Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995516
F. Weiss, A. Pisch, C. Bernard, U. Schmatz
Future high power applications of high Tc superconducting materials (like YBa 2 Cu 3 O 6+x ) demand thick films with excellent electrical properties. The use of thin film deposition techniques is only possible when high deposition rates can be reached. A novel aerosol MOCVD technique using a liquid source has recently been developed and is very promising for this purpose. The precursor materials used are the β-diketonates of yttrium, barium and copper, dissolved in diethylene glycol dimethyl ether (diglyme) in various concentrations. A preliminary thermodynamic simulation of the process is a useful tool for a deeper understanding of the stability limits of the superconducting phase and the on-going reactions during deposition. The results of these simulations have been used to optimise the process conditions for YBa 2 Cu 3 O 6+x growth with good superconducting properties. A comparison between the simulation and the experimental results will be given and the influence of the main process parameters (deposition temperature, oxygen partial pressure, precursor concentration,...) will be shown.
未来高Tc超导材料(如YBa 2 Cu 3 O 6+x)的高功率应用需要具有优异电性能的厚膜。只有当能达到高沉积速率时，才有可能使用薄膜沉积技术。一种新型的使用液体源的气溶胶MOCVD技术最近被开发出来，在这方面很有前途。使用的前驱体材料是钇、钡和铜的β-二酮酸盐，溶解在不同浓度的二甘醇二甲醚(二甘醇)中。该过程的初步热力学模拟对于更深入地理解超导相的稳定性极限和沉积过程中正在进行的反应是一个有用的工具。这些模拟结果已用于优化具有良好超导性能的YBa 2 Cu 3 o6 +x生长的工艺条件。将模拟结果与实验结果进行比较，并说明主要工艺参数(沉积温度、氧分压、前驱体浓度等)的影响。
{"title":"Thermodynamic Simulation of YBa2Cu3O6+x Film Growth Using Aerosol MOCVD","authors":"F. Weiss, A. Pisch, C. Bernard, U. Schmatz","doi":"10.1051/JPHYSCOL:1995516","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995516","url":null,"abstract":"Future high power applications of high Tc superconducting materials (like YBa 2 Cu 3 O 6+x ) demand thick films with excellent electrical properties. The use of thin film deposition techniques is only possible when high deposition rates can be reached. A novel aerosol MOCVD technique using a liquid source has recently been developed and is very promising for this purpose. The precursor materials used are the β-diketonates of yttrium, barium and copper, dissolved in diethylene glycol dimethyl ether (diglyme) in various concentrations. A preliminary thermodynamic simulation of the process is a useful tool for a deeper understanding of the stability limits of the superconducting phase and the on-going reactions during deposition. The results of these simulations have been used to optimise the process conditions for YBa 2 Cu 3 O 6+x growth with good superconducting properties. A comparison between the simulation and the experimental results will be given and the influence of the main process parameters (deposition temperature, oxygen partial pressure, precursor concentration,...) will be shown.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77110940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995541
A. Figueras
HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors A. Figueras
{"title":"Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors","authors":"A. Figueras","doi":"10.1051/JPHYSCOL:1995541","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995541","url":null,"abstract":"HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. Anisotropic Marterials Prepared by CVD : Organic Molecular Conductors and High Tc Superconductors A. Figueras","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"33 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81080226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955137
M. Berti, A. Drigo, M. Mazzer, A. Camporese, G. Torzo, G. Rossetto
An experimental study has been performed using RBS and AFM characterization on InP islands grown by MOVPE on GaAs substrate, aiming to understand the influence of the growth parameters on the size distribution of the nanostructures. In the temperature range 580+650°C the total amount of deposited InP is independent of temperature which, on the contrary, affects the morphology of the growing islands.This work is part of a broader investigation on the feasibility of self organized growth to obtain nanosized semiconductor islands (Quantum Dots) by exploiting the mismatch-induced strain between substrate and epilayer in MOVPE deposition. In particular our data on the islands size are in very good agreement with preliminary indications of analytical and numerical models on the minimization of the total energy of the island-substrate system.
