An advanced multiphysics EDA (Electronic Design Automation) methodology is presented for analyzing thermal and thermomechanical problems during chip assembly and operation. The tool-prototype, which was built on the basis of this methodology, employs an anisotropic effective thermal-mechanical property methodology that replaces building complex geometries in finite element analysis simulations, thereby enhancing accuracy and performance significantly. With multiscale capabilities enabled, the tool-prototype first performs full chip stress and temperature analyses and detects hotspots. Then, a detailed analysis is performed in the selected regions of interest, with the resolution adjusted to a feature-scale by adopting a finer grid for extracting effective properties, and enables one to address feature-scale stress-induced issues such as back-end-of-line cracking or stress-induced mobility degradation of transistors. When the tool-prototype is linked with power analysis and layout EDA tools, it can perform the reliability check within the design flow. The assessment procedure will help to design power efficient chips by avoiding thermal and stress hotspots that compromise chip performance and reliability.
{"title":"Advanced methodology for assessing chip package interaction effects on chip performance and reliability after chip assembly and during chip operation","authors":"J. Choy, V. Sukharev, A. Kteyan","doi":"10.1116/6.0000506","DOIUrl":"https://doi.org/10.1116/6.0000506","url":null,"abstract":"An advanced multiphysics EDA (Electronic Design Automation) methodology is presented for analyzing thermal and thermomechanical problems during chip assembly and operation. The tool-prototype, which was built on the basis of this methodology, employs an anisotropic effective thermal-mechanical property methodology that replaces building complex geometries in finite element analysis simulations, thereby enhancing accuracy and performance significantly. With multiscale capabilities enabled, the tool-prototype first performs full chip stress and temperature analyses and detects hotspots. Then, a detailed analysis is performed in the selected regions of interest, with the resolution adjusted to a feature-scale by adopting a finer grid for extracting effective properties, and enables one to address feature-scale stress-induced issues such as back-end-of-line cracking or stress-induced mobility degradation of transistors. When the tool-prototype is linked with power analysis and layout EDA tools, it can perform the reliability check within the design flow. The assessment procedure will help to design power efficient chips by avoiding thermal and stress hotspots that compromise chip performance and reliability.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82180750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nabid Hasan, Soo-Young Lee, Byungsup Ahn, Jin Choi, Joonsoo Park
Massively parallel electron-beam (e-beam) systems (MPESs) were developed to increase the writing throughput and demonstrated to be able to write large-scale patterns significantly faster compared to conventional single-beam systems. However, such systems still suffer from the inherent proximity effect due to the electron scattering in the resist. The proximity effect correction (PEC) has been investigated for a long time, and several PEC schemes have been proposed. Though most of the PEC schemes may be employed for an MPES, their direct application would be subject to the system’s constraints, e.g., a relatively large beam size, a fixed exposing interval, and the same deflection angle for all beams, which may lead to nonoptimal correction results. In this work, practical methods for realizing various types of spatial dose distributions required for the PEC and implementing both shape and dose corrections under the MPES constraints have been developed. It has been shown that, with these methods, the proximity effect correction can be performed effectively with the critical dimension error, line edge roughness, and total dose taken into account.
{"title":"Shape and dose control for proximity effect correction on massively parallel electron-beam systems","authors":"Nabid Hasan, Soo-Young Lee, Byungsup Ahn, Jin Choi, Joonsoo Park","doi":"10.1116/6.0000556","DOIUrl":"https://doi.org/10.1116/6.0000556","url":null,"abstract":"Massively parallel electron-beam (e-beam) systems (MPESs) were developed to increase the writing throughput and demonstrated to be able to write large-scale patterns significantly faster compared to conventional single-beam systems. However, such systems still suffer from the inherent proximity effect due to the electron scattering in the resist. The proximity effect correction (PEC) has been investigated for a long time, and several PEC schemes have been proposed. Though most of the PEC schemes may be employed for an MPES, their direct application would be subject to the system’s constraints, e.g., a relatively large beam size, a fixed exposing interval, and the same deflection angle for all beams, which may lead to nonoptimal correction results. In this work, practical methods for realizing various types of spatial dose distributions required for the PEC and implementing both shape and dose corrections under the MPES constraints have been developed. It has been shown that, with these methods, the proximity effect correction can be performed effectively with the critical dimension error, line edge roughness, and total dose taken into account.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79618626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lijun Ma, Mingya Zhang, Xiaolei Zhang, Xu Zheng, S. Xue, Qing Wang
The effects of cavity shapes and rounded corners on polymer filling and mold stress distributions of nanoimprint lithography are investigated using a numerical simulation approach. Three types of mold cavities including a rectangular cavity with vertical sidewalls, a trapezoidal cavity with inclined sidewalls, and a semicircular cavity with curved sidewalls are used to study the polymer flow and the filling situation in the embossing stage. Stress distributions of three types of molds are compared to evaluate the mold durability under different imprint pressures. To further optimize filling ratios and the stress concentration, three molds with round corners are proposed. Simulation results show that the mold with a semicircular cavity can achieve complete filling under the lowest pressure, but the maximum von Mises stress is greater than that of others. The filling ratio of the trapezoidal cavity is better than that of the rectangular cavity, and the maximum von Mises stress is the smallest among three types of molds. With the increase in the radius of round corners for three molds, filling ratios are improved and the maximum stresses decrease apparently, which not only improve the pattern transferring fidelity but also prolong the service life of the mold effectively.
