Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931301
A. Pandey
This paper presents the design of a unique multimode extractor and converter of higher order modes of a circular waveguide. The multi-mode extractor couples first five circular waveguide propagation modes TE11, orthogonal TE11(o), TM01, TE21, and TE21(o) that includes the three tracking signals (i.e. sum signal, elevation signal, and azimuth signal) used in a high-frequency monopulse tracking system and two communication channels for transmitting and receiving signal at Ka band. This design is based on amplitude and phase characteristics of the higher-order modes TM01, TE21, and TE21(o) excited in circular waveguide. TE21 and TE21 (o) modes are extracted from circular waveguide to TE10 mode in rectangular waveguide by two longitudinal slots milled in the circular waveguide. TE11 mode is coupled using two coupling slots and H-plane power combiner. A turnstile junction is used to extract TM01 and TE11(o) mode. This multimode tracking system is designed both for linear or circular polarized ground earth station antennas to track orbiting satellites.
{"title":"Design of multimode tracking system for earth station antenna","authors":"A. Pandey","doi":"10.1109/APMC.2016.7931301","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931301","url":null,"abstract":"This paper presents the design of a unique multimode extractor and converter of higher order modes of a circular waveguide. The multi-mode extractor couples first five circular waveguide propagation modes TE11, orthogonal TE11(o), TM01, TE21, and TE21(o) that includes the three tracking signals (i.e. sum signal, elevation signal, and azimuth signal) used in a high-frequency monopulse tracking system and two communication channels for transmitting and receiving signal at Ka band. This design is based on amplitude and phase characteristics of the higher-order modes TM01, TE21, and TE21(o) excited in circular waveguide. TE21 and TE21 (o) modes are extracted from circular waveguide to TE10 mode in rectangular waveguide by two longitudinal slots milled in the circular waveguide. TE11 mode is coupled using two coupling slots and H-plane power combiner. A turnstile junction is used to extract TM01 and TE11(o) mode. This multimode tracking system is designed both for linear or circular polarized ground earth station antennas to track orbiting satellites.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129754743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931269
Joydeb Mandal, M. Mandal
This paper presents a design of broadband phase shifters using a slow-wave microstrip line structure. The slow wave structure is realized by placing periodic circular grounded metal patches below the top layer metal strip. The slow wave structure provides linear phase response over a wide range of frequency which is then utilized to design the broadband phase shifters. A set of graphs are presented to ease the design procedure. The main advantage of the proposed structure is that any phase shift value over the range 0°–360° can be designed. To verify the proposed technique, a prototype 90° differential phase shifter is fabricated for X-band application. The measured reflection loss is more than 22 dB and insertion loss is less than 0.88 dB. Also measured phase deviation is below 8° over the whole band.
{"title":"Wideband differential phase shifters using slow-wave microstrip line structure","authors":"Joydeb Mandal, M. Mandal","doi":"10.1109/APMC.2016.7931269","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931269","url":null,"abstract":"This paper presents a design of broadband phase shifters using a slow-wave microstrip line structure. The slow wave structure is realized by placing periodic circular grounded metal patches below the top layer metal strip. The slow wave structure provides linear phase response over a wide range of frequency which is then utilized to design the broadband phase shifters. A set of graphs are presented to ease the design procedure. The main advantage of the proposed structure is that any phase shift value over the range 0°–360° can be designed. To verify the proposed technique, a prototype 90° differential phase shifter is fabricated for X-band application. The measured reflection loss is more than 22 dB and insertion loss is less than 0.88 dB. Also measured phase deviation is below 8° over the whole band.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129498869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931334
Arani Ali Khan, M. Mandal
In this paper, a dual-band bandpass filter is proposed in substrate integrated waveguide (SIW) technology. A single cavity that supports both TE101 and TE201 resonating modes is used for the design. The two passbands are created by the two modes. To improve the selectivity, one bypass coupling path is introduced which provides additional transmission zero. The procedures to control the passband center frequencies as well as their bandwidths are presented. A prototype narrowband bandpass filter with the center frequencies of two passbands as 10 GHz and 11 GHz is fabricated for space applications. The 3 dB fractional bandwidths are 3% and 1.6%, respectively. The measured insertion losses at the passband center frequencies are 1.4 dB and 2.6 dB, respectively.