{"title":"Production and Characterization of Quantum Nanostructures of Epitaxial Semiconductors","authors":"M. Berti, A. Drigo, M. Mazzer, A. Camporese, G. Torzo, G. Rossetto","doi":"10.1051/JPHYSCOL:19955137","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955137","url":null,"abstract":"An experimental study has been performed using RBS and AFM characterization on InP islands grown by MOVPE on GaAs substrate, aiming to understand the influence of the growth parameters on the size distribution of the nanostructures. In the temperature range 580+650°C the total amount of deposited InP is independent of temperature which, on the contrary, affects the morphology of the growing islands.This work is part of a broader investigation on the feasibility of self organized growth to obtain nanosized semiconductor islands (Quantum Dots) by exploiting the mismatch-induced strain between substrate and epilayer in MOVPE deposition. In particular our data on the islands size are in very good agreement with preliminary indications of analytical and numerical models on the minimization of the total energy of the island-substrate system.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"117 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79943069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995563
A. Grafov, I. Grafova, E. Mazurenko, L. I. Koval, S. Catinella, P. Traldi, G. Battiston, P. Zanella
Among a variety of applications of organometallic compounds, their use as MOCVD precursors is one of the most extensive areas. To our minds, one of the most powerful and accurate methods for evaluation and prediction of thermal behaviour of the precursor is mass-spectrometry coupled with mass-analyzed ion kinetic energy spectrometry. Traditionally, both structure and composition of deposited materials and the precursor's thermal decomposition channels were controlled by gas-phase composition, the process temperature and pressure, i.e. by extemal factors. A possibility of such a control via inner factors - i.e. structure of a specially designed precursors is demonstrated for a series of new mixed-ligand organometallic compounds of In, Zr and Hf.
{"title":"Structure and Destruction of a Precursor : Mass-Spectrometric Evaluation of Creation of Functional Films with Predeterminated Composition","authors":"A. Grafov, I. Grafova, E. Mazurenko, L. I. Koval, S. Catinella, P. Traldi, G. Battiston, P. Zanella","doi":"10.1051/JPHYSCOL:1995563","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995563","url":null,"abstract":"Among a variety of applications of organometallic compounds, their use as MOCVD precursors is one of the most extensive areas. To our minds, one of the most powerful and accurate methods for evaluation and prediction of thermal behaviour of the precursor is mass-spectrometry coupled with mass-analyzed ion kinetic energy spectrometry. Traditionally, both structure and composition of deposited materials and the precursor's thermal decomposition channels were controlled by gas-phase composition, the process temperature and pressure, i.e. by extemal factors. A possibility of such a control via inner factors - i.e. structure of a specially designed precursors is demonstrated for a series of new mixed-ligand organometallic compounds of In, Zr and Hf.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"181 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73936767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995524
P. P. Semyannikov, V. Grankin, I. Igumenov, G. I. Zharkova
By the electron impact mass-spectrometric method, the temperature dependence of the gas phase structure was investigated at the thermal decomposition of dimethylgold chelate vapour of the general formula (CH 3 ) 2 AuL, where L = (RC(X)CHC(Y)R'); R = CH 3 , C(CH 3 ) 3 ; R' = CH 3 , C(CH 3 ) 3 , CF 3 ; X = O, NH; Y = O, S) in vacuum and deuterium environment at temperatures up to 350 °C and the saturated vapour pressure by 10 -4 -10 -2 Torr. The threshold temperature of the stability of comlexes vapour was determined. From the temperature dependence of the rate constant of decomposition processes the effective activation energy was obtained. It was shown that the initial act of the complexes destruction is break of the chelate cycle. The following decomposition process comlexes adsorbed at the surface lead to HL, L and CH 3 L, methane and ethane by competitive inside-and intermolecular processes. The presence of deuterium (or hydrogen) in the reaction zone courses to decrease onset temperatures for all investigated compounds.
{"title":"Mechanism of Interaction of Dimethylgold(III) Chelates Vapour with Hot Surface","authors":"P. P. Semyannikov, V. Grankin, I. Igumenov, G. I. Zharkova","doi":"10.1051/JPHYSCOL:1995524","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995524","url":null,"abstract":"By the electron impact mass-spectrometric method, the temperature dependence of the gas phase structure was investigated at the thermal decomposition of dimethylgold chelate vapour of the general formula (CH 3 ) 2 AuL, where L = (RC(X)CHC(Y)R'); R = CH 3 , C(CH 3 ) 3 ; R' = CH 3 , C(CH 3 ) 3 , CF 3 ; X = O, NH; Y = O, S) in vacuum and deuterium environment at temperatures up to 350 °C and the saturated vapour pressure by 10 -4 -10 -2 Torr. The threshold temperature of the stability of comlexes vapour was determined. From the temperature dependence of the rate constant of decomposition processes the effective activation energy was obtained. It was shown that the initial act of the complexes destruction is break of the chelate cycle. The following decomposition process comlexes adsorbed at the surface lead to HL, L and CH 3 L, methane and ethane by competitive inside-and intermolecular processes. The presence of deuterium (or hydrogen) in the reaction zone courses to decrease onset temperatures for all investigated compounds.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"53 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84822371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995540
J. Sobiecki, T. Wierzchoń
By using a gaseous mixture composed of tetraisopropoxytitanium, nitrogen and hydrogen in PACVD process, we obtain Ti(OCN) layers of a good performance properties, such as a high hardness and good resistance to corrosion and to frictional wear. The optimum temperature of the process is 500°C. At higher temperatures, the surface microhardness decreases. When the process is carried out at 700°C, a surface layer which contain titanium cannot be obtained, only a diffusive oxycarbonitrided layer forms. Spectral investigations by optical emission spectroscopy have shown that the active particles that take part in the formation of the Ti(OCN) type layer are titanium ion Ti - , nitrogen particles: N - , N 2 ', NH, oxygen atoms and CN radicals coming from the gaseous atmosphere and also nitrogen from the pre-nitrided substrate.
