Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995503
L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhauser
Selective epitaxial growth of Si 1-x Ge x was studied with the aim to fabricate quantum wires and dots. The selective deposition was performed by low pressure chemical vapor deposition with dichlorosilane and germane as precursors, at 0.1 Torr and 700°C in a radiation heated, cold wall, high vacuum, quartz reactor. Dislocation free strained dots and wires could be grown much thicker than the critical thickness for unpatterned area, because the critical thickness by formation of misfit dislocations increases when the window dimension is reduced. For x up to 20% it was found that for 10x10 μm 2 dots the critical thickness increases by more than 4 times. The tendency of facet formation was exploited to realize laterally confined multiple quantum well dots and wires with sizes down to 50 nm. Besides the emission from the (100) quantum well layers excitonic emissions from quantum well layers from flat {110} facets and from islands in the (100) and {311} facets were detected. All dots and wires luminesce stronly down to the lowest achieved dimension of 50 nm, the integral intensity exceeding that from the substrate.
以制备量子线和量子点为目的，研究了Si -x - Ge -x的选择性外延生长。在辐射加热、冷壁、高真空石英反应器中，以二氯硅烷和日耳曼为前驱体，在700°C、0.1 Torr温度下，采用低压化学气相沉积法进行选择性沉积。由于错配位错形成的临界厚度随着窗口尺寸的减小而增大，无位错的应变点和应变线可以生长得比无图案区域的临界厚度大得多。当x达到20%时，发现对于10x10 μm 2的点，临界厚度增加了4倍以上。利用晶面形成的趋势，实现了横向受限的多量子阱点和尺寸小至50 nm的量子阱线。除了从(100)量子阱层发射外，还检测到从平面{110}面的量子阱层和从(100)和{311}面的岛状量子阱层的激子发射。所有点和线的发光强度都达到了50nm的最低尺寸，整体强度超过了衬底的发光强度。
{"title":"Strained Si1-xGex/Si Dots and Wires Grown by Selective Epitaxy","authors":"L. Vescan, R. Loo, A. Souifi, C. Dieker, S. Wickenhauser","doi":"10.1051/JPHYSCOL:1995503","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995503","url":null,"abstract":"Selective epitaxial growth of Si 1-x Ge x was studied with the aim to fabricate quantum wires and dots. The selective deposition was performed by low pressure chemical vapor deposition with dichlorosilane and germane as precursors, at 0.1 Torr and 700°C in a radiation heated, cold wall, high vacuum, quartz reactor. Dislocation free strained dots and wires could be grown much thicker than the critical thickness for unpatterned area, because the critical thickness by formation of misfit dislocations increases when the window dimension is reduced. For x up to 20% it was found that for 10x10 μm 2 dots the critical thickness increases by more than 4 times. The tendency of facet formation was exploited to realize laterally confined multiple quantum well dots and wires with sizes down to 50 nm. Besides the emission from the (100) quantum well layers excitonic emissions from quantum well layers from flat {110} facets and from islands in the (100) and {311} facets were detected. All dots and wires luminesce stronly down to the lowest achieved dimension of 50 nm, the integral intensity exceeding that from the substrate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74216914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995568
S. Alexandrov
Some aspects of RF remote plasma enhanced CVD including the main features of the technique, possibilities of overcoming disadvantages typical for conventional plasma processes, and possible directions to improve the remote plasma method are discussed.
