Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955135
A. Dutron, E. Blanquet, V. Ghetta, R. Madar, C. Bernard
Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their amorphous or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chloride, ammonia, hydrogen and argon. Preliminary thermodynamic simulations of the Me-Si-N and the CVD Me-Si-N-Cl-H-Ar systems (Me=Re, W, Ta), were combined to the experimental study. The Re-Si-N and W-Si-N layers crystallization temperature was found to be around 1173 K after annealing in vacuum by Rapid Thermal Annealing. Their morphology, thermal stability and resistivity were evaluated as a function of annealing temperature.
研究了Me- si - n (Me= Re, W, Ta)薄膜的低压化学气相沉积(LPCVD)作为Cu覆盖层与氧化硅衬底之间的扩散屏障。它们的非晶或纳米晶结构有望提供比通常的多晶势垒更好的性能。对于CVD工艺，气态前驱体是硅烷、原位制备的金属氯化物、氨、氢和氩。对Me- si - n体系和CVD Me- si - n - cl - h - ar体系(Me=Re, W, Ta)进行了初步的热力学模拟。真空快速退火后，Re-Si-N和W-Si-N层的结晶温度在1173 K左右。研究了它们的形貌、热稳定性和电阻率随退火温度的变化。
{"title":"Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics","authors":"A. Dutron, E. Blanquet, V. Ghetta, R. Madar, C. Bernard","doi":"10.1051/JPHYSCOL:19955135","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955135","url":null,"abstract":"Low pressure chemical vapor deposition (LPCVD) of Me-Si-N (Me= Re, W, Ta) thin films were investigated for use as diffusion barrier between Cu overlayer and oxidized silicon substrates. Their amorphous or nanocrystalline structure is expected to provide better performance than usual polycrystalline barriers. For the CVD process, gaseous precursors were silane, in situ fabricated metal chloride, ammonia, hydrogen and argon. Preliminary thermodynamic simulations of the Me-Si-N and the CVD Me-Si-N-Cl-H-Ar systems (Me=Re, W, Ta), were combined to the experimental study. The Re-Si-N and W-Si-N layers crystallization temperature was found to be around 1173 K after annealing in vacuum by Rapid Thermal Annealing. Their morphology, thermal stability and resistivity were evaluated as a function of annealing temperature.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"196 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82708073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995526
A. G. Varliamov, S. V. Afanas′eva
In the present work some conformities of atmospheric CVD-process with silicon carbonitride layers synthesis as an example are discussed. It is proposed the chemisorption - kinetic mechanism of the coatings heterogeneous synthesis. The possibility of this mechanism existence is conditioned by the limited adsorptive capacity of the growing surface and by defining the surface processes as the leading (limiting) stage of the CVD-synthesis. The effect of the chemisorptive surface memory is discovered. The idea of it is as follows: after a sharp changing of CVD-synthesis temperature the surface keeps the information about the blocked centers number at its previous state.
{"title":"Deposition Kinetics of CVD-Silicon Carbonitride Coatings","authors":"A. G. Varliamov, S. V. Afanas′eva","doi":"10.1051/JPHYSCOL:1995526","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995526","url":null,"abstract":"In the present work some conformities of atmospheric CVD-process with silicon carbonitride layers synthesis as an example are discussed. It is proposed the chemisorption - kinetic mechanism of the coatings heterogeneous synthesis. The possibility of this mechanism existence is conditioned by the limited adsorptive capacity of the growing surface and by defining the surface processes as the leading (limiting) stage of the CVD-synthesis. The effect of the chemisorptive surface memory is discovered. The idea of it is as follows: after a sharp changing of CVD-synthesis temperature the surface keeps the information about the blocked centers number at its previous state.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89267028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995548
M. Doudkowsky, J. Santiso, A. Figueras, R. Berjoan
In this paper we report the preparation of quasi-stoichiometric layers (Ba -deficient and Ba-rich) by MOCVD. The compositional effects on the morphology, structure and superconducting properties were studied too.
