Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995584
T. Wierzchoń, J. Sobiecki
A prospective line in the development of thermo-chemical treatments under glow discharge conditions is to work out new techniques of producing multicomponent layers, e.g., composite layers, by combining various treatments, such as e.g. plasma nitriding and the PACVD method. The combined properties, appropriately selected and complementary to one another, of the single-component layers obtained using one of these processes, permit widening the application range of the layers. The paper specifies the conditions under which the multicomponent layers of Ti(OCN) type and composite layers of the nitrided + TiN or nitrided + Ti(OCN) type can be produced on steel. The structure and properties of the layers thus obtained are also described.
{"title":"Properties of Surface Layers Produced from a Metalorganic Titanium Compound Under Glow Discharge Conditions","authors":"T. Wierzchoń, J. Sobiecki","doi":"10.1051/JPHYSCOL:1995584","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995584","url":null,"abstract":"A prospective line in the development of thermo-chemical treatments under glow discharge conditions is to work out new techniques of producing multicomponent layers, e.g., composite layers, by combining various treatments, such as e.g. plasma nitriding and the PACVD method. The combined properties, appropriately selected and complementary to one another, of the single-component layers obtained using one of these processes, permit widening the application range of the layers. The paper specifies the conditions under which the multicomponent layers of Ti(OCN) type and composite layers of the nitrided + TiN or nitrided + Ti(OCN) type can be produced on steel. The structure and properties of the layers thus obtained are also described.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"17 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81313508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995587
C. Spee, J. Driessen, A. Kuypers
A review is presented describing the development of TiN-CVD from the classical, high temperature TiCl 4 /N 2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production facilities for good quality TiN layers for wear resistant applications have come on the market. Production facilities for IC-technology applications of CVD-TiN are on the edge of breaking through. For both applications deposition temperatures have been reduced to 500-600°C. Research developments, have shown even lower deposition temperatures possible for TiN and Ti(C,N) layers.
{"title":"Low Temperature Deposition of TiN Ceramic Material by Metal Organic and/or Plasma Enhanced CVD","authors":"C. Spee, J. Driessen, A. Kuypers","doi":"10.1051/JPHYSCOL:1995587","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995587","url":null,"abstract":"A review is presented describing the development of TiN-CVD from the classical, high temperature TiCl 4 /N 2 process, towards low temperature MOCVD processes. This development is presented from a chemical point of view. In addition to low pressure (LPCVD) and atmospheric pressure (APCVD) thermal processing, also plasma enhanced (PECVD) techniques are described. In the past few years production facilities for good quality TiN layers for wear resistant applications have come on the market. Production facilities for IC-technology applications of CVD-TiN are on the edge of breaking through. For both applications deposition temperatures have been reduced to 500-600°C. Research developments, have shown even lower deposition temperatures possible for TiN and Ti(C,N) layers.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81484832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995557
A. Grafov, E. Mazurenko, G. Battiston, P. Zanella
Design and creation of new materials with unusual, predictable or predeterminated properties become one of the most actual problems of modern applied chemistry. Main demands are discussed, which are made to chemical compounds used in CVD synthesis of functional materials. A division of volatile metal-containing precursors into main classes is given. On the basis of volatility and thermal stabiliti criteria elaborated at IGIC-NASU, we have designed, synthesized and characterized a series of new advanced precursors for Zr(IV) and Hf(IV). Their properties are compared to those of known species. A possibility of formation of requested properties and structure of final materials is shown.
{"title":"Design of Zr(IV) and Hf(IV) Co-Ordination Compounds - Precursors for MOCVD Synthesis of Protective Coatings","authors":"A. Grafov, E. Mazurenko, G. Battiston, P. Zanella","doi":"10.1051/JPHYSCOL:1995557","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995557","url":null,"abstract":"Design and creation of new materials with unusual, predictable or predeterminated properties become one of the most actual problems of modern applied chemistry. Main demands are discussed, which are made to chemical compounds used in CVD synthesis of functional materials. A division of volatile metal-containing precursors into main classes is given. On the basis of volatility and thermal stabiliti criteria elaborated at IGIC-NASU, we have designed, synthesized and characterized a series of new advanced precursors for Zr(IV) and Hf(IV). Their properties are compared to those of known species. A possibility of formation of requested properties and structure of final materials is shown.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80462832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995556
I. Igumenov
The state of the art in research and application of processes of chemical vapour deposition of noble metal (Pt, Pd, Rh, Ir , Ru, Au) coatings is considered. Systematization of known experimental data on synthesis, thermal properties and saturated vapour pressure of volatile compounds of noble metals with organic ligands is provided. The processes of CVD of noble metals were analized from general requirements to precursors. It is shown that chelate or mixed-ligand noble metal complexes and, in particular β-diketonate derivatives due to their thermal properties are the most suitable for deposition of noble metal thick films.
