Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955112
W. Besling, P. Put, J. Schoonman
Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO 2 -laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending on process conditions. Powder particles are deposited on a substrate by means of a thermal gradient. The primary particle size is about 30 nm. The particles are agglomerated. Depositions are characterized with spectroscopic and chemical analysis and correlated to some important laser process parameters. The powder deposit and the thin film consist of Si-N, Si-C and Si-O bonds according to FTIR-spectroscopy and X-ray Photo-Electron Spectroscopy. A residual amount of hydrogen is present. The material is amorphous (XRD) and has a polymer-like structure. The overall composition varies around Si 0.4 C 0.1 N 0.3 O 0.2 . The nitrogen content increases significantly by adding ammonia to the reactant gas flow. The high amount of oxygen is caused by hydrolysis and is a result of being exposed to air.
以六甲基二矽氮烷(HMDS)和氨为反应物，研究了激光诱导化学气相沉积碳氮化硅涂层和粉末。采用平行配置的工业连续co2激光器对反应物气体进行了加热。HMDS在激光束中解离，形成反应性自由基，并通过加成机制迅速增加分子量。根据不同的工艺条件，可以形成致密的类聚合物碳氮化硅薄膜和纳米级粉末。粉末颗粒通过热梯度沉积在衬底上。主要粒径约为30 nm。颗粒聚集在一起。用光谱和化学分析对沉积进行了表征，并与一些重要的激光工艺参数相关联。ftir光谱和x射线光电子能谱分析表明，粉末沉积物和薄膜由Si-N、Si-C和Si-O键组成。有残余的氢存在。该材料是无定形的(XRD)，具有类似聚合物的结构。整体组成在Si 0.4 C 0.1 N 0.3 O 0.2左右变化。在反应物气流中加入氨气，氮含量显著增加。大量的氧气是由水解引起的，是暴露在空气中的结果。
{"title":"Laser-Induced Chemical Vapour Deposition of Silicon Carbonitride","authors":"W. Besling, P. Put, J. Schoonman","doi":"10.1051/JPHYSCOL:19955112","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955112","url":null,"abstract":"Laser-induced Chemical Vapour Deposition of silicon carbonitride coatings and powders has been investigated using hexamethyldisilazane (HMDS) and ammonia as reactants. An industrial CW CO 2 -laser in parallel configuration has been used to heat up the reactant gases. HMDS dissociates in the laser beam and reactive radicals are formed which increase rapidly in molecular weight by an addition mechanism. Dense polymer-like silicon carbonitride thin films and nanosized powders are formed depending on process conditions. Powder particles are deposited on a substrate by means of a thermal gradient. The primary particle size is about 30 nm. The particles are agglomerated. Depositions are characterized with spectroscopic and chemical analysis and correlated to some important laser process parameters. The powder deposit and the thin film consist of Si-N, Si-C and Si-O bonds according to FTIR-spectroscopy and X-ray Photo-Electron Spectroscopy. A residual amount of hydrogen is present. The material is amorphous (XRD) and has a polymer-like structure. The overall composition varies around Si 0.4 C 0.1 N 0.3 O 0.2 . The nitrogen content increases significantly by adding ammonia to the reactant gas flow. The high amount of oxygen is caused by hydrolysis and is a result of being exposed to air.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"12 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89252528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955122
R. Feurer, A. Reynes, P. Serp, P. Kalck, R. Morancho
The OMCVD method has been used to deposit highly pure metal particles on porous divided substrates in order to prepare metal supported catalysts. A fluidized bed reactor has been especially designed and the requirements of CVD and fluidization have been taken into account to select convenient experimental conditions. Three organometallic compounds of rhodium have been selected and their thermal decomposition under He and He/H2 mixtures studied by infrared spectroscopy and on-line mass spectrometry analyses. The deposition are carried out at a total pressure of 100 Torr and substrate temperatures as low as 100°C. The solid deposits have been characterized by XPS, the size and dispersion of the particules have been determined by chemisorption methods or measured by TEM. These catalysts can be used without further treatment and their performances have been compared to those of conventionally prepared ones.