{"title":"Effects of cavity shapes and rounded corners of mold on polymer filling process in nanoimprint lithography","authors":"Lijun Ma, Mingya Zhang, Xiaolei Zhang, Xu Zheng, S. Xue, Qing Wang","doi":"10.1116/6.0000498","DOIUrl":"https://doi.org/10.1116/6.0000498","url":null,"abstract":"The effects of cavity shapes and rounded corners on polymer filling and mold stress distributions of nanoimprint lithography are investigated using a numerical simulation approach. Three types of mold cavities including a rectangular cavity with vertical sidewalls, a trapezoidal cavity with inclined sidewalls, and a semicircular cavity with curved sidewalls are used to study the polymer flow and the filling situation in the embossing stage. Stress distributions of three types of molds are compared to evaluate the mold durability under different imprint pressures. To further optimize filling ratios and the stress concentration, three molds with round corners are proposed. Simulation results show that the mold with a semicircular cavity can achieve complete filling under the lowest pressure, but the maximum von Mises stress is greater than that of others. The filling ratio of the trapezoidal cavity is better than that of the rectangular cavity, and the maximum von Mises stress is the smallest among three types of molds. With the increase in the radius of round corners for three molds, filling ratios are improved and the maximum stresses decrease apparently, which not only improve the pattern transferring fidelity but also prolong the service life of the mold effectively.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80341172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Supercapacitors are an important developing technology for renewable energy, hybrid and electric vehicles, and personal electronics. One material of interest for supercapacitor electrodes is Mn2O3, which is low cost, nontoxic, and easily fabricated. While traditional electrode fabrication involves mixing active materials with binders and conductive agents, electrospinning Mn2O3 fibers directly onto charge-collecting substrates simplifies processing and reduces overall mass. Herein, the effects of electrospinning solution composition, electrospinning duration, and calcination time on the electrochemical storage capacity of Mn2O3 web electrodes are studied. Electrode morphologies are examined, and the relationships between processing, morphology, and storage capacity are discussed. A numerical model fit to the data assesses a relative significance of the four fabrication parameters.
{"title":"Electrospun Mn2O3 web electrodes: Influence of fabrication parameters on electrochemical performance","authors":"M. C. Brockway, J. Skinner","doi":"10.1116/6.0000553","DOIUrl":"https://doi.org/10.1116/6.0000553","url":null,"abstract":"Supercapacitors are an important developing technology for renewable energy, hybrid and electric vehicles, and personal electronics. One material of interest for supercapacitor electrodes is Mn2O3, which is low cost, nontoxic, and easily fabricated. While traditional electrode fabrication involves mixing active materials with binders and conductive agents, electrospinning Mn2O3 fibers directly onto charge-collecting substrates simplifies processing and reduces overall mass. Herein, the effects of electrospinning solution composition, electrospinning duration, and calcination time on the electrochemical storage capacity of Mn2O3 web electrodes are studied. Electrode morphologies are examined, and the relationships between processing, morphology, and storage capacity are discussed. A numerical model fit to the data assesses a relative significance of the four fabrication parameters.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83444228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Due to continued technology scaling, electromigration has become a serious reliability concern in modern integrated circuits. This is further aggravated by the pervasive use of inaccurate models for electromigration based on traditional empirical black-box models. We will review the modern approach to electromigration verification, with emphasis on recent physical models, then summarize our work on a finite-difference based approach for power grid electromigration checking using these models. The method simulates the electromigration damage across the power grid, much like simulating for voltage or current. The lifetimes found using this physics-based approach are on average about twice or more than those based on the traditional empirical approaches. Because this approach is computationally efficient, one is able to handle large grids with millions of branches. We then present detailed analysis of the steady-state stress and its relation to voltages and currents in the grid, along with a number of design considerations that follow from this analysis.