{"title":"Dual-band substrate integrated waveguide filter with independently controllable bandwidth","authors":"Arani Ali Khan, M. Mandal","doi":"10.1109/APMC.2016.7931334","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931334","url":null,"abstract":"In this paper, a dual-band bandpass filter is proposed in substrate integrated waveguide (SIW) technology. A single cavity that supports both TE101 and TE201 resonating modes is used for the design. The two passbands are created by the two modes. To improve the selectivity, one bypass coupling path is introduced which provides additional transmission zero. The procedures to control the passband center frequencies as well as their bandwidths are presented. A prototype narrowband bandpass filter with the center frequencies of two passbands as 10 GHz and 11 GHz is fabricated for space applications. The 3 dB fractional bandwidths are 3% and 1.6%, respectively. The measured insertion losses at the passband center frequencies are 1.4 dB and 2.6 dB, respectively.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128855928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931369
R. Allanic, Y. Quéré, D. Le Berre, C. Quendo
This paper deals with a novel approach to co-design a microstrip line associated with a distributed PIN switch in a semiconductor substrate. An High-Resistivity Silicon (HR-Si) substrate was chosen to optimize the trade-off between semiconductor effects and microwave propagation. Indeed, thanks to this particular substrate, the novel co-design concept is illustrated by an integrated and distributed switch based on an N+PP+ junction. This concept offers great flexibility in the design of tunable microwave devices. Moreover, applied to tunable distributed systems (antennas, filters, etc) in planar technology, it makes it possible to avoid the need for reported components or metalized holes. The coupling between semiconductors and microwave devices is taken into account thanks to a new co-design flow. Two demonstrators, with switchable doped microstrip lines, are manufactured and measured to validate the approach. The performances achieved in terms of insertion losses (IL) and isolation (Iso) were lower than 2.8 dB and higher than 40 dB, respectively, over the whole frequency band under consideration (from DC to 20 GHz).
{"title":"A novel approach to co-design microwave devices with distributed switches","authors":"R. Allanic, Y. Quéré, D. Le Berre, C. Quendo","doi":"10.1109/APMC.2016.7931369","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931369","url":null,"abstract":"This paper deals with a novel approach to co-design a microstrip line associated with a distributed PIN switch in a semiconductor substrate. An High-Resistivity Silicon (HR-Si) substrate was chosen to optimize the trade-off between semiconductor effects and microwave propagation. Indeed, thanks to this particular substrate, the novel co-design concept is illustrated by an integrated and distributed switch based on an N+PP+ junction. This concept offers great flexibility in the design of tunable microwave devices. Moreover, applied to tunable distributed systems (antennas, filters, etc) in planar technology, it makes it possible to avoid the need for reported components or metalized holes. The coupling between semiconductors and microwave devices is taken into account thanks to a new co-design flow. Two demonstrators, with switchable doped microstrip lines, are manufactured and measured to validate the approach. The performances achieved in terms of insertion losses (IL) and isolation (Iso) were lower than 2.8 dB and higher than 40 dB, respectively, over the whole frequency band under consideration (from DC to 20 GHz).","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121931010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931263
Nidheesh Kumar T R, N. Kumar, M. Sreenivasan, K. G. Thomas, P. H. Rao
A multi-layer tilted beam planar microstrip array for FMCW-SAR application is presented. The proposed 8×4 array antenna exhibits a beam tilt of 30 degrees in E-plane with a sidelobe level of 18dB and 20dB in H-plane without tilt. The inherent radiation pattern degradation of the array due to feed radiation is minimized with the proposed multilayered concept. The proposed design exhibits an improvement in sidelobe level of the order of 6dB in both E-and H-planes with better cross-polarization level. In the multi-layered design, the common ground plane separating the two stacked substrate layers, shields the antenna half-space from spurious radiation emitted from the feed network. The simulation results show that the radiation pattern in the operating frequency provides a 3dB beamwidths of 25° and 9° in E-plane and H-plane respectively. Array exhibits a gain of 20dBi at the centre frequency and cross polarization level of better than 15dB.