{"title":"OMCVD on Fluidized Divided Substrates : a Potential Method for the Preparation of Catalysts","authors":"R. Feurer, A. Reynes, P. Serp, P. Kalck, R. Morancho","doi":"10.1051/JPHYSCOL:19955122","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955122","url":null,"abstract":"The OMCVD method has been used to deposit highly pure metal particles on porous divided substrates in order to prepare metal supported catalysts. A fluidized bed reactor has been especially designed and the requirements of CVD and fluidization have been taken into account to select convenient experimental conditions. Three organometallic compounds of rhodium have been selected and their thermal decomposition under He and He/H2 mixtures studied by infrared spectroscopy and on-line mass spectrometry analyses. The deposition are carried out at a total pressure of 100 Torr and substrate temperatures as low as 100°C. The solid deposits have been characterized by XPS, the size and dispersion of the particules have been determined by chemisorption methods or measured by TEM. These catalysts can be used without further treatment and their performances have been compared to those of conventionally prepared ones.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"141 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76962881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995523
P. P. Semyannikov, V. Grankin, I. Igumenov, A. Bykov
The processes of thermal decomposition of palladium(II) β-diketonate complexes were investigated by a high-temperature mass spectrometric method with the use of a high-temperature molecular beam source. It was established that decomposition of the palladium complexes in gas phase processes proceeds by a radical mechanism and depends on temperature. For an additional proof of the existence of the radical particles the spin trap method was applied with a mass spectrometric identification of adducts. The following order of thermal stability of the complexes in gas phase was established: Pd(hfac) 2 > Pd(tfac) 2 > Pd(dpm) 2 > Pd(acac) 2 . This order is reverse to the thermal stability in a solid state. The thermal decomposition of Pd(aa) 2 and Pd(hfa) 2 complexes in deuterium showed that the deuterium presence strongly accelerates the decomposition processes.
{"title":"Mechanism of Thermal Decomposition of Palladium β-Diketonates Vapour on Hot surface","authors":"P. P. Semyannikov, V. Grankin, I. Igumenov, A. Bykov","doi":"10.1051/JPHYSCOL:1995523","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995523","url":null,"abstract":"The processes of thermal decomposition of palladium(II) β-diketonate complexes were investigated by a high-temperature mass spectrometric method with the use of a high-temperature molecular beam source. It was established that decomposition of the palladium complexes in gas phase processes proceeds by a radical mechanism and depends on temperature. For an additional proof of the existence of the radical particles the spin trap method was applied with a mass spectrometric identification of adducts. The following order of thermal stability of the complexes in gas phase was established: Pd(hfac) 2 > Pd(tfac) 2 > Pd(dpm) 2 > Pd(acac) 2 . This order is reverse to the thermal stability in a solid state. The thermal decomposition of Pd(aa) 2 and Pd(hfa) 2 complexes in deuterium showed that the deuterium presence strongly accelerates the decomposition processes.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75076955","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995582
E. Reznikova, V. V. Chesnokov, G. I. Zharkova, I. Igumenov
Rhenium, gold and platinum film micropatterns were obtained by the LCVD method on the surface of silicon and glass substrates from vapors of Re 2 (CO) 10 , (CH 3 ) 2 Au(dpm), Pt(hfa) 2 , respectively. The heated reaction chamber at atmospheric pressure with a flow of an inert gas-carrier was used. The high marginal sharpness and the thickness uniformity of deposited films was provided by the use of a powerful nanosecond pulse nitrogen laser (λ=337 nm), a projective system for delineation of the irradiation zone and by laser beam microscanning in the limits of the projective mask window. The metal pattern replicating the configuration of the projective mask window with a uniform 0.1-1 μm thickness was formed during 1-10 s. The writing rate of the straight metal lines was limited by the size of the irradiation zone and by the pulse repetition frequency and made of 150 μm/s. The smooth Re films were obtained with a good adhesion to the substrate and a surface resistivity of about 1 Ω/square. The films of Au and Pt were deposited as layers of microdrops whose coupling with one another and with the contact ground determined the film resistivity. The melting of Au and Pt films occurs during the laser-induced deposition process and influences the film growth dynamics and the film-to-substrate adhesion.
