Development of a Portable Ultrahigh-Vacuum Sample Transfer Vessel and Its Application Eiichi KOBAYASHI1, Shukichi TANAKA2 and Toshihiro OKAJIMA1 1Kyushu Synchrotron Light Research Center, 87 Yayoigaoka, Tosu-shi, Saga 8410005, Japan 2AdvancedICT Research Institute, National Institute of Information and Communications Technology, 5882 Iwaoka, Iwaoka-cho, Nishi-ku, Kobe-shi, Hyogo 6512492, Japan
{"title":"可搬型超高真空試料搬送導入装置の開発とその応用;可搬型超高真空試料搬送導入装置の開発とその応用;Development of a Portable Ultrahigh-Vacuum Sample Transfer Vessel and Its Application","authors":"Eiichi Kobayashi, Shukichi Tanaka, Toshihiro Okajima","doi":"10.3131/JVSJ2.60.139","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.139","url":null,"abstract":"Development of a Portable Ultrahigh-Vacuum Sample Transfer Vessel and Its Application Eiichi KOBAYASHI1, Shukichi TANAKA2 and Toshihiro OKAJIMA1 1Kyushu Synchrotron Light Research Center, 87 Yayoigaoka, Tosu-shi, Saga 8410005, Japan 2AdvancedICT Research Institute, National Institute of Information and Communications Technology, 5882 Iwaoka, Iwaoka-cho, Nishi-ku, Kobe-shi, Hyogo 6512492, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"33 1","pages":"139-141"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87971362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Hitobo, Masahiro Shiroki, H. Nabesawa, T. Asaji, T. Abe
Development of Titanium Micro Mold Manufacturing Technology for the Micro‰uidic Chip by Plasma Etching Takeshi HITOBO1, Masahiro SHIROKI2, Hirofumi NABESAWA3, Toyohisa ASAJI4 and Takashi ABE5 1Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama-shi, Toyama 9301305, Japan 2Richell Corp., 515 shoin, Nakaniikawagun Kamiichimachi, Toyama-shi, Toyama 9300357, Japan 3Toyama Industrial Technology Center, 383 Takata, Toyama-shi, Toyama 9300866, Japan 4National Institute of Technology, Toyama College, 13 Hongomachi, Toyama-shi, Toyama 9398045, Japan 5Graduate School of Science and Technology, Niigata University, 8050 Ikarashininocho, Nishi-ku, Niigata-shi, Niigata 9502181, Japan
{"title":"Development of Titanium Micro Mold Manufacturing Technology for the Microfluidic Chip by Plasma Etching","authors":"T. Hitobo, Masahiro Shiroki, H. Nabesawa, T. Asaji, T. Abe","doi":"10.3131/JVSJ2.60.145","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.145","url":null,"abstract":"Development of Titanium Micro Mold Manufacturing Technology for the Micro‰uidic Chip by Plasma Etching Takeshi HITOBO1, Masahiro SHIROKI2, Hirofumi NABESAWA3, Toyohisa ASAJI4 and Takashi ABE5 1Tateyama Machine Co., Ltd., 30 Shimonoban, Toyama-shi, Toyama 9301305, Japan 2Richell Corp., 515 shoin, Nakaniikawagun Kamiichimachi, Toyama-shi, Toyama 9300357, Japan 3Toyama Industrial Technology Center, 383 Takata, Toyama-shi, Toyama 9300866, Japan 4National Institute of Technology, Toyama College, 13 Hongomachi, Toyama-shi, Toyama 9398045, Japan 5Graduate School of Science and Technology, Niigata University, 8050 Ikarashininocho, Nishi-ku, Niigata-shi, Niigata 9502181, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"58 1","pages":"145-147"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87082504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.
{"title":"Bonding of Dissimilar Semiconductor Materials for Energy-Harvesting and Energy-Saving Devices","authors":"N. Shigekawa","doi":"10.3131/jvsj2.60.421","DOIUrl":"https://doi.org/10.3131/jvsj2.60.421","url":null,"abstract":"Research activities on surface activated bonding (SAB) of dissimilar semiconductor materials for targeting advanced energy-harvesting and energy-saving devices are reviewed. The structural and electrical properties of interfaces fabricated using the SAB technologies are examined. The change in the interface characteristics due to annealing after bonding is highlighted. The characteristics of SAB-based hybrid multi-junction solar cells, SiC/Si junctions as prototypes of wide bandgap/narrow bandgap hetero structures, and single-crystal diamond/Si junctions for integrating diamond and Si devices in the future are discussed.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"62 1","pages":"421-427"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88341533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Fabrication method for nanocluster superatoms with high-power impulse magnetron sputtering","authors":"H. Tsunoyama, M. Tona, K. Tsukamoto, A. Nakajima","doi":"10.3131/JVSJ2.60.352","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.352","url":null,"abstract":"Fabrication Method for Nanocluster Superatoms with High-Power Impulse Magnetron Sputtering Hironori TSUNOYAMA1,2, Masahide TONA3, Keizo TSUKAMOTO3 and Atsushi NAKAJIMA1,2,4 1Faculty of Science and Technology, Keio University, 3141 Hiyoshi, Kohoku-ku, Yokohama-shi, Kanagawa 2238522, Japan 2Nakajima Designer Nanocluster Assembly Project, ERATO, Japan Science and Technology Agency, 321 Sakado, Takatsu-ku, Kawasaki-shi, Kanagawa 2130012, Japan 3Ayabo Corporation, 1 Fukamacho Hosogute, Anjo-shi, Aichi 4460052, Japan 4Keio Institute of Pure and Applied Science (KiPAS), Keio University, 3141 Hiyoshi, Kohoku-ku, Yokohama-shi, Kanagawa 2238522, Japan","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"8 1","pages":"352-361"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90376240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A single spin-rotational state-selected [(J,M)=(2,2)] O2 beam allows us to conduct a spinand alignment -controlled O2 chemisorption experiment. We have recently expanded its available translational energy range to 0.10.9 eV. In this study, the beam has been used for the analysis of O2 chemisorption on Pt(111). Although this system has been investigated intensively due to its technological importance, the origin of the low O2 sticking probability and its unusual energy dependence has remained unclear. The present results indicate that, at low translational energy (E0) conditions, direct activated chemisorption occurs only when the O2 axis is nearly parallel to the surface. At high energy conditions (E0>0.5 eV), however, the sticking probability for the parallel O2 decreases with E0 while that of the perpendicular O2 increases, accounting for the nearly energy-independent O2 sticking probability determined previously by a randomly oriented O2 beam.
