Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995516
F. Weiss, A. Pisch, C. Bernard, U. Schmatz
Future high power applications of high Tc superconducting materials (like YBa 2 Cu 3 O 6+x ) demand thick films with excellent electrical properties. The use of thin film deposition techniques is only possible when high deposition rates can be reached. A novel aerosol MOCVD technique using a liquid source has recently been developed and is very promising for this purpose. The precursor materials used are the β-diketonates of yttrium, barium and copper, dissolved in diethylene glycol dimethyl ether (diglyme) in various concentrations. A preliminary thermodynamic simulation of the process is a useful tool for a deeper understanding of the stability limits of the superconducting phase and the on-going reactions during deposition. The results of these simulations have been used to optimise the process conditions for YBa 2 Cu 3 O 6+x growth with good superconducting properties. A comparison between the simulation and the experimental results will be given and the influence of the main process parameters (deposition temperature, oxygen partial pressure, precursor concentration,...) will be shown.
未来高Tc超导材料(如YBa 2 Cu 3 O 6+x)的高功率应用需要具有优异电性能的厚膜。只有当能达到高沉积速率时，才有可能使用薄膜沉积技术。一种新型的使用液体源的气溶胶MOCVD技术最近被开发出来，在这方面很有前途。使用的前驱体材料是钇、钡和铜的β-二酮酸盐，溶解在不同浓度的二甘醇二甲醚(二甘醇)中。该过程的初步热力学模拟对于更深入地理解超导相的稳定性极限和沉积过程中正在进行的反应是一个有用的工具。这些模拟结果已用于优化具有良好超导性能的YBa 2 Cu 3 o6 +x生长的工艺条件。将模拟结果与实验结果进行比较，并说明主要工艺参数(沉积温度、氧分压、前驱体浓度等)的影响。
{"title":"Thermodynamic Simulation of YBa2Cu3O6+x Film Growth Using Aerosol MOCVD","authors":"F. Weiss, A. Pisch, C. Bernard, U. Schmatz","doi":"10.1051/JPHYSCOL:1995516","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995516","url":null,"abstract":"Future high power applications of high Tc superconducting materials (like YBa 2 Cu 3 O 6+x ) demand thick films with excellent electrical properties. The use of thin film deposition techniques is only possible when high deposition rates can be reached. A novel aerosol MOCVD technique using a liquid source has recently been developed and is very promising for this purpose. The precursor materials used are the β-diketonates of yttrium, barium and copper, dissolved in diethylene glycol dimethyl ether (diglyme) in various concentrations. A preliminary thermodynamic simulation of the process is a useful tool for a deeper understanding of the stability limits of the superconducting phase and the on-going reactions during deposition. The results of these simulations have been used to optimise the process conditions for YBa 2 Cu 3 O 6+x growth with good superconducting properties. A comparison between the simulation and the experimental results will be given and the influence of the main process parameters (deposition temperature, oxygen partial pressure, precursor concentration,...) will be shown.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77110940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995541
A. Figueras
HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors A. Figueras
{"title":"Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors","authors":"A. Figueras","doi":"10.1051/JPHYSCOL:1995541","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995541","url":null,"abstract":"HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors A. Figueras","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81080226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955137
M. Berti, A. Drigo, M. Mazzer, A. Camporese, G. Torzo, G. Rossetto
An experimental study has been performed using RBS and AFM characterization on InP islands grown by MOVPE on GaAs substrate, aiming to understand the influence of the growth parameters on the size distribution of the nanostructures. In the temperature range 580+650°C the total amount of deposited InP is independent of temperature which, on the contrary, affects the morphology of the growing islands.This work is part of a broader investigation on the feasibility of self organized growth to obtain nanosized semiconductor islands (Quantum Dots) by exploiting the mismatch-induced strain between substrate and epilayer in MOVPE deposition. In particular our data on the islands size are in very good agreement with preliminary indications of analytical and numerical models on the minimization of the total energy of the island-substrate system.