{"title":"Electromigration simulation and design considerations for integrated circuit power grids","authors":"F. Najm, V. Sukharev","doi":"10.1116/6.0000476","DOIUrl":"https://doi.org/10.1116/6.0000476","url":null,"abstract":"Due to continued technology scaling, electromigration has become a serious reliability concern in modern integrated circuits. This is further aggravated by the pervasive use of inaccurate models for electromigration based on traditional empirical black-box models. We will review the modern approach to electromigration verification, with emphasis on recent physical models, then summarize our work on a finite-difference based approach for power grid electromigration checking using these models. The method simulates the electromigration damage across the power grid, much like simulating for voltage or current. The lifetimes found using this physics-based approach are on average about twice or more than those based on the traditional empirical approaches. Because this approach is computationally efficient, one is able to handle large grids with millions of branches. We then present detailed analysis of the steady-state stress and its relation to voltages and currents in the grid, along with a number of design considerations that follow from this analysis.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74152361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using a scanning tunneling microscope, we have examined the effect of the bias voltage on the apparent barrier height. The sample used in this study was a nitrogen-doped lanthanum hexaboride film. We experimentally proved that a linear relationship exists between the apparent barrier height and the sample bias voltage. As a consequence, we estimated the work function of the film to be 2.35 eV by theoretical fitting. This value is in good agreement with that obtained by photoemission spectroscopy in a previous study. Our results demonstrate that the work function calculated through apparent barrier height measurements is guaranteed to be highly reliable in spite of the simple one-dimensional model. We anticipate that the sensitivity of the barrier height to the sample work function can be utilized for elemental identification on surfaces with characteristic work functions.
{"title":"Bias-voltage-dependent measurement of apparent barrier height on low-work-function thin film","authors":"K. Nagaoka, S. Ohmi","doi":"10.1116/6.0000436","DOIUrl":"https://doi.org/10.1116/6.0000436","url":null,"abstract":"Using a scanning tunneling microscope, we have examined the effect of the bias voltage on the apparent barrier height. The sample used in this study was a nitrogen-doped lanthanum hexaboride film. We experimentally proved that a linear relationship exists between the apparent barrier height and the sample bias voltage. As a consequence, we estimated the work function of the film to be 2.35 eV by theoretical fitting. This value is in good agreement with that obtained by photoemission spectroscopy in a previous study. Our results demonstrate that the work function calculated through apparent barrier height measurements is guaranteed to be highly reliable in spite of the simple one-dimensional model. We anticipate that the sensitivity of the barrier height to the sample work function can be utilized for elemental identification on surfaces with characteristic work functions.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82180148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaocheng Liu, P. Fecko, Z. Fohlerova, T. Karásek, J. Pekárek, P. Neužil
The modification of surface properties frequently requires the binding of suitable compounds to the original surface. Silanes or thiols can be directly covalently bonded to either Si-based materials or Au, thus ruling out polymers. Here, we show the utilization of a layer of SiO2 with a thickness of a few nanometers that serves as a cross-linker between polymers and silanes providing covalent bonding to the surface. We deposited a polymer onto a thermally oxidized microstructured Si surface followed by subsequent Si removal. We demonstrated a Si-based nanotechnology fabrication method that can be generally used to modify the surface properties of practically any polymer via SiO2 cross-linking. This can produce any topology, including microstructures, nanostructures, or composite microstructure/nanostructures terminating in different shapes, since all the steps involving polymer deposition are conducted at room temperature after the Si surface has been thermally oxidized. This technique opens a broad field of new applications for polymers in microstructures and nanostructures that have stable water surface contact angle values with the contact angle set by demand for gecko-mimicking structures or lotus leaf inspired surfaces.