{"title":"Formation of Ti(OCN) Layers Under Glow Discharge Conditions","authors":"J. Sobiecki, T. Wierzchoń","doi":"10.1051/JPHYSCOL:1995540","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995540","url":null,"abstract":"By using a gaseous mixture composed of tetraisopropoxytitanium, nitrogen and hydrogen in PACVD process, we obtain Ti(OCN) layers of a good performance properties, such as a high hardness and good resistance to corrosion and to frictional wear. The optimum temperature of the process is 500°C. At higher temperatures, the surface microhardness decreases. When the process is carried out at 700°C, a surface layer which contain titanium cannot be obtained, only a diffusive oxycarbonitrided layer forms. Spectral investigations by optical emission spectroscopy have shown that the active particles that take part in the formation of the Ti(OCN) type layer are titanium ion Ti - , nitrogen particles: N - , N 2 ', NH, oxygen atoms and CN radicals coming from the gaseous atmosphere and also nitrogen from the pre-nitrided substrate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85603762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955103
S. Johnson, J. Owen
Titanium nitride thin films were deposited by atmospheric chemical vapour deposition in the temperature range 560°C to 660°C from titanium tetrachloride and ammonia in argon carrier gas and studied in terms of nucleation and growth, crystalline orientation and impurities. The films were deposited in a cold wall, atmospheric pressure CVD reactor designed to encourage laminar flow conditions and accommodate a number of different substrates under similar temperature and mass transport conditions. Characterisation of the films using scanning electron and atomic force microscopy showed an increase in nucleation density and decrease in surface roughness with temperature. Glancing-angle X-ray diffraction determined the crystallinity and orientation of the films with respect to the substrate and deposition temperature. Films deposited on Si 3 N 4 showed preferred orientation whereas those on glass showed random orientation. Energy dispersive spectroscopy calibrated by Rutherford backscattering spectroscopy indicated that the amount of chlorine and oxygen contamination decreased with increasing temperature. RBS also determined the stoichiometry of the titanium nitride films. Resistivity and optical studies were also carried out on titanium nitride thin films on glass to evaluate their suitability as heat mirrors.
{"title":"Substrate Effects on the APCVD Growth of Titanium Nitride Films","authors":"S. Johnson, J. Owen","doi":"10.1051/JPHYSCOL:19955103","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955103","url":null,"abstract":"Titanium nitride thin films were deposited by atmospheric chemical vapour deposition in the temperature range 560°C to 660°C from titanium tetrachloride and ammonia in argon carrier gas and studied in terms of nucleation and growth, crystalline orientation and impurities. The films were deposited in a cold wall, atmospheric pressure CVD reactor designed to encourage laminar flow conditions and accommodate a number of different substrates under similar temperature and mass transport conditions. Characterisation of the films using scanning electron and atomic force microscopy showed an increase in nucleation density and decrease in surface roughness with temperature. Glancing-angle X-ray diffraction determined the crystallinity and orientation of the films with respect to the substrate and deposition temperature. Films deposited on Si 3 N 4 showed preferred orientation whereas those on glass showed random orientation. Energy dispersive spectroscopy calibrated by Rutherford backscattering spectroscopy indicated that the amount of chlorine and oxygen contamination decreased with increasing temperature. RBS also determined the stoichiometry of the titanium nitride films. Resistivity and optical studies were also carried out on titanium nitride thin films on glass to evaluate their suitability as heat mirrors.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91089744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995578
G. Suchaneck, T. Blum, S. Röhlecke, A. Kottwitz
By altering the plasma generation frequency, applying a magnetic field, changing the plasma regime from the low voltage α-regime where the dominant electron-energy gain mechanism is related to the sheath expansion, to the high voltage γ-regime where the discharge is maintained by secondary electrons emitted by the electrodes under ion bombardment, or generating a highly excited low-pressure plasma in a helicon-type source the influence of the particle and energy flux to the substrate on the a-Si:H film electronic properties was investigated. Deposition rate simulation was performed regarding a radical source located at the sheath/plasma boundary. Radical losses due to diffusion and reactive collisions with gas molecules were taken into account.