{"title":"A multi-layer X-Band microstrip array with beam tilt for FMCW-SAR application","authors":"Nidheesh Kumar T R, N. Kumar, M. Sreenivasan, K. G. Thomas, P. H. Rao","doi":"10.1109/APMC.2016.7931263","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931263","url":null,"abstract":"A multi-layer tilted beam planar microstrip array for FMCW-SAR application is presented. The proposed 8×4 array antenna exhibits a beam tilt of 30 degrees in E-plane with a sidelobe level of 18dB and 20dB in H-plane without tilt. The inherent radiation pattern degradation of the array due to feed radiation is minimized with the proposed multilayered concept. The proposed design exhibits an improvement in sidelobe level of the order of 6dB in both E-and H-planes with better cross-polarization level. In the multi-layered design, the common ground plane separating the two stacked substrate layers, shields the antenna half-space from spurious radiation emitted from the feed network. The simulation results show that the radiation pattern in the operating frequency provides a 3dB beamwidths of 25° and 9° in E-plane and H-plane respectively. Array exhibits a gain of 20dBi at the centre frequency and cross polarization level of better than 15dB.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"31 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120854049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931471
L. Malviya, R. K. Panigrahi, M. V. Kartikeyan
MIMO is the key to the wireless communication to solve the multipath propagation related issues for 4G technologies. A proximity coupled compact MIMO antenna is proposed for WLAN/WiMAX applications. The overall size of the proposed MIMO on the low cost FR-4 dielectric substrate is 39.63 × 82.15 mm2. The measured result shows more than 10 dB of in-band isolation, envelope correlation coefficient of 0.1, and gain of more than 2.75 dBi in the whole band.
{"title":"Proximity coupled MIMO antenna for WLAN/WiMAX applications","authors":"L. Malviya, R. K. Panigrahi, M. V. Kartikeyan","doi":"10.1109/APMC.2016.7931471","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931471","url":null,"abstract":"MIMO is the key to the wireless communication to solve the multipath propagation related issues for 4G technologies. A proximity coupled compact MIMO antenna is proposed for WLAN/WiMAX applications. The overall size of the proposed MIMO on the low cost FR-4 dielectric substrate is 39.63 × 82.15 mm2. The measured result shows more than 10 dB of in-band isolation, envelope correlation coefficient of 0.1, and gain of more than 2.75 dBi in the whole band.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126800235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931457
Saptarshi Ghosh, K. V. Srivastava
In this paper, a low-profile tunable bandstop frequency selective surface (FSS) is presented for S-band applications. The FSS consists of square loops connected through varactor diodes across the diagonals. By controlling the reverse voltage of the varactors, the resonance frequency can be tuned for a wide frequency range. Full-wave simulation shows 21% tuning range from 2.31 GHz to 2.79 GHz with respect to lower resonance frequency. The novelty of the design lies in its four-fold symmetry, which makes the structure polarization-insensitive. The FSS is also angularly stable under oblique incidence for both TE and TM polarizations. Additionally, an equivalent circuit model has been introduced to explain the resonance mechanism of the proposed FSS. The structure is also fabricated and measured, where good agreement is observed between simulated and measured responses.
{"title":"A tunable bandstop frequency selective surface with polarization-insensitive characteristic","authors":"Saptarshi Ghosh, K. V. Srivastava","doi":"10.1109/APMC.2016.7931457","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931457","url":null,"abstract":"In this paper, a low-profile tunable bandstop frequency selective surface (FSS) is presented for S-band applications. The FSS consists of square loops connected through varactor diodes across the diagonals. By controlling the reverse voltage of the varactors, the resonance frequency can be tuned for a wide frequency range. Full-wave simulation shows 21% tuning range from 2.31 GHz to 2.79 GHz with respect to lower resonance frequency. The novelty of the design lies in its four-fold symmetry, which makes the structure polarization-insensitive. The FSS is also angularly stable under oblique incidence for both TE and TM polarizations. Additionally, an equivalent circuit model has been introduced to explain the resonance mechanism of the proposed FSS. The structure is also fabricated and measured, where good agreement is observed between simulated and measured responses.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126830586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931330
A. Ghosh, M. Mandal, A. De, A. Chakrabarty, B. K. Sarkar
A high gain shared aperture dual-band dual-polarized (DBDP) patch antenna is proposed in this work. Dual polarization is obtained by exciting the antenna in two orthogonal directions using two separate ports. Higher order resonant mode is used to obtain higher gain. The antenna transmits and receives in L and S bands simultaneously with good isolation between the ports. Improved isolation is obtained by using an L-shaped slot and non-shorting pins on and below the radiating patch, respectively. A prototype element is fabricated. Isolation between the ports is 21 dB at 1.48 GHz and 39.25 dB at 2.59GHz. The measured gains in the broadside directions are 6.2 dB and 5.5 dB at the respective frequencies.