{"title":"Parylene micropillars coated with thermally grown SiO2","authors":"Xiaocheng Liu, P. Fecko, Z. Fohlerova, T. Karásek, J. Pekárek, P. Neužil","doi":"10.1116/6.0000558","DOIUrl":"https://doi.org/10.1116/6.0000558","url":null,"abstract":"The modification of surface properties frequently requires the binding of suitable compounds to the original surface. Silanes or thiols can be directly covalently bonded to either Si-based materials or Au, thus ruling out polymers. Here, we show the utilization of a layer of SiO2 with a thickness of a few nanometers that serves as a cross-linker between polymers and silanes providing covalent bonding to the surface. We deposited a polymer onto a thermally oxidized microstructured Si surface followed by subsequent Si removal. We demonstrated a Si-based nanotechnology fabrication method that can be generally used to modify the surface properties of practically any polymer via SiO2 cross-linking. This can produce any topology, including microstructures, nanostructures, or composite microstructure/nanostructures terminating in different shapes, since all the steps involving polymer deposition are conducted at room temperature after the Si surface has been thermally oxidized. This technique opens a broad field of new applications for polymers in microstructures and nanostructures that have stable water surface contact angle values with the contact angle set by demand for gecko-mimicking structures or lotus leaf inspired surfaces.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89419650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaowei Wang, Hsien-chih Huang, B. Green, Xiang Gao, D. Rosenmann, Xiuling Li, J. Shi
Au-free, Ti/Al/Ta ohmic contact on the AlGaN/AlN/GaN heterostructure using low annealing temperature is studied in this paper. With SiCl4 plasma treatment at the recess-etched contact region, a low contact resistance of 0.52 Ω mm and a low sheet resistance of 373 Ω/sq are achieved after annealing at 550 °C for 30 s. The low annealing temperature also leads to better surface morphology. Furthermore, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) are fabricated with the 550 °C, 30 s annealed Ti/Al/Ta ohmic contacts, and a maximum transconductance of 123 mS/mm and a maximum drain current of 510 mA/mm are obtained for a gate length of 4 μm. Based on Silvaco's Atlas device simulation framework, a scaled-down device with a short gate length of 1 μm would produce a maximum drain current density of 815 mA/mm. It indicates that the direct current performance of the HEMTs with the ohmic metal proposed in this work is considerably better than that with Au-based ohmic contact.
{"title":"Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures","authors":"Xiaowei Wang, Hsien-chih Huang, B. Green, Xiang Gao, D. Rosenmann, Xiuling Li, J. Shi","doi":"10.1116/6.0000287","DOIUrl":"https://doi.org/10.1116/6.0000287","url":null,"abstract":"Au-free, Ti/Al/Ta ohmic contact on the AlGaN/AlN/GaN heterostructure using low annealing temperature is studied in this paper. With SiCl4 plasma treatment at the recess-etched contact region, a low contact resistance of 0.52 Ω mm and a low sheet resistance of 373 Ω/sq are achieved after annealing at 550 °C for 30 s. The low annealing temperature also leads to better surface morphology. Furthermore, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) are fabricated with the 550 °C, 30 s annealed Ti/Al/Ta ohmic contacts, and a maximum transconductance of 123 mS/mm and a maximum drain current of 510 mA/mm are obtained for a gate length of 4 μm. Based on Silvaco's Atlas device simulation framework, a scaled-down device with a short gate length of 1 μm would produce a maximum drain current density of 815 mA/mm. It indicates that the direct current performance of the HEMTs with the ohmic metal proposed in this work is considerably better than that with Au-based ohmic contact.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88815515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rogel Jan B. Butalid, A. P. S. Cristobal, Arantxa Danielle S. Montallana, M. Vasquez
Investigations on the stability of titanium dioxide ( TiO 2)-coated zinc oxide (ZnO) thin films upon repeated uses for methylene blue (MB) degradation were conducted. Photocorrosion of ZnO, upon exposure to light in aqueous media, can affect the photocatalytic performance due to loss of material. Hence, coating with a more stable metal oxide was seen as a way to suppress the effects of photocorrosion. In this study, homogeneous wurtzite ZnO nanostructured thin films were obtained from thermal oxidation of sputter-deposited Zn films on glass substrates. TiO 2 was subsequently deposited onto the ZnO nanostructured thin films using a reactive magnetron sputtering system in an admixture of argon and oxygen gases. After deposition, the thin films were annealed at 500 °C for 1 h. The photocatalytic efficiency and stability of the thin films were investigated after multiple degradation cycles. The addition of a TiO 2 film increased the surface roughness and blueshifted the absorption edge of the ZnO thin films. The coated films obtained up to 94.3% degradation efficiency of MB after a 180-min exposure cycle using a solar light simulator. After three cycles, degradation efficiency decreased for the uncoated ZnO photocatalysts. Analysis of the MB solution after one degradation cycle revealed the presence of Zn 2 + ions attributed to the effects of photocorrosion. Higher Zn 2 + concentrations were observed when the ZnO surface is uncoated. This study showed that the addition of a thin, antiphotocorrosion material such as TiO 2 layer decreased the dissolution of ZnO caused by photocorrosion without a significant reduction in the photodegradation efficiency.
