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Journal of Semiconductor Technology and Science最新文献

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Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations 源结材料和掺杂剖面工程对线隧穿场效应管工作的影响
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-08-31 DOI: 10.5573/jsts.2023.23.4.228
Min-Ki Ko, Jang-Hyun Kim, Garam Kim
{"title":"Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations","authors":"Min-Ki Ko, Jang-Hyun Kim, Garam Kim","doi":"10.5573/jsts.2023.23.4.228","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.4.228","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"23 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84753631","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Lightweight Scan Architecture against the Scan-based Side-channel Attack 针对基于扫描的侧信道攻击的轻量级扫描架构
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-08-31 DOI: 10.5573/jsts.2023.23.4.243
Xiangqi Wang, Xingxing Gong, Xianmin Pan, Weizheng Wang
{"title":"A Lightweight Scan Architecture against the Scan-based Side-channel Attack","authors":"Xiangqi Wang, Xingxing Gong, Xianmin Pan, Weizheng Wang","doi":"10.5573/jsts.2023.23.4.243","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.4.243","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"40 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85938494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction 岛源结双工作功能线隧道场效应晶体管的优化设计
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-08-31 DOI: 10.5573/jsts.2023.23.4.207
Chaewon Yun, Sangwan Kim, Seongjae Cho, Il-Hwan Cho, Hyunwoo Kim, Jang-Hyun Kim, Garam Kim
{"title":"Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction","authors":"Chaewon Yun, Sangwan Kim, Seongjae Cho, Il-Hwan Cho, Hyunwoo Kim, Jang-Hyun Kim, Garam Kim","doi":"10.5573/jsts.2023.23.4.207","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.4.207","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"649 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79009251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure BCAT结构中球形浅沟槽隔离降低通栅效应
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-08-31 DOI: 10.5573/jsts.2023.23.4.236
Yeon-Seok Kim, Chang-Young Lim, Min-Woo Kwon
{"title":"Reduction of the Pass Gate Effect with a Spherical Shallow Trench Isolation in the BCAT Structure","authors":"Yeon-Seok Kim, Chang-Young Lim, Min-Woo Kwon","doi":"10.5573/jsts.2023.23.4.236","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.4.236","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"2 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86022778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor 分路电容对集火神经元电路尖峰行为的影响
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.189
K. Arati, E. Cho, Hyungsoon Shin, Seong-Taek Cho
{"title":"Dependency of Spiking Behaviors of an Integrate-and-fire Neuron Circuit on Shunt Capacitor","authors":"K. Arati, E. Cho, Hyungsoon Shin, Seong-Taek Cho","doi":"10.5573/jsts.2023.23.3.189","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.189","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"17 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78679295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lossless LUT Compressions for Image Enhancement 无损LUT压缩图像增强
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.162
Sunmyung Kim, Jaehee You
{"title":"Lossless LUT Compressions for Image Enhancement","authors":"Sunmyung Kim, Jaehee You","doi":"10.5573/jsts.2023.23.3.162","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.162","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"30 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84374003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Device Optimization for Short-channel Effects Suppression in UFETs ufet短通道效应抑制的器件优化
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.183
S. Yoon, Ja-Yun Ku, Khwang-Sun Lee, Dae-Han Jung, Dong-Hyun Wang, Jun-Young Park
{"title":"Device Optimization for Short-channel Effects Suppression in UFETs","authors":"S. Yoon, Ja-Yun Ku, Khwang-Sun Lee, Dae-Han Jung, Dong-Hyun Wang, Jun-Young Park","doi":"10.5573/jsts.2023.23.3.183","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.183","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"50 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90459662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Random Forest-based Thermal Effect Prediction for Clock Tree Synthesis in 3D-IC 基于随机森林的3D-IC时钟树合成热效应预测
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.149
Myeongwoo Jin, Deokkeun Oh, Juho Kim
{"title":"Random Forest-based Thermal Effect Prediction for Clock Tree Synthesis in 3D-IC","authors":"Myeongwoo Jin, Deokkeun Oh, Juho Kim","doi":"10.5573/jsts.2023.23.3.149","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.149","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"69 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77235352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Digital FLL-based Sub-harmonically Injection-locked PLL with Resolution-multiplied TDC for Frequency Offset Cancellation 一种基于数字锁相环的次谐波注入锁相环，具有分辨率倍增上止点，用于频率偏移抵消
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.202
Jongchan An, Seung-Myeong Yu, Junwon Jeong, Junyoung Song
{"title":"A Digital FLL-based Sub-harmonically Injection-locked PLL with Resolution-multiplied TDC for Frequency Offset Cancellation","authors":"Jongchan An, Seung-Myeong Yu, Junwon Jeong, Junyoung Song","doi":"10.5573/jsts.2023.23.3.202","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.202","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"7 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82180311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory 垂直NAND闪存的GIDL擦除特性分析
IF 0.4 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC
Journal of Semiconductor Technology and Science
Pub Date : 2023-06-30 DOI: 10.5573/jsts.2023.23.3.196
Honam Yoo, Yeongheon Yang, Min-Kyu Park, Woo-Young Choi, Jang-Sik Lee
{"title":"Analysis of GIDL Erase Characteristics in Vertical NAND Flash Memory","authors":"Honam Yoo, Yeongheon Yang, Min-Kyu Park, Woo-Young Choi, Jang-Sik Lee","doi":"10.5573/jsts.2023.23.3.196","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.3.196","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"14 1","pages":""},"PeriodicalIF":0.4,"publicationDate":"2023-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84294692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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