{"title":"Production and Characterization of Quantum Nanostructures of Epitaxial Semiconductors","authors":"M. Berti, A. Drigo, M. Mazzer, A. Camporese, G. Torzo, G. Rossetto","doi":"10.1051/JPHYSCOL:19955137","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955137","url":null,"abstract":"An experimental study has been performed using RBS and AFM characterization on InP islands grown by MOVPE on GaAs substrate, aiming to understand the influence of the growth parameters on the size distribution of the nanostructures. In the temperature range 580+650°C the total amount of deposited InP is independent of temperature which, on the contrary, affects the morphology of the growing islands.This work is part of a broader investigation on the feasibility of self organized growth to obtain nanosized semiconductor islands (Quantum Dots) by exploiting the mismatch-induced strain between substrate and epilayer in MOVPE deposition. In particular our data on the islands size are in very good agreement with preliminary indications of analytical and numerical models on the minimization of the total energy of the island-substrate system.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"117 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79943069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995563
A. Grafov, I. Grafova, E. Mazurenko, L. I. Koval, S. Catinella, P. Traldi, G. Battiston, P. Zanella
Among a variety of applications of organometallic compounds, their use as MOCVD precursors is one of the most extensive areas. To our minds, one of the most powerful and accurate methods for evaluation and prediction of thermal behaviour of the precursor is mass-spectrometry coupled with mass-analyzed ion kinetic energy spectrometry. Traditionally, both structure and composition of deposited materials and the precursor's thermal decomposition channels were controlled by gas-phase composition, the process temperature and pressure, i.e. by extemal factors. A possibility of such a control via inner factors - i.e. structure of a specially designed precursors is demonstrated for a series of new mixed-ligand organometallic compounds of In, Zr and Hf.
{"title":"Structure and Destruction of a Precursor : Mass-Spectrometric Evaluation of Creation of Functional Films with Predeterminated Composition","authors":"A. Grafov, I. Grafova, E. Mazurenko, L. I. Koval, S. Catinella, P. Traldi, G. Battiston, P. Zanella","doi":"10.1051/JPHYSCOL:1995563","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995563","url":null,"abstract":"Among a variety of applications of organometallic compounds, their use as MOCVD precursors is one of the most extensive areas. To our minds, one of the most powerful and accurate methods for evaluation and prediction of thermal behaviour of the precursor is mass-spectrometry coupled with mass-analyzed ion kinetic energy spectrometry. Traditionally, both structure and composition of deposited materials and the precursor's thermal decomposition channels were controlled by gas-phase composition, the process temperature and pressure, i.e. by extemal factors. A possibility of such a control via inner factors - i.e. structure of a specially designed precursors is demonstrated for a series of new mixed-ligand organometallic compounds of In, Zr and Hf.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"181 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73936767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995524
P. P. Semyannikov, V. Grankin, I. Igumenov, G. I. Zharkova
By the electron impact mass-spectrometric method, the temperature dependence of the gas phase structure was investigated at the thermal decomposition of dimethylgold chelate vapour of the general formula (CH 3 ) 2 AuL, where L = (RC(X)CHC(Y)R'); R = CH 3 , C(CH 3 ) 3 ; R' = CH 3 , C(CH 3 ) 3 , CF 3 ; X = O, NH; Y = O, S) in vacuum and deuterium environment at temperatures up to 350 °C and the saturated vapour pressure by 10 -4 -10 -2 Torr. The threshold temperature of the stability of comlexes vapour was determined. From the temperature dependence of the rate constant of decomposition processes the effective activation energy was obtained. It was shown that the initial act of the complexes destruction is break of the chelate cycle. The following decomposition process comlexes adsorbed at the surface lead to HL, L and CH 3 L, methane and ethane by competitive inside-and intermolecular processes. The presence of deuterium (or hydrogen) in the reaction zone courses to decrease onset temperatures for all investigated compounds.
