T. Hitobo, Masahiro Shiroki, H. Nabesawa, T. Asaji, T. Abe
Development of Titanium Micro Mold Manufacturing Technology for the Micro‰uidic Chip by Plasma Etching Takeshi HITOBO1, Masahiro SHIROKI2, Hirofumi NABESAWA3, Toyohisa ASAJI4 and Takashi ABE5 1Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama-shi, Toyama 9301305, Japan 2Richell Corp., 515 shoin, Nakaniikawagun Kamiichimachi, Toyama-shi, Toyama 9300357, Japan 3Toyama Industrial Technology Center, 383 Takata, Toyama-shi, Toyama 9300866, Japan 4National Institute of Technology, Toyama College, 13 Hongomachi, Toyama-shi, Toyama 9398045, Japan 5Graduate School of Science and Technology, Niigata University, 8050 Ikarashininocho, Nishi-ku, Niigata-shi, Niigata 9502181, Japan
{"title":"Development of Titanium Micro Mold Manufacturing Technology for the Microfluidic Chip by Plasma Etching","authors":"T. Hitobo, Masahiro Shiroki, H. Nabesawa, T. Asaji, T. Abe","doi":"10.3131/JVSJ2.60.145","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.145","url":null,"abstract":"Development of Titanium Micro Mold Manufacturing Technology for the Micro‰uidic Chip by Plasma Etching Takeshi HITOBO1, Masahiro SHIROKI2, Hirofumi NABESAWA3, Toyohisa ASAJI4 and Takashi ABE5 1Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama-shi, Toyama 9301305, Japan 2Richell Corp., 515 shoin, Nakaniikawagun Kamiichimachi, Toyama-shi, Toyama 9300357, Japan 3Toyama Industrial Technology Center, 383 Takata, Toyama-shi, Toyama 9300866, Japan 4National Institute of Technology, Toyama College, 13 Hongomachi, Toyama-shi, Toyama 9398045, Japan 5Graduate School of Science and Technology, Niigata University, 8050 Ikarashininocho, Nishi-ku, Niigata-shi, Niigata 9502181, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"58 1","pages":"145-147"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87082504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A single spin-rotational state-selected [(J,M)=(2,2)] O2 beam allows us to conduct a spinand alignment -controlled O2 chemisorption experiment. We have recently expanded its available translational energy range to 0.10.9 eV. In this study, the beam has been used for the analysis of O2 chemisorption on Pt(111). Although this system has been investigated intensively due to its technological importance, the origin of the low O2 sticking probability and its unusual energy dependence has remained unclear. The present results indicate that, at low translational energy (E0) conditions, direct activated chemisorption occurs only when the O2 axis is nearly parallel to the surface. At high energy conditions (E0>0.5 eV), however, the sticking probability for the parallel O2 decreases with E0 while that of the perpendicular O2 increases, accounting for the nearly energy-independent O2 sticking probability determined previously by a randomly oriented O2 beam.
{"title":"Development of a Hyperthermal State-selected Molecular Oxygen Beam and Its Application to the Study of O 2 Adsorption on Pt(111)","authors":"M. Kurahashi, H. Ueta","doi":"10.3131/jvsj2.60.307","DOIUrl":"https://doi.org/10.3131/jvsj2.60.307","url":null,"abstract":"A single spin-rotational state-selected [(J,M)=(2,2)] O2 beam allows us to conduct a spinand alignment -controlled O2 chemisorption experiment. We have recently expanded its available translational energy range to 0.10.9 eV. In this study, the beam has been used for the analysis of O2 chemisorption on Pt(111). Although this system has been investigated intensively due to its technological importance, the origin of the low O2 sticking probability and its unusual energy dependence has remained unclear. The present results indicate that, at low translational energy (E0) conditions, direct activated chemisorption occurs only when the O2 axis is nearly parallel to the surface. At high energy conditions (E0>0.5 eV), however, the sticking probability for the parallel O2 decreases with E0 while that of the perpendicular O2 increases, accounting for the nearly energy-independent O2 sticking probability determined previously by a randomly oriented O2 beam.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"14 1","pages":"307-312"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88440287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.
{"title":"Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices","authors":"N. Shigekawa","doi":"10.3131/jvsj2.60.421","DOIUrl":"https://doi.org/10.3131/jvsj2.60.421","url":null,"abstract":"Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"62 1","pages":"421-427"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88341533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Akito Nonomura, K. Kawakami, S. Ishidoshiro, Y. Kawamura, Y. Hayashi
Graphene was synthesized by radio-frequency magnetron-plasma-enhanced chemical vapor deposition on Si and SiO2 substrates along with on Cu substrate. Although the incubation period was longer and the nucleation density was smaller than the growth on Cu substrate, graphene was grown on Si and SiO2 substrates. It was speculated that the incubation period and nucleation density depend on the density of carbon precursor on substrate that is aŠected by the desorption speed of carbon or hydrocarbon.