{"title":"MO CVD of Noble Metals","authors":"I. Igumenov","doi":"10.1051/JPHYSCOL:1995556","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995556","url":null,"abstract":"The state of the art in research and application of processes of chemical vapour deposition of noble metal (Pt, Pd, Rh, Ir , Ru, Au) coatings is considered. Systematization of known experimental data on synthesis, thermal properties and saturated vapour pressure of volatile compounds of noble metals with organic ligands is provided. The processes of CVD of noble metals were analized from general requirements to precursors. It is shown that chelate or mixed-ligand noble metal complexes and, in particular β-diketonate derivatives due to their thermal properties are the most suitable for deposition of noble metal thick films.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"130 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90284323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955105
D. Briand, M. Sarret, P. Duverneuil, T. Mohammed‐Brahim, K. Kis-Sion
We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B 2 H 6 /SiH 4 mole ratio is put forward, and this effect appears to be very strong especially at high pressure. It is explained by a lowering of the diborane concentration in the gas mixture along the load, because of a different threshold for the thermal decomposition of diborane and silane. It is also put forward that a critical concentration of boron exists above which the growth rate is increasing. Improvements of the horizontal homogeneity are obtained by varying the total gas flow rate.
{"title":"Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers","authors":"D. Briand, M. Sarret, P. Duverneuil, T. Mohammed‐Brahim, K. Kis-Sion","doi":"10.1051/JPHYSCOL:19955105","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955105","url":null,"abstract":"We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B 2 H 6 /SiH 4 mole ratio is put forward, and this effect appears to be very strong especially at high pressure. It is explained by a lowering of the diborane concentration in the gas mixture along the load, because of a different threshold for the thermal decomposition of diborane and silane. It is also put forward that a critical concentration of boron exists above which the growth rate is increasing. Improvements of the horizontal homogeneity are obtained by varying the total gas flow rate.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91094294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995567
J. Blocher
HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. CVD Conference Recollections J. Blocher
{"title":"CVD Conference Recollections","authors":"J. Blocher","doi":"10.1051/JPHYSCOL:1995567","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995567","url":null,"abstract":"HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. CVD Conference Recollections J. Blocher","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"44 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91150277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955133
P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte
The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.
{"title":"Powder Dissipation in PECVD for SiH4-CH4-H2 Gas Mixtures","authors":"P. Rava, G. Crovini, F. Demichelis, F. Giorgis, R. Galloni, R. Rizzoli, C. Summonte","doi":"10.1051/JPHYSCOL:19955133","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955133","url":null,"abstract":"The effective dissipated power in SiH 4 -CH 4 -H 2 plasmas excited by 13.56 MHz has been measured for different gas ratios using a subtractive technique to take into account the effects of power losses in the rf circuit. It is found that the dissipated power in general increases with increasing CH 4 concentration and decreases with increasing H 2 concentration. Optical, electrical and defective properties of films deposited under a wide range of deposition conditions have been measured and correlated with dissipated power.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"44 1","pages":"1125"},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91518849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955117
H. Vergnes, E. Scheid, P. Duverneuil, J. Couderc
This paper present a new kind of equipment called the annular reactor, which has been designed to treat a great number of substrates with a particularly good uniformity of thickness of deposits on the batch. Furthermore, a small scale pilot plant of this apparatus, called the sector reactor, has been built. It constitutes a very convenient laboratory piece of equipment, particularly useful to perform, at low cost, the unavoidable experimental part of the development of any new application. Theoretical and experimental results obtained with these reactors are presented and compared to those obtained when using tubular reactors. First tests in order to produce cheap thick layers are also reported.
