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Critical Layer Thickness for Columnar Growth Nanostructures of CoPt-based Alloy-Oxide Granular Media used for Perpendicular Magnetic Recording 垂直磁记录用钴基氧化合金颗粒介质柱状生长纳米结构的临界层厚
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.112
S. Sasaki, Y. Sasaki, S. Saito
Critical Layer Thickness for Columnar Growth Nanostructures of CoPtbased AlloyOxide Granular Media used for Perpendicular Magnetic Recording Shingo SASAKI1, Yuzo SASAKI2 and Shin SAITO2 1Department of Intelligent Systems Engineering, National Institute of Technology, Ichinoseki College, Takanashi, Hagisho, Ichinoseki-shi, Iwate 0218511, Japan 2Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 6605, Aoba, Aramaki, Aoba-ku, Sendai-shi, Miyagi 9808579, Japan
关键层厚度增长柱状纳米结构的科普特人基于合金氧化物颗粒媒体用于垂直磁记录取佐佐木1,三佐佐木2和胫骨齐藤21智能系统工程系,国家技术学院,Ichinoseki学院Takanashi, Hagisho, Ichinoseki-shi、岩手县021年8511年,日本2电子工程系,工程,研究生院东北大学,6605,Aoba, Aramaki, Aoba-ku, Sendai-shi,日本宫城9808579
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引用次数: 1
Dislocations in 4H-SiC Epilayers 4H-SiC脱毛层中的位错
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.285
H. Saka
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引用次数: 0
2017「青少年のための科学の祭典」東京大会 in 小金井への真空実験の出展報告;2017「青少年のための科学の祭典」東京大会 in 小金井への真空実験の出展報告;Report on Exhibition of Vacuum Experiments at the 2017 Youngsters' Science Festival in Koganei 2017“为青少年的科学祭典”东京大会in小金井真空实验参展报告;2017“为青少年的科学祭典”东京大会in小金井真空实验参展报告;Vacuum Experiments at the 2017 Youngsters' Science Festival in Koganei Report on Exhibition
Pub Date : 2017-01-01 DOI: 10.3131/jvsj2.60.514
Masuaki Matsumoto
{"title":"2017「青少年のための科学の祭典」東京大会 in 小金井への真空実験の出展報告;2017「青少年のための科学の祭典」東京大会 in 小金井への真空実験の出展報告;Report on Exhibition of Vacuum Experiments at the 2017 Youngsters' Science Festival in Koganei","authors":"Masuaki Matsumoto","doi":"10.3131/jvsj2.60.514","DOIUrl":"https://doi.org/10.3131/jvsj2.60.514","url":null,"abstract":"","PeriodicalId":17344,"journal":{"name":"Journal of The Vacuum Society of Japan","volume":"19 1","pages":"514-516"},"PeriodicalIF":0.0,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81820155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
走査トンネル顕微鏡(STM)による有機薄膜太陽電池の局所性能評価 扫描隧道显微镜(STM)有机薄膜太阳能电池的局部性能评估
Pub Date : 2017-01-01 DOI: 10.3131/jvsj2.60.381
修 武内, 貴大 落合, 昭二 吉田, 秀実 重川
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引用次数: 0
走査トンネル顕微鏡で見る近藤効果:Au(111)表面上の鉄フタロシアニン分子を例として 扫描隧道显微镜下的近藤效应:以Au(111)表面上的铁酞菁分子为例
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.165
規志 塚原
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引用次数: 0
平成29年度学会賞,真空の匠,フェローの審査経過と顕彰業績紹介 平成29年度学会奖,“真空之匠”的评审经过和表彰业绩介绍
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.239
鎭明 財満
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引用次数: 0
The Report on Topical Meeting of the Vacuum Society of Japan in June 2017 “Low Temperature Science and Vacuum Science” 2017年6月日本真空学会专题会议报告“低温科学与真空科学”
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.410
A. Itakura
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引用次数: 0
Development of Thin Film Formation Technique Using Ion Irradiation Effect Control in Sputtering Method 溅射法中离子辐照效应控制薄膜形成技术的发展
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.81
H. Toyota
We fabricated Ni ˆlms on a Polyimide (PI) ˆlm and an Acrylonitrile-Butadiene-Styrene (ABS) resin substrate using unbalanced magnetron sputtering assisted by inductively coupled plasma. For the PI ˆlm, the eŠect of ion irradiation was controlled by substrate DC bias VS and magnetic ‰ux density toward the substrate BC. For the ABS resin substrate, the eŠect of ion irradiation was controlled by target DC power PT and magnetic ‰ux density toward the substrate BC. For each substrate, we investigated the eŠect of ion irradiation on the Ni ˆlm structures in detail. The eŠect of ion irradiation E was estimated by measured physical quantities with respect to sputtered atom ‰ux, ion ‰ux and ion energy. From xray diŠraction measurement, the crystallite size t(111) increased with the eŠect of ion irradiation. Minimum ˆlm resistivities of 9.0×10-6 and 1.4×10-5 Qcm were measured for BC=3 mT and E=0.24 on the PI ˆlm and BC=5 mT and E=0.98 on the ABS resin substrate, respectively. We conclude that controlling the eŠect of ion irradiation is eŠective for high quality Ni ˆlm formation on the PI ˆlm and the ABS resin substrate.