{"title":"Dual-band dual-polarized resonant patch antenna excited through isolated ports","authors":"A. Ghosh, M. Mandal, A. De, A. Chakrabarty, B. K. Sarkar","doi":"10.1109/APMC.2016.7931330","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931330","url":null,"abstract":"A high gain shared aperture dual-band dual-polarized (DBDP) patch antenna is proposed in this work. Dual polarization is obtained by exciting the antenna in two orthogonal directions using two separate ports. Higher order resonant mode is used to obtain higher gain. The antenna transmits and receives in L and S bands simultaneously with good isolation between the ports. Improved isolation is obtained by using an L-shaped slot and non-shorting pins on and below the radiating patch, respectively. A prototype element is fabricated. Isolation between the ports is 21 dB at 1.48 GHz and 39.25 dB at 2.59GHz. The measured gains in the broadside directions are 6.2 dB and 5.5 dB at the respective frequencies.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127624181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931481
Sanjeev Kumar, S. Chatterjee, S. Koul
This paper presents two patch antennae at a nominal resonance frequency of 77 GHz, namely a thin-substrate antenna and a thick-substrate antenna, using a standard 0.18 µm CMOS technology. Both the antennae are implemented on metal-6. The thin-substrate antenna uses metal-5 as the ground plane, and the thick-substrate antenna uses metal-1 as the ground plane. The thin-substrate antenna was fabricated on a 0.18 µm CMOS process and characterized. The thick-substrate antenna was only simulated. Measurements of the thin-substrate antenna show a peak S11 of −18.22 dB at 99.8 GHz. In simulation, the thin-substrate antenna has a peak gain and radiation efficiency of −25 dB and 1% respectively at 77 GHz. The thick-substrate antenna has a simulated peak gain and radiation efficiency of 5.18 dB and 58.31% respectively at 77 GHz.
{"title":"77 GHz integrated patch antennae in 0.18 µm CMOS technology","authors":"Sanjeev Kumar, S. Chatterjee, S. Koul","doi":"10.1109/APMC.2016.7931481","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931481","url":null,"abstract":"This paper presents two patch antennae at a nominal resonance frequency of 77 GHz, namely a thin-substrate antenna and a thick-substrate antenna, using a standard 0.18 µm CMOS technology. Both the antennae are implemented on metal-6. The thin-substrate antenna uses metal-5 as the ground plane, and the thick-substrate antenna uses metal-1 as the ground plane. The thin-substrate antenna was fabricated on a 0.18 µm CMOS process and characterized. The thick-substrate antenna was only simulated. Measurements of the thin-substrate antenna show a peak S11 of −18.22 dB at 99.8 GHz. In simulation, the thin-substrate antenna has a peak gain and radiation efficiency of −25 dB and 1% respectively at 77 GHz. The thick-substrate antenna has a simulated peak gain and radiation efficiency of 5.18 dB and 58.31% respectively at 77 GHz.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129038251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/APMC.2016.7931436
Gaurangi Gupta, A. Harish
A dipole antenna placed close to a high impedance surface (HIS) has been analyzed as a coupled resonator circuit. The coupling between dipole and HIS has been studied to deduce the necessary conditions for designing and placing the antenna. It has been found that the dipole resonant frequency is not limited to ±90° reflection phase range of HIS. A dipole ranging from 0.7 GHz to 1.55 GHz can couple efficiently with the HIS with operating frequency of 0.875 GHz for a wide impedance bandwidth.
{"title":"Coupling analysis of dipole antenna over high impedance surface","authors":"Gaurangi Gupta, A. Harish","doi":"10.1109/APMC.2016.7931436","DOIUrl":"https://doi.org/10.1109/APMC.2016.7931436","url":null,"abstract":"A dipole antenna placed close to a high impedance surface (HIS) has been analyzed as a coupled resonator circuit. The coupling between dipole and HIS has been studied to deduce the necessary conditions for designing and placing the antenna. It has been found that the dipole resonant frequency is not limited to ±90° reflection phase range of HIS. A dipole ranging from 0.7 GHz to 1.55 GHz can couple efficiently with the HIS with operating frequency of 0.875 GHz for a wide impedance bandwidth.","PeriodicalId":166478,"journal":{"name":"2016 Asia-Pacific Microwave Conference (APMC)","volume":"164 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131445221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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