{"title":"Stability of TiO2-coated ZnO photocatalytic thin films for photodegradation of methylene blue","authors":"Rogel Jan B. Butalid, A. P. S. Cristobal, Arantxa Danielle S. Montallana, M. Vasquez","doi":"10.1116/6.0000306","DOIUrl":"https://doi.org/10.1116/6.0000306","url":null,"abstract":"Investigations on the stability of titanium dioxide ( TiO 2)-coated zinc oxide (ZnO) thin films upon repeated uses for methylene blue (MB) degradation were conducted. Photocorrosion of ZnO, upon exposure to light in aqueous media, can affect the photocatalytic performance due to loss of material. Hence, coating with a more stable metal oxide was seen as a way to suppress the effects of photocorrosion. In this study, homogeneous wurtzite ZnO nanostructured thin films were obtained from thermal oxidation of sputter-deposited Zn films on glass substrates. TiO 2 was subsequently deposited onto the ZnO nanostructured thin films using a reactive magnetron sputtering system in an admixture of argon and oxygen gases. After deposition, the thin films were annealed at 500 °C for 1 h. The photocatalytic efficiency and stability of the thin films were investigated after multiple degradation cycles. The addition of a TiO 2 film increased the surface roughness and blueshifted the absorption edge of the ZnO thin films. The coated films obtained up to 94.3% degradation efficiency of MB after a 180-min exposure cycle using a solar light simulator. After three cycles, degradation efficiency decreased for the uncoated ZnO photocatalysts. Analysis of the MB solution after one degradation cycle revealed the presence of Zn 2 + ions attributed to the effects of photocorrosion. Higher Zn 2 + concentrations were observed when the ZnO surface is uncoated. This study showed that the addition of a thin, antiphotocorrosion material such as TiO 2 layer decreased the dissolution of ZnO caused by photocorrosion without a significant reduction in the photodegradation efficiency.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79503344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We explore the structure–property relationships in hybrid organosilicate glasses that form a special class of materials for use in advanced interconnects to improve their mechanical reliability by exploiting the structural characteristics most effectively. Our results show that hybrid organosilicate glasses that are hyperconnected and derived from organic linkers with optimal molecular geometry lead to exceptional elastic and fracture properties. Using molecular dynamics simulations and the min-cut algorithm that is based on a novel graph theory approach, we demonstrate the choice of hyperconnected and cyclic planar organic linkers, such as the 1,3,5-benzene ring, significantly increases the bulk modulus and total fracture bond density, which is directly correlated with fracture energy.
{"title":"Mechanically reliable hybrid organosilicate glasses for advanced interconnects","authors":"Karsu I. Kilic, R. Dauskardt","doi":"10.1116/6.0000517","DOIUrl":"https://doi.org/10.1116/6.0000517","url":null,"abstract":"We explore the structure–property relationships in hybrid organosilicate glasses that form a special class of materials for use in advanced interconnects to improve their mechanical reliability by exploiting the structural characteristics most effectively. Our results show that hybrid organosilicate glasses that are hyperconnected and derived from organic linkers with optimal molecular geometry lead to exceptional elastic and fracture properties. Using molecular dynamics simulations and the min-cut algorithm that is based on a novel graph theory approach, we demonstrate the choice of hyperconnected and cyclic planar organic linkers, such as the 1,3,5-benzene ring, significantly increases the bulk modulus and total fracture bond density, which is directly correlated with fracture energy.","PeriodicalId":17652,"journal":{"name":"Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2020-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76659776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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