{"title":"Mechanism of Interaction of Dimethylgold(III) Chelates Vapour with Hot Surface","authors":"P. P. Semyannikov, V. Grankin, I. Igumenov, G. I. Zharkova","doi":"10.1051/JPHYSCOL:1995524","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995524","url":null,"abstract":"By the electron impact mass-spectrometric method, the temperature dependence of the gas phase structure was investigated at the thermal decomposition of dimethylgold chelate vapour of the general formula (CH 3 ) 2 AuL, where L = (RC(X)CHC(Y)R'); R = CH 3 , C(CH 3 ) 3 ; R' = CH 3 , C(CH 3 ) 3 , CF 3 ; X = O, NH; Y = O, S) in vacuum and deuterium environment at temperatures up to 350 °C and the saturated vapour pressure by 10 -4 -10 -2 Torr. The threshold temperature of the stability of comlexes vapour was determined. From the temperature dependence of the rate constant of decomposition processes the effective activation energy was obtained. It was shown that the initial act of the complexes destruction is break of the chelate cycle. The following decomposition process comlexes adsorbed at the surface lead to HL, L and CH 3 L, methane and ethane by competitive inside-and intermolecular processes. The presence of deuterium (or hydrogen) in the reaction zone courses to decrease onset temperatures for all investigated compounds.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"53 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84822371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995540
J. Sobiecki, T. Wierzchoń
By using a gaseous mixture composed of tetraisopropoxytitanium, nitrogen and hydrogen in PACVD process, we obtain Ti(OCN) layers of a good performance properties, such as a high hardness and good resistance to corrosion and to frictional wear. The optimum temperature of the process is 500°C. At higher temperatures, the surface microhardness decreases. When the process is carried out at 700°C, a surface layer which contain titanium cannot be obtained, only a diffusive oxycarbonitrided layer forms. Spectral investigations by optical emission spectroscopy have shown that the active particles that take part in the formation of the Ti(OCN) type layer are titanium ion Ti - , nitrogen particles: N - , N 2 ', NH, oxygen atoms and CN radicals coming from the gaseous atmosphere and also nitrogen from the pre-nitrided substrate.
{"title":"Formation of Ti(OCN) Layers Under Glow Discharge Conditions","authors":"J. Sobiecki, T. Wierzchoń","doi":"10.1051/JPHYSCOL:1995540","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995540","url":null,"abstract":"By using a gaseous mixture composed of tetraisopropoxytitanium, nitrogen and hydrogen in PACVD process, we obtain Ti(OCN) layers of a good performance properties, such as a high hardness and good resistance to corrosion and to frictional wear. The optimum temperature of the process is 500°C. At higher temperatures, the surface microhardness decreases. When the process is carried out at 700°C, a surface layer which contain titanium cannot be obtained, only a diffusive oxycarbonitrided layer forms. Spectral investigations by optical emission spectroscopy have shown that the active particles that take part in the formation of the Ti(OCN) type layer are titanium ion Ti - , nitrogen particles: N - , N 2 ', NH, oxygen atoms and CN radicals coming from the gaseous atmosphere and also nitrogen from the pre-nitrided substrate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85603762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955103
S. Johnson, J. Owen
Titanium nitride thin films were deposited by atmospheric chemical vapour deposition in the temperature range 560°C to 660°C from titanium tetrachloride and ammonia in argon carrier gas and studied in terms of nucleation and growth, crystalline orientation and impurities. The films were deposited in a cold wall, atmospheric pressure CVD reactor designed to encourage laminar flow conditions and accommodate a number of different substrates under similar temperature and mass transport conditions. Characterisation of the films using scanning electron and atomic force microscopy showed an increase in nucleation density and decrease in surface roughness with temperature. Glancing-angle X-ray diffraction determined the crystallinity and orientation of the films with respect to the substrate and deposition temperature. Films deposited on Si 3 N 4 showed preferred orientation whereas those on glass showed random orientation. Energy dispersive spectroscopy calibrated by Rutherford backscattering spectroscopy indicated that the amount of chlorine and oxygen contamination decreased with increasing temperature. RBS also determined the stoichiometry of the titanium nitride films. Resistivity and optical studies were also carried out on titanium nitride thin films on glass to evaluate their suitability as heat mirrors.