{"title":"Synthesis of Graphene by Magnetron-Plasma-Enhanced Chemical Vapor Deposition on Different Substrate Materials","authors":"Akito Nonomura, K. Kawakami, S. Ishidoshiro, Y. Kawamura, Y. Hayashi","doi":"10.3131/jvsj2.60.459","DOIUrl":"https://doi.org/10.3131/jvsj2.60.459","url":null,"abstract":"Graphene was synthesized by radio-frequency magnetron-plasma-enhanced chemical vapor deposition on Si and SiO2 substrates along with on Cu substrate. Although the incubation period was longer and the nucleation density was smaller than the growth on Cu substrate, graphene was grown on Si and SiO2 substrates. It was speculated that the incubation period and nucleation density depend on the density of carbon precursor on substrate that is aŠected by the desorption speed of carbon or hydrocarbon.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"152 1","pages":"459-462"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83694932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Atmospheric pressure micro-thermal-plasma-jet (mTPJ) irradiation on amorphous silicon (aSi) strips and its application to thin ˆlm transistor (TFT) fabrication have been investigated. Strip channel with the width smaller than 3 mm is eŠective to eliminate random grain boundaries by ˆltering eŠect. High speed scanning of mTPJ suppresses mass transfer of molten Si and generation of in grain defects. By introducing strip channel, high performance TFTs with a high average ˆeld eŠect mobility (mFE) of 503 cm2V-1s-1 (nchannel) are successfully fabricated with small device to device variation. CMOS shift register fabricated with strip channel TFTs was operated by 5V power supply at 50MHz. These results indicate that mTPJ crystallization of strip channel is quite promising for next generation TFT applications.
{"title":"Development of Thermal Plasma Jet Induced Annealing Technology and Its Application to Electronic Device Fabrication","authors":"S. Higashi","doi":"10.3131/JVSJ2.60.77","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.77","url":null,"abstract":"Atmospheric pressure micro-thermal-plasma-jet (mTPJ) irradiation on amorphous silicon (aSi) strips and its application to thin ˆlm transistor (TFT) fabrication have been investigated. Strip channel with the width smaller than 3 mm is eŠective to eliminate random grain boundaries by ˆltering eŠect. High speed scanning of mTPJ suppresses mass transfer of molten Si and generation of in grain defects. By introducing strip channel, high performance TFTs with a high average ˆeld eŠect mobility (mFE) of 503 cm2V-1s-1 (nchannel) are successfully fabricated with small device to device variation. CMOS shift register fabricated with strip channel TFTs was operated by 5V power supply at 50MHz. These results indicate that mTPJ crystallization of strip channel is quite promising for next generation TFT applications.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"31 1","pages":"77-80"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81659859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"X線照射下におけるフィールドエミッタアレイの動作特性評価装置;X線照射下におけるフィールドエミッタアレイの動作特性評価装置;System for Evaluation of Electron Emission Properties of Field Emitter Arrays under X-ray Irradiation","authors":"Yasuhito Gotoh, Hiroshi Tsuji, Masayoshi Nagao, Masafumi Akiyoshi, Ikuji Takagi","doi":"10.3131/JVSJ2.60.328","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.328","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"1 1","pages":"328-333"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78133600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"International Vacuum Congress (IVC-20)の会議報告Vacuum Science and Technology/Surface Science/Applied Surface Science報告","authors":"孝範 越川","doi":"10.3131/JVSJ2.60.70","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.70","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"29 1","pages":"70-71"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90708227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A 640×480 pixel ˆeld emitter array (FEA) image sensor with a highgain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahighsensitivity compact image sensors for highdeˆnition TV cameras. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with su‹cient resolution while consuming far less power than current ultrahighsensitivity pickup tubes. Furthermore, various technologies which were suitable for practical image sensor have been developed.
{"title":"Ultra-high Sensitivity Flat Image Pick-up Tube with Field Emitter Array","authors":"M. Nanba","doi":"10.3131/JVSJ2.60.18","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.18","url":null,"abstract":"A 640×480 pixel ˆeld emitter array (FEA) image sensor with a highgain avalanche rushing amorphous photoconductor (HARP) target was fabricated and tested as a step toward the development of ultrahighsensitivity compact image sensors for highdeˆnition TV cameras. Experiments showed that the prototype sensor could obtain clear images with little noise under illumination on a level equivalent to moonlight, with su‹cient resolution while consuming far less power than current ultrahighsensitivity pickup tubes. Furthermore, various technologies which were suitable for practical image sensor have been developed.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"81 1","pages":"18-23"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90858752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
ProblemSolving Exercise for Basic Understanding of Vacuum Science and Technology (2) Kyo SHIBATA1,2,3 1High Energy Accelerator Research Organization (KEK), 11 Oho, Tsukuba-shi, Ibaraki 3050801, Japan 2SOKENDAI (The Graduate University for Advanced Studies), 11 Oho, Tsukuba-shi, Ibaraki 3050801, Japan 3Vacuum Society of Japan, Education Committee, 358 Shiba-koen, Minato-ku, Tokyo 1050011, Japan
{"title":"Problem-Solving Exercise for Basic Understanding of Vacuum Science and Technology (2)","authors":"K. Shibata","doi":"10.3131/jvsj2.60.212","DOIUrl":"https://doi.org/10.3131/jvsj2.60.212","url":null,"abstract":"ProblemSolving Exercise for Basic Understanding of Vacuum Science and Technology (2) Kyo SHIBATA1,2,3 1High Energy Accelerator Research Organization (KEK), 11 Oho, Tsukuba-shi, Ibaraki 3050801, Japan 2SOKENDAI (The Graduate University for Advanced Studies), 11 Oho, Tsukuba-shi, Ibaraki 3050801, Japan 3Vacuum Society of Japan, Education Committee, 358 Shiba-koen, Minato-ku, Tokyo 1050011, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"7 1","pages":"212-219"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79023519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"大電力パルススパッタ小特集に寄せて;大電力パルススパッタ小特集に寄せて;Preface to the Special Issue for the High Power Impulse/Pulsed Magnetron Sputtering","authors":"T. Nakano","doi":"10.3131/JVSJ2.60.339","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.339","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"19 1","pages":"339-340"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82354107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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