{"title":"Remote PECVD : a Route to Controllable Plasma Deposition","authors":"S. Alexandrov","doi":"10.1051/JPHYSCOL:1995568","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995568","url":null,"abstract":"Some aspects of RF remote plasma enhanced CVD including the main features of the technique, possibilities of overcoming disadvantages typical for conventional plasma processes, and possible directions to improve the remote plasma method are discussed.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74689525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995599
A. G. Dias, J. Breda, P. Moretto, J. Ordelman
The engineering of conventional TiN coatings to attain hardness of the order of ultrahard coatings (e.g. c-BN) by a controlled incorporation of silicon atoms in the titanium nitride lattice leading to the formation of a TiN-Si 3 N 4 composite material is discussed. An a-priori thermodynamic approach complemented by thermochemical equilibrium calculations was used to evaluate convenient precursors and processing parameters for the production of this novel coating material. The multiphase nature of preliminary test samples deposited by PACVD is confirmed by X-ray diffraction, IR spectroscopy and EPMA analysis. The films are made up of TiN nanocrystallites embedded in an amorphous Si 3 N 4 tissue with small amounts of free Si, as predicted by previous Ti-Si-N phase diagram calculations.
{"title":"Development of TiN-Si3N4 Nano Composite Coatings for Wear Resistance Applications","authors":"A. G. Dias, J. Breda, P. Moretto, J. Ordelman","doi":"10.1051/JPHYSCOL:1995599","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995599","url":null,"abstract":"The engineering of conventional TiN coatings to attain hardness of the order of ultrahard coatings (e.g. c-BN) by a controlled incorporation of silicon atoms in the titanium nitride lattice leading to the formation of a TiN-Si 3 N 4 composite material is discussed. An a-priori thermodynamic approach complemented by thermochemical equilibrium calculations was used to evaluate convenient precursors and processing parameters for the production of this novel coating material. The multiphase nature of preliminary test samples deposited by PACVD is confirmed by X-ray diffraction, IR spectroscopy and EPMA analysis. The films are made up of TiN nanocrystallites embedded in an amorphous Si 3 N 4 tissue with small amounts of free Si, as predicted by previous Ti-Si-N phase diagram calculations.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78848040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955125
S. Motojima, I. Hasegawa, H. Iwanaga
Micro-coiled fibers of carbon, SiC, Si 3 N 4 , TiC, ZrC and HfC were prepared by a metal-impurity activated chemical vapor deposition or vapour phase metallizing of the coiled carbon fibers. The growth conditions, morphology, growth mechanism and some properties were examined. The double-coiled carbon fibers were prepared using acetylene as a carbon source and various powders or plates of transition metals, metal carbides, MoS 2 , Ti 2 O 3 , and Ni single crystal plate as a catalyst at 650-850°C. The triple-coiled SiC fibers were prepared using coked rice husks and/or SiO as a Si-source and Ni, Cr or Fe as a catalyst at 1400-1500°C. The double-coiled TiC fibers were prepared by the PC1 3 activated CVD process on a graphite substrate using a Pt+Si or Pd+Si mixed catalyst at 1050-1250°C.
{"title":"Vapour Growth of Micro-Coiled Ceramic Fibers and their Properties","authors":"S. Motojima, I. Hasegawa, H. Iwanaga","doi":"10.1051/JPHYSCOL:19955125","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955125","url":null,"abstract":"Micro-coiled fibers of carbon, SiC, Si 3 N 4 , TiC, ZrC and HfC were prepared by a metal-impurity activated chemical vapor deposition or vapour phase metallizing of the coiled carbon fibers. The growth conditions, morphology, growth mechanism and some properties were examined. The double-coiled carbon fibers were prepared using acetylene as a carbon source and various powders or plates of transition metals, metal carbides, MoS 2 , Ti 2 O 3 , and Ni single crystal plate as a catalyst at 650-850°C. The triple-coiled SiC fibers were prepared using coked rice husks and/or SiO as a Si-source and Ni, Cr or Fe as a catalyst at 1400-1500°C. The double-coiled TiC fibers were prepared by the PC1 3 activated CVD process on a graphite substrate using a Pt+Si or Pd+Si mixed catalyst at 1050-1250°C.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78911439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995501
V. Hlavácek, J. Thiart, D. Orlicki
The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.
