H. Akutsu, Reiko Saito, J. Asakawa, K. Kiyokawa, M. Morita, T. Sakamoto, M. Fujii
{"title":"Distribution of trace impurities in microvolumes and analysis of concentration using laser sputtered neutral mass spectrometry","authors":"H. Akutsu, Reiko Saito, J. Asakawa, K. Kiyokawa, M. Morita, T. Sakamoto, M. Fujii","doi":"10.1116/6.0001244","DOIUrl":"https://doi.org/10.1116/6.0001244","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"31 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75984027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Michael Elsen, Thi Thu Hien Dao, C. Braxmaier, J. Grosse
{"title":"Leakage rate detection of ConFlat seals in aluminum and stainless steel flanges under mechanical loads for quantum optical experiments in space","authors":"Michael Elsen, Thi Thu Hien Dao, C. Braxmaier, J. Grosse","doi":"10.1116/6.0001525","DOIUrl":"https://doi.org/10.1116/6.0001525","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"52 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86686956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
N. Hesam Mahmoudi Nezhad, M. Ghaffarian Niasar, A. Mohammadi Gheidari, P. Kruit, C. W. Hagen
{"title":"Multiple criteria optimization of electrostatic electron lenses using multiobjective genetic algorithms","authors":"N. Hesam Mahmoudi Nezhad, M. Ghaffarian Niasar, A. Mohammadi Gheidari, P. Kruit, C. W. Hagen","doi":"10.1116/6.0001274","DOIUrl":"https://doi.org/10.1116/6.0001274","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"26 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83862526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Modeling the effect of stochastic heating and surface chemistry in a pure CF4 inductively coupled plasma","authors":"D. Levko, Chandrasekhar Shukla, L. Raja","doi":"10.1116/6.0001293","DOIUrl":"https://doi.org/10.1116/6.0001293","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"33 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80991197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Kimura, H. Yoshida, H. Miyazaki, Takuya Fujimoto, A. Ogino
{"title":"Enhancement of thermionic emission and conversion characteristics using polarization- and band-engineered n-type AlGaN/GaN cathodes","authors":"S. Kimura, H. Yoshida, H. Miyazaki, Takuya Fujimoto, A. Ogino","doi":"10.1116/6.0001357","DOIUrl":"https://doi.org/10.1116/6.0001357","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"97 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77653781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Due to increasing demand on the fabrication yield and throughput in micro/nanoscale manufacturing, virtual metrology (VM) has emerged as an effective data-based approach for real-time process monitoring. In this work, a novel automated methodology, without the need for domain knowledge and experience, for extracting useful features from raw optical emission spectroscopy (OES) data is presented. Newly proposed OES features are combined with other types of data, which include tool settings, sensor readings, physical measurements, non-numerical data, and process control parameters. Using partial least squares and support vector regression, VM models for predicting the critical dimension after reactive ion etching are built. The results from the VM model indicate that the coefficient of determination of up to 0.65 and the root mean square Error of 0.08 can be achieved. Compared to the traditional features obtained by the current solution in industry, the performances of VM models via the proposed methodology can enhance the coefficient of determination by 62.5% and reduce the root mean square error by 23.1%. Published under an exclusive license by the AVS. https://doi.org/10.1116/6.0001277
{"title":"Virtual metrology modeling of reactive ion etching based on statistics-based and dynamics-inspired spectral features","authors":"Kun-Chieh Chien, Chih‐Hao Chang, D. Djurdjanović","doi":"10.1116/6.0001277","DOIUrl":"https://doi.org/10.1116/6.0001277","url":null,"abstract":"Due to increasing demand on the fabrication yield and throughput in micro/nanoscale manufacturing, virtual metrology (VM) has emerged as an effective data-based approach for real-time process monitoring. In this work, a novel automated methodology, without the need for domain knowledge and experience, for extracting useful features from raw optical emission spectroscopy (OES) data is presented. Newly proposed OES features are combined with other types of data, which include tool settings, sensor readings, physical measurements, non-numerical data, and process control parameters. Using partial least squares and support vector regression, VM models for predicting the critical dimension after reactive ion etching are built. The results from the VM model indicate that the coefficient of determination of up to 0.65 and the root mean square Error of 0.08 can be achieved. Compared to the traditional features obtained by the current solution in industry, the performances of VM models via the proposed methodology can enhance the coefficient of determination by 62.5% and reduce the root mean square error by 23.1%. Published under an exclusive license by the AVS. https://doi.org/10.1116/6.0001277","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"2013 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87735346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Daiki Sato, H. Shikano, A. Koizumi, T. Nishitani, Y. Honda, H. Amano
A p-type InGaN grown on a double-side polished sapphire substrate was used for the photocathode. The surface of p-InGaN was cleaned by heating in the vacuum chamber with a base pressure of 5×10-9 Pa. Cs and O2 were alternately supplied on the surface for activation of the photocathode(3). The quantum efficiency immediately after the activation process was 14%. The electron gun test system was composed of a cathode electrode, an anode electrode, an electrostatic lens, and a fluorescent screen. The voltages applied to the cathode electrode and the electrostatic lens were -15 and -8.6 kV, respectively. A Gaussian-distributed laser with a wavelength of 405 nm was diffracted by liquid crystal on silicon, divided into 25 laser beams, and irradiated on the InGaN photocathode from its backside. Each laser beam had Gaussian distribution with a diameter of 30 μm and an interval of 310 μm (Figure 1(a)). The generated multiple electron-beam was observed by the fluorescent screen. Deviations in the diameter of each electron beam was evaluated.
{"title":"Multiple electron beam generation from InGaN photocathode","authors":"Daiki Sato, H. Shikano, A. Koizumi, T. Nishitani, Y. Honda, H. Amano","doi":"10.1116/6.0001272","DOIUrl":"https://doi.org/10.1116/6.0001272","url":null,"abstract":"A p-type InGaN grown on a double-side polished sapphire substrate was used for the photocathode. The surface of p-InGaN was cleaned by heating in the vacuum chamber with a base pressure of 5×10-9 Pa. Cs and O2 were alternately supplied on the surface for activation of the photocathode(3). The quantum efficiency immediately after the activation process was 14%. The electron gun test system was composed of a cathode electrode, an anode electrode, an electrostatic lens, and a fluorescent screen. The voltages applied to the cathode electrode and the electrostatic lens were -15 and -8.6 kV, respectively. A Gaussian-distributed laser with a wavelength of 405 nm was diffracted by liquid crystal on silicon, divided into 25 laser beams, and irradiated on the InGaN photocathode from its backside. Each laser beam had Gaussian distribution with a diameter of 30 μm and an interval of 310 μm (Figure 1(a)). The generated multiple electron-beam was observed by the fluorescent screen. Deviations in the diameter of each electron beam was evaluated.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"83 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90089713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soichiro Matsunaga, A. Takei, Souichi Katagiri, Yusuke Sakai, Takashi Doi
{"title":"Diffusion of zirconium on the surface of Schottky electron sources","authors":"Soichiro Matsunaga, A. Takei, Souichi Katagiri, Yusuke Sakai, Takashi Doi","doi":"10.1116/6.0001381","DOIUrl":"https://doi.org/10.1116/6.0001381","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"83 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82048427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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