{"title":"Substrate Effects on the APCVD Growth of Titanium Nitride Films","authors":"S. Johnson, J. Owen","doi":"10.1051/JPHYSCOL:19955103","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955103","url":null,"abstract":"Titanium nitride thin films were deposited by atmospheric chemical vapour deposition in the temperature range 560°C to 660°C from titanium tetrachloride and ammonia in argon carrier gas and studied in terms of nucleation and growth, crystalline orientation and impurities. The films were deposited in a cold wall, atmospheric pressure CVD reactor designed to encourage laminar flow conditions and accommodate a number of different substrates under similar temperature and mass transport conditions. Characterisation of the films using scanning electron and atomic force microscopy showed an increase in nucleation density and decrease in surface roughness with temperature. Glancing-angle X-ray diffraction determined the crystallinity and orientation of the films with respect to the substrate and deposition temperature. Films deposited on Si 3 N 4 showed preferred orientation whereas those on glass showed random orientation. Energy dispersive spectroscopy calibrated by Rutherford backscattering spectroscopy indicated that the amount of chlorine and oxygen contamination decreased with increasing temperature. RBS also determined the stoichiometry of the titanium nitride films. Resistivity and optical studies were also carried out on titanium nitride thin films on glass to evaluate their suitability as heat mirrors.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91089744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995503
L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhauser
Selective epitaxial growth of Si 1-x Ge x was studied with the aim to fabricate quantum wires and dots. The selective deposition was performed by low pressure chemical vapor deposition with dichlorosilane and germane as precursors, at 0.1 Torr and 700°C in a radiation heated, cold wall, high vacuum, quartz reactor. Dislocation free strained dots and wires could be grown much thicker than the critical thickness for unpatterned area, because the critical thickness by formation of misfit dislocations increases when the window dimension is reduced. For x up to 20% it was found that for 10x10 μm 2 dots the critical thickness increases by more than 4 times. The tendency of facet formation was exploited to realize laterally confined multiple quantum well dots and wires with sizes down to 50 nm. Besides the emission from the (100) quantum well layers excitonic emissions from quantum well layers from flat {110} facets and from islands in the (100) and {311} facets were detected. All dots and wires luminesce stronly down to the lowest achieved dimension of 50 nm, the integral intensity exceeding that from the substrate.
以制备量子线和量子点为目的，研究了Si -x - Ge -x的选择性外延生长。在辐射加热、冷壁、高真空石英反应器中，以二氯硅烷和日耳曼为前驱体，在700°C、0.1 Torr温度下，采用低压化学气相沉积法进行选择性沉积。由于错配位错形成的临界厚度随着窗口尺寸的减小而增大，无位错的应变点和应变线可以生长得比无图案区域的临界厚度大得多。当x达到20%时，发现对于10x10 μm 2的点，临界厚度增加了4倍以上。利用晶面形成的趋势，实现了横向受限的多量子阱点和尺寸小至50 nm的量子阱线。除了从(100)量子阱层发射外，还检测到从平面{110}面的量子阱层和从(100)和{311}面的岛状量子阱层的激子发射。所有点和线的发光强度都达到了50nm的最低尺寸，整体强度超过了衬底的发光强度。
{"title":"Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy","authors":"L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhauser","doi":"10.1051/JPHYSCOL:1995503","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995503","url":null,"abstract":"Selective epitaxial growth of Si 1-x Ge x was studied with the aim to fabricate quantum wires and dots. The selective deposition was performed by low pressure chemical vapor deposition with dichlorosilane and germane as precursors, at 0.1 Torr and 700°C in a radiation heated, cold wall, high vacuum, quartz reactor. Dislocation free strained dots and wires could be grown much thicker than the critical thickness for unpatterned area, because the critical thickness by formation of misfit dislocations increases when the window dimension is reduced. For x up to 20% it was found that for 10x10 μm 2 dots the critical thickness increases by more than 4 times. The tendency of facet formation was exploited to realize laterally confined multiple quantum well dots and wires with sizes down to 50 nm. Besides the emission from the (100) quantum well layers excitonic emissions from quantum well layers from flat {110} facets and from islands in the (100) and {311} facets were detected. All dots and wires luminesce stronly down to the lowest achieved dimension of 50 nm, the integral intensity exceeding that from the substrate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74216914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995560