{"title":"Direct Deposition of Metal Film Patterns Using Nitrogen Laser","authors":"E. Reznikova, V. V. Chesnokov, G. I. Zharkova, I. Igumenov","doi":"10.1051/JPHYSCOL:1995582","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995582","url":null,"abstract":"Rhenium, gold and platinum film micropatterns were obtained by the LCVD method on the surface of silicon and glass substrates from vapors of Re 2 (CO) 10 , (CH 3 ) 2 Au(dpm), Pt(hfa) 2 , respectively. The heated reaction chamber at atmospheric pressure with a flow of an inert gas-carrier was used. The high marginal sharpness and the thickness uniformity of deposited films was provided by the use of a powerful nanosecond pulse nitrogen laser (λ=337 nm), a projective system for delineation of the irradiation zone and by laser beam microscanning in the limits of the projective mask window. The metal pattern replicating the configuration of the projective mask window with a uniform 0.1-1 μm thickness was formed during 1-10 s. The writing rate of the straight metal lines was limited by the size of the irradiation zone and by the pulse repetition frequency and made of 150 μm/s. The smooth Re films were obtained with a good adhesion to the substrate and a surface resistivity of about 1 Ω/square. The films of Au and Pt were deposited as layers of microdrops whose coupling with one another and with the contact ground determined the film resistivity. The melting of Au and Pt films occurs during the laser-induced deposition process and influences the film growth dynamics and the film-to-substrate adhesion.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"37 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75364447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:19955129
M. Domenici
The worldwide production of semiconductor grade polysilicon for electronic application has reached nowadays the amount of 10,000 T/y. The material is produced universally by CVD of extremely purified (chloro)silanes reacting with hydrogen. A modern plant will be described operating under conditions which are optimized for energy saving and ecological purposes (closed-loop operation). Other CVD applications in use for electronic materials are described, namely polysilicon deposition on wafer back, for gettering purposes, and epitaxial layer deposition on wafer front. Last one accounts for an annual production of more than 450 MSQI (million square inches).
{"title":"Chemical Vapor Deposition of Hyperpure Polysilicon on Industrial Scale","authors":"M. Domenici","doi":"10.1051/JPHYSCOL:19955129","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:19955129","url":null,"abstract":"The worldwide production of semiconductor grade polysilicon for electronic application has reached nowadays the amount of 10,000 T/y. The material is produced universally by CVD of extremely purified (chloro)silanes reacting with hydrogen. A modern plant will be described operating under conditions which are optimized for energy saving and ecological purposes (closed-loop operation). Other CVD applications in use for electronic materials are described, namely polysilicon deposition on wafer back, for gettering purposes, and epitaxial layer deposition on wafer front. Last one accounts for an annual production of more than 450 MSQI (million square inches).","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"66 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79438210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995545
S. Oda, Shuu'ichirou Yamamoto, A. Kawaguchi
A very smooth surface film of c-axis oriented YBa 2 Cu 3 Ox (YBCO) with roughness of less than monomolecular layer over 10μmx10μm, free of precipitates, has been obtained by atomic layer-by-layer metalorganic chemical vapor deposition (MOCVD) on a SrTiO 3 substrate at 650°C. A very large terrace length of 0.3-0.5μm may be due to the enhanced migration of growing species on the surface. The result of an attempt to prepare YBCO films with a larger terrace width surface using NdGaO 3 substrates is discussed. The correlation between boulder formation and dislocations in the substrate is clarified and methods for eliminating boulders are proposed. Very high superconductivity critical current densities of 3x10 7 A/cm 2 at 4.2K and 3x10 6 A/cm 2 at 77K have been obtained.
{"title":"Atomic layer-by-layer MOCVD of oxide superconductors","authors":"S. Oda, Shuu'ichirou Yamamoto, A. Kawaguchi","doi":"10.1051/JPHYSCOL:1995545","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995545","url":null,"abstract":"A very smooth surface film of c-axis oriented YBa 2 Cu 3 Ox (YBCO) with roughness of less than monomolecular layer over 10μmx10μm, free of precipitates, has been obtained by atomic layer-by-layer metalorganic chemical vapor deposition (MOCVD) on a SrTiO 3 substrate at 650°C. A very large terrace length of 0.3-0.5μm may be due to the enhanced migration of growing species on the surface. The result of an attempt to prepare YBCO films with a larger terrace width surface using NdGaO 3 substrates is discussed. The correlation between boulder formation and dislocations in the substrate is clarified and methods for eliminating boulders are proposed. Very high superconductivity critical current densities of 3x10 7 A/cm 2 at 4.2K and 3x10 6 A/cm 2 at 77K have been obtained.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"4 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80560146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995508
F. Fau-Canillac, F. Carrere, A. Reynes, C. Vahlas, F. Maury
The pyrolysis of CH 4 , of C 3 H 8 and of the mixture 20C 3 H 8 /80CH 4 was investigated in a hot wall CVD reactor by mass spectrometry. Experiments were conducted as a function of temperature and of surface-to-volume (S/V) ratio of the substrate. The main by-products of the pyrolysis were identified and reaction mechanisms were proposed taking into account homogenous decomposition/formation reactions. Cyclic species are possibly involved in the formation mechanism of pyrocarbon.