{"title":"Deposition of Thick Layers, in a New CVD Reactor","authors":"H. Vergnes, E. Scheid, P. Duverneuil, J. Couderc","doi":"10.1051/JPHYSCOL:19955117","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955117","url":null,"abstract":"This paper present a new kind of equipment called the annular reactor, which has been designed to treat a great number of substrates with a particularly good uniformity of thickness of deposits on the batch. Furthermore, a small scale pilot plant of this apparatus, called the sector reactor, has been built. It constitutes a very convenient laboratory piece of equipment, particularly useful to perform, at low cost, the unavoidable experimental part of the development of any new application. Theoretical and experimental results obtained with these reactors are presented and compared to those obtained when using tubular reactors. First tests in order to produce cheap thick layers are also reported.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91284886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995579
G. Bruno, M. Losurdo, P. Capezzuto
The effectiveness of hydrogen plasma for the reduction process of surface native oxide on InP substrates is investigated by X-ray photoelectron spectroscopy (XPS) and by phase modulated spectroscopic ellipsometry (PMSE). H2 plasmas, generated in a quartz tube by applying a r.f. field (13.56 MHz) to external electrodes, produce a very high H-atom flux (5.10 20 atoms/cm 2 .sec) in the downstream region. The ex-situ XPS and in-situ PMSE measurements indicate that the native oxide layer (25 A) is completely removed. The end point of the cleaning process is well detected by kinetic ellipsometry. The plasma treated surface shows a higher stability to reoxidation than that observed for wet etches samples.
{"title":"On the Use of H2 Plasma for the Cleaning and Passivation of InP Substrates","authors":"G. Bruno, M. Losurdo, P. Capezzuto","doi":"10.1051/JPHYSCOL:1995579","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995579","url":null,"abstract":"The effectiveness of hydrogen plasma for the reduction process of surface native oxide on InP substrates is investigated by X-ray photoelectron spectroscopy (XPS) and by phase modulated spectroscopic ellipsometry (PMSE). H2 plasmas, generated in a quartz tube by applying a r.f. field (13.56 MHz) to external electrodes, produce a very high H-atom flux (5.10 20 atoms/cm 2 .sec) in the downstream region. The ex-situ XPS and in-situ PMSE measurements indicate that the native oxide layer (25 A) is completely removed. The end point of the cleaning process is well detected by kinetic ellipsometry. The plasma treated surface shows a higher stability to reoxidation than that observed for wet etches samples.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78563782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995575
D. Tonneau, R. Pierrisnard, H. Dallaporta, W. Marine
Copper thin films have been deposited by thermal decomposition of copper acetylacetonate-oxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been obtained at temperatures as low as 300°C. Under UV illumination, this temperature threshold decreased down to 225°C. The influence of substrate temperature and layer thickness on film roughness as observed by Atomic Force Microscopy is discussed. The kinetics of Cu(acac) 2 decomposition has been investigated as a function of precursor partial pressure and substrate temperature in the range of 200-350°C, and the maximum deposition rate of 25 A/min has been reached in the mass transport regime at a substrate temperature of 350°C and a precursor partial pressure of 0.04 Torr. The deposition rate could be substancially enhanced by UV photoassistance.
利用乙酰丙酮铜-氧混合物的热分解法制备了铜薄膜。在低至300°C的温度下，通过俄歇电子能谱(AES)可以获得高质量的铜膜。在紫外线照射下，该温度阈值降至225℃。讨论了原子力显微镜观察到的衬底温度和层厚对薄膜粗糙度的影响。在200 ~ 350℃范围内，研究了Cu(acac) 2的分解动力学与前驱体分压和衬底温度的关系，结果表明，在衬底温度为350℃、前驱体分压为0.04 Torr时，Cu(acac) 2的最大沉积速率为25 a /min。沉积速率可以由紫外线photoassistance实质性组织增强。
{"title":"Growth Kinetics of Copper Films from Photoassisted CVD of Copperacetylacetonate","authors":"D. Tonneau, R. Pierrisnard, H. Dallaporta, W. Marine","doi":"10.1051/JPHYSCOL:1995575","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995575","url":null,"abstract":"Copper thin films have been deposited by thermal decomposition of copper acetylacetonate-oxygen mixtures. Copper films of high quality as observed by Auger Electron Spectroscopy (AES) have been obtained at temperatures as low as 300°C. Under UV illumination, this temperature threshold decreased down to 225°C. The influence of substrate temperature and layer thickness on film roughness as observed by Atomic Force Microscopy is discussed. The kinetics of Cu(acac) 2 decomposition has been investigated as a function of precursor partial pressure and substrate temperature in the range of 200-350°C, and the maximum deposition rate of 25 A/min has been reached in the mass transport regime at a substrate temperature of 350°C and a precursor partial pressure of 0.04 Torr. The deposition rate could be substancially enhanced by UV photoassistance.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87084538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：