J. Mermet, M. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud
Thin copper films were grown using hexafluoroacetylacetonato-copper(I) trimethylvinylsilane [Cu(hfac)tmvs].This precursor was delivered through a bubbler using hydrogen as carrier gas. Water vapour was used as reactant. The films were deposited on sputtered titanium nitride substrate, at wafer temperatures between 100°C and 210°C. An excess of water leads to the formation of copper oxide and films with a high resistivity. But no water leads to a poor nucleation and very low deposition rate. The way of injecting water plays an important role in the process: water at the beginning of the deposition time helps the nucleation and has to be stopped after a few minutes to avoid the oxidation of the film. An optimization of the operating conditions was carried out through the use of screening and modeling experimental designs. The influence of substrate temperature, carrier gas flow, water flow, water injection time and bubbler pressure was studied and leads to experimental laws, which are showing the dependence of the resistivity and the deposition rate with any of these parameters. An optimum working point was found, in term of resistivity. In that case, X-Ray Photoelectron Spectroscopy (XPS) indicate a pure copper phase. The resistivity was 1.9 μω.cm after annealling. The adhesion on TiN substrate is excellent according to the scotch tape test. Very high conformal deposition is obtained on 0,4 μm width, 1 μm deep.
{"title":"CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design","authors":"J. Mermet, M. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud","doi":"10.1051/JPHYSCOL:1995560","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995560","url":null,"abstract":"Thin copper films were grown using hexafluoroacetylacetonato-copper(I) trimethylvinylsilane [Cu(hfac)tmvs].This precursor was delivered through a bubbler using hydrogen as carrier gas. Water vapour was used as reactant. The films were deposited on sputtered titanium nitride substrate, at wafer temperatures between 100°C and 210°C. An excess of water leads to the formation of copper oxide and films with a high resistivity. But no water leads to a poor nucleation and very low deposition rate. The way of injecting water plays an important role in the process: water at the beginning of the deposition time helps the nucleation and has to be stopped after a few minutes to avoid the oxidation of the film. An optimization of the operating conditions was carried out through the use of screening and modeling experimental designs. The influence of substrate temperature, carrier gas flow, water flow, water injection time and bubbler pressure was studied and leads to experimental laws, which are showing the dependence of the resistivity and the deposition rate with any of these parameters. An optimum working point was found, in term of resistivity. In that case, X-Ray Photoelectron Spectroscopy (XPS) indicate a pure copper phase. The resistivity was 1.9 μω.cm after annealling. The adhesion on TiN substrate is excellent according to the scotch tape test. Very high conformal deposition is obtained on 0,4 μm width, 1 μm deep.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"246 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75098820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995568
S. Alexandrov
Some aspects of RF remote plasma enhanced CVD including the main features of the technique, possibilities of overcoming disadvantages typical for conventional plasma processes, and possible directions to improve the remote plasma method are discussed.
{"title":"Remote PECVD : a Route to Controllable Plasma Deposition","authors":"S. Alexandrov","doi":"10.1051/JPHYSCOL:1995568","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995568","url":null,"abstract":"Some aspects of RF remote plasma enhanced CVD including the main features of the technique, possibilities of overcoming disadvantages typical for conventional plasma processes, and possible directions to improve the remote plasma method are discussed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74689525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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