{"title":"Compositional Effects on Morphology, Structure and Superconducting Properties of YxBay CuzO7-δ Thin Films Prepared by Metalorganic Chemical Vapour Deposition","authors":"M. Doudkowsky, J. Santiso, A. Figueras, R. Berjoan","doi":"10.1051/JPHYSCOL:1995548","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995548","url":null,"abstract":"In this paper we report the preparation of quasi-stoichiometric layers (Ba -deficient and Ba-rich) by MOCVD. The compositional effects on the morphology, structure and superconducting properties were studied too.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"45 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90264246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995585
V. Ovsyannikov, G. V. Lashkaryov, E. Mazurenko
Thin transparent amorphous films of aluminum oxide have been obtained using PE MOCVD technique and aluminum β-diketonate as precursor in controlled mixture of gas reagents Ar and O 2 . The films were deposited on glass, quartz and stainless steel substrates at temperature range of 100-250°C. The correlation between electric properties and such deposition parameters as r.f. power Wp, the total gas pressure in chamber P o , O 2 partial pressure, the substrate temperature T, and gas carrier flow rate were determined. Optimal deposition conditions of Al 2 O 3 layers with high dielectric characteristics were established. Auger analysis showed that the composition of films obtained was stoichiometric. Auger depth profiles showed the existence of the transition area enriched with oxygen in the film/substrate heterostructure.
{"title":"PE MOCVD of thin high transparent dielectric amorphous films of aluminium oxide","authors":"V. Ovsyannikov, G. V. Lashkaryov, E. Mazurenko","doi":"10.1051/JPHYSCOL:1995585","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995585","url":null,"abstract":"Thin transparent amorphous films of aluminum oxide have been obtained using PE MOCVD technique and aluminum β-diketonate as precursor in controlled mixture of gas reagents Ar and O 2 . The films were deposited on glass, quartz and stainless steel substrates at temperature range of 100-250°C. The correlation between electric properties and such deposition parameters as r.f. power Wp, the total gas pressure in chamber P o , O 2 partial pressure, the substrate temperature T, and gas carrier flow rate were determined. Optimal deposition conditions of Al 2 O 3 layers with high dielectric characteristics were established. Auger analysis showed that the composition of films obtained was stoichiometric. Auger depth profiles showed the existence of the transition area enriched with oxygen in the film/substrate heterostructure.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"81 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90553284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995550
N. Fedotova, I. Igumenov, V. Mamatyuk, G. V. Sidorenko
A physico-chemical research of bis-(dipivaloylmethanato)barium(II) (Ba(thd)2) has been carried out from the point of its use in CVD processes as a precursor (thermal stability, immunity to external effects and etc.). The optimal conditions for synthesis, purification and storage have been found. It has been shown, that the sublimated product presents a mixture of several modifications with the main phase of a composition Ba 4 (thd) 8 . At a lowered pressure the sublimated product is preserved without decomposition for a long time. In the air it is a monomer of a composition Ba(thd) 2 *2H 2 O, decomposing in the course of time with forming a free ligand or a diketone (C 8 H 21 O 2 ) depending on the way of purification of the initial compound.
{"title":"Physico-Chemical Study of Barium (II) Dipivaloylmethanate Nature","authors":"N. Fedotova, I. Igumenov, V. Mamatyuk, G. V. Sidorenko","doi":"10.1051/JPHYSCOL:1995550","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995550","url":null,"abstract":"A physico-chemical research of bis-(dipivaloylmethanato)barium(II) (Ba(thd)2) has been carried out from the point of its use in CVD processes as a precursor (thermal stability, immunity to external effects and etc.). The optimal conditions for synthesis, purification and storage have been found. It has been shown, that the sublimated product presents a mixture of several modifications with the main phase of a composition Ba 4 (thd) 8 . At a lowered pressure the sublimated product is preserved without decomposition for a long time. In the air it is a monomer of a composition Ba(thd) 2 *2H 2 O, decomposing in the course of time with forming a free ligand or a diketone (C 8 H 21 O 2 ) depending on the way of purification of the initial compound.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81957716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955138
J. Murota, Y. Takasawa, H. Fujimoto, K. Goto, T. Matsuura, Y. Sawada
Low-temperature epitaxial growth of undoped and doped Si 1-x Ge x films on the Si(100) surface at 550°C was investigated under the cleanest possible reaction environment of SiH 4 , GeH 4 and H 2 with the PH 3 or B 2 H 6 addition using an ultraclean hot-wall low-pressure chemical vapour deposition (LPCVD) system. The SiH 4 and GeH 4 reaction rates are expressed by the Langmuir-type rate equation, assuming that one SiH 4 or GeH 4 molecule is adsorbed at a single adsorption site, according to the Langmuir's adsorption isotherm, and decomposes there. It is found that the SiH 4 and GeH 4 adsorption rate constants become larger at the bond site of the Si-Ge pair than those at the others, while the SiH 4 surface reaction rate constant becomes the largest at the bond site of the Ge-Ge pair. With the PH 3 and B 2 H 5 addition, the incorporation rate of P and B increased proportionally and was higher with a higher Ge fraction x in the film. This was explained by the increase of the free site density and the difference of free site materials according to the Langmuir-type rate equation. In the case of P doping, it is found that electrically inactive P is formed with high Ge fractions.