{"title":"Morphology and Film Growth in CVD Reactions","authors":"V. Hlavácek, J. Thiart, D. Orlicki","doi":"10.1051/JPHYSCOL:1995501","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995501","url":null,"abstract":"The paper reports on three major aspects of CVD reactor simulation: 1) Modeling of transport phenomena in conventional CVD and their effect on the film growth; 2) Modeling of plasma enhanced CVD and deposition of thin films; 3) Modeling of film growth and analysis of stability and morphology case studies. Case studies involve deposition of boron on W wire, deposition of Si-H and morphology development for a typical CVD reaction. Numerical methods of simulation are discussed in detail for each category mentioned above.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"195 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76862796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955100
A. Sassella, A. Borghesi, S. Rojas, L. Zanotti
Optical characterization of dielectric films used in integrated circuit device manufacturing can give information on their optical behavior as well as on their structural properties and composition. The results obtained on several undoped and doped silicon oxides, silicon oxynitrides, and silicon nitrides usually employed for microelectronic applications both in the ultraviolet-visible and infrared spectral ranges are illustrated.
{"title":"Optical Properties of CVD-Deposited Dielectric Films for Microelectronic Devices","authors":"A. Sassella, A. Borghesi, S. Rojas, L. Zanotti","doi":"10.1051/JPHYSCOL:19955100","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955100","url":null,"abstract":"Optical characterization of dielectric films used in integrated circuit device manufacturing can give information on their optical behavior as well as on their structural properties and composition. The results obtained on several undoped and doped silicon oxides, silicon oxynitrides, and silicon nitrides usually employed for microelectronic applications both in the ultraviolet-visible and infrared spectral ranges are illustrated.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90947621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995573
G. Beshkov, D. Dimitrov, S. Georgiev, T. Dimitrova
In this work the properties of PECVD-carbon films before and after Rapid Thermal Annealing (RTA) are presented. The thickness of the investigated films is in the range 50 - 6000A. The layers are annealed at 1400°C for different times of 1s to 3 min in vacuum 5 x 10 -5 Torr. Raman investigation has been performed before and after annealing.
{"title":"Deposition and Properties of Thin PECVD Carbon Films After Rapid Thermal Annealing","authors":"G. Beshkov, D. Dimitrov, S. Georgiev, T. Dimitrova","doi":"10.1051/JPHYSCOL:1995573","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995573","url":null,"abstract":"In this work the properties of PECVD-carbon films before and after Rapid Thermal Annealing (RTA) are presented. The thickness of the investigated films is in the range 50 - 6000A. The layers are annealed at 1400°C for different times of 1s to 3 min in vacuum 5 x 10 -5 Torr. Raman investigation has been performed before and after annealing.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84227051","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995505
M. Hierlemann, H. Simka, K. Jensen, M. Utz
Very limited experimental data are available on thermal decomposition of germane in the gas phase. Recent developments in theoretical quantum chemistry techniques such as ab initio Hartree-Fock and density functional methods have made accurate determination of molecular properties possible. Systematic development of a detailed gas-phase decomposition mechanism for germane using ab initio molecular orbital calculations is described in this work. A decomposition pathway for germane and higher germanes is proposed and the relevant reaction rates are calculated using transition state theory combined with unimolecular and chemical activation treatments. The decomposition model is implemented into a realistic thermal-fluid simulation.
{"title":"Kinetic Modeling of the Gas Phase Decomposition of Germane by Computational Chemistry Techniques","authors":"M. Hierlemann, H. Simka, K. Jensen, M. Utz","doi":"10.1051/JPHYSCOL:1995505","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995505","url":null,"abstract":"Very limited experimental data are available on thermal decomposition of germane in the gas phase. Recent developments in theoretical quantum chemistry techniques such as ab initio Hartree-Fock and density functional methods have made accurate determination of molecular properties possible. Systematic development of a detailed gas-phase decomposition mechanism for germane using ab initio molecular orbital calculations is described in this work. A decomposition pathway for germane and higher germanes is proposed and the relevant reaction rates are calculated using transition state theory combined with unimolecular and chemical activation treatments. The decomposition model is implemented into a realistic thermal-fluid simulation.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"81 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82084574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995502
S. Berg, Claes Nender
Modeling of reactive sputter deposition processes is a very important tool for fast and inventive process development. A short review with some new results is given for a set of previously presented reactive sputtering models that has been successfull in describing and predicting the processes. Examples are given for each case of reactive sputtering with one target and one reactive gas, reactive compound- and co-sputtering as well as reactive sputtering using two reactive gases. The importance of process control in order to control the inherent instabilities and composition, is emphasized.
