R. Dawant, Robyn Seils, S. Ecoffey, R. Schmid, D. Drouin
{"title":"Hybrid cross correlation and line-scan alignment strategy for CMOS chips electron-beam lithography processing","authors":"R. Dawant, Robyn Seils, S. Ecoffey, R. Schmid, D. Drouin","doi":"10.1116/6.0001278","DOIUrl":"https://doi.org/10.1116/6.0001278","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"114 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77557378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Starodubov, A. Serdobintsev, V. Galushka, I. Kozhevnikov, A. Pavlov, G. Ulisse, V. Krozer, N. Ryskin
{"title":"Magnetron co-sputtered μm-thick Mo–Cu films as structural material with low heat extension for key parts of high-power millimeter-band vacuum microelectronic devices","authors":"A. Starodubov, A. Serdobintsev, V. Galushka, I. Kozhevnikov, A. Pavlov, G. Ulisse, V. Krozer, N. Ryskin","doi":"10.1116/6.0001552","DOIUrl":"https://doi.org/10.1116/6.0001552","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"231 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74505842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Bhattacharya, M. Cannon, R. Bhattacharjee, G. Rughoobur, N. Karaulac, W. Chern, A. Akinwande, J. Browning
Field emission cathodes are promising candidates in nanoscale vacuum channel transistors and are used in microwave vacuum electron devices. Prior research has shown that UV light exposure as well as 350 °C vacuum bake can desorb water vapor from Si field emission tips, resulting in lower work function and improved emission performance. However, after long exposure to room air (greater than 24 h), the improved performance is lost as water adsorbs on the tips. In this study, experiments were carried on two sets of 1000 × 1000 Si-gated field emitter arrays to determine the length of time that emitters can be exposed to room air without degradation. First, the samples were exposed to UV light irradiation in vacuum, and the I–V curves were measured. Then, the samples were exposed to room air with a relative humidity ranging from 30% to 40% for varying times (5, 6, 8, 12, 24, and 48 h) and then tested again under high vacuum. It was found that the emission current did not degrade after room air exposure of 5 h. However, at 6 h of exposure, degradation started to occur, and after 24 h, the emission current went back to the original, pre-UV exposure case. In a separate experiment, UV irradiated samples were stored in nitrogen for 72 h, with a 10% degradation in current. These results demonstrate that field emission devices with improved performance resulting from water desorption can be handled in air up to 5 h, depending upon humidity and stored in nitrogen for 72 h while maintaining improved performance. Published under an exclusive license by the AVS. https://doi.org/10.1116/6.0001593
{"title":"Effect of room air exposure on the field emission performance of UV light irradiated Si-gated field emitter arrays","authors":"R. Bhattacharya, M. Cannon, R. Bhattacharjee, G. Rughoobur, N. Karaulac, W. Chern, A. Akinwande, J. Browning","doi":"10.1116/6.0001593","DOIUrl":"https://doi.org/10.1116/6.0001593","url":null,"abstract":"Field emission cathodes are promising candidates in nanoscale vacuum channel transistors and are used in microwave vacuum electron devices. Prior research has shown that UV light exposure as well as 350 °C vacuum bake can desorb water vapor from Si field emission tips, resulting in lower work function and improved emission performance. However, after long exposure to room air (greater than 24 h), the improved performance is lost as water adsorbs on the tips. In this study, experiments were carried on two sets of 1000 × 1000 Si-gated field emitter arrays to determine the length of time that emitters can be exposed to room air without degradation. First, the samples were exposed to UV light irradiation in vacuum, and the I–V curves were measured. Then, the samples were exposed to room air with a relative humidity ranging from 30% to 40% for varying times (5, 6, 8, 12, 24, and 48 h) and then tested again under high vacuum. It was found that the emission current did not degrade after room air exposure of 5 h. However, at 6 h of exposure, degradation started to occur, and after 24 h, the emission current went back to the original, pre-UV exposure case. In a separate experiment, UV irradiated samples were stored in nitrogen for 72 h, with a 10% degradation in current. These results demonstrate that field emission devices with improved performance resulting from water desorption can be handled in air up to 5 h, depending upon humidity and stored in nitrogen for 72 h while maintaining improved performance. Published under an exclusive license by the AVS. https://doi.org/10.1116/6.0001593","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"161 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86221027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Eun Taek Lim, Sung Yong Park, Ji Soo Lee, S. Kim, C. Chung
{"title":"Nanometer-scale etching of copper thin films in high-density plasma of an ethylenediamine/acetic acid/argon gas mixture","authors":"Eun Taek Lim, Sung Yong Park, Ji Soo Lee, S. Kim, C. Chung","doi":"10.1116/6.0001592","DOIUrl":"https://doi.org/10.1116/6.0001592","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"429 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76664054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Field ion microscopy images of multilayered graphene and graphene oxide","authors":"Y. Saito","doi":"10.1116/6.0001545","DOIUrl":"https://doi.org/10.1116/6.0001545","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"31 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90493395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Roberto Garcia, L. Giannuzzi, F. Stevie, Phillip Strader
{"title":"Enhanced focused ion beam milling with use of nested raster patterns","authors":"Roberto Garcia, L. Giannuzzi, F. Stevie, Phillip Strader","doi":"10.1116/6.0001411","DOIUrl":"https://doi.org/10.1116/6.0001411","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"14 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79364508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Ion energy control in an industrial ICP etch chamber without bias power usage","authors":"M. Klick, Hans Maucher","doi":"10.1116/6.0001477","DOIUrl":"https://doi.org/10.1116/6.0001477","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"10 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78688668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Behavior of the field enhancement due to mutual depolarization on a pair of triangular emitters at short and large separations","authors":"Edgar Marcelino de Carvalho Neto","doi":"10.1116/6.0001555","DOIUrl":"https://doi.org/10.1116/6.0001555","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"1 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87430384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Both single emitters and large area field emitters (LAFE) are generally characterized using the slope and intercept of a Murphy-Good (or Fowler-Nordheim) plot which are used to extract the field enhancement factor and the emission area. Using a shielding model that has been developed recently for a LAFE, the validity of the underlying assumption is investigated. It is found that in case of a LAFE, the slope has contributions from the enhancement factor as well as the rate at which the effective number of super-emitters changes with the applied field. As a consequence, the emission area is related to both the slope and the intercept in a LAFE. When the mean spacing in a LAFE is much larger than the height of emitter, the usual interpretation of the slope and intercept are recovered.
{"title":"Interpreting the field emission equation for large area field emitters","authors":"D. Biswas","doi":"10.1116/6.0001683","DOIUrl":"https://doi.org/10.1116/6.0001683","url":null,"abstract":"Both single emitters and large area field emitters (LAFE) are generally characterized using the slope and intercept of a Murphy-Good (or Fowler-Nordheim) plot which are used to extract the field enhancement factor and the emission area. Using a shielding model that has been developed recently for a LAFE, the validity of the underlying assumption is investigated. It is found that in case of a LAFE, the slope has contributions from the enhancement factor as well as the rate at which the effective number of super-emitters changes with the applied field. As a consequence, the emission area is related to both the slope and the intercept in a LAFE. When the mean spacing in a LAFE is much larger than the height of emitter, the usual interpretation of the slope and intercept are recovered.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"24 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81415058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Subradiant resonances in Au and Ag bipartite lattices in the visible spectrum","authors":"A. Warren, M. Alkaisi, C. Moore","doi":"10.1116/6.0001270","DOIUrl":"https://doi.org/10.1116/6.0001270","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"64 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74084113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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