{"title":"Principles for Controlling the Electronic Quality of High-Rate Deposited a-Si:H Films","authors":"G. Suchaneck, T. Blum, S. Röhlecke, A. Kottwitz","doi":"10.1051/JPHYSCOL:1995578","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995578","url":null,"abstract":"By altering the plasma generation frequency, applying a magnetic field, changing the plasma regime from the low voltage α-regime where the dominant electron-energy gain mechanism is related to the sheath expansion, to the high voltage γ-regime where the discharge is maintained by secondary electrons emitted by the electrodes under ion bombardment, or generating a highly excited low-pressure plasma in a helicon-type source the influence of the particle and energy flux to the substrate on the a-Si:H film electronic properties was investigated. Deposition rate simulation was performed regarding a radical source located at the sheath/plasma boundary. Radical losses due to diffusion and reactive collisions with gas molecules were taken into account.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"05 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81849093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995570
C. Tixier, P. Tristant, J. Desmaison, D. Merle
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methane is injected in the afterglow. The substrates are radio-frequency (RF) biased in order to improve the film properties. Three configurations have been compared: microwave, RF, and mixed microwave-RF coupling. Optical emission spectroscopy allowed to compare intensities of a few spectral lines in the afterglow (CH, C 2 , H, and Ar lines) as a function of process conditions. Films have been characterised by infra-red (IR) spectroscopy and electron recoil detection analysis (ERDA). Stress in the films is in the range of -0.7 to -0.3 GPa (compressive). The influence of the hydrogen presence in the plasma, microwave power and radio-frequency bias voltage is discussed.
{"title":"Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates","authors":"C. Tixier, P. Tristant, J. Desmaison, D. Merle","doi":"10.1051/JPHYSCOL:1995570","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995570","url":null,"abstract":"Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methane is injected in the afterglow. The substrates are radio-frequency (RF) biased in order to improve the film properties. Three configurations have been compared: microwave, RF, and mixed microwave-RF coupling. Optical emission spectroscopy allowed to compare intensities of a few spectral lines in the afterglow (CH, C 2 , H, and Ar lines) as a function of process conditions. Films have been characterised by infra-red (IR) spectroscopy and electron recoil detection analysis (ERDA). Stress in the films is in the range of -0.7 to -0.3 GPa (compressive). The influence of the hydrogen presence in the plasma, microwave power and radio-frequency bias voltage is discussed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84974098","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995535
C. Bisch, Y. Wang, F. Teyssandier
The formation of thin films in the conventional thermally activated chemical vapour deposition process is based on heterogeneous reactions involved in surface nucleation and growth. Nevertheless, the influence of homogeneous reactions has often been underestimated, and the intermediate species that are formed from homogeneous reactions may have a great influence on the deposition mechanism. In order to study the formation of these species, a specific reactor has been designed, in which the effects of gas-phase and surface reactions can be separated and so clearly identified. In order to limit the influence of surface phenomena, a so called wall-less reactor has been developed. In such a reactor, the reactive gas mixture is heated by mixing with a hot inert gas. Two basic configurations have preliminary been optimized by simulation modelling using the Si-H chemical system. A reactor has been designed according to these calculations. Comparison of the calculated flow pattern with that visualized by the laser sheet method shows an excellent agreement, that partially validates our model. The reactor is coupled with Raman spectroscopy, that allows both the determination of the local temperature of the gas phase and the detection of gaseous species.
{"title":"Wall-Less Like Reactor : Simulation and Experimental Results","authors":"C. Bisch, Y. Wang, F. Teyssandier","doi":"10.1051/JPHYSCOL:1995535","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995535","url":null,"abstract":"The formation of thin films in the conventional thermally activated chemical vapour deposition process is based on heterogeneous reactions involved in surface nucleation and growth. Nevertheless, the influence of homogeneous reactions has often been underestimated, and the intermediate species that are formed from homogeneous reactions may have a great influence on the deposition mechanism. In order to study the formation of these species, a specific reactor has been designed, in which the effects of gas-phase and surface reactions can be separated and so clearly identified. In order to limit the influence of surface phenomena, a so called wall-less reactor has been developed. In such a reactor, the reactive gas mixture is heated by mixing with a hot inert gas. Two basic configurations have preliminary been optimized by simulation modelling using the Si-H chemical system. A reactor has been designed according to these calculations. Comparison of the calculated flow pattern with that visualized by the laser sheet method shows an excellent agreement, that partially validates our model. The reactor is coupled with Raman spectroscopy, that allows both the determination of the local temperature of the gas phase and the detection of gaseous species.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90898548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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