采用超净热壁低压化学气相沉积(LPCVD)系统，在最干净的sih4, geh4和h2与ph3或b2h6的反应环境下，在550°C的Si(100)表面研究了未掺杂和掺杂Si 1-x Ge x薄膜的低温外延生长。根据Langmuir吸附等温线，假设一个sih4或geh4分子被吸附在一个单一的吸附位点上，并在那里分解，sih4和geh4的反应速率用Langmuir型速率方程表示。结果表明，sih4和geh4在Si-Ge对的键位上的吸附速率常数比其他基团的吸附速率常数大，而sih4在Ge-Ge对的键位上的表面反应速率常数最大。随着PH 3和b2h5的加入，P和B的掺入率成比例增加，且随着膜中Ge分数x的增加，P和B的掺入率也相应增加。根据Langmuir-type速率方程，这可以通过自由位点密度的增加和自由位点材料的差异来解释。在P掺杂的情况下，发现电非活性P与高Ge组分形成。
{"title":"Low-Temperature Epitaxial Growth Mechanism of Si1-xGex Films in the Silane and Germane Reactions","authors":"J. Murota, Y. Takasawa, H. Fujimoto, K. Goto, T. Matsuura, Y. Sawada","doi":"10.1051/JPHYSCOL:19955138","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955138","url":null,"abstract":"Low-temperature epitaxial growth of undoped and doped Si 1-x Ge x films on the Si(100) surface at 550°C was investigated under the cleanest possible reaction environment of SiH 4 , GeH 4 and H 2 with the PH 3 or B 2 H 6 addition using an ultraclean hot-wall low-pressure chemical vapour deposition (LPCVD) system. The SiH 4 and GeH 4 reaction rates are expressed by the Langmuir-type rate equation, assuming that one SiH 4 or GeH 4 molecule is adsorbed at a single adsorption site, according to the Langmuir's adsorption isotherm, and decomposes there. It is found that the SiH 4 and GeH 4 adsorption rate constants become larger at the bond site of the Si-Ge pair than those at the others, while the SiH 4 surface reaction rate constant becomes the largest at the bond site of the Ge-Ge pair. With the PH 3 and B 2 H 5 addition, the incorporation rate of P and B increased proportionally and was higher with a higher Ge fraction x in the film. This was explained by the increase of the free site density and the difference of free site materials according to the Langmuir-type rate equation. In the case of P doping, it is found that electrically inactive P is formed with high Ge fractions.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78370853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955126
M. Yano, K. Ohno, H. Imanaka
NiO deposited on the wall of the pore of the filter by the reaction with NiCl 2 (g) and O 2 (g). NiCl 2 (g) and O 2 (g) are separely fed at the opposite side of the filter(namely inner and outer side). Used alumina filter is mean pore diameter 1 μn, o.d. 10 mm, thickness 1 mm. This NiO deposited filter was activated by hydrogen to form Ni/Al2O 3 catalyst, then the catalyst was measured methanol decomposition activity. From the results, increment of catalytic component increases the specific catalytic activity, but hty have an optimal value of Ni deposition. As the shape of the catalyst is favorable to reduce the pressure drop of reactant through the catalyst, this catalyst may be available to treat massive reduce the pressure drop of reactant through the catalyst, this catalyst may be available to treat massive flow. It was found that it is a great catalyst of promise to onboard cracking for methanol automobile.