我们在聚酰亚胺(PI)薄膜和丙烯腈-丁二烯-苯乙烯(ABS)树脂衬底上利用电感耦合等离子体辅助的不平衡磁控溅射制备了Ni - lms。对于PI - lm,离子辐照的eŠect由衬底直流偏置VS和向衬底BC的磁密度‰ux控制。对于ABS树脂基材,离子辐照的eŠect由目标直流功率PT和对基材BC的磁密度控制。对于每种衬底,我们详细研究了离子辐照对Ni - lm结构的eŠect影响。离子辐照E的eŠect是通过对溅射原子‰ux、离子‰ux和离子能量的测量物理量来估计的。从x射线diŠraction测量可知,随着离子辐照eŠect,晶体尺寸t(111)增大。当BC=3 mT, E=0.24, BC=5 mT, E=0.98时,分别测量了9.0×10-6和1.4×10-5 Qcm的最小λ lm电阻率。我们得出结论:控制离子辐照的eŠect是在PI - m和ABS树脂基体上形成高质量Ni - m的eŠective。
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引用次数: 0
真空エレクトロスプレーを用いるイオン銃の開発;真空エレクトロスプレーを用いるイオン銃の開発;Development of an Ion Gun Using Vacuum Electrospray 开发使用真空电子喷胶的离子枪;开发使用真空电子喷胶的离子枪;Development of an Ion Gun Using Vacuum Electrospray
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.321
Satoshi Ninomiya, Yuji Sakai, Lee Chuin Chen, Kenzo Hiraoka
Atmospheric pressure electrospray had been used previously in our laboratory to generate massive cluster ion beam for charged droplet ionization; a method we called electrospray droplet impact (EDI). Previous ion gun that employed atmospheric pressure electrospray lacks adequate beam current and density for surface and interface analysis. To improve the EDI beam performance, we have proposed a technique for producing a stable electrospray of aqueous solution under vacuum. It is well known that vacuum electrospray of volatile liquids is di‹cult because of the freezing of the liquids by evaporative cooling under vacuum. Vacuum electrospray of aqueous solution was achieved by irradiating the tip of the electrospray emitter with infrared or near-infrared laser to prevent the freezing under high vacuum (<0.05 Pa). A stable and large beam current was also obtained by optimizing the vacuum electrospray conditions. On the basis of these results, the vacuum electrospray can be expected to be a high-performance massive cluster ion gun.
本实验室以前使用常压电喷雾产生大质量簇束离子束,使带电液滴电离;我们称之为电喷雾液滴撞击(EDI)的方法。以前使用常压电喷雾的离子枪缺乏足够的光束电流和密度来进行表面和界面分析。为了提高EDI光束的性能,我们提出了一种在真空条件下制备稳定水溶液电喷雾的技术。众所周知,挥发性液体的真空电喷雾是不可行的,因为液体在真空条件下通过蒸发冷却而冻结。为了防止水溶液在高真空(<0.05 Pa)下冻结,采用红外或近红外激光照射电喷雾发射器尖端,实现了水溶液的真空电喷雾。通过对真空电喷雾条件的优化,获得了稳定的大电流。基于这些结果,真空电喷雾有望成为一种高性能的大质量簇离子枪。
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引用次数: 1
Development of Miniature Sputtering Deposition Equipment for Minimal Fab with HiPIMS Operations 采用hiims操作的微型晶圆厂溅射沉积设备的开发
Pub Date : 2017-01-01 DOI: 10.3131/JVSJ2.60.365
H. Ogiso, K. Yukimura, S. Nakano, Hiroyuki Tanaka, S. Khumpuang, Yuuki Yabuta, Ryuichiro Kamei, S. Hara
Development of Miniature Sputtering Deposition Equipment for Minimal Fab with HiPIMS Operations Hisato OGISO1, Ken YUKIMURA2, Shizuka NAKANO1, Hiroyuki TANAKA2, Sommawan KHUMPUANG2, Yuuki YABUTA3, Ryuichiro KAMEI3 and Shiro HARA2 1Advanced Manufacturing Research Institute, National Institute of Industrial Science and Technology (AIST), 121 Namiki, Tsukuba-shi, Ibaraki 3058564 Japan 2Nanoelectronics Research Institute, National Institute of Industrial Science and Technology (AIST), 111 Umezono, Tsukuba-shi, Ibaraki 3058568, Japan 3Seinan-kogyo Co., Ltd., 4324 Kitakagaya, Summinoe-ku, Osaka-shi, Osaka 5590011 Japan
发展微型溅射沉积设备最小的工厂与HiPIMS操作Hisato OGISO1,肯YUKIMURA2,静香NAKANO1)田中2,Sommawan KHUMPUANG2,较YABUTA3,静香Ryuichiro3和Shiro HARA21先进制造研究所,研究所科技工业(产业),121只,Tsukuba-shi,茨城县3058564日本2纳电子学研究所、国家工业科技研究所(巨大),111茨城市筑波市梅津野30585683 se南-kogyo有限公司,4324大阪市住明区北上谷5590011日本
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引用次数: 0
期刊
Journal of The Vacuum Society of Japan
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