{"title":"Development of a Hyperthermal State-selected Molecular Oxygen Beam and Its Application to the Study of O 2 Adsorption on Pt(111)","authors":"M. Kurahashi, H. Ueta","doi":"10.3131/jvsj2.60.307","DOIUrl":"https://doi.org/10.3131/jvsj2.60.307","url":null,"abstract":"A single spin-rotational state-selected [(J,M)=(2,2)] O2 beam allows us to conduct a spinand alignment -controlled O2 chemisorption experiment. We have recently expanded its available translational energy range to 0.10.9 eV. In this study, the beam has been used for the analysis of O2 chemisorption on Pt(111). Although this system has been investigated intensively due to its technological importance, the origin of the low O2 sticking probability and its unusual energy dependence has remained unclear. The present results indicate that, at low translational energy (E0) conditions, direct activated chemisorption occurs only when the O2 axis is nearly parallel to the surface. At high energy conditions (E0>0.5 eV), however, the sticking probability for the parallel O2 decreases with E0 while that of the perpendicular O2 increases, accounting for the nearly energy-independent O2 sticking probability determined previously by a randomly oriented O2 beam.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"14 1","pages":"307-312"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88440287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The 14th International Symposium on Sputtering and Plasma Processes (ISSP2017)","authors":"Y. Yamada","doi":"10.3131/jvsj2.60.517","DOIUrl":"https://doi.org/10.3131/jvsj2.60.517","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"13 1","pages":"517-518"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75755413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"International Vacuum Congress (IVC-20)の会議報告電子材料・プロセス(EMP)/先進半導体とディスプレイデバイス(ASDD)/真空科学技術(VST)","authors":"肇 吉田","doi":"10.3131/JVSJ2.60.26","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.26","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"4 1","pages":"26-26"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72693991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A relatively new industrial sputtering technology based on High Power Impulse Magnetron Sputtering (HiPIMS) is demonstrated. HiPIMS is a magnetron discharge process like conventional dc magnetron sputtering (DCMS). However, momentarily input power is approximately ten times higher in magnitude. In this study HiPIMS discharge is characterized by Optical Emission Spectroscopy (OES), and compared with DCMS and cathodic arc (CA). The result shows that the HiPIMS provides the high ionization degree of the sputtered metal species. The degree of Ti ionization is found to be increased as the pulse frequency of HiPIMS is decreased, which enables to adjust the sputter plasma properties ranging from lowmetal ionization to highmetal ionization by controlling the pulse frequency. This expands an opportunity to tailor the properties of sputtered thin ˆlms.
{"title":"Comparison of Plasma Ion Deposition Processes at Industrial Scale","authors":"Satoshi Hirota, R. Cremer, Tetsuya Takahashi","doi":"10.3131/JVSJ2.60.362","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.362","url":null,"abstract":"A relatively new industrial sputtering technology based on High Power Impulse Magnetron Sputtering (HiPIMS) is demonstrated. HiPIMS is a magnetron discharge process like conventional dc magnetron sputtering (DCMS). However, momentarily input power is approximately ten times higher in magnitude. In this study HiPIMS discharge is characterized by Optical Emission Spectroscopy (OES), and compared with DCMS and cathodic arc (CA). The result shows that the HiPIMS provides the high ionization degree of the sputtered metal species. The degree of Ti ionization is found to be increased as the pulse frequency of HiPIMS is decreased, which enables to adjust the sputter plasma properties ranging from lowmetal ionization to highmetal ionization by controlling the pulse frequency. This expands an opportunity to tailor the properties of sputtered thin ˆlms.","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"15 1","pages":"362-364"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72900809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"International Vacuum Congress (IVC-20)の会議報告Vacuum Science and Technology/Surface Science/Applied Surface Science報告","authors":"孝範 越川","doi":"10.3131/JVSJ2.60.70","DOIUrl":"https://doi.org/10.3131/JVSJ2.60.70","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"29 1","pages":"70-71"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90708227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Development of Simple Fabrication Method of SiO2 Diaphragm Using Inward Plasma Etching Ryo KANOU1,3, Hiroshi SUGA1, Shun'ichiro SHIMBORI2, Satoshi TAKAHASHI2, Toshitaka KUBO3, Atsushi ANDO3, Tetsuo SHIMIZU3 and Jun MIYAWAKI3 1Department of Engineering, Chiba Institute of Technology, 2171 Tsudanuma, Narashino-shi, Chiba 2750016, Japan 2Sanyu Co., Ltd., 2434 Ishinazaka-cho, Hitachi-shi, Ibaraki 3191225, Japan 3National Institute of Advanced Industrial Science and Technology, 111 Higashi, Tsukuba-shi, Ibaraki 3058565, Japan
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：