{"title":"Preparation of Onboard Reforming Catalyst for Methanol by Chemical Vapor Deposition","authors":"M. Yano, K. Ohno, H. Imanaka","doi":"10.1051/JPHYSCOL:19955126","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955126","url":null,"abstract":"NiO deposited on the wall of the pore of the filter by the reaction with NiCl 2 (g) and O 2 (g). NiCl 2 (g) and O 2 (g) are separely fed at the opposite side of the filter(namely inner and outer side). Used alumina filter is mean pore diameter 1 μn, o.d. 10 mm, thickness 1 mm. This NiO deposited filter was activated by hydrogen to form Ni/Al2O 3 catalyst, then the catalyst was measured methanol decomposition activity. From the results, increment of catalytic component increases the specific catalytic activity, but hty have an optimal value of Ni deposition. As the shape of the catalyst is favorable to reduce the pressure drop of reactant through the catalyst, this catalyst may be available to treat massive reduce the pressure drop of reactant through the catalyst, this catalyst may be available to treat massive flow. It was found that it is a great catalyst of promise to onboard cracking for methanol automobile.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78540497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955132
B. Tillack, J. Schlote, G. Ritter, D. Krüger, G. Morgenstern, P. Gaworzewski
Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD). Two different approaches for the delta doping were used. In the first case the dopants were incorporated into the growing film. The process was kinetically controlled. By this way B-delta-layers with a steepness of 1.7 nm/decade were measured by Secondary ion mass spectrometry (SIMS) for the profiles prepared. In the second case the doping was performed during an interruption of layer growth. The process was controlled by the surface adsorption equilibrium of dopants. Using this regime B-delta-layers of 1 monolayer and with a steepness of 1.4 nm/decade were obtained in SiGe. The values of the estimated steepness represent an extremely sharp profile for a CVD process. Structural properties of the delta-doped layers were investigated using cross sectional transmission electron microscopy (XTEM). The steepness estimated by SIMS was compared with high depth resolution spreading resistance (SR) measurements which detect the electrical active boron only.
{"title":"Delta Doping in Si and SiGe by LP(RT)CVD","authors":"B. Tillack, J. Schlote, G. Ritter, D. Krüger, G. Morgenstern, P. Gaworzewski","doi":"10.1051/JPHYSCOL:19955132","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955132","url":null,"abstract":"Sharp profiles of boron were prepared by Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD). Two different approaches for the delta doping were used. In the first case the dopants were incorporated into the growing film. The process was kinetically controlled. By this way B-delta-layers with a steepness of 1.7 nm/decade were measured by Secondary ion mass spectrometry (SIMS) for the profiles prepared. In the second case the doping was performed during an interruption of layer growth. The process was controlled by the surface adsorption equilibrium of dopants. Using this regime B-delta-layers of 1 monolayer and with a steepness of 1.4 nm/decade were obtained in SiGe. The values of the estimated steepness represent an extremely sharp profile for a CVD process. Structural properties of the delta-doped layers were investigated using cross sectional transmission electron microscopy (XTEM). The steepness estimated by SIMS was compared with high depth resolution spreading resistance (SR) measurements which detect the electrical active boron only.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78902979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955136
P. Pastorino, G. Morello, S. Tamagno
In this work we focus on the properties of amorphous hydrogenated silicon nitride (a-SiN:H) films deposited by mercury sensitization Photo-Chemical Vapour Deposition (Photo-CVD) utilizing SiH 4 and NH 3 and their suitability for the realization of III-V semiconductor optoelectronic devices (dielectric insulation, protection of reverse junctions, process mask, selective regrowth, antireflection coating). Using proper deposition conditions we have obtained a-SiN:H films with breakdown field of 8.9 MV/cm, good spatial uniformity of the dielectric properties, refractive index of 1.85 at 1535 nm, quasi-stoichiometric composition (Si/N=0.8), energy gap of 4.22 eV and density of 2.51 g/cm 3 , absence of pores and bubbles. We can reproduce film thickness, refractive index and energy gap within ±3%, ±0.005 and 0.05 eV respectively. SiN/InP structures similar to the actual optoelectronic devices have been employed in order to test mechanical adhesion and thichness of the a-SiN:H film grown on vertical facets. A-SiN:H films deposited in the optimized conditions have been successfully used in the previously mentioned applications.