{"title":"Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process","authors":"S. Berg, Claes Nender","doi":"10.1051/JPHYSCOL:1995502","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995502","url":null,"abstract":"Modeling of reactive sputter deposition processes is a very important tool for fast and inventive process development. A short review with some new results is given for a set of previously presented reactive sputtering models that has been successfull in describing and predicting the processes. Examples are given for each case of reactive sputtering with one target and one reactive gas, reactive compound- and co-sputtering as well as reactive sputtering using two reactive gases. The importance of process control in order to control the inherent instabilities and composition, is emphasized.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"177 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79865369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995562
K. Fröhlich, J. Šouc, D. Machajdík, A. Kobzev, F. Weiss, J. Sénateur, K. Dahmen
We have examined the properties of thin epitaxial CeO 2 films prepared by aerosol MOCVD. The films were deposited on (1102) sapphire at deposition temperatures between 500 °C and 900°C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness ∼ 0.2 μm and the full width at half maximum of the rocking curve 0.3° - 0.4°. The minimal yield measured by backscattering spectrometry in the channeling mode was 5.5%, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO 2 films was revealed by the measurement of the φ-scan. The aerosol MOCVD CeO 2 films were found to be suitable as a buffer layer for a preparation of superconducting high-T c films. YBa 2 Cu 3 O 1 superconducting films deposited on the CeO 2 /(1102) sapphire exhibit superconducting transition temperature T 0(R=0) = 86 K
研究了气溶胶MOCVD法制备的ceo2外延薄膜的性能。在500 ~ 900℃的沉积温度下，薄膜被沉积在(1102)蓝宝石上。在高沉积温度下生长的薄膜具有最佳的性能。膜的厚度为~ 0.2 μm，全宽为0.3°~ 0.4°。在通道模式下，后向散射光谱测量的最小产率为5.5%，证实了沉积膜的高择优取向。通过φ-扫描测量，揭示了ceo2薄膜的外延特性。发现气溶胶MOCVD ceo2薄膜适合作为制备超导高温度c薄膜的缓冲层。在ceo2 /(1102)蓝宝石上沉积的YBa 2 Cu 3 O 1超导薄膜表现出超导转变温度t0 (R=0) = 86 K
{"title":"Properties of Thin Epitaxial Aerosol MOCVD CeO2 Films Grown on (1102) Sapphire","authors":"K. Fröhlich, J. Šouc, D. Machajdík, A. Kobzev, F. Weiss, J. Sénateur, K. Dahmen","doi":"10.1051/JPHYSCOL:1995562","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995562","url":null,"abstract":"We have examined the properties of thin epitaxial CeO 2 films prepared by aerosol MOCVD. The films were deposited on (1102) sapphire at deposition temperatures between 500 °C and 900°C. The best properties were observed for the film grown at high deposition temperatures. The films have thickness ∼ 0.2 μm and the full width at half maximum of the rocking curve 0.3° - 0.4°. The minimal yield measured by backscattering spectrometry in the channeling mode was 5.5%, confirming high preferred orientation of the deposited films. The epitaxial character of the CeO 2 films was revealed by the measurement of the φ-scan. The aerosol MOCVD CeO 2 films were found to be suitable as a buffer layer for a preparation of superconducting high-T c films. YBa 2 Cu 3 O 1 superconducting films deposited on the CeO 2 /(1102) sapphire exhibit superconducting transition temperature T 0(R=0) = 86 K","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76584274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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