V. Deo, S. More, Devashri P. Upasani, Sanjay S. Ghosh, J. Sali","doi":"10.21272/jnep.12(6).06014","DOIUrl":"https://doi.org/10.21272/jnep.12(6).06014","url":null,"abstract":"Organometallic halide perovskite based solar cells are considered as the foundation of future photovoltaic technology. In these types of solar cells, it has been emphasized that the bulk heterojunction active layer architecture may show superior performance than the bilayer active layer architecture due to the increase in the interfacial area by intermixing both donor and acceptor phases in the bulk heterojunction. Organometallic halide perovskite with suitable acceptor in bulk heterojunction architecture can be a promising active layer in perovskite solar cells. Conventionally, the perovskite and acceptor are mixed together in a single solvent before thin film formation. Though this offers a one-step synthesis way, limited solubility of perovskite and acceptor in single solvent puts major constraint on the formation of bulk heterojunction through one-step solution processable method. This paper describes a new way of one-step synthesis of bulk heterojunction using surfactant free microemulsion in slot die method, which removes the constraint of limited solubility of the two phases in a single solvent. Emulsion of DMSO (solvent for CH3NH3PbI3) and cyclohexane (solvent for PCBM) stabilized with acetone was used for making perovskite:fullerene bulk heterojunction. Solvent evaporation dynamics has been simulated to get deeper understanding of emulsion solidification leading to bulk heterojunction formation. Structural and optical studies support the formation of bulk heterojunction for efficient charge separation at donor:acceptor interfaces. A perovskite solar cell employing this bulk heterojunction has also been reported.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"52 1","pages":"06014-1-06014-7"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90283498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(4).04012
S. Khan, A. Vyas, S. Rajan, S. Jani, R. Brajpuriya
{"title":"Structural Studies of Mechanically Alloyed Fe1–xAlx Powder","authors":"S. Khan, A. Vyas, S. Rajan, S. Jani, R. Brajpuriya","doi":"10.21272/jnep.12(4).04012","DOIUrl":"https://doi.org/10.21272/jnep.12(4).04012","url":null,"abstract":"","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"514 1","pages":"04012-1-04012-5"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85649785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2020-01-01DOI: 10.21272/jnep.12(5).05013
D. Slobodianiuk, V. Ukraine, O. Prokopenko
Magnetization dynamics in a highly nonlinear antiferromagnetic Josephson-like spintronic oscillator under the action of DC and AC signals is studied theoretically and numerically, and the regime of the oscillator synchronization to an external AC signal has been found and investigated. We revealed that the synchronization bandwidth of the oscillator substantially depends not only on the external force amplitude (which is typical), but also on the oscillator nonlinearity. This behavior arises from the highly nonlinear nature of the considered system. Our theoretical and numerical analyses show that the generation frequency of the oscillator depends on the applied electric DC current in a nonlinear way. Thus, the correct choice of the working point characterized by some particular value of the nonlinearity coefficient is important for the considered system to work properly, and it can be used for maximizing the oscillator synchronization bandwidth. Obtained results are important for the further development of antiferromagnetic terahertz-frequency spintronic oscillators and their applications. The developed formalism and numerical simulations can also be used for the description of strongly nonlinear non-isochronous oscillators of any nature.
{"title":"Synchronization of an Antiferromagnetic Josephson-like Oscillator with an External AC Signal","authors":"D. Slobodianiuk, V. Ukraine, O. Prokopenko","doi":"10.21272/jnep.12(5).05013","DOIUrl":"https://doi.org/10.21272/jnep.12(5).05013","url":null,"abstract":"Magnetization dynamics in a highly nonlinear antiferromagnetic Josephson-like spintronic oscillator under the action of DC and AC signals is studied theoretically and numerically, and the regime of the oscillator synchronization to an external AC signal has been found and investigated. We revealed that the synchronization bandwidth of the oscillator substantially depends not only on the external force amplitude (which is typical), but also on the oscillator nonlinearity. This behavior arises from the highly nonlinear nature of the considered system. Our theoretical and numerical analyses show that the generation frequency of the oscillator depends on the applied electric DC current in a nonlinear way. Thus, the correct choice of the working point characterized by some particular value of the nonlinearity coefficient is important for the considered system to work properly, and it can be used for maximizing the oscillator synchronization bandwidth. Obtained results are important for the further development of antiferromagnetic terahertz-frequency spintronic oscillators and their applications. The developed formalism and numerical simulations can also be used for the description of strongly nonlinear non-isochronous oscillators of any nature.","PeriodicalId":16514,"journal":{"name":"Journal of Nano- and Electronic Physics","volume":"23 1","pages":"05013-1-05013-4"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86068672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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