{"title":"Amorphous Hydrogenated Silicon Nitride Deposited by Mercury Photosensitization Chemical Vapour Deposition for Optoelectronic Applications","authors":"P. Pastorino, G. Morello, S. Tamagno","doi":"10.1051/JPHYSCOL:19955136","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955136","url":null,"abstract":"In this work we focus on the properties of amorphous hydrogenated silicon nitride (a-SiN:H) films deposited by mercury sensitization Photo-Chemical Vapour Deposition (Photo-CVD) utilizing SiH 4 and NH 3 and their suitability for the realization of III-V semiconductor optoelectronic devices (dielectric insulation, protection of reverse junctions, process mask, selective regrowth, antireflection coating). Using proper deposition conditions we have obtained a-SiN:H films with breakdown field of 8.9 MV/cm, good spatial uniformity of the dielectric properties, refractive index of 1.85 at 1535 nm, quasi-stoichiometric composition (Si/N=0.8), energy gap of 4.22 eV and density of 2.51 g/cm 3 , absence of pores and bubbles. We can reproduce film thickness, refractive index and energy gap within ±3%, ±0.005 and 0.05 eV respectively. SiN/InP structures similar to the actual optoelectronic devices have been employed in order to test mechanical adhesion and thichness of the a-SiN:H film grown on vertical facets. A-SiN:H films deposited in the optimized conditions have been successfully used in the previously mentioned applications.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"84 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77383862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995560
J. Mermet, M. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud
Thin copper films were grown using hexafluoroacetylacetonato-copper(I) trimethylvinylsilane [Cu(hfac)tmvs].This precursor was delivered through a bubbler using hydrogen as carrier gas. Water vapour was used as reactant. The films were deposited on sputtered titanium nitride substrate, at wafer temperatures between 100°C and 210°C. An excess of water leads to the formation of copper oxide and films with a high resistivity. But no water leads to a poor nucleation and very low deposition rate. The way of injecting water plays an important role in the process: water at the beginning of the deposition time helps the nucleation and has to be stopped after a few minutes to avoid the oxidation of the film. An optimization of the operating conditions was carried out through the use of screening and modeling experimental designs. The influence of substrate temperature, carrier gas flow, water flow, water injection time and bubbler pressure was studied and leads to experimental laws, which are showing the dependence of the resistivity and the deposition rate with any of these parameters. An optimum working point was found, in term of resistivity. In that case, X-Ray Photoelectron Spectroscopy (XPS) indicate a pure copper phase. The resistivity was 1.9 μω.cm after annealling. The adhesion on TiN substrate is excellent according to the scotch tape test. Very high conformal deposition is obtained on 0,4 μm width, 1 μm deep.
{"title":"CVD Copper Deposition from CuI(HFAC)TMVS Studied Through a Modeling Experimental Design","authors":"J. Mermet, M. Mouche, F. Pires, E. Richard, J. Torres, J. Palleau, F. Braud","doi":"10.1051/JPHYSCOL:1995560","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995560","url":null,"abstract":"Thin copper films were grown using hexafluoroacetylacetonato-copper(I) trimethylvinylsilane [Cu(hfac)tmvs].This precursor was delivered through a bubbler using hydrogen as carrier gas. Water vapour was used as reactant. The films were deposited on sputtered titanium nitride substrate, at wafer temperatures between 100°C and 210°C. An excess of water leads to the formation of copper oxide and films with a high resistivity. But no water leads to a poor nucleation and very low deposition rate. The way of injecting water plays an important role in the process: water at the beginning of the deposition time helps the nucleation and has to be stopped after a few minutes to avoid the oxidation of the film. An optimization of the operating conditions was carried out through the use of screening and modeling experimental designs. The influence of substrate temperature, carrier gas flow, water flow, water injection time and bubbler pressure was studied and leads to experimental laws, which are showing the dependence of the resistivity and the deposition rate with any of these parameters. An optimum working point was found, in term of resistivity. In that case, X-Ray Photoelectron Spectroscopy (XPS) indicate a pure copper phase. The resistivity was 1.9 μω.cm after annealling. The adhesion on TiN substrate is excellent according to the scotch tape test. Very high conformal deposition is obtained on 0,4 μm width, 1 μm deep.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"246 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75098820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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