{"title":"Mass Spectrometric Study of the Gas Phase During Chemical Vapor Deposition of Pyrolytic Carbon","authors":"F. Fau-Canillac, F. Carrere, A. Reynes, C. Vahlas, F. Maury","doi":"10.1051/JPHYSCOL:1995508","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995508","url":null,"abstract":"The pyrolysis of CH 4 , of C 3 H 8 and of the mixture 20C 3 H 8 /80CH 4 was investigated in a hot wall CVD reactor by mass spectrometry. Experiments were conducted as a function of temperature and of surface-to-volume (S/V) ratio of the substrate. The main by-products of the pyrolysis were identified and reaction mechanisms were proposed taking into account homogenous decomposition/formation reactions. Cyclic species are possibly involved in the formation mechanism of pyrocarbon.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80293696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995542
A. Kovalgin, Francoise Chabert-Rocabois, M. Hitchman, S. H. Shamlian, S. Alexandrov
In this paper we report on a study by FTIR spectroscopy of the gas phase thermal decomposition of [Y(TMHD) 3 ], [Cu(TMHD) 2 ] and [Ba(TDFND) 2 .tetraglyme] under a total pressure of 10 Torr, for a temperature range 200 - 650°C, and in the absence and presence of oxygen. The variation of the decomposition characteristics for each of the complexes as a function of temperature, and as shown by changes in the absorption coefficients, are related to the molecular structures.
{"title":"A study by In Situ FTIR Spectroscopy of the Decomposition of Precursors for the MOCVD of High Temperature Superconductors","authors":"A. Kovalgin, Francoise Chabert-Rocabois, M. Hitchman, S. H. Shamlian, S. Alexandrov","doi":"10.1051/JPHYSCOL:1995542","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995542","url":null,"abstract":"In this paper we report on a study by FTIR spectroscopy of the gas phase thermal decomposition of [Y(TMHD) 3 ], [Cu(TMHD) 2 ] and [Ba(TDFND) 2 .tetraglyme] under a total pressure of 10 Torr, for a temperature range 200 - 650°C, and in the absence and presence of oxygen. The variation of the decomposition characteristics for each of the complexes as a function of temperature, and as shown by changes in the absorption coefficients, are related to the molecular structures.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"15 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88042264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995561
A. Bastianini, G. Battiston, R. Gerbasi, M. Porchia, S. Daolio
By using tetrakis(diethylamido) zirconium [Zr(NEt 2 ) 4 ], excellent quality ZrO 2 thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580°C and in the presence of oxygen. The as-grown films are colourless, smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO 2 with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs. From X-ray diffraction analysis. the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia. Under 550°C the as-grown films resulted highly textured and were dominated by the (020) orientation. The films were annealed in the range 600-1000°C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied.
{"title":"Chemical Vapor Deposition of ZrO2 Thin Films Using Zr(NEt2)4 as Precursor","authors":"A. Bastianini, G. Battiston, R. Gerbasi, M. Porchia, S. Daolio","doi":"10.1051/JPHYSCOL:1995561","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995561","url":null,"abstract":"By using tetrakis(diethylamido) zirconium [Zr(NEt 2 ) 4 ], excellent quality ZrO 2 thin films were deposited with high growth rates on alumina and glass substrates by chemical vapor deposition. The depositions were carried out in a hot wall reactor at reduced pressure (200 Pa) in the temperature range 500-580°C and in the presence of oxygen. The as-grown films are colourless, smooth and well-adherent to the substrates. SIMS analysis evidenced pure ZrO 2 with a slight superficial contamination of hydrocarbons and nitrogen. The films have a tapered polycrystalline columnar structure well visible in SEM micrographs. From X-ray diffraction analysis. the monoclinic phase resulted as the major phase together with a small variable amount of tetragonal zirconia. Under 550°C the as-grown films resulted highly textured and were dominated by the (020) orientation. The films were annealed in the range 600-1000°C and the effect of annealing on the texture and on the phase and dimensions of the crystallites have been studied.","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"58 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88975931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-06-01DOI: 10.1051/JPHYSCOL:1995593
F. Henry, B. Armas, C. Combescure, D. Thenegal, R. Flamand
{"title":"Chemical Vapour Deposition of AIN-Si3N4 Codeposits","authors":"F. Henry, B. Armas, C. Combescure, D. Thenegal, R. Flamand","doi":"10.1051/JPHYSCOL:1995593","DOIUrl":"https://doi.org/10.1051/JPHYSCOL:1995593","url":null,"abstract":"","PeriodicalId":17944,"journal":{"name":"Le Journal De Physique Colloques","volume":"27 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1995-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79911604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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